ED Syllabus 23-24

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B19ECT202 - ELECTRON DEVICES

Course Objectives:

1. To understand the construction, theory and operation of semiconductor PN junction diode.


2. To impart the construction, theory and operation of Bipolar Junction Transistors and Field effect
Transistors.
3. To acquaint the construction, theory and operation of special semiconductor Devices and power
devices.
4. To analyze the characteristics of PN, BJT, ZENER.
5. To analyze the characteristics of FET, SCR, Clipper, Clamper and FWR
UNIT- I SEMICONDUCTOR DIODE 9
PN junction diode, , forward and reverse bias characteristics , Breakdown in PN Junction Diodes ,PN
diode Current equations, Energy Band diagram, Transition and Diffusion Capacitances, Switching
Characteristics.

UNIT- II BIPOLAR JUNCTION TRANSISTORS 9


NPN and PNP Operations, , Input and Output characteristics of CE, CB, CC configurations, Early
effect and early voltage of BJT, BJT device model-small signal model-Large signal model, Multi
Emitter Transistor.

UNIT- III FIELD EFFECT TRANSISTORS 9


Drain and Transfer characteristics, Current equations, Pinch off voltage and significance of JFET,
Drain and Transfer Characteristics, Threshold voltage, Channel length modulation of MOSFET,
Comparison of MOSFET with JFET.

UNIT- IV SPECIAL SEMICONDUCTOR DEVICES 9


MESFET, FINFET, PINFET, CNTFET, Schottky barrier diode, Zener diode, Varactor diode, Tunnel
diode, LASER diode and LDR.

UNIT- V POWER DEVICES AND DISPLAY DEVICES 9


Unijunction Transistor, Silicon Controlled Rectifier, Diac, Triac, Power BJT, LED, LCD,
Phototransistor, Opto Coupler, Solar cell .
Course Outcomes:

Students will be able to


CO1: Explain the V-I characteristic of PN diode
CO2: Examine the characteristic of Bipolar Junction Transistors and Field Effect Transistors
CO3: Identify the Special Semiconductor devices and Power devices.
CO4: Analyze the Characteristics of PN, BJT, ZENER
CO5: Analyze the Characteristics of FET, SCR, Clipper, Clamper and FWR

Text Books:
1. Donald A Neaman, “Semiconductor Physics and Devices”, Tata Mc GrawHill Inc., Fourth Edition,
2012.
2.Electronic Devices and Circuits- Jacob Millman, C. Halkias, Satyabrata jit, McGraw Hill Education
4th edition,2015
3. Godse,”Electronic Devices and circuits ”, Technical Publication,2017
4. Salivahanan. S, Suresh Kumar. N and Vallavaraj. A, “Electronic Devices and circuits”, Tata
McGraw Hill Publishing Company, New Delhi, Third Edition, 2018.

Reference Books:
1.Electronic Devices 10th edition. Published by Pearson, Thomas L. Floyd,2019.
2. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory”, Pearson Prentice
Hall, Tenth edition, 2008.
3. Bell, C.Gordon Newell, “Electronics circuits and devices”, Pearson/Prentice Hall, 2012.
4. R.S.Sedha, “A Text Book of Applied Electronics”, S.Chand Publications, 2006.

List of Experiments:
1. Design and obtain the Characteristics of PN Junction Diode -3
2. Design and obtain the Zener diode Characteristics & Regulator using
Zener diode -4
3. Design and obtain the Common Emitter input-output Characteristics-4
4. Design and obtain the Common Base input-output Characteristics -4
5. Design and obtain the FET Characteristics-4
6. Design and obtain the SCR Characteristics -4
7. Design and obtain the Clipper and Clamper -3
8. Design and obtain the Full Wave Rectifier.-4

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