Data Sheet: NPN Medium Power Transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N1711
NPN medium power transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 28
Philips Semiconductors
2N1711
FEATURES
PINNING
High current (max. 500 mA)
PIN
Low voltage (max. 50 V).

APPLICATIONS
DESCRIPTION
emitter
base
collector, connected to case
DC and wideband amplifiers.

DESCRIPTION
1
handbook, halfpage
NPN medium power transistor in a TO-39 metal package.

2
3
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
75
VCEO
collector-emitter voltage
open base
50
ICM
peak collector current
Ptot
total power dissipation
Tamb 25 C
0.8
hFE
DC current gain
IC = 150 mA; VCE = 10 V
100
300
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
70
1997 May 28
MHz
2N1711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
75
VCEO
collector-emitter voltage
open base
50
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
500
mA
ICM
peak collector current
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb 25 C
0.8
Tcase 100 C
1.7
Tcase 25 C
Tstg
storage temperature
65
+150
Tj
junction temperature
200
Tamb
operating ambient temperature
65
+150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
VALUE
UNIT
219
K/W
58.3
K/W
in free air
CHARACTERISTICS
Tamb = 25 C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 60 V
10
nA
IE = 0; VCB = 60 V; Tamb = 150 C
10
IC = 0; VEB = 5 V
nA
IC = 10 A; VCE = 10 V
20
IC = 0.1 mA; VCE = 10 V
35
IC = 10 mA; VCE = 10 V; note 1
75
IC = 10 mA; VCE = 10 V; Tamb = 55 C
35
IC = 150 mA; VCE = 10 V; note 1
100
300
IC = 500 mA; VCE = 10 V; note 1
40
VCEsat
collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1
500
mV
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
1.3
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
70
MHz
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
25
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
80
pF
Note
1. Pulse test: tp 300 s; 0.02.
1997 May 28
2N1711
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
w M A M B M
1
b
D1
2
3
a
D
10 mm
scale
DIMENSIONS (mm are the original dimensions)

UNIT
mm
6.60
6.35
5.08
OUTLINE
VERSION
SOT5/11
1997 May 28
D1
14.2
12.7
0.2
45
0.48 9.39 8.33 0.85 0.95

0.41 9.08 8.18 0.75 0.75
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
TO-39
2N1711
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 28
2N1711
NOTES
1997 May 28
2N1711
NOTES
1997 May 28
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Internet: http://www.semiconductors.philips.com
Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 May 28
Document order number:
9397 750 02388

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www.agelectronica.

NPN medium power transistor

High current (max. 500 mA)

Low voltage (max. 50 V).

collector, connected to case

DC and wideband amplifiers.

NPN medium power transistor in a TO-39 metal package.

Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA

peak collector current

total power dissipation

IC = 150 mA; VCE = 10 V

IC = 50 mA; VCE = 10 V; f = 100 MHz

NPN medium power transistor

collector current (DC)

peak collector current

peak base current

total power dissipation

operating ambient temperature

thermal resistance from junction to ambient

thermal resistance from junction to case

emitter cut-off current

IE = 0; VCB = 60 V; Tamb = 150 C

IC = 0.1 mA; VCE = 10 V

IC = 10 mA; VCE = 10 V; note 1

IC = 10 mA; VCE = 10 V; Tamb = 55 C

IC = 150 mA; VCE = 10 V; note 1

IC = 500 mA; VCE = 10 V; note 1

collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

IC = 50 mA; VCE = 10 V; f = 100 MHz

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

NPN medium power transistor

DIMENSIONS (mm are the original dimensions)

0.48 9.39 8.33 0.85 0.95

NPN medium power transistor

This data sheet contains final product specifications.

NPN medium power transistor

NPN medium power transistor

Philips Semiconductors a worldwide company

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Philips Electronics N.V. 1997

Printed in The Netherlands

Date of release: 1997 May 28

Document order number:

9397 750 02388

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