Data Sheet: PMBF4391 PMBF4392 PMBF4393
Data Sheet: PMBF4391 PMBF4392 PMBF4393
Data Sheet: PMBF4391 PMBF4392 PMBF4393
DATA SHEET
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
Product specification
April 1995
NXP Semiconductors
Product specification
PMBF4391;
PMBF4392; PMBF4393
N-channel FETs
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for low-power
chopper or switching applications in
industry.
= drain
= source
= gate
PINNING
1
handbook, halfpage
Top view
MAM385
Note
1. Drain and source are
interchangeable.
Marking code
PMBF4391 = p6J
PMBF4392 = p6K
PMBF4393 = p6G
PMBF4392
PMBF4393
VDS
max.
40
40
40
IDSS
50
25
0.5
10
Rds on
30
60
100
Crs
3.5
3.5
3.5
pF
ID = 12 mA; VGSM = 12 V
toff
20
ns
ID = 6 mA; VGSM = 7 V
toff
35
ns
ID = 3 mA; VGSM = 5 V
toff
50
ns
Drain-source voltage
Drain current
VDS = 20 V; VGS = 0
mA
V(P)GS
April 1995
NXP Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
max.
40 V
Drain-gate voltage
VDGO
max.
40 V
Gate-source voltage
VGSO
max.
40 V
IG
max.
50 mA
Ptot
max.
250 mW
(1)
65 to 150 C
Tstg
Junction temperature
Tj
max.
150 C
Rth j-a
430 K/W
THERMAL RESISTANCE
From junction to ambient(1)
CHARACTERISTICS
Tj = 25 C unless otherwise specified
Gate-source voltage
VGSon
VDS = 0 V; VGS = 20 V
IGSS
0.1
nA
IGSS
0.2
PMBF4392
PMBF4393
IG = 1 mA; VDS = 0
Gate-source cut-off current
PMBF4391
IDSS
50
150
25
75
5
30
mA
mA
V(BR)GSS
40
40
40
V(P)GS
4
10
2
5
0.5
3
V
V
ID = 12 mA; VGS = 0
VDSon
0.4
ID = 6 mA; VGS = 0
VDSon
0.4
ID = 3 mA; VGS = 0
VDSon
0.4
rds on
30
100
Drain current
VDS = 20 V; VGS = 0
Gate-source breakdown voltage
IG = 1 A; VDS = 0
Gate-source cut-off voltage
ID = 1 nA; VDS = 20 V
Drain-source voltage (on)
0.1
nA
VGS = 7 V
IDSX
0.1
nA
VGS = 5 V
IDSX
0.1
nA
VGS = 12 V
VGS = 12 V
VDS = 20 V
IDSX
0.2
VGS = 7 V
IDSX
0.2
VGS = 5 V
IDSX
0.2
April 1995
NXP Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
PMBF4391
Input capacitance
PMBF4392
PMBF4393
Cis
14
14
14
pF
Feedback capacitance
VGS = 12 V
; VDS = 0
Crs
3.5
pF
VGS = 7 V
; VDS = 0
Crs
3.5
pF
VGS = 5 V
; VDS = 0
Crs
3.5
pF
ID
12
mA
VGS off
12
Switching times
VDD = 10 V
; VDS = 0
RL
750
1550
3150
Rise time
tr
ns
Turn on time
ton
15
15
15
ns
Fall time
tf
15
20
30
ns
toff
20
35
50
ns
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
VGS = 0 V
10%
Vi
VGS off
90%
ton
toff
tr
tf
90%
Vo
10%
MBK288
April 1995
NXP Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
Pulse generator:
tr
0.5 ns
tf
0.5 ns
tp
100 s
0.01
Oscilloscope:
1 F
50
handbook, halfpage
VDD
10 nF
Ri
10 F
RL
DUT
SAMPLING
SCOPE
50
50
MBK289
MDA245
300
handbook, halfpage
Ptot
(mW)
200
100
0
0
40
80
120
200
160
Tamb (C)
April 1995
50
NXP Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
HE
v M A
Q
A
A1
2
e1
bp
c
w M B
Lp
e
detail X
2 mm
scale
A1
max.
bp
e1
HE
Lp
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
April 1995
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
NXP Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Development
This document contains data from the objective specification for product
development.
Qualification
Production
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
April 1995
NXP Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
April 1995
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R77/02/9
Mouser Electronics
Authorized Distributor
NXP:
PMBF4391,215 PMBF4392,215 PMBF4393,215