Fs 7 SM 18

MITSUBISHI Nch POWER MOSFET
FS7SM-18A
HIGH-SPEED SWITCHING USE
FS7SM-18A
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
5.0
20.0
3.2
19.5MIN.
4.4
1.0
q
5.45
e
5.45
0.6
2.8
4
wr
q GATE
w DRAIN
e SOURCE
r DRAIN
VDSS ............................................................................... 900V

rDS (ON) (MAX) ................................................................ 2.0
ID ........................................................................................... 7A
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
(Tc = 25C)
Parameter
Conditions
Drain-source voltage
VGS = 0V
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
VDS = 0V
Storage temperature
Weight
Typical value
Ratings
Unit
900
30
V
V
7
21
150
A
A
W
55 ~ +150
55 ~ +150
4.8
C
C
g
Feb.1999
FS7SM-18A
ELECTRICAL CHARACTERISTICS
(Tch = 25C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage

Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
ID = 1mA, VGS = 0V
IGS = 100A, VDS = 0V
VGS = 25V, VDS = 0V
VDS = 900V, VGS = 0V
Gate-source threshold voltage

Drain-source on-state resistance
ID = 1mA, VDS = 10V

ID = 3A, VGS = 10V
ID = 3A, VGS = 10V
ID = 3A, VDS = 10V
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Drain-source on-state voltage

Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Limits
Test conditions
Turn-off delay time

Fall time
Source-drain voltage
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 3A, VGS = 10V,

RGEN = RGS = 50
IS = 3A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
Typ.
Max.
900
30
10
V
V
A
3
1.54
4.62
1
4
2.00
6.00
mA
V
4.2
7.0
1380
140
28
S
pF
pF
pF
25
28
185
46
ns
ns
ns
ns
1.0
1.5
0.83
C/W
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
160
120
80
40
50
100
150
200
tw = 10ms
101
7
5
3
2
100ms
100
7
5
3
2
10ms
101
7
5
3
1ms
100ms
DC
TC = 25C
Single Pulse
3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
MAXIMUM SAFE OPERATING AREA

3
2
TC = 25C
Pulse Test
TC = 25C
Pulse Test
VGS = 20V
16
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE

200
10V
12
5V
8
PD = 150W
VGS = 20V
10V
5V
4.5V
2
4V
4V
10
20
30
40
3.5V
50
12
16
20

Feb.1999
FS7SM-18A
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ID = 14A
30
20
7A
10
3A
12
16
VGS = 10V
3.0
20V
2.0
1.0
0
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT
(TYPICAL)
101
VDS = 10V
7 Pulse Test
5
TC = 25C
VDS = 50V
Pulse Test
FORWARD TRANSFER
ADMITTANCE yfs (S)
12
TC = 25C
75C
125C
2
100
7
5
3
2
12
16
101 1
10
20
2 3
5 7 100
2 3
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3
2
103
7
5
Ciss
103
7
5
3
2
102
7
5
3 Tch = 25C
2 f = 1MHZ
101
4.0
16
TC = 25C
Pulse Test
20
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) ()
40
CAPACITANCE
Ciss, Coss, Crss (pF)
5.0
TC = 25C
Pulse Test
Coss
Crss
VGS = 0V
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2

SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
50
ON-STATE RESISTANCE VS.

DRAIN CURRENT
(TYPICAL)
Tch = 25C
VDD = 200V
VGS = 10V
RGEN = RGS = 50
td(off)
2
102
7
5
tf
tr
3
2
101 1
10
td(on)
2 3
5 7 100
2 3
5 7 101

Feb.1999
FS7SM-18A
20
SOURCE CURRENT IS (A)
VDS = 250V
12
400V
600V
20
40
60
80
TC = 125C
12
75C
8
25C
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
50
50
100
3.0
2.0
1.0
150
BREAKDOWN VOLTAGE VS.

CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
50
50
100
150
CHANNEL TEMPERATURE Tch (C)
VDS = 10V
ID = 1mA
4.0
0.4
GATE CHARGE Qg (nC)
101
7
5
101
VGS = 0V
Pulse Test
16
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
20
Tch = 25C
ID = 7A
16
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
50
100
150
TRANSIENT THERMAL IMPEDANCE Zth (chc) (C/W)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS
101
7
5
3
2
100
7
5
3
2
101
7
5
3
2
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
102 4
10 2 3 57103 2 3 571022 3 571012 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999

Fs 7 SM 18

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Fs 7 SM 18

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MITSUBISHI Nch POWER MOSFET

VDSS ............................................................................... 900V

MITSUBISHI Nch POWER MOSFET

Drain-source breakdown voltage

Gate-source threshold voltage

ID = 1mA, VDS = 10V

Drain-source on-state voltage

Turn-off delay time

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 3A, VGS = 10V,

DRAIN CURRENT ID (A)

3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3

CASE TEMPERATURE TC (C)

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN CURRENT ID (A)

MAXIMUM SAFE OPERATING AREA

DRAIN CURRENT ID (A)

POWER DISSIPATION PD (W)

POWER DISSIPATION DERATING CURVE

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN-SOURCE VOLTAGE VDS (V)

MITSUBISHI Nch POWER MOSFET

FORWARD TRANSFER ADMITTANCE

GATE-SOURCE VOLTAGE VGS (V)

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

GATE-SOURCE VOLTAGE VGS (V)

DRAIN CURRENT ID (A)

2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2

SWITCHING TIME (ns)

ON-STATE RESISTANCE VS.

DRAIN CURRENT ID (A)

MITSUBISHI Nch POWER MOSFET

SOURCE CURRENT IS (A)

SOURCE-DRAIN VOLTAGE VSD (V)

ON-STATE RESISTANCE VS.

THRESHOLD VOLTAGE VS.

BREAKDOWN VOLTAGE VS.

CHANNEL TEMPERATURE Tch (C)

CHANNEL TEMPERATURE Tch (C)

GATE CHARGE Qg (nC)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)

CHANNEL TEMPERATURE Tch (C)

TRANSIENT THERMAL IMPEDANCE Zth (chc) (C/W)

GATE-SOURCE VOLTAGE VGS (V)

TRANSIENT THERMAL IMPEDANCE

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