Vishay TP0610K T1 GE3 Datasheet

TP0610K
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
VGS(th) (V)
ID (mA)
- 60
6 at VGS = - 10 V
- 1 to - 3
- 185
TO-236
(SOT-23)
G
Marking Code: 6Kwll

6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
Top View
Ordering Information: TP0610K-T1-E3 (Lead (Pb)-free)
TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)
Halogen-free According to IEC 61249-2-21

Definition
TrenchFET Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
Compliant to RoHS directive 2002/95/EC
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
BENEFITS
Ease in Driving Switches

Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted

Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
20
Continuous Drain Currenta
TA = 25 C
TA = 100 C
Pulsed Drain Currentb

Power Dissipationa
Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
ID
IDM
TA = 25 C
TA = 100 C
PD
Unit
V
- 185
- 115
mA
- 800
350
140
mW
RthJA
350
C/W
TJ, Tstg
- 55 to 150
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71411

S09-0533-Rev. F, 06-Apr-09
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TP0610K
Vishay Siliconix
SPECIFICATIONS TA = 25 C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 10 A
- 60
VGS(th)
VDS = VGS, ID = - 250 A
-1
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
-3
VDS = 0 V, VGS = 20 V
IGSS
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistance
RDS(on)
10
VDS = 0 V, VGS = 10 V
200
VDS = 0 V, VGS = 10 V, TJ = 85 C
500
VDS = 0 V, VGS = 5 V
100
VDS = - 60 V, VGS = 0 V
- 25
VDS = - 60 V, VGS = 0 V, TJ = 85 C
- 250
VGS = - 10 V, VDS = - 4.5 V
- 500
VGS = - 10 V, VDS = - 10 V
- 600
VGS = - 4.5 V, ID = - 25 mA
10
VGS = - 10 V, ID = - 500 mA
Forward
Diode Forward Voltage
gfs
VDS = - 10 V, ID = - 100 mA
VSD
IS = - 200 mA, VGS = 0 V
nA
mA
VGS = - 10 V, ID = - 500 mA, TJ =125 C

Transconductancea
9
80
mS
- 1.4
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = - 30 V, VGS = - 15 V
ID - 500 mA
1.7
0.26
nC
0.46
23
VDS = - 25 V, VGS = 0 V
f = 1 MHz
10
pF
Switchingb
Turn-On Time
td(on)
Turn-Off Time
td(off)
VDD = - 25 V, RL = 150
ID - 200 mA, VGEN = - 10 V, Rg = 10
25
35
ns
Notes:
a. Pulse test: PW 300 s duty cycle 2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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S09-0533-Rev. F, 06-Apr-09
TP0610K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1.0
1200
VGS = 10 V
TJ = - 55 C
7V
0.8
I D - Drain Current (mA)
ID - Drain Current (A)
8V
0.6
6V
0.4
5V
900
25 C
125 C
600
300
0.2
4V
0.0
0
0
VDS - Drain-to-Source Voltage (V)
10
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
40
20
VGS = 0 V
VGS = 4.5 V
32
C - Capacitance (pF)
RDS(on) - On-Resistance ()
16
12
VGS = 5 V
8
VGS = 10 V
Ciss
24
16
Coss
8
Crss
0
0
200
400
600
800
1000
ID - Drain Current (mA)
10
25
Capacitance
15
1.8
ID = 500 mA
1.5
12
VDS = 30 V
RDS(on) - On-Resistance
(Normalized)
20
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VDS = 48 V
9
0
0.0
15
VGS = 10 V at 500 mA
1.2
VGS = 4.5 V at 25 mA
0.9
0.6
0.3
0.3
0.6
0.9
1.2
Qg - Total Gate Charge (nC)
Gate Charge

S09-0533-Rev. F, 06-Apr-09
1.5
1.8
0.0
- 50
- 25
25
50
75
100
125
150
TJ - Junction Temperature (C)
On-Resistance vs. Junction Temperature
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TP0610K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
10
1000
RDS(on) - On-Resistance ()
I S - Source Current (A)
VGS = 0 V
100
TJ = 125 C
10
TJ = 25 C
ID = 500 mA
4
ID = 200 mA
2
TJ = - 55 C
0
1
0.00
0.3
0.6
0.9
1.2
V SD - Source-to-Drain Voltage (V)
1.5
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
0.5
0.4
2.5
ID = 250 A
0.3
2
0.2
Power (W)
VGS(th) Variance (V)
0.1
1.5
- 0.0
1
TA = 25 C
- 0.1
0.5
- 0.2
- 0.3
- 50
0
- 25
25
50
75
100
125
150
0.1
0.01
100
10
TJ - Junction Temperature (C)
Time (s)
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
600
Normalized Effective Transient

Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 350 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71411.
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4

S09-0533-Rev. F, 06-Apr-09
Legal Disclaimer Notice

Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.

Revision: 18-Jul-08
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TP0610K

P-Channel 60-V (D-S) MOSFET

Marking Code: 6Kwll

Halogen-free According to IEC 61249-2-21

Ease in Driving Switches

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted

Continuous Drain Currenta

Pulsed Drain Currentb

Document Number: 71411

VDS = VGS, ID = - 250 A

Zero Gate Voltage Drain Current

On-State Drain Currenta

VGS = - 10 V, VDS = - 4.5 V

Diode Forward Voltage

IS = - 200 mA, VGS = 0 V

VGS = - 10 V, ID = - 500 mA, TJ =125 C

Reverse Transfer Capacitance

Document Number: 71411

I D - Drain Current (mA)

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

ID - Drain Current (mA)

VGS - Gate-to-Source Voltage (V)

V DS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Document Number: 71411

TJ - Junction Temperature (C)

On-Resistance vs. Junction Temperature

I S - Source Current (A)

VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-Source Voltage

VGS(th) Variance (V)

TJ - Junction Temperature (C)

Threshold Voltage Variance Over Temperature

Single Pulse Power, Junction-to-Ambient

Normalized Effective Transient

Normalized Thermal Transient Impedance, Junction-to-Ambient

Document Number: 71411

Legal Disclaimer Notice

Document Number: 91000

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