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    Mtn2302N3: Cystech Electronics Corp

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    Anonymous 28jRu2j
    This document provides specifications for the MTN2302N3 20V N-channel enhancement mode MOSFET from CYStech Electronics Corp. It includes: - Electrical characteristics such as an on-resistance of 65mΩ at 4.5V gate voltage. - Thermal performance metrics like a junction-to-ambient thermal resistance of 100°C/W. - Package details for the compact SOT-23 packaging including pinout, dimensions, and material information.

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    © All Rights Reserved
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    Mtn2302N3: Cystech Electronics Corp

    Uploaded by

    Anonymous 28jRu2j
    56 views6 pages
    This document provides specifications for the MTN2302N3 20V N-channel enhancement mode MOSFET from CYStech Electronics Corp. It includes: - Electrical characteristics such as an on-resistance of 65mΩ at 4.5V gate voltage. - Thermal performance metrics like a junction-to-ambient thermal resistance of 100°C/W. - Package details for the compact SOT-23 packaging including pinout, dimensions, and material information.

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    This document provides specifications for the MTN2302N3 20V N-channel enhancement mode MOSFET from CYStech Electronics Corp. It includes: - Electrical characteristics such as an on-resistance of 65mΩ at 4.5V gate voltage. - Thermal performance metrics like a junction-to-ambient thermal resistance of 100°C/W. - Package details for the compact SOT-23 packaging including pinout, dimensions, and material information.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    56 views6 pages

    Mtn2302N3: Cystech Electronics Corp

    Uploaded by

    Anonymous 28jRu2j
    This document provides specifications for the MTN2302N3 20V N-channel enhancement mode MOSFET from CYStech Electronics Corp. It includes: - Electrical characteristics such as an on-resistance of 65mΩ at 4.5V gate voltage. - Thermal performance metrics like a junction-to-ambient thermal resistance of 100°C/W. - Package details for the compact SOT-23 packaging including pinout, dimensions, and material information.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    Spec. No.

    : C323N3
    Issued Date : 2004.04.05
    Revised Date : 2004.10.22
    Page No. : 1/5

    CYStech Electronics Corp.

    . .

    20V N-CHANNEL Enhancement Mode MOSFET

    MTN2302N3
    Features
    VDS=20V
    RDS(ON)=65m@VGS=4.5V, IDS=3.6A
    RDS(ON)=95m@VGS=2.5V, IDS=3.1A
    Advanced trench process technology
    High density cell design for ultra low on resistance
    Excellent thermal and electrical capabilities
    Compact and low profile SOT-23 package

    Equivalent Circuit

    Outline

    MTN2302N3

    SOT-23
    D

    G
    GGate
    SSource
    DDrain

    Absolute Maximum Ratings (Ta=25C)


    Parameter
    Drain-Source Voltage
    Gate-Source Voltage
    Continuous Drain Current
    Pulsed Drain Current
    Maximum Power Dissipation

    Ta=25
    Ta=75

    Operating Junction Temperature


    Storage Temperature

    MTN2302N3

    Symbol

    Limits

    Unit

    VDS
    VGS
    ID
    IDM

    20
    8
    2.4
    10
    1.25

    V
    V
    A
    A

    PD
    Tj
    Tstg

    0.8
    -55~+150
    -55~+150

    W
    C
    C

    CYStek Product Specification

    Spec. No. : C323N3


    Issued Date : 2004.04.05
    Revised Date : 2004.10.22
    Page No. : 2/5

    CYStech Electronics Corp.

    . .

    Thermal Performance
    Parameter
    Thermal Resistance, Junction-to-Ambient(PCB mounted)
    Lead Temperature, for 5 second Soldering(1/8 from case)

    Symbol

    Limit

    Unit

    Rth,ja
    TL

    100
    260

    C/W
    C

    Note : Surface mounted on FR-4 board, t5sec.

    Electrical Characteristics (Ta=25C)


    Symbol
    Static
    BVDSS
    VGS(th)
    IGSS/F
    IGSS/R
    IDSS
    *ID(ON)
    *RDS(ON)

    Min.

    Typ.

    Max.

    Unit

    20
    0.45
    6
    -

    50
    75
    10

    100
    -100
    1
    65
    95
    -

    V
    V
    nA
    nA
    A
    A

    450
    70
    43
    7
    55
    16
    10
    5.2
    0.65
    1.5

    15
    80
    60
    25
    10
    -

    0.75

    1.6
    1.2

    *GFS
    Dynamic
    Ciss
    Coss
    Crss
    td(ON)
    tr
    td(OFF)
    tf
    Qg
    Qgs
    Qgd
    Source-Drain Diode
    ISD
    VSD
    -

    Test Conditions

    VGS=0, ID=250A
    VDS=VGS, ID=250A
    VGS=+8V, VDS=0
    VGS=-8V, VDS=0
    VDS=20V, VGS=0
    VDS=5V, VGS=4.5V
    ID=3.6A, VGS=4.5V
    ID=3.1A, VGS=2.5V
    VDS=5V, ID=3.6A

    pF

    VDS=10V, VGS=0, f=1MHz

    ns

    VDD=10V, ID=1A, RL=10


    VGEN=4.5V, RG=6

    nC

    VDS=10V, ID=3.6A,
    VGS=4.5V,

    A
    V

    VGS=0V, ISD=1A

    *Pulse Test : Pulse Width 300s, Duty Cycle2%

    MTN2302N3

    CYStek Product Specification

    CYStech Electronics Corp.

    Spec. No. : C323N3


    Issued Date : 2004.04.05
    Revised Date : 2004.10.22
    Page No. : 3/5

    . .

    Characteristic Curves

    MTN2302N3

    CYStek Product Specification

    CYStech Electronics Corp.

    MTN2302N3

    Spec. No. : C323N3


    Issued Date : 2004.04.05
    Revised Date : 2004.10.22
    Page No. : 4/5

    . .

    CYStek Product Specification

    CYStech Electronics Corp.

    Spec. No. : C323N3


    Issued Date : 2004.04.05
    Revised Date : 2004.10.22
    Page No. : 5/5

    . .

    SOT-23 Dimension

    Marking:

    A
    L
    3
    B

    TE
    02

    3-Lead SOT-23 Plastic


    Surface Mounted Package
    CYStek Package Code: N3

    Style: Pin 1.Gate 2.Source 3.Drain

    C
    D

    *: Typical

    Inches
    Min.
    Max.
    0.1102 0.1204
    0.0472 0.0630
    0.0335 0.0512
    0.0118 0.0197
    0.0669 0.0910
    0.0005 0.0040

    DIM
    A
    B
    C
    D
    G
    H

    Millimeters
    Min.
    Max.
    2.80
    3.04
    1.20
    1.60
    0.89
    1.30
    0.30
    0.50
    1.70
    2.30
    0.013
    0.10

    DIM
    J
    K
    L
    S
    V

    Inches
    Min.
    Max.
    0.0034 0.0070
    0.0128 0.0266
    0.0335 0.0453
    0.0830 0.1083
    0.0098 0.0256

    Millimeters
    Min.
    Max.
    0.085
    0.177
    0.32
    0.67
    0.85
    1.15
    2.10
    2.75
    0.25
    0.65

    Notes: 1.Controlling dimension: millimeters.


    2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
    3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

    Material:
    Lead: 42 Alloy ; solder plating
    Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

    Important Notice:
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
    CYStek reserves the right to make changes to its products without notice.
    CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
    CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

    MTN2302N3

    CYStek Product Specification

    www.s-manuals.com

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