Pin Description Features: Dual N-Channel Enhancement Mode MOSFET

APM7313
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V/6A , RDS(ON)=21m(typ.) @ VGS=10V
SO-8
RDS(ON)=27m(typ.) @ VGS=4.5V
S1
D1
G1
D1
Reliable and Rugged
S2
D2
SO-8 Package
G2
D2
Super High Dense Cell Design for Extremely

Low RDS(ON)
Top View
Applications
D1
D1
D2
D2
Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.
G1
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
Ordering and Marking Information

APM 7313
P ackage C ode
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
APM 7313 K :
APM 7313
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings

Symbol
(TA = 25C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
20
Unit
V
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
APM7313
Absolute Maximum Ratings (Cont.)
Symbol
ID
Parameter
Rating
Unit
Maximum Drain Current Continuous
IDM
Maximum Drain Current Pulsed
24
PD
Maximum Power Dissipation
TA=25C
2.5
TA=100C
1.0
150
-55 to 150
50
C/W
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
RjA
Thermal Resistance Junction to Ambient
* Surface Mounted on FR4 Board, t 10 sec.
Electrical Characteristics
Symbol
Parameter

Test Condition
APM7313
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
Voltage
BVDSS
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
IDSS
VGS(th)
IGSS
Gate Leakage Current

Drain-Source On-state
RDS(ON)a
Resistance
Diode Forward Voltage
VSDa
VGS=0V , IDS=250A
30
V
1
1.5
VGS=20V , VDS=0V
VGS=10V , IDS=3.5A
nA
21
100
28
VGS=4.5V , IDS=2A
27
42
ISD=2A , VGS=0V
0.7
1.3
VDS=15V , IDS= 10A
30
36
VDS=24V , VGS=0V
VDS=VGS , IDS=250A
m
V
Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
VGS=10V
Tr
Turn-on Rise Time
VDD=15V , IDS=2A ,
td(OFF)
Turn-off Delay Time
VGEN=10V , RG=6
Tf
Turn-off Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Notes
a
b
nC
5.8
3.8
VGS=0V
11
22
17
33
37
68
20
38
ns
1200
VDS=25V
Reverse Transfer Capacitance Frequency=1.0MHz
210
pF
95
: Pulse test ; pulse width 300s, duty cycle 2%

: Guaranteed by design, not subject to production testing

Rev. A.5 - Feb., 2003
www.anpec.com.tw
APM7313
Typical Characteristics
Output Characteristics
Transfer Characteristics
40
30
IDS-Drain Current (A)
VGS=4,4.5,6,8,10V
25
20
15
VGS=3.5V
10
V GS=3V
5
30
20
TJ=25C
TJ=125C
10
VGS=2.5V
0
1.0
0
0
10
1.5
VDS-Drain-to-Source Voltage (V)
2.0
2.5
3.0
3.5
4.0
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Threshold Voltage vs. Junction Temperature

1.2
0.050
IDS=250A
0.045
RDS(ON)-On-Resistance ()
VGS(th)-Threshold Voltage (V)

(Normalized)
TJ=-55C
1.0
0.8
0.6
0.040
VGS=4.5V
0.035
0.030
VGS=10V
0.025
0.020
0.015
0.010
0.005
0.4
-50
-25
25
50
75
100
125
0.000
150
Tj-Junction Temperature (C)

Rev. A.5 - Feb., 2003
10
15
20
25
30
www.anpec.com.tw
APM7313
Typical Characteristics (Cont.)
On-Resistaence vs. Junction Temperature

RDS(ON)-On Resistance () (Normalized)
On-Resistance vs. Gate-to-Source Voltage

0.050
IDS=3.5A
RDS (ON) - On-Resistance ()
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
VGS=10V
IDS=3.5A
1.4
1.2
1.0
0.8
0.6
-50
-25
25
50
75
100
125
Gate Voltage (V)
Tj-Junction Temperature (C)
Gate Charge
Capacitance Characteristics
150
2000
10
V DS= 1 5 V
I DS= 1 0 A
Ciss
1000
C-Capacitance (pF)
VGS-Gate-to-Source Voltage (V)
1.6
500
Coss
Crss
100
Frequency=1MHz
0
10
15
20
25
0.1
30
10
30
VDS-Drain-to-Source Voltage (V)
QG-Total Gate Charge (nC)

Rev. A.5 - Feb., 2003
www.anpec.com.tw
APM7313
Typical Characteristics (Cont.)
Single Pulse Power
Source-Drain Diode Forward Voltage

80
60
10
Power (W)
ISD-Source Current (A)
100
TJ=125C
40
TJ=-55C
20
TJ=25C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.01
1.4
0.1
VSD-Source to Drain Voltage
10
Time (sec)
Normalized Effective Transient

Thermal Impedance
Normalized Transient Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1. Duty Cycle , D=t1/t2
2. Per Unit Base=RthJA=50C/W
3. TJM-TA=PDMZthJA
4. Surface Mounted
D=0.02
SINGLE
0.01
1E-4
1E-3
0.01
0.1
10
Square Wave Pulse Duration (sec)

Rev. A.5 - Feb., 2003
www.anpec.com.tw
APM7313
Packaging Information
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
e2
D
A1
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
Min .
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020

Rev. A.5 - Feb., 2003
1. 27B S C
0. 50B S C
www.anpec.com.tw
APM7313
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183C
Pre-heat temperature
Time
Classification Reflow Profiles

Convection or IR/
Convection
Average ramp-up rate(183C to Peak)
3C/second max.
120 seconds max
Preheat temperature 125 25C)
60 150 seconds
Temperature maintained above 183C
Time within 5C of actual peak temperature 10 20 seconds
Peak temperature range
220 +5/-0C or 235 +5/-0C
Ramp-down rate
6 C /second max.
6 minutes max.
Time 25C to peak temperature
VPR
10 C /second max.
60 seconds
215-219C or 235 +5/-0C
10 C /second max.
Package Reflow Conditions

pkg. thickness 2.5mm
and all bgas
Convection 220 +5/-0 C
VPR 215-219 C
IR/Convection 220 +5/-0 C
pkg. thickness < 2.5mm and

pkg. volume 350 mm

Rev. A.5 - Feb., 2003
pkg. thickness < 2.5mm and pkg.

volume < 350mm
Convection 235 +5/-0 C
VPR 235 +5/-0 C
IR/Convection 235 +5/-0 C
www.anpec.com.tw
APM7313
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78
Description
245C , 5 SEC
1000 Hrs Bias @ 125 C
168 Hrs, 100 % RH , 121C
-65C ~ 150C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms , Itr > 100mA
Carrier Tape & Reel Dimensions

t
D
Po
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
T1
SOP-8
A
3301
Application
SOP-8
F
5.5 0.1
Application
B
62 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.550.1 1.55+ 0.25 4.0 0.1
T1
12.4 +0.2
T2
2 0.2
W
12 + 0.3
- 0.1
P1
2.0 0.1
Ao
6.4 0.1
Bo
5.2 0.1
P
8 0.1
E
1.75 0.1
Ko
t
2.1 0.1 0.30.013
(mm)

Rev. A.5 - Feb., 2003
www.anpec.com.tw
APM7313
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width

9.3
Devices Per Reel

2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Rev. A.5 - Feb., 2003
www.anpec.com.tw
This datasheet has been downloaded from:

www.DatasheetCatalog.com
Datasheets for electronic components.

Pin Description Features: Dual N-Channel Enhancement Mode MOSFET

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Pin Description Features: Dual N-Channel Enhancement Mode MOSFET

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APM7313

Dual N-Channel Enhancement Mode MOSFET

30V/6A , RDS(ON)=21m(typ.) @ VGS=10V

Reliable and Rugged

Super High Dense Cell Design for Extremely

Power Management in Notebook Computer ,

N-Channel MOSFET N-Channel MOSFET

Ordering and Marking Information

Absolute Maximum Ratings

(TA = 25C unless otherwise noted)

(TA = 25C unless otherwise noted)

Maximum Drain Current Continuous

Maximum Drain Current Pulsed

Maximum Power Dissipation

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance Junction to Ambient

* Surface Mounted on FR4 Board, t 10 sec.

(TA = 25C unless otherwise noted)

Zero Gate Voltage Drain

Gate Leakage Current

VDS=15V , IDS= 10A

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

: Pulse test ; pulse width 300s, duty cycle 2%

Copyright ANPEC Electronics Corp.

IDS-Drain Current (A)

IDS-Drain Current (A)

VDS-Drain-to-Source Voltage (V)

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

Threshold Voltage vs. Junction Temperature

VGS(th)-Threshold Voltage (V)

Tj-Junction Temperature (C)

Copyright ANPEC Electronics Corp.

IDS-Drain Current (A)

On-Resistaence vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

RDS (ON) - On-Resistance ()

Gate Voltage (V)

Tj-Junction Temperature (C)

VGS-Gate-to-Source Voltage (V)

VDS-Drain-to-Source Voltage (V)

QG-Total Gate Charge (nC)

Copyright ANPEC Electronics Corp.

Single Pulse Power

Source-Drain Diode Forward Voltage

ISD-Source Current (A)

VSD-Source to Drain Voltage

Normalized Effective Transient

Normalized Transient Thermal Transient Impedence, Junction to Ambient

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp.

SOP-8 pin ( Reference JEDEC Registration MS-012)

Copyright ANPEC Electronics Corp.

Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)