Microsemi 2014

Power Products
MICROSEMI POWER
Power PORTFOLIOPortfolio
Products 2014-2015
New image here TBD
Power Semiconductors
Power Modules
RF Power MOSFETs
Power Matters.
About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system
solutions for communications, defense & security, aerospace and industrial markets. Products include
high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs;
power management products; timing and synchronization devices and precise time solutions, setting the worlds standard
for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper
products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.
Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,400 employees globally. Learn more at:
www.microsemi.com.
CONTENTS
HIGH VOLTAGE SMPS TRANSISTORS Page No.
IGBTs (Insulated Gate Bipolar Transistors).......................................................................3-5
SiC and Power MOS 8TM MOSFETs / FREDFETs................................................................6-8
Ultra-Fast Low Gate Charge MOSFETs............................................................................... 9
CoolMOSTM MOSFETs....................................................................................................... 10
High Voltage Linear MOSFETs.......................................................................................... 10
DIODES
SiC Schottky and Ultra Fast Recovery Diodes .............................................................11-13
hIGH VOLTAGE RF MOSFETS......................................................................................... 14
hIGH fREQUENCY rf mOSFETS................................................................................... 14
driver-rf mosfet hybrids....................................................................................... 15
Reference Design kitS.............................................................................................. 15
Power Modules
Contents........................................................................................................................... 16
Electrical Configuration.................................................................................................... 17
Packaging......................................................................................................................... 18
Know How and Capabilities........................................................................................19-20
Part Numbering System.................................................................................................... 21
IGBTs (Insulated Gate Bipolar Transistors) .................................................................22-26
MOSFETs.....................................................................................................................27-31
Renewable Energy Power Modules.............................................................................31-32
SiC Power Modules.....................................................................................................33-35
Diodes and Rectifiers ..................................................................................................36-38
Package Outline Drawings............................................................................... 39-43
CoolMOS comprise a new family of transistors developed by Infineon Technologies AG.

CoolMOS is a trademark of Infineon Technologies AG.
ASPM, Power MOS 7 & T-MAX are registered trademarks of Microsemi Corporation.
Insulated Gate Bipolar Transistors (IGBTs)
IGBTs from Microsemi
IGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching
frequency range spans from DC for minimal conduction loss to 150kHz for very high power density SMPS applications. The frequency
range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the
best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT
technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.
IGBT Switching Frequency Ranges (kHz, hard switched)

0 20 40 60 80 100 120 140 160
Field Stop
600V
Power MOS 8TM PT
650V Power MOS 8TM NPT (NEW!)
900V Power MOS 8TM PT
Field Stop
1200V Power MOS 7TM PT
Power MOS 8TM NPT

Note: Frequency ranges shown are typical for a 50A IGBT. Refer to product data sheet max frequency vs current graph for more information.
Standard Voltage Technology Easy to Short Circuit Comment

Series Ratings (V) Parallel SOA
MOS 7 1200 PT Ultra-low gate charge
600, 650, 900,
MOS 8 PT, NPT Highest efficiency
1200
Field Stop
600, 1200 Field Stop X X Lowest conduction loss
Trench Gate
Product Options
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series
diode. Package options include TO-220, TO-247, T-MAX, TO-264, and SOT-227. Customized products are available; contact
factory for details.
3
BVces VCE(ON) Ic2 Maximum Ic Package
Volts Typ 25OC 100oC at Frequency Part Number Style
SINGLE 50 kHz 80 kHz
POWER MOS 8TM
2.5 25 25 21 APT25GR120B TO-247
2.5 25 25 21 APT25GR120S D3
NPT Technology 2.5 40 38 28 APT40GR120B TO-247
High Speed Switching 2.5 40 38 28 APT40GR120S D3
Low Switching Losses 2.5 50 48 36 APT50GR120B2 T-MAX
2.5 50 48 36 APT50GR120L TO-264
Easy to Parallel
1200 25 kHz 50 kHz
2.5 70 66 42 APT70GR120B2 T-MAX
2.5 70 66 42 APT70GR120L TO-264
2.5 70* 42 30 APT70GR120J ISOTOP
2.5 85 72 46 APT85GR120B2 T-MAX
2.5 85 72 46 APT85GR120L TO-264 TO-247[B]
2.5 85* 46 31 APT85GR120J ISOTOP

combi (IGbt & diode)
50 kHz 80 kHz
2.5 25 25 21 APT25GR120BD15 TO-247 (DQ)
2.5 25 25 21 APT25GR120SD15 D3 (DQ)
2.5 25 25 21 APT25GR120BSCD10 TO-247 (SiC SBD) D3 PAK[S]
2.5 25 25 21 APT25GR120SSCD10 D3 (SiC SBD)
1200 2.5 40 38 28 APT40GR120B2D30 T-MAX (DQ) Part Numbers for D3
2.5 40 38 28 APT40GR120B2SCD10 T-MAX (SiC SBD) packages - replace
25 kHz 50 kHz "B with S in part
2.5 50* 42 32 APT50GR120JD30 ISOTOP (DQ)
number
150 kHz 200 kHz

1.9 45 31 25 APT45GR65B TO-247
100 kHz 150 kHz
New! 650
1.9
1.9 70
95
52
50 kHz
39
100 kHz
APT70GR65B TO-247
69 41 APT95GR65B2 T-MAX T-MAX[B2]

650V
combi (IGBT & Diode) 150 kHz 200 kHz
1.9 45 31 25 APT45GR65BSCD10 TO-247 (SiC Diode)
100 kHz 150 kHz
1.9 45 30 18 APT45GR65B2DU30 T-MAX (DU Diode)
650 1.9 70 52 39 APT70GR65B2SCD30 T-MAX (SiC Diode)
50 kHz 100 kHz
1.9 70 59 38 APT70GR65B2DU40 T-MAX (DU Diode)
40 kHz 80 kHz
1.9 95 50 35 APT95GR65JDU60 ISOTOP (DU Diode) TO-264[L]
POWER MOS 8TM SINGLE 50 kHz 80 kHz

2.0 36 21 17 APT36GA60B TO-247 or D3
2.0 44 26 20 APT44GA60B TO-247 or D3
PT Technology 600 2.0 54 30 23 APT54GA60B TO-247 or D3
Fast Switching 2.0 68 35 27 APT68GA60B TO-247 or D3
Highest Efficiency 2.0 80 40 31 APT80GA60B TO-247 or D3
Combi with High 2.0 102 51 39 APT102GA60B2 T-MAX or TO-264
25 kHz 50 kHz
Speed DQ Diode 2.5 35 17 10 APT35GA90B TO-247 or D3
900 2.5 43 21 13 APT43GA90B TO-247 or D3 264-MAXTM[L2]
2.5 64 29 19 APT64GA90B TO-247 or D3
2.5 80 34 23 APT80GA90B TO-247 or D3
Part Numbers for
TO-264 packages -
combi (IGbt & DQ FRED) 50 kHz 80 kHz replace "B2" with
2.0 36 21 17 APT36GA60BD15 TO-247 or D3 "L" in part number
2.0 44 26 20 APT44GA60BD30 TO-247 or D3
600 2.0 54 30 23 APT54GA60BD30 TO-247 or D3
2.0 60 48 36 APT60GA60JD60 ISOTOP
2.0 68 35 27 APT68GA60B2D40 T-MAX or TO-264
2.0 80 40 31 APT80GA60LD40 TO-264
25 kHz 50 kHz
2.5 27 14 8 APT27GA90BD15 TO-247 or D3
2.5 35 17 10 APT35GA90BD15 TO-247 or D3
900 2.5 43 21 13 APT43GA90BD30 TO-247 or D3 ISOTOP[J]
2.5 46 33 21 APT46GA90JD40 ISOTOP SOT-227
2.5 64 29 19 APT64GA90B2D30 T-MAX or TO-264
2.5 80 34 23 APT80GA90LD40 TO-264 C

current @ Frequency Test Conditions: Tj = 125oC, Tc = 100oC except Isotop where Tc = 80oC, Vcc = 67% rated voltage Hard Switch G
* Ic2 for ISOTOP packages measured at 70C for 1200V NPT IGBTs
E
Datasheets available on www.microsemi.com All Products RoHS Compliant
4
BVces VCE(ON) Ic2 Maximum Ic Package
Volts Typ 25oC 100oC at Frequency Part Number Style
FIELD STOP SINGLE 15 kHz 30 kHz
1.5 24 15 10 APT20GN60BG TO-247
Trench Technology 1.5 37 20 14 APT30GN60BG TO-247
1.5 64 30 21 APT50GN60BG TO-247 TO-220[K]
Short Circuit 1.5 93 42 30 APT75GN60BG TO-247
Rated 600 1.5 123 75 47 APT150GN60J ISOTOP
Lowest 1.5 135 54 39 APT100GN60B2G T-MAX
Conduction Loss 1.5 190 79 57 APT150GN60B2G T-MAX
Easy Paralleling 1.5 230 103 75 APT200GN60B2G T-MAX
Combi with High 1.5 158 100 66 APT200GN60J ISOTOP
10 kHz 20 kHz D3 PAK[S]
Speed DQ Diode 1.7 33 19 13 APT25GN120BG TO-247 or D3
1.7 46 24 17 APT35GN120BG TO-247
1.7 66 32 22 APT50GN120B2G T-MAX
1200 1.7 70 44 27 APT100GN120J ISOTOP
1.7 99 45 30 APT75GN120B2G T-MAX or TO-264
1.7 120 58 38 APT100GN120B2G T-MAX
1.7 99 60 36 APT150GN120J ISOTOP
combi (IGbt & "dq" FRED) 15 kHz 30 kHz

1.5 24 15 10 APT20GN60BDQ1G TO-247
1.5 37 20 14 APT30GN60BDQ2G TO-247 TO-247[B]
1.5 64 30 21 APT50GN60BDQ2G TO-247
600 1.5 93 42 30 APT75GN60LDQ3G TO-264 Part Numbers for D3
1.5 123 75 47 APT150GN60JDQ4 ISOTOP packages -
1.5 135 54 39 APT100GN60LDQ4G TO-264 replace "B" with
1.5 190 79 57 APT150GN60LDQ4G TO-264 "S" in part number
1.5 158 100 66 APT200GN60JDQ4 ISOTOP
10 kHz 20 kHz
1.7 22 14 10 APT15GN120BDQ1G TO-247 or D3
1.7 33 19 13 APT25GN120B2DQ2G T-MAX
1.7 46 24 17 APT35GN120L2DQ2G 264-MAX
1200 1.7 57 36 22 APT75GN120JDQ3 ISOTOP
1.7 66 32 22 APT50GN120L2DQ2G 264-MAX
1.7 70 44 27 APT100GN120JDQ4 ISOTOP
1.7 99 60 36 APT150GN120JDQ4 ISOTOP
Power MOS 7 SINGLE 20 kHz 40 kHz
3.3 33 19 12 APT25GP120BG TO-247 T-MAX[B2]
and IGBT 3.3 46 24 15 APT35GP120BG TO-247
3.3 54 29 18 APT45GP120BG TO-247
PT Technology 1200 3.3 34 28 18 APT45GP120J ISOTOP
Ultra-low Gate 3.3 91 42 24 APT75GP120B2G T-MAX
Charge 3.3 57 40 23 APT75GP120J ISOTOP
Combi with High combi
(IGbt & "dq" FRED) 20 kHz 40 kHz
Speed DQ Diode 3.3 20 11 7 APT13GP120BDQ1G TO-247
3.3 33 19 12 APT25GP120BDQ1G TO-247
1200 3.3 46 24 15 APT35GP120B2DQ2G T-MAX
3.3 54 29 18 APT45GP120B2DQ2G T-MAX
3.3 34 28 18 APT45GP120JDQ2 ISOTOP
3.3 57 40 23 APT75GP120JDQ3 ISOTOP
TO-264[L]
Part Numbers for L

packages -
replace "B2" with
"L" in part number
ISOTOP[J]
SOT-227
G
current @ Frequency Test Conditions: Tj = 125 C, Tc = 100 C except Isotop where Tc = 80 C, Vcc = 67% rated voltage Hard Switch
o o o
E
5
SiC and Power MOS 8 MOSFETs
SiC Silicon Carbide MOSFETs

BVDSS RDS(ON) ID(Cont)
Part Number Package Style
Volts Ohms Amps
0.080 40 APT40SM120B TO-247
0.080 40 APT40SM120J ISOTOP
1200
0.050 50 APT50SM120B TO-247
0.050 50 APT50SM120J ISOTOP

Power MOS 8 TM
MOSFETs / FREDFETs TM
(fast body diode)

Power MOS 8 is Microsemi's latest family of high speed, high voltage (500-1200V)
N-channel switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These new MOSFETs / FREDFETs have been
optimized for both hard and soft switching in high frequency, high voltage applications rated
above 500W. There are 2 product types in the Power MOS 8 MOSFET family:
1) MOSFET
2) FREDFETs have a fast recovery body diode characteristic, providing high commutation dv/dt
ruggedness and high reliability in ZVS circuits.
Features Fast switching Avalanche energy rated

Low EMI Low gate charge
Quiet switching Lower cost
Applications Power factor correction Arc welding

Server and telecom power systems Plasma cutting
Solar inverters Battery chargers
Semiconductor capital equipment Medical
Induction heating
Quiet Switching
The new Power MOS 8 series is a result of extensive research into quiet switching. Input and reverse transfer capaci-
tance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The
Power MOS 8 series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and
lower cost than previous generations.
Body Diode Options

As with previous generation products, Power MOS 8 MOSFETs and FREDFETs are available in all voltage ratings. A
FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due
to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available.
6
Power MOS 8TM MOSFETs / FREDFETs
BV(DSS) RDS(ON) ID MOSFET ID FREDFET Package
Volts Max Part # Part # Style
3.80 5 APT4M120K TO-220
4.20 4 APT4F120K TO-220
2.40 7 APT7F120B TO-247 or D3 TO-220[K]
2.10 8 APT7M120B TO-247
1.20 14 APT13F120B TO-247 or D3
1.10 14 APT14M120B TO-247
1200
0.70 23 APT22F120B2 T-MAX or TO-264
0.63 24 APT24M120B2 T-MAX or TO-264
0.58 27 APT26F120B2 T-MAX or TO-264
TO-247[B]
0.58 18 APT17F120J ISOTOP
0.53 29 APT28M120B2 T-MAX or TO-264
0.53 19 APT19M120J ISOTOP
2.80 5 APT5F100K TO-220
D3 PAK[S]
2.50 6 APT6M100K TO-220
2.00 7 APT7F100B TO-247 Part Numbers for D3 pack-
ages - replace "B with
1.80 8 APT8M100B TO-247
S in part number
1.60 9 APT9F100B TO-247 or D3
1.40 9 APT9M100B TO-247
0.98 14 APT14F100B TO-247 or D3
0.88 14 APT14M100B TO-247 or D3
1000
0.78 17 APT17F100B TO-247 or D3
0.70 18 APT18M100B TO-247
0.44 30 APT29F100B2 T-MAX or TO-264
T-MAX[B2]
0.38 32 APT31M100B2 35 APT34F100B2 T-MAX or TO-264
0.38 21 APT21M100J 23 APT22F100J ISOTOP
0.33 37 APT37M100B2 T-MAX or TO-264
1.50 7 APT7F80K TO-220
1.35 8 APT8M80K TO-220
TO-264[L]
0.90 12 APT11F80B TO-247 or D3
0.80 13 APT12M80B TO-247 Part Numbers for TO-264
0.58 18 APT17F80B TO-247 or D3 packages - replace "B2"
0.53 19 APT18M80B TO-247 or D3 with "L" in part number
0.43 23 APT22F80B TO-247 or D3

800 0.39 25 APT24M80B TO-247 or D3
0.24 41 APT38F80B2 T-MAX or TO-264
0.19 49 APT48M80B2 T-MAX or TO-264
0.19 33 APT32M80J ISOTOP ISOTOP[J]
SOT-227
(ISOLATED BASE)

7
Power MOS 8TM MOSFETs / FREDFETs
BV(DSS) RDS(ON) ID MOSFET ID FREDFET Package
Volts Max Part # Part # Style
0.62 12 APT12F60K TO-220
0.43 16 APT15F60B TO-247 or D3
0.37 19 APT18F60B TO-247 or D3
TO-220[K] or TO-220[KF]*
0.29 24 APT23F60B TO-247 or D3
0.22 30 APT28F60B TO-247 or D3
0.19 36 APT34M60B 36 APT34F60B TO-247
600
0.11 42 APT39M60J 42 APT39F60J ISOTOP TO-247[B]
0.39 15 APT15F50K TO-220[K] or TO-220[KF]*
0.30 20 APT20F50B TO-247 or D3 D3 PAK[S]
0.24 24 APT24F50B TO-247 or D3 Part Numbers for D3 packages
0.19 30 APT30F50B TO-247 or D 3 - replace "B" with "S" in part
number
0.15 37 APT37F50B TO-247 or D3
0.13 43 APT42F50B TO-247 or D3
500
T-MAX[B2]
* Available on APT15F50K
Low Voltage Power MOS V MOSFETs / FREDFETs

0.085 40 APT30M85BVRG 40 APT30M85BVFRG TO-247
300 0.070 48 APT30M70BVRG 48 APT30M70BVFRG TO-247 or D3

0.040 70 APT30M40JVRG 70 APT30M40JVFRG ISOTOP TO-264[L]
0.019 130 APT30M19JVR 130 APT30M19JVFR ISOTOP Part Numbers for TO-264
0.045 56 APT20M45BVRG 56 APT20M45BVFRG TO-247 packages - replace "B2" with
"L" in part number
0.038 67 APT20M38BVRG 37 APT20M38BVFRG TO-247 or D3 or T/R
200
0.022 100 APT20M22B2VRG 100 APT20M22B2VFRG T-MAX or TO-264
0.011 175 APT20M11JVR 175 APT20M11JVFR ISOTOP
ISOTOP[J]
SOT-227
(ISOLATED BASE)

8
Ultrafast, Low Gate Charge MOSFETs
For 250 kHz - 2 MHz Switching Applications
The Ultrafast, Low Gate Charge MOSFET family combines the These devices are ideally suited for high frequency
lowest gate charge available in the industry with Microsemis and pulsed high voltage applications.
proprietary self-aligned aluminum metal gate structure. The Typical Applications:
result is a MOSFET capable of extremely fast switching speeds
and very low switching losses. The metal gate structure and the Class D amplifiers up to 2 MHz
layout of these chips provide an internal series gate resistance High voltage pulsed DC
(EGR) an order of magnitude lower than competitive devices AM transmitters
built with a polysilicon gate. Plasma deposition/etch
Features: Benefits:
l Series Gate Resistance (Rg) <0.1 ohm l Fast switching, uniform signal propagation
l Tr and Tf times of <10ns l Pulse power applications
l Industry's Lowest Gate Charge l Fast switching, reduced gate drive power
BV(DSS) RDS(ON) Package

ID MOSFET Part # FREDFET Part #
Volts Max Style
4.700 3.5 APT1204R7KFLLG TO-220
4.700 3.5 APT1204R7BFLLG TO-247 or D3
1.400 9 APT1201R4BFLLG TO-247
1200 0.670 18 APT12067B2LLG T-MAX
0.670 17 APT12067JLL ISOTOP
T-MAX[B2]
0.570 22 APT12057B2LLG T-MAX
0.900 12 APT10090BLLG TO-247
0.780 14 APT10078BLLG TO-247 or D3
0.450 23 APT10045B2LLG T-MAX or TO-264
1000 0.350 28 APT10035B2LLG T-MAX
TO-247[B]
0.260 38 APT10026L2FLLG TO-264 MAX
0.260 30 APT10026JLL APT10026JFLL ISOTOP
0.210 37 APT10021JLL APT10021JFLL ISOTOP
0.140 52 APT8014L2LLLG APT8014L2FLLG TO-264 MAX
0.110 51 APT8011JLL APT8011JFLL T-MAX or TO-264
800
0.200 38 APT8020B2LL T-MAX
ISOTOP[J]
0.200 33 APT8020JLL ISOTOP or D3 or T/R SOT-227
0.140 35 APT5014BLLG TO-247 (ISOLATED BASE)
0.100 46 APT5010B2LLG APT5010B2FLLG T-MAX or TO-264
0.065 67 APT50M65B2LLG APT50M65B2FLLG T-MAX or TO-264
0.065 58 APT50M65JLLG APT50M65JFLLG ISOTOP
500
0.075 51 APT50M75JLL APT50M75JFLL ISOTOP
0.075 57 APT50M75B2LLG T-MAX or TO-264
0.050 71 APT50M50JLL ISOTOP
0.038 88 APT50M38JLL ISOTOP

9
CoolMOS MOSFETs TM
BVDSS RDS(ON) ID(Cont)

Part Number Package Style
Volts Ohms Amps

c3 Technology
D3 PAK[S]
900 0.120 36 APT36N90BC3G TO-247 TO-220[K] TO-268
0.450 11 APT11N80KC3G TO-220
0.450 11 APT11N80BC3G TO-247
800
0.145 34 APT34N80B2C3G T-MAX or TO-264
0.145 34 APT34N80LC3G TO-264
0.035 94 APT94N65B2C3G T-MAX or TO-264
650
0.070 47 APT47N65BC3G TO-247 or D3
0.070 47 APT47N60BC3G TO-247 or D3 TO-247[B] T-MAX[B2]
600 0.035 77 APT77N60JC3 ISOTOP
0.042 94 APT94N60L2C3G 264-MAX
Server Series
0.045 60 APT60N60BCSG TO-247 or D3 or T/R

c6 Technology
0.041 77 APT77N60BC6 TO-247 or D3
0.070 53 APT53N60BC6 TO-247 or D3 TO-264[L] 264-MAX [L2]
600 0.099 38 APT38N60BC6 TO-247 or D
3
0.125 30 APT30N60KC6 TO-220

ISOTOP[J]
0.125 30 APT30N60BC6 TO-247 or D3
SOT-227
0.035 106 APT106N60B2C6 T-MAX or TO-264 (ISOLATED BASE)
650 0.041 85 APT97N65B2C6 T-MAX or TO-264

0.035 94 APT94N65B2C6 T-MAX
CoolMOS comprise a new family of transistors developed by Infineon Technologies AG.

CoolMOS is a trademark of Infineon Technologies AG.
Linear MOSFETs
What is a Linear MOSFET? Designers will need Linear MOSFETs when
A MOSFET specifically designed to be more robust than a standard MOSFET when High Current & > 200V >100msec
operated with both high voltage and high current near DC conditions (>100msecs). Used as a variable power resistor
The Problem with SMPS MOSFETs Soft start application (limit surge currents)
MOSFETs optimized for high frequency SMPS applications have poor high voltage DC Linear amplifier circuit
SOA. Most SMPS type MOSFETs over-state SOA capability at high voltage on the data sheets.
Above ~30V and DC conditions, SOA drops faster than is indicated by PD limited operation. Typical Applications
For pulsed loads (t<10ms) there is generally no problem using a standard MOSFET. Active loads above 200 volts such as DC dynamic
loads for testing power supplies, batteries, fuel cells, etc.
Technology Innovation High voltage, high current constant current sources.
Introduced in 1999, Microsemi modified its proprietary patented self-aligned metal gate
MOSFET technology for enhanced performance in high voltage, linear applications. These Linear
MOSFETs typically provide 1.5-2.0 times the DC SOA capability at high voltage compared to
other MOSFET technologies optimized for switching applications.
BVDSS RDS(ON) ID(Cont) SOA

Volts Ohms Amps Watts Part Number Package Style
1000 0.600 18 325 APL1001J
600 0.125 49 325 APL602B2G

0.125 43 325 APL602J
500 0.090 58 325 APL502B2G

ISOTOP[J]
0.090 52 325 APL502J SOT-227
T-MAX[B2] TO-264[L] (ISOLATED BASE)
Part Numbers for TO-264 packages - replace B2 with L in part
number
10
Ultra Fast Recovery Diodes
Microsemi PPG offers five series of discrete diode products: a new DL series low VF ultra-soft recovery, the medium speed medium VF
D series, the high speed DQ series, the very high speed DS series, and the silicon Schottky S series. These series of diodes are designed
to provide high quality solutions to a wide range of high voltage, high power application requirements, ranging from fast recovery for
continuous conduction mode power factor correction to low conduction loss for output rectification. Distinguishing features, technology
used, and applications for each product family are summarized in the table below.
Series Voltage Features Applications Comment

Ratings
Low VF
Output rectifier Ultra-soft recovery minimizes or
DL 600 Ultra-soft recovery
Resonant circuits eliminates snubber
Avalanche Rated
Freewheeling Diode
200, 300, 400, Medium VF
D Output rectifier Proprietary platinum process
600, 1000, 1200 Medium Speed
DC-DC converter
PFC
High speed
DQ 600, 1000, 1200 Freewheeling Diode Stepped epi improves softness
Avalanche Rated
DC-DC converter Proprietary platinum process
DS 600 Very high speed High frequency PFC Proprietary platinum process
Output rectifier
Low VF
Schottky 200 Freewheeling Diode
Avalanche rated
DC-DC converter
PFC, Low switching losses,
SiC
650, 1200, 1700 Zero Reverse Recovery Freewheeling Diode high power density and
Schottky
DC-DC converter high temperature operation
The graph below shows the relative recovery speed and forward voltage positions of 600V DL, D, DQ and DS series diodes.
11
SiC SChottky Diodes
SiC Schottky Diodes
IF (avg) VFvolts Diode Part Package Style
Volts Amps Typ 25 C Series Number
SINGLE
1700 10 1.5 SCE APT10SCE170B TO-247
10 1.5 SCD APT10SCD120B TO-247
10 1.5 SCD APT10SCD120K TO-220
1200
20 1.5 SCD APT20SCD120S D3
30 1.5 SCD APT30SCD120S D3
10 1.5 SCD APT10SCD65K TO-220
650 20 1.5 SCD APT20SCD65K TO-220
DUAL
1200 2 x 10 1.5 SCD APT10SCD120BCT TO-247
650 2 x 10 1.5 SCD APT10SCD65KCT TO-220

IF (avg) VF (volts) tRR(ns) QRR (nC) Diode Package
Typ 25 C Typ 25 C at I =125
Typ C Series
O
Volts Amps O O
I (avg)
Part Number Style
F F
SINGLE 15 2.8 21 960 DQ APT15DQ120BG TO-247

15 2.8 21 960 DQ APT15DQ120KG TO-220
15 2.0 32 1300 D APT15D120BG TO-247
15 2.0 32 1300 D APT15D120KG TO-220
TO-220[K]
30 2.8 24 1800 DQ APT30DQ120BG TO-247
1200 30 2.8 24 1800 DQ APT30DQ120KG TO-220
30 2.0 31 3450 D APT30D120BG TO-247
40 2.8 26 2200 DQ APT40DQ120BG TO-247
60 2.8 30 2800 DQ APT60DQ120BG TO-247
60 2.0 38 4000 D APT60D120BG TO-247 or D3
75 2.8 32 3340 DQ APT75DQ120BG TO-247
15 2.5 20 810 DQ APT15DQ100BG TO-247 D3 PAK[S]
15 2.5 20 810 DQ APT15DQ100KG TO-220 TO-268
15 1.9 28 1550 D APT15D100KG TO-220
30 2.5 22 1250 DQ APT30DQ100BG TO-247
1000 30 2.5 22 1250 DQ APT30DQ100KG TO-247
30 1.9 29 2350 D APT30D100BG TO-247
40 2.5 24 1430 DQ APT40DQ100BG TO-247
60 2.5 29 2325 DQ APT60DQ100BG TO-247
60 1.9 34 3600 D APT60D100BG TO-247 or D3 TO
-2
47
75 2.5 33 2660 DQ APT75DQ100BG TO-247
15 2.0 16 250 DQ APT15DQ60BG TO-247
15 2.0 16 250 DQ APT15DQ60KG TO-220
15 1.6 21 520 D APT15D60BG TO-247
15 1.6 21 520 D APT15D60KG TO-220 TO-247[B]
30 2.0 19 400 DQ APT30DQ60BG TO-247
600 30 2.0 19 400 DQ APT30DQ60KG TO-220
30 1.6 23 700 D APT30D60BG TO-247
40 2.0 22 480 DQ APT40DQ60BG TO-247
60 2.0 26 640 DQ APT60DQ60BG TO-247
60 1.6 40 920 D APT60D60BG TO-247 or D3
75 2.0 29 650 DQ APT75DQ60BG TO-247
100 1.25 45 3800 DL APT100DL60BG TO-247
30 1.3 22 360 D APT30D40BG TO-247
400
60 1.3 30 540 D APT60D40BG TO-247
30 1.1 21 150 D APT30D20BG TO-247 T-MAX[B2]
30 0.83 25 448 Schottky APT30S20BG TO-247 or D3
200 60 1.1 30 250 D APT60D20BG TO-247 Part Numbers for D3packages
60 0.83 35 490 Schottky APT60S20BG TO-247 or D3 or T/R - replace B with S in part
100 0.89 40 690 Schottky APT100S20BG TO-247 number

12
IF (avg) VF (volts) tRR(ns) QRR (nC) Diode Package
Typ
Typ 25 C Typ 25 C at I =125 C Series
O
Volts Amps O O
IF (avg)
Part Number Style
F

DUAL 2x27 2.0 31 3450 D APT2X30D120J
2x30 2.6 25 1800 DQ APT2X30DQ120J
2x53 2.0 38 4000 D APT2X60D120J
1200 2x60 2.5 30 2890 DQ APT2X60DQ120J
2x93 2.0 47 5350 D APT2X100D120J
2x100 2.4 45 5240 DQ APT2X100DQ120J
2x28 1.9 29 2350 D APT2X30D100J
2x55 1.9 34 3600 D APT2X60D100J ISOTOP[J] SOT-227
Antiparallel
1000 2x60 2.2 30 2350 DQ APT2X60DQ100J
Configuration
2x95 1.9 43 4050 D APT2X100D100J (ISOLATED BASE)
2x100 2.1 45 3645 DQ APT2X100DQ100J
2x30 1.8 20 400 DQ APT2X30DQ60J
2x30 1.6 23 700 D APT2X30D60J ISOTOP
2x60 1.7 27 650 DQ APT2X60DQ60J
600
2x60 1.6 40 920 D APT2X60D60J
2x100 1.6 30 980 DQ APT2X100DQ60J
2x100 1.6 34 1450 D APT2X100D60J Part Numbers for Parallel
Configuration replace 30, 60,
2x150 1.25 53 3800 DL APT2X150DL60J
or 100 with 31, 61, or 101.
2x30 1.3 22 360 D APT2X30D40J Except Schottky
2x60 1.3 30 540 D APT2X60D40J
400 Example: 2X30D120J
2x100 1.3 37 1050 D APT2X100D40J
becomes 2X31D120J
2x100 1.0 40 3550 DL APT2X101DL40J++
300 2x100 1.2 36 650 D APT2X101D30J
TO
2x30 0.80 25 448 Schottky APT2X31S20J -22
0
200 2x60 0.83 35 490 Schottky APT2X61S20J TO-220[KCT]

2x100 1.1 39 840 D APT2X100D20J *Common Cathode
2x100 0.89 40 690 Schottky APT2X101S20J
TO
-
1200 2x30 2.8 26 2100 DQ APT30DQ120BCTG TO-247 [BCT] 24
7
2x15 2.5 20 810 DQ APT15DQ100BCTG TO-247 [BCT] TO-247[BCA]

2x15 1.9 28 1550 D APT15D100BCTG TO-247 [BHB] *Common Anode
2x30 1.9 29 2360 D APT30D100BCTG TO-247 [BHB]
1000 2x30 1.9 30 2350 D APT30D100BHBG TO-247 [BCA]
2x60 2.5 29 2325 DQ APT60DQ100LCTG TO-264 [LCT]
2x60 1.9 35 3600 D APT60D100LCTG TO-264 [LCT] TO-247[BCT]
2x15 1.6 21 520 D APT15D60BCTG TO-247 *Common Cathode
2x15 2.0 15 250 DQ APT15DQ60BCTG TO-247 [BCT]
2x15 1.6 20 520 D APT15D60BCAG TO-247 [BCA]
2x30 2.0 22 480 DQ APT30DQ60BHBG TO-247 [BHB] TO
- 24
7
TO-247[BHB]
600 2x30 1.6 23 700 D APT30D60BCTG TO-247 [BCT] *Half Bridge
2x30 1.6 25 700 D APT30D60BHBG TO-247 [BHB]
T-M
2x60 2.0 26 640 DQ APT60DQ60BCTG TO-247 [BCT] ax
2x60 1.6 30 920 D APT60D60LCTG TO-264 [LCT]

T-MAX [B2CT]
2x30 1.3 22 360 D APT30D40BCTG TO-247 [BCT] *Common Cathode
400
2x60 1.3 30 540 D APT60D40LCTG TO-264 [LCT]
300 2x30 1.2 25 1300 D APT30D30BCTG TO-247 [BCT]
TO
2x30 1.1 21 150 D APT30D20BCTG TO-247 [KCT] - 26
4
2x30 0.80 25 448 Schottky APT30S20BCTG TO-247 [BCT] TO-264[LCT]
200 2x60 0.83 35 490 Schottky APT60S20B2CTG T-MAX [B2CT] *Common Cathode
2x100 0.89 40 690 Schottky APT100S20LCTG TO-264[LCT]
Tandem, DS Diodes for PFC Boost Applications

Part Numbers for D3
600 15 3.2 13 85 DS APT15DS60BG TO-247 packages - replace B
30 3.2 17 180 DS APT30DS60BG TO-247 with S in part number
(2, 300V Diodes Connected In Series)
*Current ratings per leg ++ Parallel Form Only Datasheets available on www.microsemi.com All Products RoHS Compliant
13
High Voltage RF MOSFETs
The ARF family of RF Power MOSFETs are optimized for applications requiring frequencies as high as 150MHz and operating voltages as
high as 400V. Historically, RF Power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining
Microsemi's high voltage MOSFET technology with RF specific die geometries.
Why Higher Voltage? Higher VDD means higher load impedance. For 150W output from a 50V supply, the load impedance is only 8 ohms.
At 125V, the load impedance is 50 ohms. The higher impedance allows simpler transformers and combiners. Paralleled devices can still oper-
ate into reasonable and convenient impedances. The increased operating voltage also lowers the DC current required for any given power
output, increasing efficiency and reducing the size, weight and cost of other system components. High breakdown voltage is a necessity in
high efficiency switchmode amplifiers such as class C-E, which can see peak drain voltages of over 4X the applied VDD.
Part Pout Freq. VDD/BVDSS Rthjc Package Class of

Number (W) (MHz) (V) (OC/W) Style Operation
ARF449AG/BG 90 120 150/450 0.76 TO-247 A-E
ARF463AG/BG 100 100 125/500 0.70 TO-247 A-E
M113 / M174 / M177 M208 T14
ARF463AP1G/BP1G 100 100 125/500 0.70 TO-247 A-E
ARF446G/ARF447G 140 65 250/900 0.55 TO-247 A-E
ARF521 150 150 165/500 0.60 M174 A-E
ARF460AG/BG 150 65 125/500 0.50 TO-247 A-E
ARF461AG/BG 150 65 250/1000 0.50 TO-247 A-E
TO-247 TO-264
ARF465AG/BG 150 60 300/1200 0.50 TO-247 A-E
ARF468AG/BG 270 45 165/500 0.38 TO-264 A-E
ARF475FL 300 150 165/500 0.31 T3A A-E S D S
ARF476FL 300 150 165/500 0.31 T3 A-E

ARF466AG/BG 300 45 200/1000 0.35 TO-264 A-E
ARF466FL 300 45 200/1000 0.13 T3A A-E S G S
ARF469AG/BG 300 45 165/500 0.35 TO-264 A-E T1 T2 T2B

ARF477FL 400 65 165/500 0.18 T3A A-E
ARF1500 750 40 125/500 0.12 T1 A-E
ARF1501 750 40 250/1000 0.12 T1 A-E
ARF1510 750 40 700/1000 0.12 T1 D
T3 T3A T4
ARF1511 750 40 380/500 0.12 T1 D
ARF1519 750 25 250/1000 0.13 T2 A-E
Part Pout Freq. Gain Eff. Typ VDD/BVDSS Rthjc Package

High Frequency RF MOSFETs Number (W) (MHz) typ (%) (V) (OC/W) Style
(dB)
The VRF family of RF MOSFETs are improved replacements for
industry standard RF transistors. They provide improved rugged- VRF148A 30 175 16 50 65/170 1.52 M113
ness by increasing the BVDSS over 30% from the industry standard VRF141 150 175 13 45 28/80 0.60 M174
of 125 volts to 170V minimum. Low cost flangeless packages VRF151 150 175 14 50 65/170 0.60 M174
are another improvement that show Microsemi's dedication to VRF152 150 175 14 50 50/140 0.60 M174
optimizing performance, reducing cost and improving reliability. VRF191 150 175 14 50 100/250 0.60 M174
We will continue to offer a greater number of product offerings VRF150 150 150 11 50 65/170 0.60 M174
in the new reduced-cost flangeless packages. VRF161 200 175 25 50 65/170 0.50 M177
VRF151G 300 175 16 55 65/170 0.30 M208
VRF2933 300 150 25 50 65/170 0.27 M177
VRF2933FL 300 150 25 50 65/170 0.27 T14
VRF3933 300 150 28 60 100/250 0.27 M177
VRF3933FL 300 150 28 60 100/250 0.27 T14
VRF2944 400 150 25 50 65/170 0.22 M177
VRF2944FL 400 150 25 50 65/170 0.22 T14
VRF154FL 600 30 17 45 65/170 0.13 T2
VRF157FL 600 30 21 45 65/170 0.13 T2
VRF164FL 600 30 21 45 65/170 0.10 T2

14
Drivers and Driver-RF MOSFET Hybrids
The DRF1200/01/02/03 Hybrids integrate Driver, bypass capacitors and RF MOSFETS into a single package. Integration
maximizes amplifier performance by minimizing transmission line parasitics between the Driver and MOSFET. The DRF1300 or DRF1301
has two independent channels, each containing a Driver and RF MOSFET in a push pull configuration. The DRF1400A and B are half
bridge hybrids with symmetrically orientated leads so that the two can easily be configured into a full bridge converter. All DRF parts
feature a proprietary Anti-ring function to eliminate cross conduction in a Bridge or push-pull topologies. All DRF parts can be externally
selected in either an inverting or non-inverting configuration.
Part Number Pout Freq. VDD/BVDSS Rthjc Package Class of

(W) (MHz) (V) (OC/W) Style Operation
DRF1200 400 30 15/1000 0.10 T2B D-E
DRF1201 600 30 15/1000 0.13 T2B D-E
DRF1300 1000 30 15/500 0.06 T4 D-E
DRF1301 1000 30 15/1000 0.06 T4 D-E
DRF1400 1000 30 15/500 0.06 T4 D-E
Reference Design Kits

DRF1200/CLASS-E, 13.56 MHz
DRF1200/CLASS-E, 27.12 MHz
The DRF1200/Class-E Single Ended RF Generator is a

reference design providing the designer the ability to
evaluate an 85% efficient 1000W Class-E RF Generator
DRF1300/CLASS-D, 13.56 MHz
The DRF1300/Class-D Push Pull RF Generator is a

reference design providing the designer the ability to
evaluate an 80% efficient 2000W Class-D RF Generator
DRF1400/Class-D, 13.56 MHz
The DRF1400/Class-D Half Bridge RF

Generator is a reference design providing
the designer the ability to evaluate an 85%
efficient 2500W Class- D RF Generator
All kits include: A fully populated board attached to an aluminum heat sink. An extensive application note explaining the theory of
operation with designer's recommendations for evaluation and board layout. All key waveforms are illustrated and described. A complete
parts list with recommended vendor part numbers and the board's Gerber file are provided for an easy transition into an end application.
Datasheets available on www.microsemi.com All Products RoHS Compliant EXCLUDING Reference Design Kits
15
Power Modules Contents
IGBT Power Modules
POWER MODULE INFORMATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17-21
BOOST and BUCK CHOPPER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-23
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-23
3 PHASE BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
PHASE LEG for welding application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
TRIPLE DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
INTERLEAVED PFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
FULL & ASYMMETRICAL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SINGLE SWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.
SINGLE SWITCH + SERIES DIODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Intelligent Power Modules
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
MOSFET Power Modules
BOOST and BUCK CHOPPER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
FULL BRIDGE + SERIES AND PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
ASYMMETRICAL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
PHASE LEG + SERIES AND PARALLEL DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
PHASE LEG + SERIES DIODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
TRIPLE DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30. Microsemi combines a formidable array of technologies in semiconductors, packag-
SINGLE SWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 ing and automated manufacturing to produce a wide range of high quality modules
SINGLE SWITCH + SERIES DIODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 optimized for:
SINGLE SWITCH + SERIES AND PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . . . . . . 30
INTERLEAVED PFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Reliability
SINGLE AND DUAL LINEAR MOSFET. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Efficiency and electrical performance
Low cost
RENEWABLE ENERGY Power Modules
Space savings
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.
Reduced assembly time
PFC + BYPASS DIODE + PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

PFC + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.
The readily available standard module product line spans a wide selection of circuit
PFC + BYPASS DIODE + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
topologies, semiconductors including Silicon Carbide, voltage and current ratings
SECONDARY FAST RECTIFIER + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.
and packages. If you need even more flexibility or intellectual property protection,
BOOST BUCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Microsemi can often customize a standard module with low set up cost and with
3- LEVEL NPC INVERTER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
a short lead time. Unique requirements can be met with Application Specific Power
T-TYPE 3-LEVEL INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Modules (ASPM).
SiC Diode Power Modules
DUAL DIODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Microsemi serves a broad spectrum of industrial applications for Welding, Solar,
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Induction Heating, Medical, UPS, Motor Control and SMPS markets as well as
HI-REL applications for Semicap, Defense and Aerospace markets. A wide selection
IGBT + SiC Diode Power Modules
of construction materials enables Microsemi to manufacture with short lead times
BOOST CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
modules that feature:
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

MOSFET + SiC Diode Power Modules Extended temperature range: -60C to +200C
SINGLE SWITCH + SERIES FRED AND SiC PARALLEL DIODES. . . . . . . . . . . . . . . . . . 34 High reliability
CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Reduced size and weight
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Hi-Rel testing and screening options
PHASE LEG + SERIES FRED AND SiC PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . . 34
FULL BRIDGE + SERIES FRED AND SiC PARALLEL DIODES . . . . . . . . . . . . . . . . . . . . 34 Microsemi's experience and expertise in power electronic conversion brings the
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 most effective technical support for your new development.

SiC MOSFET Power Modules
Isolated gate driver
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Snubbers
T-TYPE 3-LEVEL INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Mix & match semiconductors
3-LEVEL NPC INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Short circuit protection
BOOST CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Temperature & current sensing
Diode Power Modules Parameter binning
SINGLE DIODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
SINGLE DIODE - NON ISOLATED PACKAGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3-PHASE BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36.
3-PHASE BRIDGE + THYRISTOR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
THYRISTOR & DIODE DOUBLER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
COMMON CATHODE - COMMON ANODE - DOUBLER. . . . . . . . . . . . . . . . . . . . . . . 38
Package Outlines Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40-43
16
Standard Electrical Configurations
Microsemi offers a wide range of standard electrical configurations housed in a variety of packages to match your specific need for
high power density and performance. Various semiconductor types are offered in the same topology.
IGBT MOSFET Diode Mix Si-SiC Full SiC

Electrical Topology
600V to 1700V 75V to 1200V 30V to 1700V 600 & 1200V 600 & 1200V
Asymmetrical Bridge X X
Boost Buck X X
Boost & Buck Chopper X X X X
Common Anode X
Common Cathode X
Dual Boost & Buck Chopper X X X
Dual Common Source X X
Dual Diode X
Full Bridge X X X X
Full Bridge + PFC X X X

Full Bridge + Secondary Fast Rectifier Bridge X X X
Full Bridge + Series and Parallel Diodes X X
Interleaved PFC X X
Linear single and Dual switch X
Phase Leg X X X X
Phase Leg Intelligent X
Phase Leg + PFC X X
Phase Leg + Series and Parallel Diodes X X
Single Switch X X X
Single Switch + Series and Parallel Diodes X X
Single Switch + Series Diodes X X
3-Level NPC Inverter X X

3-Level T-Type Inverter X X
3-Phase Bridge X X
Triple Dual Common Source X X
Triple Phase Leg X X X
NPT MOSFET Schottky IGBT Diode

Trench3 FREDFET FRED MOSFET MOSFET
Trench4 CoolMOS Std Rectifier Diode
Trench4 Fast Thyristor
17
Packaging
Improved Low Profile Packages

SP1 (12mm)
SP3 (12mm)
SP4 (17mm)
SP6 (17mm)
SP6-P (12mm) SP1 SP3F SP3 SP4 SP6 SP6-P
Industry Standard Packages

SOT-227 (Isotop)
SP2 (17mm)
34mm & 62mm Types
D1 (34 mm Wide) SOT-227 SP2 D1 D3 D4
D3 (62 mm Wide)
D4 (62 mm Wide)

SD1 SD2 SM1 SM2 SM2-1 SM3 SM3-1 SM4 SM5 SF1
Mini-Mod
Surface Mount Mini-Mod TO-249 9-pin TO-249 Twin Tower VJ Half Pack
Package Advantages
SP6 - SP
APTmodule
MODULE 12 mm
ISOTOP
30 mm 17 mm
SP1 package: SP3F package: SP6 package: SP6-P package:
-Replaces 2 SOT-227 parts -Replaces up to 4 SOT-227 parts Offers the same footprint and the same -Replaces up to 6 SOT-227 parts
-Improved assembly time and cost -Reduced assembly time and cost pinout location as the popular 62mm -Height compatible with SOT-227
-Height compatible with SOT-227 -Height compatible with SOT-227 package but with lower height, leading to: -Low inductance solder pins
-Copper base plate - Reduced stray inductance -High current capability
-Copper base plate
- Reduced parasitic resistance
- Higher efficiency at high frequency
18
Custom Power Modules
Microsemi PMP has created the Application Specific Power Module (ASPM) concept and has been offering customized power modules since 1983. Microsemi PMP offers a
complete engineered solution with mix and match capabilities in term of package, configuration, performance and cost.
Internal Printed Circuit Board Package

Not available in all modules. Standard or Custom
Used to route gate signals tracks to small Ensure environmental protection and
signal terminals mechanical robustness
Used to mount gate circuit and protection in
case of intelligent power module
Power Semiconductor Die

IGBT, MOSFET, Diode, SiC, Thyristor,
Terminals
Switching devices soldered to the
Screw on or Solder pins
substrates and connected by ultrasonic
Provides the user with power and signal
Al wire bonds
connections with minimum parasitic
resistance and inductance
Substrates Base Plate

Al2O3, AlN, Si3N4 Improve the heat transfer to the heat sink
Provide isolation and good heat Copper for good thermal transfer
transfer to the base plate AlSiC, CuW, CuMoCu for improved
reliability
3 levels of customization are proposed offering different cost and low volume entry:
Change Options: Die Substrate Base plate Plastic lid Terminals NRE level MOQ
Elect./thermal performance Die P/N Material Material - - None to low
Elect./thermal performance
Die P/N Material & Layout Material - - Low to medium
+ electrical configuration 5 to 10
pieces
Elect./thermal performance
+ electrical configuration Die P/N Material & Layout Material & Shape Material & Shape Shape Medium to high
+ module housing
Microsemi PMP power modules are made of different sub-elements. Most of them are standard and can be re-used to build infinite solutions for the end user.
Microsemi PMP offers optimum development cost and cycle time thanks to long term experience and wide range of available technologies.
Power Modules Features Customer Benefits

High Power Density Size and cost reduction
Isolated and highly thermally conductive substrate Excellent thermal management
Internal wiring Reduced external hardware
Minimum parasitics Improved performance
Minimum output terminals Reduced assembly time
Mix & match components Optimizes losses
Full engineered solutions Easy upgrade/less parts counts/ short time to market/IP protection
FLEXIBILITY PACKAGING CAPABILITY

Great level of integration Standard and custom packages
Mix of Silicon within the same package Standard and custom terminals
No quantity limitation Various substrate technologies
TECHNOLOGY RELIABILITY
Application oriented Coefficient of thermal expansion matching
APPLICATIONS
Solar - Welding - Plasma Cutting - Semicap - MRI & X-Ray - EV/HEV - Induction Heating - UPS - Motor control - Data Communication
19
Rugged Custom Power Modules
Microsemi PMP has acquired a great experience and Various solutions are proposed offering different cost and low volume of entry:
know-how in module customization to address rugged
and wide temperature range application and offers Extended Harsh
Industrial
solution to meet with next generation integrated Temperature Environment
Application
power systems expectation in terms of: Application Application
No NRE
Improved Reliability Standard Module X
Low Volume Entry
Wider Operating Temperatures
Higher Power Low NRE
Modified Standard X X
Low Volume Entry
Higher Efficiency
Lower Weight and Size Medium to High NRE
Custom Module X X X
Lower Cost Low Volume Entry
Applications
Avionics actuation system
DBC Solder Dice
Avionics lift and pump Substrate Joint
Military ground vehicle Solder
Joint
power supply and motor control Module performance and
Navy ship auxiliary power supply Base reliability depends on the choice
Plate
Down hole drilling of the assembly materials
CTE Thermal Rthjc More closely matched materials TCEs increase the
Test Capabilities (ppm/K) conductivity (K/W)
X-Ray inspection (W/m.K) module life time because it will result in much less
Dielectric test (up to 6KV) stress at the interface of the materials and inside the
Electrical testing at specified temperature Silicon Die (120 mm2) 4 136 materials.
Burn-in Cu/Al2O3 17/7 390/25 0.35
Acoustic imaging The higher the thermal conductivity, the lower is the
AlSiC/Al2O3 7/7 170/25 0.38
junction to case thermal resistance and the lower
Cu/AlN 17/5 390/170 0.28
Reliability Testing Capabilities will be the delta of junction temperature of the
AlSiC/AlN 7/5 170/170 0.31 device during operation such that the effect of power
Power cycling
AlSiC/Si3N4 7/3 170/60 0.31 cycling on the dice will be minimized.
Hermetic sealing
Moisture
Salt atmosphere Material CTE Thermal Density
Another important feature is the material density
HTGB (ppm/K) conductivity (g/cc) particularly for the baseplate. Taking copper as the
Temperature shock (W/m.K) reference, AlSiC has a density of 1/3 while CuW
HAST has twice the density. Therefore AlSiC will provide
CuW 6.5 190 17 substantial weight reduction at the same time as
H3TRB Base plate AlSiC 7 170 2.9
Altitude Cu 17 390 8.9 reliability increase.
Mechanical shock, vibration
Al2O3 7 25 -
Substrate AlN 5 170 -
Expertise Capabilities
Si3N4 3 60 -
Cross-sectioning
Structural analysis Die Si 4 136 -
SiC 2.6 270 -
All tests can be conducted upon demand by sampling or
at 100%. Tests performed in house or with external lab.
Our Core Competencies

Extensive experience of rugged solutions for
harsh environments
Wide range of Silicon technologies
Wafer fab capabilities
Mix of assembly technologies
Hermetic and robust plastic packages
Custom test & burn-in solutions
ISO9001 certified
End-of-life (obsolescence) management
Thermal management
Material expertise
Product life management associated to risks
analysis
20
Power Module Part Numbering System
IGBT Modules MOSFET Modules Diode Modules
APT GL 475 A 120 T D3 G APT C 60 DA M24 T 1 G APT DR 90 X 160 1 G
I II III IV V VI VII VIII I II III IV V VI VII VIII I II III IV V VI VII
I Trade Mark I Trade Mark I Trade Mark

IGBT Type: MOSFET Type: Diode Type:
GF = NPT or NPT FAST MC = MOSFET SiC DF = FRED
II
GFQ = NPT ULTRA FAST M = MOSFET II DR = Standard Rectifier
II GL = TRENCH 4 C = CoolMOS DC = SiC
GT = TRENCH 3 DSK = Schottky
GV = Mix NPT/TRENCH Blocking Voltage:
CV = Mix TRENCH/CoolMOS 08 = 75V 80 = 800V Current:
10 = 100V 90 = 900V III IF @ Tc=80C
III
Current: 20 = 200V 100 = 100V
III
Ic @ Tc=80C 50 = 500V 120 = 120V Topology:
60 = 600V AA = Dual Common Anode
Topology: BB = Boost Buck
A = Phase Leg Topology: AK = Dual Series
BB = Boost Buck A = Phase Leg IV KK = Dual Common Cathode
DA = Boost Chopper BB = Boost Buck H = Single Phase Bridge
DDA = Double Boost Chopper DA = Boost Chopper U = Single Switch
DH = Asymmetrical Bridge DDA = Double Boost Chopper X = Three Phase Bridge
DSK = Double Buck Chopper DH = Asymmetrical Bridge
DU = Dual Common Source DSK = Double Buck Chopper Blocking Voltage:
H = Full Bridge DU = Dual Common Source 20 = 200V
IV
HR = T-Type 3-Level IV H = Full Bridge 40 = 400V
SDA = Double Boost + Bypass Diode HR = T-Type 3-Level V 60 = 600V
SK = Buck Chopper SDA = Double Boost + Bypass Diode 100 = 1000V
TA = Triple Phase Leg SK = Buck Chopper 120 = 1200V
TDU = Triple Dual Common Source TA = Triple Phase Leg 160 = 1600V
TL = Three Level TDU = Triple Dual Common Source 170 = 1700V
U = Single Switch TL = Three Level NPC
VDA = Interleaved PFC U = Single Switch Package:
X = Three Phase Bridge VDA = Interleaved PFC VI 1 = SP1
3 = SP3
Blocking Voltage: RDSON @ Tc=25C
60 = 600V 240 = 2400m VII G = RoHS Compliant
V V
120 = 1200V 24 = 240m
170 = 1700V M24 = 24m

Option: Option:
A = AIN Substrate A = AlN Substrate
C = SiC Diode C = SiC Diode
VI
D = Series Diode D = Series Diode
VI
T = Temperature Sensor F = FREDFET
W = Clamping Parallel Diode S = Series and Parallel Diodes
T = Temperature Sensor
Package: U = Ultrafast FREDFET
1 = SP1
2 = SP2 Package:
3 = SP3 1 = SP1
VII
P = SP6-P VII 2 = SP2
D1 = D1 (34mm) 3 = SP3
D3 = D3 (62mm) P = SP6-P
D4 = D4 (62mm)
VIII G = RoHS Compliant
VIII G = RoHS Compliant
Optional Materials
Optional materials are available upon demand on most of the A AIN Substrate for higher thermal conductivity
listed standard power modules. Options are indicated with a M AlSiC Base plate material for improved temperature cycling capabilities
letter in the suffix of the module part number. Temperature
T Temperature Sensor (NTC or PTC) for Case Temperature information
C SiC Diode for higher efficiency
Sensor Option is indicated in the catalog with "YES" or N Si3N4 Substrate
"option" when available on standard part or on demand. E Press fit terminals (for SP3 package only)
21
IGBT Power Modules
CHOPPER AND PHASE LEG
VCES IGBT IC (A) VCE (on)(V)

(V) Type TC=80 C at rated Ic
Package NTC SOT-227
DA... or ...U2 ...SK... or ...U3 A...

250 2.1 D3 option APTGF250DA60D3G APTGF250SK60D3G APTGF250A60D3G
NPT
30 2.1 SOT227 - APT30GF60JU2 APT30GF60JU3 N/A
30 2.1 SP1 YES N/A N/A APTGF30A60T1G
50 2.1 SOT227 - APT50GF60JU2 APT50GF60JU3 N/A SP1
90 2.1 SP1 YES APTGF90DA60T1G APTGF90SK60T1G APTGF90A60T1G
NPT FAST
150 2.1 SP3 YES N/A N/A APTGF150A60T3AG
165 2.1 D1 - APTGF165DA60D1G APTGF165SK60D1G APTGF165A60D1G
180 2.1 SP4 YES APTGF180DA60TG APTGF180SK60TG APTGF180A60TG
350 2.1 SP6 option APTGF350DA60G APTGF350SK60G APTGF350A60G
600 75 1.5 SP1 YES APTGT75DA60T1G APTGT75SK60T1G APTGT75A60T1G
100 1.5 SP1 YES APTGT100DA60T1G APTGT100SK60T1G APTGT100A60T1G
100 1.5 SP2 - N/A N/A APTGT100A602G SP2
150 1.5 SP3 YES N/A N/A APTGT150A60T3AG
200 1.5 SP2 - N/A N/A APTGT200A602G
TRENCH3 200 1.5 SP3 YES APTGT200DA60T3AG APTGT200SK60T3AG APTGT200A60T3AG
300 1.5 SP4 YES N/A N/A APTGT300A60TG
300 1.5 SP6 option APTGT300DA60G APTGT300SK60G APTGT300A60G
300 1.5 D3 option APTGT300DA60D3G APTGT300SK60D3G APTGT300A60D3G
400 1.5 D3 option APTGT400DA60D3G APTGT400SK60D3G APTGT400A60D3G SP3
100 1.85 SP1 YES N/A N/A APTGLQ100A65T1G
650 TRENCH 4 FAST
15 3.2 SP1 YES N/A N/A APTGF15A120T1G
50 3.2 SP1 YES APTGF50DA120T1G APTGF50SK120T1G APTGF50A120T1G
75 3.2 SP1 YES APTGF75DA120T1G N/A N/A
100 3.2 SP1 YES APTGF100DA120T1G N/A N/A SP4
100 3.2 SP2 - N/A N/A APTGF100A1202G
NPT FAST
200 3.2 D3 option N/A N/A APTGF200A120D3G
1200
300 3.2 SP6 option APTGF300DA120G APTGF300SK120G APTGF300A120G
35 1.7 SP1 YES N/A N/A APTGT35A120T1G
35 1.7 SOT227 - APT35GT120JU2 APT35GT120JU3 N/A
TRENCH 3
50 1.7 SP1 YES N/A N/A APTGT50A120T1G SP6
50 1.7 SP2 - N/A N/A APTGT50A1202G
50 1.7 SP4 YES APTGT50DA120TG APTGT50SK120TG N/A
75 1.7 SP1 YES N/A N/A APTGT75A120T1G
continued next page
D1
D3
All Power Modules RoHS Compliant

22
IGBT Power Modules
CHOPPER AND PHASE LEG CONT.

Package NTC SOT-227
DA... or ...U2 ...SK... or ...U3 A...

75 1.7 SP2 - N/A N/A APTGT75A1202G
75 1.7 SP4 YES APTGT75DA120TG APTGT75SK120TG N/A
100 1.7 SP1 YES APTGT100DA120T1G N/A N/A
100 1.7 D1 - N/A N/A APTGT100A120D1G SP1
100 1.7 SP2 - N/A N/A APTGT100A1202G
TRENCH 3
150 1.7 D1 - APTGT150DA120D1G APTGT150SK120D1G APTGT150A120D1G
1200 200 1.7 D3 option APTGT200DA120D3G APTGT200SK120D3G APTGT200A120D3G
300 1.7 D3 option APTGT300DA120D3G APTGT300SK120D3G APTGT300A120D3G SP3
400 1.7 D3 option N/A N/A APTGT400A120D3G
40 1.85 SOT227 - APT40GL120JU2 APT40GL120JU3 N/A
90 1.85 SP1 YES APTGL90DA120T1G APTGL90SK120T1G APTGL90A120T1G
180 1.85 SP2 - N/A N/A APTGL180A1202G
TRENCH 4 180 1.85 SP3 YES N/A N/A APTGL180A120T3AG
325 1.85 D3 option APTGL325DA120D3G APTGL325SK120D3G APTGL325A120D3G
475 1.85 D3 option APTGL475DA120D3G APTGL475SK120D3G APTGL475A120D3G
700 1.85 D3 option APTGL700DA120D3G APTGL700SK120D3G N/A
100 2.05 SP3 YES N/A N/A APTGLQ100A120T3AG SP4
TRENCH 4 FAST
50 2.0 SP4 YES APTGT50DA170TG APTGT50SK170TG APTGT50A170TG
75 2.0 SP1 YES APTGT75DA170T1G N/A N/A
75 2.0 D1 - APTGT75DA170D1G APTGT75SK170D1G APTGT75A170D1G
1700 TRENCH 3 100 2.0 SP4 YES APTGT100DA170TG APTGT100SK170TG APTGT100A170TG
SP6
3 PHASE BRIDGE
Package NTC Part Number
NPT FAST
30 2.1 SP3 YES APTGF30X60T3G D1
50 2.1 SP3 YES APTGF50X60T3G
600 30 1.5 SP3 YES APTGT30X60T3G
TRENCH 3 50 1.5 SP3 YES APTGT50X60T3G
75 1.5 SP3 YES APTGT75X60T3G
NPT FAST
1200 25 1.7 SP3 YES APTGT25X120T3G
TRENCH 3
35 1.7 SP3 YES APTGT35X120T3G
TRENCH 4 40 1.85 SP3 YES APTGL40X120T3G
D3

23
IGBT Power Modules
PHASE LEG FOR WELDING APPLICATION

100 3.2 SP3 YES APTGF100A120T3WG
1200 NPT FAST
150 3.2 SP3 YES APTGF150A120T3WG
SP3
TRIPLE PHASE LEG
NPT FAST 90 2.1 SP6-P option APTGF90TA60PG
50 1.5 SP6-P option APTGT50TA60PG
600
TRENCH 3 75 1.5 SP6-P option APTGT75TA60PG
NPT FAST 50 3.2 SP6-P option APTGF50TA120PG
SP4
1200 TRENCH 3
100 1.7 SP6-P YES APTGT100TA120TPG
TRENCH 4 120 1.85 SP6-P YES APTGL120TA120TPG
TRIPLE DUAL COMMON SOURCE

50 1.5 SP6-P option APTGT50TDU60PG
75 1.5 SP6-P option APTGT75TDU60PG SP6-P
600 TRENCH 3
NPT FAST 50 3.2 SP6-P option APTGF50TDU120PG
1200 TRENCH 3 75 1.7 SP6-P option APTGT75TDU120PG
TRENCH 4 120 1.85 SP6-P YES APTGL120TDU120TPG
1700 TRENCH 3 50 2.0 SP6-P option APTGT50TDU170PG
INTERLEAVED PFC
600 50 2.1 SP3 YES APTGF50VDA60T3G
NPT FAST
1200 50 3.2 SP3 YES APTGF50VDA120T3G
DUAL CHOPPER

Package NTC
...DDA... ...DSK...
NPT FAST 50 2.1 SP3 YES APTGF50DDA60T3G APTGF50DSK60T3G
600 50 1.5 SP3 YES APTGT50DDA60T3G APTGT50DSK60T3G
TRENCH 3
75 1.5 SP3 YES APTGT75DDA60T3G APTGT75DSK60T3G
25 3.2 SP3 YES APTGF25DDA120T3G APTGF25DSK120T3G
NPT FAST 50 3.2 SP3 YES APTGF50DDA120T3G APTGF50DSK120T3G
75 3.2 SP4 YES APTGF75DDA120TG APTGF75DSK120TG
1200
TRENCH 3 50 1.7 SP3 YES APTGT50DDA120T3G APTGT50DSK120T3G
60 1.85 SP3 YES APTGL60DDA120T3G APTGL60DSK120T3G
TRENCH 4
90 1.85 SP3 YES APTGL90DDA120T3G APTGL90DSK120T3G

24
IGBT Power Modules
FULL & ASYMMETRICAL BRIDGE

Package NTC
...H... ...DH...
30 2.1 SP1 YES APTGF30H60T1G N/A
50 2.1 SP1 YES APTGF50H60T1G APTGF50DH60T1G
NPT FAST
50 2.1 SP3 YES APTGF50H60T3G N/A SP1
90 2.1 SP3 YES APTGF90H60T3G APTGF90DH60T3G
180 2.1 SP6 - APTGF180H60G APTGF180DH60G
20 1.5 SP1 YES APTGT20H60T1G N/A
50 1.5 SP1 YES APTGT50H60T1G APTGT50DH60T1G
600 50 1.5 SP2 YES APTGT50H60T2G N/A
TRENCH 3 75 1.5 SP2 YES APTGT75H60T2G N/A
75 1.5 SP3 YES APTGT75H60T3G N/A SP2
100 1.5 SP4 YES APTGT100H60TG APTGT100DH60TG
200 1.5 SP6 - APTGT200H60G APTGT200DH60G
TRENCH 4 75 1.85 SP1 YES APTGLQ75H65T1G N/A
650
FAST 300 1.85 SP6 option APTGLQ300H65G N/A
NPT
25 2.1 SP2 YES APTGFQ25H120T2G N/A
ULTRA FAST
15 3.2 SP1 YES APTGF15H120T1G N/A SP3
NPT FAST
50 3.2 SP3 YES N/A APTGF50DH120T3G
50 3.2 SP4 YES APTGF50H120TG APTGF50DH120TG
75 3.2 SP4 YES APTGF75H120TG APTGF75DH120TG
150 3.2 SP6 - APTGF150H120G APTGF150DH120G
50 1.7 SP3 YES N/A APTGT50DH120T3G
1200
75 1.7 SP3 YES N/A APTGT75DH120T3G
SP4
TRENCH 3
100 1.7 SP4 YES N/A APTGT100DH120TG
100 1.7 SP6 - APTGT100H120G N/A
40 1.85 SP1 YES APTGL40H120T1G N/A
TRENCH 4 60 1.85 SP3 YES APTGL60H120T3G APTGL60DH120T3G
90 1.85 SP3 YES APTGL90H120T3G APTGL90DH120T3G
40 2.05 SP1 YES APTGLQ40H120T1G N/A
TRENCH 4
75 2.05 SP3 YES APTGLQ75H120T3G N/A
FAST
200 2.05 SP6 option APTGLQ200H120G N/A
1700 TRENCH 3
50 2.0 SP4 YES APTGT50H170TG APTGT50DH170TG SP6 Full Bridge

25
IGBT Power Modules
SINGLE SWITCH
360 2.1 D4 - APTGF360U60D4G
NPT FAST 500 2.1 D4 - APTGF500U60D4G
600
660 2.1 D4 - APTGF660U60D4G
TRENCH 3 750 1.5 D4 - APTGT750U60D4G
NPT FAST 530 3.2 D4 - APTGF530U120D4G
400 1.7 D4 - APTGT400U120D4G
TRENCH 3
1200 600 1.7 D4 - APTGT600U120D4G
475 1.85 D4 - APTGL475U120D4G
TRENCH 4
700 1.85 D4 - APTGL700U120D4G
400 2.0 D4 - APTGT400U170D4G D4
1700 TRENCH 3
600 2.0 D4 - APTGT600U170D4G
SINGLE SWITCH + SERIES DIODE

200 3.2 SP6 - APTGF200U120DG
NPT FAST
1200 300 3.2 SP6 - APTGF300U120DG
TRENCH 4 475 1.85 SP6 - APTGL475U120DAG
DUAL COMMON SOURCE SP4

90 2.1 SP4 YES APTGF90DU60TG
NPT FAST 180 2.1 SP4 YES APTGF180DU60TG
350 2.1 SP6 - APTGF350DU60G
600 100 1.5 SP4 YES APTGT100DU60TG
200 1.5 SP4 YES APTGT200DU60TG
TRENCH 3
300 1.4 SP6 - APTGT300DU60G
600 1.4 SP6 - APTGT600DU60G
100 3.2 SP4 YES APTGF100DU120TG
NPT FAST 150 3.2 SP4 YES APTGF150DU120TG
300 3.2 SP6 - APTGF300DU120G
1200 100 1.7 SP4 YES APTGT100DU120TG
150 1.7 SP6 - APTGT150DU120G
TRENCH 3
150 1.7 SP4 YES APTGT150DU120TG SP6
200 1.7 SP6 - APTGT200DU120G
300 1.7 SP6 - APTGT300DU120G
400 1.7 SP6 - APTGT400DU120G
1700 TRENCH 3 225 2.0 SP6 - APTGT225DU170G
300 2.0 SP6 - APTGT300DU170G
Intelligent Power Modules
Phase leg
NPT FAST 350 2.1 LP8 - APTLGF350A608G
600
TRENCH 3 400 1.5 LP8 - APTLGT400A608G
NPT FAST 300 3.2 LP8 - APTLGF300A1208G
1200 TRENCH 3 300 1.7 LP8 - APTLGT300A1208G
TRENCH 4 325 1.8 LP8 - APTLGL325A1208G LP8
26
CHOPPER
VDSS MOSFET RDS (ON) ID (A)

Package NTC
(V) Type (m) TC=80 C
SOT-227
DA...or...U2 SK...or...U3
11 100 SOT-227 - APT10M11JVRU2 APT10M11JVRU3
100 MOS 5 4.5 207 SP4 YES APTM10DAM05TG APTM10SKM05TG
2.25 370 SP6 - APTM10DAM02G APTM10SKM02G
MOS 5 22 71 SOT-227 - APT20M22JVRU2 APT20M22JVRU3
8 147 SP4 YES APTM20DAM08TG APTM20SKM08TG
200
MOS 7 5 250 SP6 option APTM20DAM05G APTM20SKM05G
SP1
4 300 SP6 option APTM20DAM04G APTM20SKM04G
MOS 5 100 30 SOT-227 - APT5010JVRU2 APT5010JVRU3
100 30 SOT-227 - APT5010JLLU2 APT5010JLLU3
75 32 SOT-227 - APT50M75JLLU2 APT50M75JLLU3
500 MOS 7
MOS 8 65 43 SOT-227 - APT58M50JU2 APT58M50JU3
70 40 SOT-227 - APT40N60JCU2 APT40N60JCU3
SP3
600 CoolMOS
24 70 SP1 YES APTC60DAM24T1G APTC60SKM24T1G
120 25 SOT-227 - APT33N90JCU2 APT33N90JCU3
900 CoolMOS
60 44 SP1 YES APTC90DAM60T1G APTC90SKM60T1G
180 33 SP4 YES APTM100DA18TG APTM100SK18TG
MOS 7
1000 90 59 SP6 option APTM100DAM90G APTM100SKM90G
MOS 8 330 17 SP1 YES APTM100DA33T1G APTM100SK33T1G
1200 MOS8 300 23 SP1 YES APTM120DA30T1G N/A
SP4
DUAL CHOPPER SP6

Package NTC
...DDA... ...DSK...
19 50 SP3 YES APTM10DDAM19T3G APTM10DSKM19T3G
100 MOS 5
100 24 SP3 YES APTM50DDA10T3G APTM50DSK10T3G
500 MOS 7
45 38 SP1 YES APTC60DDAM45T1G APTC60DSKM45T1G
600 CoolMOS
800 CoolMOS 150 21 SP3 YES APTC80DDA15T3G APTC80DSK15T3G
1000 MOS 7 350 17 SP3 YES APTM100DDA35T3G APTM100DSK35T3G
CoolMOSTM is a trademark of Infineon Technologies AG. All Power Modules RoHS Compliant
27
FULL BRIDGE
4.5 207 SP6 - APTM10HM05FG
100 FREDFET 5 19 50 SP3 YES APTM10HM19FT3G
9 100 SP3 YES APTM10HM09FT3G SP1
20 62 SP4 YES APTM20HM20FTG
200 FREDFET 7
10 125 SP6 - APTM20HM10FG
140 18 SP3 YES APTM50H14FT3G
75 32 SP3 YES APTM50HM75FT3G
FREDFET 7
500 65 37 SP4 YES APTM50HM65FTG
65 37 SP3 YES APTM50HM65FT3G
SP2
FREDFET 8 150 19 SP1 YES APTM50H15FT1G
70 29 SP1 YES APTC60HM70T1G
83 21 SP2 YES APTC60HM83FT2G
CoolMOS
600 70 29 SP3 YES APTC60HM70T3G
35 54 SP3 YES APTC60HM35T3G SP3
150 21 SP1 YES APTC80H15T1G
800 CoolMOS 290 11 SP3 YES APTC80H29T3G
900 CoolMOS
350 17 SP4 YES APTM100H35FTG
SP4
FREDFET 7
1000 350 17 SP3 YES APTM100H35FT3G
180 33 SP6 - APTM100H18FG
FREDFET 7 290 25 SP6 - APTM120H29FG
1200
SP6
FULL BRIDGE + SERIES AND PARALLEL DIODES
200 MOS 7 20 62 SP4 YES APTM20HM20STG
500 MOS 7 75 32 SP4 YES APTM50HM75STG
1000 MOS 7 450 13 SP4 YES APTM100H45STG
ASYMMETRICAL BRIDGE
100 MOS5 4.5 207 SP6 - APTM10DHM05G
16 77 SP3 YES APTM20DHM16T3G
200 MOS 7
8 147 SP6 - APTM20DHM08G
MOS 7 38 64 SP6 - APTM50DHM38G
500
MOS 8 65 32 SP3 YES APTM50DHM65T3G
600 CoolMOS 24 70 SP3 YES APTC60DHM24T3G
28
PHASE LEG
4.5 207 SP4 YES APTM10AM05FTG
100 FREDFET 5
2.25 370 SP6 option APTM10AM02FG
10 125 SP4 YES APTM20AM10FTG
8 147 SP4 YES APTM20AM08FTG SP1
200 FREDFET 7
5 250 SP6 option APTM20AM05FG
500 FREDFET 7
45 38 SP1 YES APTC60AM45T1G
42 40 SP2 - APTC60AM42F2G SP2
CoolMOS 35 54 SP1 YES APTC60AM35T1G
600
24 70 SP2 - APTC60AM242G
FREDFET 8 110 30 SP1 YES APTM60A11FT1G
900 CoolMOS
60 44 SP2 - APTC90AM602G
180 33 SP4 YES APTM100A18FTG
FREDFET 7
1000 90 59 SP6 option APTM100AM90FG SP4
290 25 SP4 YES APTM120A29FTG
FREDFET 7
1200 150 45 SP6 option APTM120A15FG
PHASE LEG + SERIES AND PARALLEL DIODES

(V) Type (m) TC=80 C SP6
10 125 SP4 YES APTM20AM10STG
200 MOS 7
6 225 SP6 - APTM20AM06SG
38 64 SP4 YES APTM50AM38STG
500 MOS 7
24 110 SP6 - APTM50AM24SG
230 26 SP4 YES APTM100A23STG
1000 MOS 7
130 49 SP6 - APTM100A13SG
1200 MOS 7 200 37 SP6 - APTM120A20SG
SP6-P
PHASE LEG + SERIES DIODES
1000 MOS 7 130 49 SP6 - APTM100A13DG
1200 MOS 7 200 37 SP6 - APTM120A20DG
TRIPLE PHASE LEG

75 MOSFET 4.2 90 SP6-P option APTM08TAM04PG
19 50 SP6-P option APTM10TAM19FPG
100 FREDFET 5
9 100 SP6-P option APTM10TAM09FPG
200 FREDFET 7 16 74 SP6-P option APTM20TAM16FPG
500 FREDFET 7 65 37 SP6-P option APTM50TAM65FPG
35 54 SP6-P option APTC60TAM35PG
600 CoolMOS
24 70 SP6-P YES APTC60TAM24TPG
800 CoolMOS 150 21 SP6-P option APTC80TA15PG
900 CoolMOS 60 44 SP6-P YES APTC90TAM60TPG
1000 FREDFET 7 350 17 SP6-P option APTM100TA35FPG
29
TRIPLE DUAL COMMON SOURCE

100 MOS 5 9 100 SP6-P option APTM10TDUM09PG
600 CoolMOS 35 54 SP6-P option APTC60TDUM35PG
800 CoolMOS 150 21 SP6-P option APTC80TDU15PG SP1
1200 MOS 7 570 13 SP6-P option APTM120TDU57PG
DUAL COMMON SOURCE

Package NTC Part Number SP3
100 MOS 5 2.25 370 SP6 - APTM10DUM02G
8 147 SP4 YES APTM20DUM08TG
200 MOS 7 5 250 SP6 - APTM20DUM05G
4 300 SP6 - APTM20DUM04G
35 70 SP4 YES APTM50DUM35TG
500 MOS 7
17 140 SP6 - APTM50DUM17G
1000 MOS 7 90 59 SP6 - APTM100DUM90G
1200 MOS 7 150 45 SP6 - APTM120DU15G
SP4
SINGLE SWITCH
2.25 430 SP6 option APTM10UM02FAG
100 FREDFET 5
1.5 640 SP6 option APTM10UM01FAG
200 FREDFET 7 3 434 SP6 option APTM20UM03FAG
60 97 SP6 option APTM100UM60FAG
1000 FREDFET 7
45 160 SP6 option APTM100UM45FAG SP6
SINGLE SWITCH + SERIES DIODE

65 110 SP6 - APTM100UM65DAG
1000 MOS 7
45 160 SP6 - APTM100UM45DAG
1200 MOS 7 70 126 SP6 - APTM120UM70DAG
SP6-P
SINGLE SWITCH + SERIES AND PARALLEL DIODES

200 MOS 7 4 310 SP6 option APTM20UM04SAG
1200 MOS 7 100 86 SP6 option APTM120U10SAG
INTERLEAVED PFC
45 38 SP1 YES APTC60VDAM45T1G
600 CoolMOS
24 70 SP3 YES APTC60VDAM24T3G
30
SINGLE AND DUAL LINEAR MOSFET
VDSS MOSFET RDS (ON) Shunt

Package NTC
(V) Type (m) Resistor (mR)
100 9 4.4 YES APTML10UM09R004T1AG APTML102UM09R004T3AG

MOS 5
200 18 10 YES APTML20UM18R010T1AG APTML202UM18R010T3AG
500 90 20 SP1 or SP3 YES APTML50UM90R020T1AG APTML502UM90R020T3AG
MOSFET Linear
600 125 20 YES APTML60U12R020T1AG APTML602U12R020T3AG
1000 MOS 4 Linear 600 20 YES APTML100U60R020T1AG APTML1002U60R020T3AG
Renewable Energy Power Modules

FULL BRIDGE
VCES IC (A) VCE (on)(V)
Technology Package NTC Part Number
(V) TC=80 C at rated Ic
50 2.1/1.5 SP3 YES APTGV50H60T3G
Mix Trench IGBT
& NPT IGBT 75 2.1/1.5 SP3 YES APTGV75H60T3G SP1
600 100 2.1/1.5 SP3 YES APTGV100H60T3G
CoolMOS
or
Mix Trench IGBT 50 83mR/1.5 SP1 YES APTCV40H60CT1G
& CoolMOS 50 45mR/1.5 SP3 YES APTCV50H60T3G
Fast IGBT
Mix Trench IGBT 25 3.2/1.7 SP3 YES APTGV25H120T3G

1200 & NPT IGBT 50 3.2/1.7 SP3 YES APTGV50H120T3G
PFC + BYPASS DIODE + PHASE LEG SP3

Technology Package NTC Special Part Number
38 45mR SP1 N/A 10A PFC SiC diode APTC60AM45BC1G
38 45mR SP1 N/A - APTC60AM45B1G
600 CoolMOS
27 83mR SP1 N/A 10A PFC SiC diode APTC60AM83BC1G
27 83mR SP1 N/A - APTC60AM83B1G
PFC + FULL BRIDGE

SP3F
Mix Trench IGBT 50 2.1/1.5 SP4 - APTGV50H60BG
600 & NPT IGBT
Fast IGBT
100 2.1/1.5 SP6-P YES APTGV100H60BTPG
Mix Trench IGBT 25 3.2/1.7 SP4 - APTGV25H120BG
1200 & NPT IGBT 50 3.2/1.7 SP6-P YES APTGV50H120BTPG
PFC + BYPASS DIODE + FULL BRIDGE SP4

38 1.5/45mR SP3F YES 20A PFC SiC diode APTCV60HM45BC20T3G
Mix Trench IGBT
38 1.5/45mR SP3F YES - APTCV60HM45BT3G
& CoolMOS
29 1.5/70mR SP3F YES - APTCV60HM70BT3G
600
CoolMOS 29 70mR SP3F YES - APTC60HM70BT3G
Mix Trench IGBT 50 3.2/1.7 SP3F YES - APTGV50H60BT3G
& NPT IGBT
SECONDARY FAST RECTIFIER + FULL BRIDGE

(V)
Technology
TC=80 C at rated Ic
Package NTC Special Part Number SP6-P
38 1.5/45mR SP3F YES 20A SiC antiparallel diode APTCV60HM45RCT3G
Mix Trench IGBT
38 1.5/45mR SP3F YES - APTCV60HM45RT3G
& CoolMOS
600 29 1.5/70mR SP3F YES - APTCV60HM70RT3G
CoolMOS 29 70mR SP3F YES - APTC60HM70RT3G
TRENCH 3 50 1.5 SP3F YES - APTGT50H60RT3G
CoolMOSTM is a trademark of Infineon Technologies AG.

31
Renewable Energy Power Modules
boost buck
600 CoolMOS 70 24mR SP3F YES APTC60BBM24T3G
600 TRENCH 3 100 1.5 SP3F YES APTGT100BB60T3G
3-LEVEL NPC INVERTER SP1

20 1.5 SP1 - APTGT20TL601G
30 1.5 SP3 YES APTGT30TL60T3G
30 1.5 SP1 - APTGT30TL601G
50 1.5 SP1 - APTGT50TL601G
TRENCH 3
600
75 1.5 SP3 YES APTGT75TL60T3G SP3
150 1.5 SP6 - APTGT150TL60G
200 1.5 SP6 - APTGT200TL60G
300 1.5 SP6 - APTGT300TL60G
30 2.1 SP1 - APTGF30TL601G
NPT FAST
50 2.1 SP3 YES APTGF50TL60T3G
300 1.5 SP6 APTGT300TL65G NEW!
650 Trench 3 NEW! SP3F
400 1.5 SP6 APTGT400TL65G
60 1.85 SP3 YES APTGL60TL120T3G
1200 TRENCH 4
240 1.8 SP6 - APTGL240TL120G
1700 TRENCH 3 100 2.0 SP6 - APTGT100TL170G
RDS (ON) VCE (on) IGBT (V)

VCES
Technology CoolMOS Package NTC Part Number
(V) / Ic (A)
(m)
24 1.5/75 SP3 YES APTCV60TLM24T3G
Mix Trench IGBT 45 1.5/75 SP3 YES APTCV60TLM45T3G
600
& CoolMOS 70 1.5/50 SP3 YES APTCV60TLM70T3G
99 1.5/30 SP3 YES APTCV60TLM99T3G
SP6 3-Level
Mix Trench IGBT
900 120 1.85/50 SP3 YES APTCV90TL12T3G
SP1 & CoolMOS
SP3
T-TYPE 3-LEVEL INVERTER

40 2.05 SP3F YES 10A/600V SiC APTGLQ40HR120CT3G
600/1200 TRENCH 4 FAST 80 2.05 SP3F YES 30A/600V SiC APTGLQ80HR120CT3G
200 2.05 SP6 NO - APTGLQ200HR120G

32
Power Modules with SiC Schottky Diodes
Silicon Carbide (SiC) Schottky Diodes offer superior dynamic Extremely fast switching of SiC Applications: Operating Frequency vs Drain Current
400
and thermal performance over conventional Silicon power Schottky diode enables designs with: PFC
diodes. The main advantages of the SiC Schottky Diodes Improved System Efficiency Output Rectification
are: Higher Reliability Solar Inverter 300
SiC diode
Frequency (kHz)
Essentially zero forward and reverse recovery = Lower System Switching Losses Motor Control
reduced switch and diode switching losses Lower System Cost Snubber Diode 200
Temperature independent switching behavior = stable Smaller EMI Filter
Smaller Magnetic Components Si diode
high temperature performance 100
Positive temperature coefficient of VF = ease of Smaller Heat-Sink
parallel operation Smaller Switches, Eliminate Snubbers 0
Usable 175C Junction Temperature = safely operate Reduced System Size 10 20 30 40 50 60
at higher temperatures Fewer / Smaller Components Drain Current (A)
Diode Power Modules with SiC Diodes

DUAL DIODE
VRRM IF (A) VF (V)

DIODE Type Package
(V) TC=100 C TJ=25 C
Anti-Parallel Parallel
20 1.6 SOT-227 APT2X20DC60J APT2X21DC60J

30 1.6 SOT-227 APT2X30DC60J APT2X31DC60J SOT-227
600 SiC 40 1.6 SOT-227 APT2X40DC60J APT2X41DC60J
1200 SiC
60 1.6 SOT-227 APT2X60DC120J APT2X61DC120J SP1
FULL BRIDGE
VRRM IF (A) VF (V)
DIODE Type Package Part Number
(V) TC=100 C TJ=25 C
20 1.6 SP1 APTDC20H601G
SP3F
SiC 40 1.6 SP1 APTDC40H601G
40 1.6 SOT-227 APT40DC60HJ
10 1.6 SOT-227 APT10DC120HJ
20 1.6 SP1 APTDC20H1201G
1200 SiC 20 1.6 SOT-227 APT20DC120HJ
40 1.6 SP1 APTDC40H1201G
40 1.6 SOT-227 APT40DC120HJ
IGBT Power Modules with SiC Diodes

BOOST CHOPPER
VRRM IC (A) VCE (on)(V)
IGBT Type Package NTC Part Number
600 NPT 50 2.1 SOT-227 - APT50GF60JCU2
15 3.2 SOT-227 - APT15GF120JCU2
NPT 25 3.2 SOT-227 - APT25GF120JCU2
1200 50 3.2 SP1 YES APTGF50DA120CT1G
25 2.05 SOT-227 - APT25GLQ120JCU2
TRENCH 4 FAST
40 2.05 SOT-227 - APT40GLQ120JCU2
DUAL CHOPPER
VRRM IC (A) VCE (on)(V)
IGBT Type Package NTC Part Number
1200 TRENCH 4 FAST 40 2.05 SP3F YES APTGLQ40DDA120CT3G

33
Power Modules with SiC Schottky Diodes
MOSFETs & CoolMOS Power Modules with SiC Diodes
TM
single switch + series fred and sic parallel diodes

VDSS RDS (ON) ID (A)
MOSFET Type Package NTC Part Number
(V) (m) TC=80 C
1000 MOS7 65 110 SP6 option APTM100UM65SCAVG
1200 MOS7 100 86 SP6 option APTM120U10SCAVG
chopper SOT-227

MOSFET Type Package NTC
(V) (m) TC=80 C
DA or U2 SK or U3
500 MOS8 65 43 SOT-227 - APT58M50JCU2 N/A SP1
45 38 SOT-227 - APT50N60JCCU2 N/A
600 CoolMOS 24 70 SP1 YES N/A APTC60SKM24CT1G
18 107 SP4 YES APTC60DAM18CTG N/A
120 25 SOT-227 - APT33N90JCCU2 N/A
900 CoolMOS
60 44 SP1 YES APTC90DAM60CT1G APTC90SKM60CT1G
1000 MOS 8 330 20 SOT-227 - APT26M100JCU2 APT26M100JCU3
560 15 SOT-227 - APT20M120JCU2 APT20M120JCU3
1200 MOS 8
300 23 SP1 YES APTM120DA30CT1G N/A SP3F
PHASE LEG + SERIES FRED AND SiC PARALLEL DIODES

(V) (m) TC=80 C
38 67 SP4 YES APTM50AM38SCTG
500 MOS 7
24 110 SP6 - APTM50AM24SCG SP4
35 54 SP4 YES APTC60AM35SCTG
600 CoolMOS 24 70 SP4 YES APTC60AM24SCTG
18 107 SP6 - APTC60AM18SCG
900 CoolMOS 60 44 SP4 YES APTC90AM60SCTG
150 21 SP4 YES APTC80A15SCTG
800 CoolMOS 100 32 SP4 YES APTC80A10SCTG
75 43 SP6 - APTC80AM75SCG
1000 MOS 7 130 49 SP6 - APTM100A13SCG
Full bridge + SERIES FRED AND SiC PARALLEL DIODES

SP6
(V) (m) TC=80 C
500 MOS 7 75 34 SP4 YES APTM50HM75SCTG
70 29 SP4 YES APTC60HM70SCTG
600 CoolMOS
45 38 SP4 YES APTC60HM45SCTG
800 CoolMOS 290 11 SP4 YES APTC80H29SCTG
900 CoolMOS 120 23 SP4 YES APTC90H12SCTG
1000 MOS 7 450 14 SP4 YES APTM100H45SCTG
SP6-P
triple phase leg
(V) (m) TC=80 C
600 CoolMOS 24 87 SP6-P YES APTC60TAM21SCTPAG
1000 MOS 7 350 50 SP6-P YES APTM100TA35SCTPG

34
SiC MOSFET Power Modules
T-TYPE 3-LEVEL INVERTER

VCES RDS (ON) ID (A)
(V) (m) TC=80 C
SOT-227
IGBT & 110 20 SP3F YES APTMC120HR11CT3G
600/1200 SiC MOSFET 40 50 SP3F YES APTMC120HRM40CT3G
3-LEVEL NPC INVERTER

Technology Package NTC Part Number SP1
(V) (m) TC=80 C
110 20 SP3F YES APTMC60TL11CT3AG
600 SiC MOSFET 55 40 SP3F YES APTMC60TLM55CT3AG
14 160 SP6 - APTMC60TLM14CAG
SP3F
Phase leg
(V) (m) TC=80 C
55 40 SP1 YES APTMC120AM55CT1AG
25 80 SP3 YES APTMC120A25CT3AG NEW!
20 108 SP1 YES APTMC120AM20CT1AG
1200 SiC MOSFET 16 102 D3 - APTMC120AM16CD3AG NEW!
12 150 SP3 YES APTMC120AM12CT3AG NEW!
9 200 SP3 YES APTMC120AM09CT3AG NEW! SP6 3-Level
8 200 D3 - APTMC120AM08CD3AG
1700 SiC MOSFET
Triple Phase leg

VCES
Technology
RDS (ON) ID (A)
Package NTC Part Number D3
(V) (m) TC=80 C
33 60 SP6-P YES APTMC120TAM33CTPAG NEW!
100 SiC MOSFET 17 100 SP6-P YES APTMC120TAM17CTPAG NEW!
12 150 SP6-P YES APTMC120TAM12CTPAG NEW!
boost chopper
Technology Package NTC Part Number SP6-P
(V) (m) TC=80 C
1200 SiC MOSFET 40 50 SOT-227 - APT50MC120JCU2
35
DIODE Power Modules
single diode
VRRM DIODE IF (A) VF (V)

Package
(V) Type TC=80 C TJ=25 C
LP4
200 500 1.1 APTDF500U20G
400 500 1.5 APTDF500U40G
Non Isolated
600 FRED 450 1.8 LP4 APTDF450U60G
Packages
1000 430 2.3 APTDF430U100G
1200 400 2.5 APTDF400U120G
single diode - non isolated package Half Pack

Package
(V) Type per Diode TJ=25 C
Cathode to Base Cathode to Base SDM

600 FRED 100 1.35 Half-Pack HU10260 HU10260R
400 RECTIFIER 300 1.1 SDM SDM30004 SDM30004R
30 180 0.55 HS18230 HS18230R
40 240 0.56 HS24040 HS24040R
120 0.55 HS12045 HS12045R
45 180 0.72 HS18145 HS18145R
240 0.57 HS24045 HS24045R
SCHOTTKY 120 Half-Pack HS123100 HS123100R
0.91
100 180 HS183100 HS183100R
240 0.86 HS243100 HS243100R SM1
150 240 0.87 HS246150 HS246150R
180 240 0.88 HS247180 HS247180R
200 240 0.89 HS247200 HS247200R
SM2
3-PHASE BRIDGE
Package Part Number
(V) Type TC=80 C TJ=25 C SM2-1
40 1.3 SP1 APTDR40X1601G
1600 RECTIFIER
90 1.3 SP1 APTDR90X1601G
30 1.6 SM1 MSD30-08/12/16/18
50 1.5 SM1 MSD50-08/12/16/18
50 1.45 SM2-1 MSDM50-08/12/16/18
52 1.8 SM2 MSD52-08/12/16/18
800
75 1.6 SM2 MSD75-08/12/16/18 SM3
75 1.38 SM2-1 MSDM75-08/12/16/18
1200
RECTIFIER 100 1.9 SM3 MSD100-08/12/16/18
1600
100 1.7 SM2-1 MSDM100-08/12/16/18
1800
130 1.8 SM3 MSD130-08/12/16/18
150 1.28 SM3-1 MSDM150-08/12/16/18
160 1.65 SM3 MSD160-08/12/16/18
200 1.55 SM3 MSD200-08/12/16/18
200 1.31 SM3-1 MSDM200-08/12/16/18 SM3-1
3-PHASE BRIDGE + THYRISTOR

Package Part Number
(V) Type TC=80 C TJ=25 C
SM4
75 1.4 SM4 MSDT75-16
RECTIFIER 100 1.35 SM4 MSDT100-16
1600
THYRISTOR 150 1.35 SM4 MSDT150-16
200 1.35 SM5 MSDT200-16
SM5
36
DIODE Power Modules
full BRIDGE
VRRM DIODE IF (A) VF (V) Package
Part Number
(V) Type TC=80 C TJ=25 C Style
30 1.0 SOT-227 APT30DF20HJ
200 60 1.0 SOT-227 APT60DF20HJ SOT-227
100 1.0 SP4 APTDF100H20G
30 1.8 SP1 APTDF30H601G
30 1.8 SOT-227 APT30DF60HJ
60 1.8 SOT-227 APT60DF60HJ
60 1.8 SP1 APTDF60H601G
600
75 1.6 SOT-227 APT75DL60HJ
100 1.6 SOT-227 APT100DL60HJ
100 1.6 SP1 APTDF100H601G
FRED 200 1.6 SP6 APTDF200H60G SP1
30 2.1 SOT-227 APT30DF100HJ
1000 100 2.1 SP4 APTDF100H100G
200 2.1 SP6 APTDF200H100G
30 2.6 SP1 APTDF30H1201G
1200 60 2.6 SP1 APTDF60H1201G
200 2.4 SP6 APTDF200H120G
50 1.8 SOT-227 APT50DF170HJ
75 1.8 SOT-227 APT75DF170HJ SP4
1700
100 2.2 SP4 APTDF100H170G
200 2.2 SP6 APTDF200H170G
100 SCHOTTKY 60 0.9 SOT-227 APT60DS10HJ
200 VJ248M
10 VJ
400 VJ448M
RECTIFIER 1.3
40 APT40DR160HJ
1600 SOT-227
90 APT90DR160HJ
250-700 Controlled VJ247M
450-900 Avalanche 10 1.3 VJ VJ447M
Rectifiers
SP6
660-1100 VJ647M
VJ
THYRISTOR & DIODE DOUBLER

VRRM DIODE IF (A) VF/VTM (V) Package
(V) Type per Diode TJ=25 C Style
Thyristor Diode Doubler Thyristor Doubler D1
25 1.8 MSFC25-08/12/16 MSTC25-08/12/16
40 1.95 MSFC40-08/12/16 MSTC40-08/12/16
800 60 1.65 SF1 MSFC60-08/12/16 MSTC60-08/12/16
RECTIFIER
1200 90 1.65 MSFC90-08/12/16 MSTC90-08/12/16
THYRISTOR
1600 110 1.65 MSFC110-08/12/16 MSTC110-08/12/16
130 1.8 MSFC130-08/12/16 MSTC130-08/12/16
D1
160 1.7 MSFC160-08/12/16 MSTC160-08/12/16
SF1
37
DIODE Power Modules
COMMON CATHODE - COMMON ANODE - DOUBLER

Package
(V) Type per Diode TJ=25 C
Common Cathode Common Anode Doubler

200 1.0 APTDF400KK20G APTDF400AA20G APTDF400AK20G SP6
600 1.6 APTDF400KK60G APTDF400AA60G APTDF400AK60G
1000 FRED 400 2.1 SP6 APTDF400KK100G APTDF400AA100G APTDF400AK100G
36 MSKD36-08/12/16/18 MSAD36-08/12/16/18 MSCD36-08/12/16/18
60 MSKD60-08/12/16/18 MSAD60-08/12/16/18 MSCD60-08/12/16/18
70 SD1 MSKD70-08/12/16/18 MSAD70-08/12/16/18 MSCD70-08/12/16/18
800-1200-
RECTIFIER 100 1.15 MSKD100-08/12/16/18 MSAD100-08/12/16/18 MSCD100-08/12/16/18
1600-1800
120 MSKD120-08/12/16/18 MSAD120-08/12/16/18 MSCD120-08/12/16/18
165 MSKD165-08/12/16/18 MSAD165-08/12/16/18 MSCD165-08/12/16/18
SD1
SD2
200 MSKD200-08/12/16/18 MSAD200-08/12/16/18 MSCD200-08/12/16/18
60 0.98 TwinTower UFT12520 UFT12520A UFT12520D
70 0.98 TO-249 Flat Pack UFT14020 UFT14020A UFT14020D
200 0.98 UFT20020 UFT20020A UFT20020D
100
1.25 TwinTower UFT20120 UFT20120A UFT20120D
200 0.98 UFT40020 UFT40020A UFT40020D
400 FRED
500 1.20 UFT7150 UFT7150A UFT7150D
35
1.35
Mini-Mod
UFT7260SMxC UFT7260SMxA UFT7260SMxD SD2
600
800
30 30 0.47 TO-249 Flat Pack FST16230 FST16230A FST16230D Non Isolated
35
250 0.55 CPT50235 CPT50235A CPT50235D Packages
300 0.65 TwinTower CPT60035 CPT60035A CPT60035D
40 150 0.76 CPT30040 CPT30040A CPT30040D
40 0.53 Mini-Mod FST8145 FST8145A FST8145D
80 0.65 FST16145 FST16145A FST16145D
TO-249 Flat Pack
80 0.74 FST16045 FST16045A FST16045D SM1 SM3 SM5
100 0.68 CPT20145 CPT20145A CPT20145D SM2 SM4 SM6
45 150 0.62 CPT30145 CPT30145A CPT30145D
200 0.57 CPT40145 CPT40145A CPT40145D x option for Mini-Mod Surface Mount Package
250 0.55 TwinTower CPT50145 CPT50145A CPT50145D

0.55 CPT60145 CPT60145A CPT60145D
300
0.65 CPT60045 CPT60045A CPT60045D
60 0.8 CPT12050 CPT12050A CPT12050D
Mini-Mod
50 80 0.74 TO-249 Flat Pack FST16050 FST16050A FST16050D
SCHOTTKY Surface Mount
0.78 CPT30050 CPT30050A CPT30050D
150
0.82 CPT30060 CPT30060A CPT30060D
60 TwinTower
250 0.73 CPT50060 CPT50060A CPT50060D
80 200 0.89 CPT40080 CPT40080A CPT40080D
80 0.96 TO-249 Flat Pack FST16090 FST16090A FST16090D Mini-Mod
90 150 0.98 CPT30090 CPT30090A CPT30090D
TwinTower
200 0.90 CPT40090 CPT40090A CPT40090D
40 0.82 Mini-Mod FST80100 FST80100A FST80100D
60 0.86 TO-249, 9 Pins FST60100 FST60100A FST60100D
80 0.96 TO-249, Flat Pack FST160100 FST160100A FST160100D
100 150 0.98 CPT300100 CPT300100A CPT300100D TO-249
200 0.91 CPT400100 CPT400100A CPT400100D Flat Pack
250 0.90 Twin Tower CPT500100 CPT500100A CPT500100D
0.85 CPT600100 CPT600100A CPT600100D
300
150 0.85 CPT600150 CPT600150A CPT600150D
Twin Tower
Non Isolated
10-pin TO-249

38
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Package Outlines
D3 Pak TO-220 [KF]

or TO-268
Revised
Revised 8/29/97
4/18/95
TO-220 2-Lead C a th o d e
TO-220 3-Lead
C a th o d e
A node
TO-247 3-Lead TO-247 2-Lead
T-MAX TO-264
264 MAX ISOTOP or SOT-227
Refer to web page for additional package outline drawings ISOTOP is a registered trademark of SGS Thomson
39
Power Module Outlines
D1 D3
D4 LP4
LP8 SP1
17.50.5
11.50.5
51.60.5
R5 4.30.25
40.80.5
450.25
SP2 SP3
17,6 0,5
11,5 0,5
73,4 0,5
28 17
R5
40,8 0,5
4,5 0,25
1 12
64 0,25
40
SP3F SF1
SP4 SP6 - 3 outputs

2,80 x 0,5
7,8 MAX
22
16,98
16
15
6,50
108
93
M
13,50 14 5
(3x
)
7,50
48
12
62
7,50
13,50
6,40 (4x)
12 (4x)
28 28
R6
,50
48
SP6 - 4 outputs, Version 1 SP6 4 outputs, Version 2

26/10/12
2,80 x 0,5
2,80 x 0,5
7,8 MAX 7,8 MAX
22
22
17
15
17
15
15
15
6,50
6,50
108
108
93
93
M 5
M 5 (4x)
(4x)
12 18,20
13,50
13,50
7,50
12
18,20
7,50 5,10
14
48
0
62
48
62
7,50
7,50
18,20
14 13,50
13,50
17
6,40 (4x) 6,40 (4x)

12 (4x)
27 27
R6
12 (4x)
,50
28 27 48 48
R6
,50
48 48
26/10/12
26/10/12
SP6-P SD1
41
SD2 SM1
SM2 SM2-1
SM3 SM3-1
SM4 SM5
42
SDM VJ
A
Dim. Inches Millimeters
D
Min. Max. Min. Max. Notes
B A --- 2.650 --- 67.31
B 1.240 1.260 31.49 32.00
F G C --- .925 --- 23.49
D 2.00 BSC 50.80 BSC
F 0.320 0.340 8.13 8.64 Dia.
H H G 5/16-18 UNC
H 0.630 --- 16.00 ---
K K 0.610 0.640 15.49 16.26
L --- .100 --- 2.54
M 0.182 0.192 4.62 4.88
C
L
Standard Polarity: Base plate is cathode
M Reverse Polarity: Base plate is anode
Mini-Mod Surface Mount Mini-Mod
TO-249 9 Pin TO-249
Twin Tower Half-Pack

G D
Dim. Inches Millimeter
J
Minimum Maximum Minimum Maximum Notes
B A 1.52 1.56 38.61 39.62

B .725 .775 18.42 19.69
C .605 .625 15.37 15.88
D 1.182 1.192 30.02 30.28
K F E .745 .755 18.92 19.18 Sq.
C F .152 .160 3.86 4.06 Dia.
H E G 1/4-20 UNC-2B
H .525 .580 13.34 14.73
J .156 .160 3.96 4.06
K .495 .505 12.57 12.83 Dia.
L .120 .130 3.05 3.30
Std. Polarity: Base is cathode

A Rev. Polarity: Base is anode
L
43
Microsemi Power Sales Offices
Semiconductor Products China-Shenzhen
Taiwan
405 SW Columbia Street 10F-A, No. 105, Sec 2, Dun Hua S.
Room A, 17/F, Noble Center
Bend, Oregon 97702 Rd.
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Tel: 541-382-8028 Taipei 106, Taiwan, R.O.C
District
Toll Free USA: 800-522-0809 Tel: +886-2-6636 6588
Shenzhen 518026, China
Fax: (541) 388-0364 Fax: +886-2-2701 9051
Tel: +86-755-82028976
Email: sales.support@microsemi.com Fax: +86-755-82028977 Asia-Pacific Rim
Tel: +886-2-6636-6588
China-Shanghai
Microsemi Power Modules Room 405, No.318, Fuzhou RD,
E-Mail: rsmasia@microsemi.com
26 rue de Campilleau HuangPu district, Shanghai, China Eastern North America
33520 Bruges - France Tel: +86 21-63612788 Tel: (716) 699-5626
Tel: +33-557 921515 Fax: +86 21-63612790 E-Mail: rsmeast@microsemi.com
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Email: sales.support@microsemi.com 7/F., Meeco Industrial Bldg Tel: (214) 763-4666
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Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions
for communications, defense & security, aerospace and industrial markets. Products include high-performance and
radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products;
timing and synchronization devices and precise time solutions, setting the worlds standard for time; voice processing
devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-
Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso
Microsemi Corporate Headquarters
Viejo, Calif., and has approximately 3,400 employees globally. Learn more at www.microsemi.com.
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks
Sales: +1 (949) 380-6136
and service marks are the property of their respective owners. Microsemi reserves the right to change, without notice, the specifications and information
Fax: +1 (949) 215-4996
contained herein.
email: sales.support@microsemi.com MS5-001-14
www.microsemi.com

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Power Products

New image here TBD

CoolMOS comprise a new family of transistors developed by Infineon Technologies AG.

IGBT Switching Frequency Ranges (kHz, hard switched)

650V Power MOS 8TM NPT (NEW!)

900V Power MOS 8TM PT

1200V Power MOS 7TM PT

Power MOS 8TM NPT

Standard Voltage Technology Easy to Short Circuit Comment

150 kHz 200 kHz

69 41 APT95GR65B2 T-MAX T-MAX[B2]

POWER MOS 8TM SINGLE 50 kHz 80 kHz

combi (IGbt & "dq" FRED) 15 kHz 30 kHz

Part Numbers for L

SiC Silicon Carbide MOSFETs

(fast body diode)

Features Fast switching Avalanche energy rated

Applications Power factor correction Arc welding

Body Diode Options

0.43 23 APT22F80B TO-247 or D3

Datasheets available on www.microsemi.com All Products RoHS Compliant

Low Voltage Power MOS V MOSFETs / FREDFETs

300 0.070 48 APT30M70BVRG 48 APT30M70BVFRG TO-247 or D3

Datasheets available on www.microsemi.com All Products RoHS Compliant

BV(DSS) RDS(ON) Package

Datasheets available on www.microsemi.com All Products RoHS Compliant

BVDSS RDS(ON) ID(Cont)

0.125 30 APT30N60KC6 TO-220

CoolMOS comprise a new family of transistors developed by Infineon Technologies AG.

BVDSS RDS(ON) ID(Cont) SOA

1000 0.600 18 325 APL1001J

600 0.125 49 325 APL602B2G

500 0.090 58 325 APL502B2G

Series Voltage Features Applications Comment

Ultra Fast Recovery Diodes

SINGLE 15 2.8 21 960 DQ APT15DQ120BG TO-247

Datasheets available on www.microsemi.com All Products RoHS Compliant

200 2x60 0.83 35 490 Schottky APT2X61S20J TO-220[KCT]

2x15 2.5 20 810 DQ APT15DQ100BCTG TO-247 [BCT] TO-247[BCA]

2x60 1.6 30 920 D APT60D60LCTG TO-264 [LCT]

Tandem, DS Diodes for PFC Boost Applications

Part Pout Freq. VDD/BVDSS Rthjc Package Class of

ARF476FL 300 150 165/500 0.31 T3 A-E

ARF469AG/BG 300 45 165/500 0.35 TO-264 A-E T1 T2 T2B

Part Pout Freq. Gain Eff. Typ VDD/BVDSS Rthjc Package

Datasheets available on www.microsemi.com All Products RoHS Compliant

Part Number Pout Freq. VDD/BVDSS Rthjc Package Class of

Reference Design Kits

The DRF1200/Class-E Single Ended RF Generator is a

DRF1300/CLASS-D, 13.56 MHz

The DRF1300/Class-D Push Pull RF Generator is a

DRF1400/Class-D, 13.56 MHz

The DRF1400/Class-D Half Bridge RF

IGBT MOSFET Diode Mix Si-SiC Full SiC

Dual Common Source X X

Full Bridge + PFC X X X

3-Level NPC Inverter X X

NPT MOSFET Schottky IGBT Diode

Improved Low Profile Packages

Industry Standard Packages