Freescale Semiconductor Document Number: MMRF2004NB

Technical Data Rev. 0, 12/2013

RF LDMOS Wideband Integrated

Power Amplifier MMRF2004NBR1
The MMRF2004NB wideband integrated circuit is designed with on--chip
matching that makes it usable from 2300 to 2700 MHz. This multi--stage
structure is rated for 26 to 32 V operation and covers all typical cellular base
station modulation formats. 2500--2700 MHz, 4 W AVG., 28 V
WiMAX
 Typical WiMAX Performance: VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, RF LDMOS WIDEBAND
Pout = 4 W Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,
INTEGRATED POWER AMPLIFIER
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --50 dBc in 1 MHz Channel Bandwidth
Driver Applications
 Typical WiMAX Performance: VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA,
Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% TO--272WB--16
Probability on CCDF. PLASTIC
Power Gain — 27.8 dB
Power Added Efficiency — 3.2%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --56 dBc in 1 MHz Channel Bandwidth
 Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 W CW Output
Power (3 dB Input Overdrive from Rated Pout)
 Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 5 W CW Pout
 Typical Pout @ 1 dB Compression Point ≃ 25 W CW
Features
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
 On--Chip Matching (50 Ohm Input, DC Blocked)
 Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
 Integrated ESD Protection
 225C Capable Plastic Package
 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

GND 1 16 GND
VDS1 2
NC 3 15 NC
NC 4
NC 5
VDS1
RFin 6 14 RFout/VDS2

RFin RFout/VDS2 NC 7
VGS1 8
VGS2 9
VDS1 10 13 NC
VGS1 Quiescent Current GND 11 12 GND
VGS2 Temperature Compensation (1)
(Top View)
VDS1
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977
or AN1987.

 Freescale Semiconductor, Inc., 2013. All rights reserved. MMRF2004NBR1

RF Device Data
Freescale Semiconductor, Inc. 1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDS --0.5, +65 Vdc
Gate--Source Voltage VGS --0.5, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC 150 C
Operating Junction Temperature (1) TJ 225 C
Input Power Pin 22 dBm

Table 2. Thermal Characteristics

Characteristic Symbol Value (2) Unit
Thermal Resistance, Junction to Case RJC C/W

WiMAX Application Stage 1, 28 Vdc, IDQ1 = 77 mA 5.9

(Case Temperature 75C, Pout = 4 W Avg.) Stage 2, 28 Vdc, IDQ2 = 275 mA 1.4

CW Application Stage 1, 28 Vdc, IDQ1 = 77 mA 5.5

(Case Temperature 81C, Pout = 25 W CW) Stage 2, 28 Vdc, IDQ2 = 275 mA 1.3

Table 3. ESD Protection Characteristics

Test Methodology Class
Human Body Model (per JESD22--A114) 1B
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) II

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C

Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 10 Adc
(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current IDSS — — 1 Adc

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate--Source Leakage Current IGSS — — 1 Adc

(VGS = 1.5 Vdc, VDS = 0 Vdc)

Stage 1 -- On Characteristics
Gate Threshold Voltage VGS(th) 1.2 1.9 2.7 Vdc
(VDS = 10 Vdc, ID = 20 Adc)

Gate Quiescent Voltage VGS(Q) — 2.7 — Vdc

(VDS = 28 Vdc, IDQ1 = 77 mA)

Fixture Gate Quiescent Voltage VGG(Q) 12.5 15.8 19.5 Vdc

(VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test)
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)

MMRF2004NBR1
RF Device Data
2 Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 10 Adc
(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current IDSS — — 1 Adc

(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current IGSS — — 1 Adc
(VGS = 1.5 Vdc, VDS = 0 Vdc)

Stage 2 -- On Characteristics
Gate Threshold Voltage VGS(th) 1.2 1.9 2.7 Vdc
(VDS = 10 Vdc, ID = 80 Adc)

Gate Quiescent Voltage VGS(Q) — 2.7 — Vdc

(VDS = 28 Vdc, IDQ2 = 275 mAdc)
Fixture Gate Quiescent Voltage VGG(Q) 11 14 18 Vdc
(VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test)
Drain--Source On--Voltage VDS(on) 0.15 0.47 0.8 Vdc
(VGS = 10 Vdc, ID = 800 mAdc)

Stage 2 -- Dynamic Characteristics (1)

Output Capacitance Coss — 111 — pF
(VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain Gps 25.5 28.5 30.5 dB
Power Added Efficiency PAE 15 17 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB
Adjacent Channel Power Ratio ACPR — --50 --46 dBc
Input Return Loss IRL — --15 --10 dB
Typical Performances OFDM Signal -- 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc,
IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth,
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Relative Constellation Error (2) RCE — --33 — dB
Error Vector Magnitude (2) EVM — 2.2 — % rms
1. Part internally matched both on input and output. (continued)
2. RCE = 20Log(EVM/100)

MMRF2004NBR1
RF Device Data
Freescale Semiconductor, Inc. 3
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, 2500--2700 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB — 25 — W
IMD Symmetry @ 27 W PEP, Pout where IMD Third Order IMDsym MHz
Intermodulation  30 dBc — 50 —
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point VBWres — 90 — MHz
(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 200 MHz Bandwidth @ Pout = 4 W Avg. GF — 0.5 — dB

Average Deviation from Linear Phase in 200 MHz Bandwidth  — 2.1 — 
@ Pout = 25 W CW
Average Group Delay @ Pout = 25 W CW, f = 2600 MHz Delay — 2.3 — ns
Part--to--Part Insertion Phase Variation @ Pout = 25 W CW,  — 22 — 
f = 2600 MHz, Six Sigma Window

Gain Variation over Temperature G — 0.036 — dB/C

(--30C to +85C)

Output Power Variation over Temperature P1dB — 0.003 — dBm/C

(--30C to +85C)

Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg.,
f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain Gps — 27.8 — dB
Power Added Efficiency PAE — 3.2 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB
Adjacent Channel Power Ratio ACPR — --56 — dBc
Input Return Loss IRL — --13 — dB
Relative Constellation Error @ Pout = 1.25 W Avg. (1) RCE — --40 — dB
1. RCE = 20Log(EVM/100)

MMRF2004NBR1
RF Device Data
4 Freescale Semiconductor, Inc.
 VDD1 VD2 B1
28 V
C17 C16

C9 C15

C8

C14
C7

1 NC DUT NC 16 C13
C12
2 NC 15
3 NC
4 NC Z13
RF 5 NC RF
INPUT OUTPUT
Z1 Z2 Z3 Z4 14 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z14
6
C11
C4 7 NC C10
8 Quiescent Current
9 Temperature
C5
Compensation NC 13
10
11 NC NC 12
C6 C1
VG1
C2
R4 R5 R6

C3
VG2

R1 R2 R3

Z1 0.500 x 0.027 Microstrip Z9 0.040 x 0.061 Microstrip

Z2 0.075 x 0.127 Microstrip Z10 0.020 x 0.050 Microstrip
Z3 1.640 x 0.027 Microstrip Z11 0.050 x 0.050 Microstrip
Z4 0.100 x 0.042 Microstrip Z12 0.050 x 0.027 Microstrip
Z5 0.151 x 0.268 Microstrip Z13* 0.338 x 0.020 Microstrip
Z6 0.025 x 0.268 x 0.056 Taper Z14 1.551 x 0.027 Microstrip
Z7 0.050 x 0.056 Microstrip PCB Rogers R04350B, 0.0133, r = 3.48
Z8 0.356 x 0.056 Microstrip * Line length includes microstrip bends

Figure 3. MMRF2004NBR1 Test Circuit Schematic

Table 6. MMRF2004NBR1 Test Circuit Component Designations and Values

Part Description Part Number Manufacturer
B1 47 , 100 MHz Short Ferrite Bead 2743019447 Fair--Rite
C1, C4, C7, C12, C15 6.8 pF Chip Capacitors ATC600S6R8CT250XT ATC
C2, C5, C8, C13 10 nF Chip Capacitors C0603C103J5RAC Kemet
C3, C6, C9, C14 1 F, 50 V Chip Capacitors GRM32RR71H105KA01B Murata
C10 2.4 pF Chip Capacitor ATC600S2R4BT250XT ATC
C11 3.3 pF Chip Capacitor ATC600S3R3BT250XT ATC
C16, C17 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
R1, R4 12 K, 1/4 W Chip Resistors CRCW12061202FKEA Vishay
R2, R3, R5, R6 1 K, 1/4 W Chip Resistors CRCW12061001FKEA Vishay

MMRF2004NBR1
RF Device Data
Freescale Semiconductor, Inc. 5
 B1

C16
C17
C15
C8 C9 C14 C12
C7
C13

C4

CUT OUT AREA

C5
C1 C10 C11
R4 R5 R6 C2

VG1 C6
C3
R1 R2 R3
VG2

Figure 4. MMRF2004NBR1 Test Circuit Component Layout

MMRF2004NBR1
RF Device Data
6 Freescale Semiconductor, Inc.
 TYPICAL CHARACTERISTICS

28.6 18

PAE, POWER ADDED

EFFICIENCY (%)
PAE
28.4 17
28.2 Gps 16

Gps, POWER GAIN (dB)

28 15
V = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA
27.8 DD 14
OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel

IRL, INPUT RETURN LOSS (dB)

27.6 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability --53 --16 --0.2
on CCDF --54 --0.4
27.4 --18

ACPR (dBc)

PARC (dB)
27.2 ACPR --55 --20 --0.6
27 --56 --22 --0.8
PARC
26.8 --57 --24 --1
26.6 IRL --58 --26 --1.2
2500 2525 2550 2575 2600 2625 2650 2675 2700
f, FREQUENCY (MHz)
Figure 5. WiMAX Broadband Performance @ Pout = 4 Watts Avg.

28.6 3.5

PAE, POWER ADDED

EFFICIENCY (%)
28.4 PAE 3
Gps
28.2 2.5
28 2
Gps, POWER GAIN (dB)

VDD = 28 Vdc, Pout = 26 dBm (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA

27.8 OFDM 802.16d, 64 QAM 3/ , 4 Bursts, 10 MHz Channel Bandwidth 1.5
4

IRL, INPUT RETURN LOSS (dB)

27.6 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF --56 --10 --0.2
27.4 PARC --57 --15 --0.4

ACPR (dBc)

PARC (dB)
27.2 --58 --20 --0.6
ACPR
27 --59 --25 --0.8
26.8 --60 --30 --1
IRL
26.6 --61 --35 --1.2
2500 2525 2550 2575 2600 2625 2650 2675 2700
f, FREQUENCY (MHz)
Figure 6. WiMAX Broadband Performance @ Pout = 26 dBm Avg.

30 30
IDQ2 = 412 mA IDQ1 = 103 mA
29 344 mA 29
96 mA
275 mA
Gps, POWER GAIN (dB)

Gps, POWER GAIN (dB)

28 28 77 mA

27 27
206 mA 58 mA
26 26

25 137 mA 25 39 mA
VDD = 28 Vdc VDD = 28 Vdc
24 IDQ1 = 77 mA 24 IDQ2 = 275 mA
f = 2600 MHz f = 2600 MHz
23 23
0.1 1 10 100 0.1 1 10 100
Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain versus Output Power Figure 8. Power Gain versus Output Power
@ IDQ1 = 77 mA @ IDQ2 = 275 mA

MMRF2004NBR1
RF Device Data
Freescale Semiconductor, Inc. 7
 TYPICAL CHARACTERISTICS

IMD, INTERMODULATION DISTORTION (dBc)

VDD = 28 Vdc, Pout = 27 W (PEP), IDQ1 = 77 mA
--10 IDQ2 = 275 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz

--20

IM3--U
--30
IM3--L
IM5--L
--40
IM5--U
IM7--L
--50
IM7--U
--60
1 10 100
TWO--TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing

29 1 35 --30
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM
802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel

PAE, POWER ADDED EFICIENCY (%)

28.5 0 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% 30 --35
OUTPUT COMPRESSION AT 0.01%

Probability on CCDF PAE

PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)

ACPR
28 --1 25 --40

ACPR (dBc)
--1 dB = 4.01 W Gps
27.5 --2 20 --45

27 --3 15 --50

26.5 --4 PARC 10 --55

--2 dB = 6.21 W --3 dB = 8.59 W
26 --5 5 --60
1 3 6 9 12 15
Pout, OUTPUT POWER (WATTS)
Figure 10. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power

45 --15
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA --40_C
PAE, POWER ADDED EFFICIENCY (%),

40 f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts 25_C --20

10 MHz Channel Bandwidth, Input Signal 85_C
35 PAR = 9.5 dB @ 0.01% Probability on CCDF --25
Gps, POWER GAIN (dB)

85_C
30 --30
25_C
ACPR (dBc)

25 85_C --40_C --35

TC = --40_C 25_C
20 --40
Gps
15 --45
PAE
10 --50
ACPR
5 --55

0 --60
1 10 50
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 11. WiMAX, ACPR, Power Gain and
Power Added Efficiency versus Output Power

MMRF2004NBR1
RF Device Data
8 Freescale Semiconductor, Inc.
 TYPICAL CHARACTERISTICS

25 0

S21
19 --10

13 --20

S21 (dB)

S11 (dB)
7 --30
S11

1 --40
VDD = 28 Vdc
IDQ1 = 77 mA, IDQ2 = 275 mA
--5 --50
1800 2000 2200 2400 2600 2800 3000 3200 3400
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response

MMRF2004NBR1
RF Device Data
Freescale Semiconductor, Inc. 9
 WIMAX TEST SIGNAL

100 --10

--20 10 MHz
10 Channel BW
Input Signal
--30
1
PROBABILITY (%)

--40
0.1

(dB)
--50
0.01
OFDM 802.16d, 64 QAM 3/4, 4 Bursts --60
0.001 10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability --70
on CCDF
0.0001
0 2 4 6 8 10 --80
ACPR in 1 MHz ACPR in 1 MHz
PEAK--TO--AVERAGE (dB) Integrated BW Integrated BW
--90
Figure 13. OFDM 802.16d Test Signal --20 --15 --10 --5 0 5 10 15 20
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications

MMRF2004NBR1
RF Device Data
10 Freescale Semiconductor, Inc.
 Zo = 50 

f = 2700 MHz

f = 2700 MHz
Zload Zsource
f = 2500 MHz
f = 2500 MHz

VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg.

f Zsource Zload
MHz  
2500 36.381 -- j4.271 5.717 -- j3.618
2525 36.041 -- j3.328 5.624 -- j3.187
2550 35.753 -- j2.363 5.578 -- j2.770
2575 35.516 -- j1.380 5.589 -- j2.412
2600 35.333 -- j0.381 5.586 -- j2.088
2625 35.203 + j0.635 5.579 -- j1.807
2650 35.126 + j1.664 5.552 -- j1.559
2675 35.104 + j2.707 5.564 -- j1.335
2700 35.138 + j3.760 5.568 -- j1.164

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Input Device Output

Matching Under Matching
Network Test Network

Z Z
source load

Figure 15. Series Equivalent Source and Load Impedance

MMRF2004NBR1
RF Device Data
Freescale Semiconductor, Inc. 11
Table 7. Common Source S--Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TA = 25C, 50 Ohm System)
S11 S21 S12 S22
f
MHz |S11|  |S21|  |S12|  |S22| 
1500 0.735 61.0 0.001 --167.6 0.000501 26.6 0.992 167.9
1550 0.729 53.3 0.004 --146.0 0.000361 34.7 0.993 166.3
1600 0.715 46.5 0.014 --146.4 0.000114 109.5 0.991 164.6
1650 0.695 39.8 0.039 --152.5 0.000385 148.4 0.992 162.7
1700 0.665 32.9 0.110 --166.8 0.000773 155.6 0.989 160.5
1750 0.619 25.0 0.299 169.4 0.00134 153.2 0.979 157.8
1800 0.549 15.1 0.708 134.4 0.00198 143.0 0.944 155.2
1850 0.452 2.6 1.335 96.3 0.00250 131.2 0.903 153.9
1900 0.332 --14.4 2.195 62.1 0.00290 121.7 0.879 153.0
1950 0.199 --40.1 3.445 32.7 0.00320 113.8 0.847 151.0
2000 0.089 --91.9 5.724 4.8 0.00345 108.5 0.817 147.7
2050 0.078 167.4 10.041 --26.2 0.00382 107.0 0.749 140.6
2100 0.116 90.3 19.072 --65.1 0.00525 105.3 0.571 125.2
2150 0.170 --13.2 32.642 --126.0 0.00781 77.9 0.054 160.2
2200 0.192 --93.2 31.339 171.3 0.00640 41.0 0.555 --144.4
2250 0.177 --123.0 26.174 130.3 0.00432 24.9 0.726 --160.3
2300 0.163 --132.6 23.605 98.7 0.00294 22.3 0.770 --167.1
2350 0.153 --140.5 22.427 70.0 0.00224 31.0 0.789 --170.1
2400 0.119 --153.6 21.922 41.7 0.00208 42.5 0.800 --171.0
2450 0.059 --165.3 21.172 14.2 0.00216 48.9 0.820 --171.2
2500 0.014 --50.7 20.172 --12.5 0.00227 48.9 0.850 --171.3
2550 0.055 --55.0 19.222 --39.5 0.00213 51.4 0.889 --171.7
2600 0.056 --84.7 17.366 --66.8 0.00209 57.8 0.933 --173.2
2650 0.029 177.4 14.562 --91.5 0.00247 65.6 0.961 --175.8
2700 0.069 103.3 12.199 --111.7 0.00286 62.2 0.968 --178.0
2750 0.122 84.1 10.485 --130.4 0.00308 56.3 0.969 --179.5
2800 0.287 59.8 8.086 --154.4 0.00326 50.9 0.969 179.3
2850 0.184 --5.4 7.102 --152.5 0.00292 39.2 0.966 178.6
2900 0.129 --17.4 6.753 --169.3 0.00256 38.6 0.969 178.0
2950 0.128 --41.0 6.107 175.4 0.00232 38.5 0.970 177.4
3000 0.164 --65.7 5.445 160.8 0.00213 39.9 0.972 176.9
3050 0.223 --86.2 4.867 146.7 0.00196 42.0 0.972 176.4
3100 0.297 --100.4 4.363 133.2 0.00183 46.0 0.973 176.0
3150 0.374 --110.4 3.918 120.0 0.00176 51.4 0.974 175.5
3200 0.447 --118.0 3.534 107.2 0.00181 56.5 0.974 174.9
3250 0.515 --123.4 3.198 95.3 0.00191 60.9 0.975 174.3
3300 0.563 --128.0 2.951 83.3 0.00211 58.8 0.975 173.7
3350 0.619 --131.8 2.761 71.2 0.00206 63.0 0.976 173.0
3400 0.651 --136.0 2.581 58.8 0.00218 64.8 0.975 172.3
3450 0.671 --140.1 2.418 46.0 0.00237 68.3 0.975 171.6
(continued)

MMRF2004NBR1
RF Device Data
12 Freescale Semiconductor, Inc.
Table 7. Common Source S--Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TA = 25C, 50 Ohm System) (continued)
S11 S21 S12 S22
f
MHz |S11|  |S21|  |S12|  |S22| 
3500 0.679 --144.4 2.257 32.6 0.00265 68.5 0.974 171.0
3550 0.677 --147.9 2.054 19.2 0.00280 65.0 0.976 170.5
3600 0.661 --153.5 1.851 5.0 0.00281 67.1 0.976 170.0
3650 0.696 --153.8 1.644 --5.8 0.00328 69.3 0.976 169.6
3700 0.721 --161.3 1.453 --19.4 0.00350 65.8 0.977 169.4
3750 0.737 --168.1 1.243 --32.1 0.00357 64.5 0.978 169.2
3800 0.753 --174.7 1.042 --43.7 0.00374 64.5 0.979 169.2
3850 0.771 179.2 0.859 --54.3 0.00401 62.5 0.980 169.2
3900 0.788 174.4 0.708 --62.8 0.00407 58.4 0.980 169.3
3950 0.812 169.8 0.583 --71.5 0.00416 57.7 0.981 169.3
4000 0.829 166.0 0.477 --79.0 0.00427 55.8 0.982 169.3

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 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS

50 50
P3dB = 45.73 dBm (36 W) Ideal P3dB = 44.46 dBm (35 W) Ideal
48 48

46 P1dB = 45.42 dBm (28 W)

P1dB = 44.61 dBm (29 W)
Pout, OUTPUT POWER (dBm)

Pout, OUTPUT POWER (dBm)

46
44 Actual
44 Actual
42
42
40
40
38
38 36
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA
36 Pulsed CW, 10 sec(on), 10% Duty Cycle, 34 Pulsed CW, 10 sec(on), 10% Duty Cycle,
f = 2500 MHz f = 2700 MHz
34 32
3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V

Test Impedances per Compression Level Test Impedances per Compression Level
Zsource Zload Zsource Zload
   
P1dB 42.7 + j11.6 4.86 -- j1.63 P1dB 39.5 -- j8.7 3.53 -- j1.66

Figure 16. Pulsed CW Output Power Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 2500 MHz versus Input Power @ 28 V @ 2700 MHz

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 PACKAGE DIMENSIONS

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 PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
 AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
 AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Dec. 2013  Initial Release of Data Sheet

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Rev. 0, 12/2013
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