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SEMICONDUCTOR TECHNICAL DATA by MRF186/D

The RF MOSFET Line

  
   

N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this 1.0 GHz, 120 W, 28 V
device make it ideal for large–signal, common source amplifier applications in 28 LATERAL N–CHANNEL
volt base station equipment. BROADBAND
• Guaranteed Performance @ 960 MHz, 28 Volts RF POWER MOSFET
Output Power — 120 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at all Phase Angles with
5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW

CASE 375B–04, STYLE 1

NI–860
ARCHIVED 2005

MAXIMUM RATINGS (2)

Rating Symbol Value Unit
Drain–Source Voltage VDSS 65 Vdc
Drain–Gate Voltage (RGS = 1 MΩ) VDGR 65 Vdc
Gate–Source Voltage VGS ±20 Vdc
Drain Current — Continuous ID 14 Adc
Total Device Dissipation @ TC = 70°C PD 162.5 Watts
Derate above 70°C 1.25 W/°C
Storage Temperature Range Tstg – 65 to +150 °C
Operating Junction Temperature TJ 200 °C

THERMAL CHARACTERISTICS (2)

Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.8 °C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 5

MOTOROLA
 Motorola, RF DEVICE DATA
Inc. 2002
MRF186
1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage V(BR)DSS 65 — — Vdc
(VGS = 0 Vdc, ID = 50 µAdc)
Zero Gate Voltage Drain Current IDSS — — 1 µAdc
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current IGSS — — 1 µAdc
(VGS = 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Quiescent Voltage VGS(th) 2.5 3 4 Vdc
(VDS = 26 Vdc, ID = 300 µAdc Per Side)
Gate Quiescent Voltage VGS(Q) 3.3 4.2 5 Vdc
(VDS = 26 Vdc, ID = 300 mAdc Per Side)
Delta Gate Threshold Voltage (Side to Side) ∆VGS(Q) — — 0.3 Vdc
(VDS = 28 V, ID = 300 mA Per Side)
Drain–Source On–Voltage VDS(on) — 0.58 0.7 Vdc
(VGS = 10 Vdc, ID = 3 Adc Per Side)
Forward Transconductance gfs 2.4 2.8 — S
(VDS = 10 Vdc, ID = 3 Adc Per Side)
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (Per Side) Ciss — 177 — pF
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance (Per Side) Coss — 45 — pF
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
ARCHIVED 2005

Reverse Transfer Capacitance (Per Side) Crss — 3.4 — pF

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) (2)
Two–Tone Common Source Amplifier Power Gain Gps 11 12.2 — dB
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two–Tone Drain Efficiency η 30 35 — %
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion IMD — –32 –28 dBc
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss IRL 9 16 — dB
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two–Tone Common Source Amplifier Power Gain Gps — 12 — dB
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Two–Tone Drain Efficiency η — 33 — %
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
3rd Order Intermodulation Distortion IMD — –32 — dBc
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Input Return Loss IRL — 16 — dB
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Output Mismatch Stress Ψ
No Degradation In Output Power
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 x 400 mA,
Before and After Test
f = 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.

MRF186 MOTOROLA RF DEVICE DATA

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 MRF186





    











   


 












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B1 – B4 Fair Rite Products Short Ferrit Bead, 2743021446 C31 0.8 – 8.0 pF, Variable Capacitor,
C1, C7, C8, C10, Johanson Gigatrim
C16, C17 10 µF, 50 V, Tantalum L1, L2 3 Turns, #20 AWG, IDIA 0.126″, 24.7 nH
C2, C11, C34, C35 0.1 µF, Chip Capacitor N1, N2 Type N Connectors
C3, C6, C12, C15 330 pF, Chip Capacitor R1, R6 1 kΩ, 1/4 W, Carbon Resistor
C4, C5, C13, C14, R2, R5 1.2 kΩ, 0.1 W, Chip Resistor
C19, C20, C32, C33 47 pF, Chip Capacitor R3, R4 75 Ω, 0.1 W, Chip Resistor
C9, C18 250 µF, 50 V, Electrolytic Capacitor Z1 – Z22 Microstrip (See Component Placement)
C21, C22 12 pF, Chip Capacitor Balun1, Balun2,
C23, C30 0.6 – 4.5 pF, Variable Capacitor, Johanson Gigatrim Coax1, Coax2 2.20″ 50 Ω, 0.086″ OD Semi–Rigid Coax
C24, C25, C26 5.1 pF, Chip Capacitor Board 1/32″ Glass Teflon, εr = 2.55
C27, C28 3.9 pF, Chip Capacitor

Figure 1. 930 – 960 MHz Test Circuit Schematic

MOTOROLA RF DEVICE DATA MRF186

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TYPICAL CHARACTERISTICS

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Figure 2. Intermodulation Distortion Products Figure 3. Intermodulation Distortion

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Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Gate Voltage

MRF186 MOTOROLA RF DEVICE DATA

4
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 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

TYPICAL CHARACTERISTICS

 

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ARCHIVED 2005

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Figure 10. DC Safe Operating Area Figure 11. Broadband Circuit Performance

MOTOROLA RF DEVICE DATA MRF186

5
Archived 2005
 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

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ARCHIVED 2005

4    7 4   8  4  " #

f Zin ZOL*
MHz Ω Ω

930 2.5 + j6.9 4.3 + j1.2

945 2.5 + j7.0 4.3 + j1.0

960 2.2 + j7.1 4.3 + j0.9

Zin = Complex conjugate of source impedance.

ZOL* = Conjugate of the optimum load impedance at

a given output power, voltage, IMD, bias current,
efficiency and frequency.

Note: ZOL* was chosen based on tradeoffs between gain, output

power, drain efficiency and intermodulation performance.
Impedances shown represent a single channel
(1/2 of MRF186) impedance measurement.

Figure 12. Series Equivalent Input and Output Impedance

MRF186 MOTOROLA RF DEVICE DATA

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MRF186





Figure 13. Component Placement Diagram of 930 – 960 MHz Broadband Test Fixture

MOTOROLA RF DEVICE DATA MRF186

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Archived 2005
 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

PACKAGE DIMENSIONS

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@@@ -   -  - SEATING CASE 375B–04
PLANE
ISSUE E
NI–860
ARCHIVED 2005

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola
products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture
of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their
respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

E Motorola, Inc. 2002.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447

JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334

Technical Information Center: 1–800–521–6274

HOME PAGE: http://www.motorola.com/semiconductors/

MRF186 MOTOROLA RF DEVICE DATA

8 ◊ MRF186/D
Archived 2005