Fast Suitable For Implementation: M M) G"y
Fast Suitable For Implementation: M M) G"y
Fast Suitable For Implementation: M M) G"y
+
The m 1 bit adder is the only computation cost for the case of m bit
Introduction: A high-speed frequency divider is a key circuit for such
applications as multi-gigabit data communications systems and
modulus p . Thus, the implementation of algorithm MIPF has good
microwave/millimetre-wave wide-bandwidth wireless communica-
features in terms of both timing and area, and is faster and less
tions systems. Both low-power consumption and high-speed operation
expensive compared to the other known methods. The complexities
should be achieved to meet the growing demand for these commu-
of the vanous algorithms are compared in Table 1. The modular inverter
based on algorithm MIPF was successfully implemented for 192-bit nication systems. This is because such systems require sophisticated
functions that are only practicable as circuits when large-scale
prime fields in Verilog hardware description language on a Sun work-
integration is applied. SiGe heterojunction bipolar transistors
station platform, synthesised by the Synopsys Design Compiler with
0.6 pm CMOS technology libraries. A realisation of the EEA was also (HBTs) have already demonstrated high-speed performance, with a
cutoff frequency of 120 GHz [l], an emitter coupled logic (ECL) gate
synthesised at the same condition. The synthesis results are compared
in Table 2. It shows that the VLSI implementation of algorithm MIPF is delay of 5.3 ps [2], and divider toggle frequencies of 72 GHz in static
about 3.7 times faster and 30% smaller than that of the EEA. mode and 92 GHz in dynamic mode [3]. An integrated circuit (IC)
chipset for 40 Gbit/s optical-fibre-link systems has also been fabri-
cated and operation up to 50 Gbit/s has been demonstrated [4, 51. The
Table 1: Comparison of complexity of algorithms parasitic elements, i.e. the junction capacitances and series resis-
I I Space complexity
1 Time complexity
(additions) I
tances, are very small in SiGe HBTs with a self-aligned structure [6],
so SiGe HBTs are inherently suitable for low-power operation.
MIPF One adder O(m) Furthermore, the fabrication of an SiGe HBT is almost completely
EEA Three multipliers and four subtractors compatible with the technology used to fabricate CMOS, so the SiGe
0(mZ)
HBT technology is easily extensible to integration with CMOS [7].
REA One multiplier and one subtractor ob3) This is a further big advantage in terms of improving functionality
and reducing the dissipation of power. In this Letter, we describe a
low-power current-mode-logic (CML) frequency divider IC that
Table 2: Comparison of synthesised modular inverters operated at 40 GHz with a power consumption of 7.9mW per
master-slave flip-flop and operated at 35 GHz from a supply voltage
EEA MIPF
of -2.2 v.
Size (equivalent gates) 27869 19571
.
Highest clock freauencv (MHz)~~ I
25 , 40
Cycles for one inversion computation I 1537 I 673 Characteristics of SiGe HBT: The 0.6 pm-wide SiGe-base and
Number of computations per second 1 16 000 I 59 000 Si-cap multilayer of the SiGe HBT was grown by selective epitaxy.
This process was carried out by an ultra-high vacuum/chemical
vapour deposition system. The collector capacitance and base
Conclusion: Algorithm MIPF presented in this Letter is shown to be resistance were effectively reduced by using a poly-Si assisted
better than other known methods and very suitable for hardware self-aligned selective-epitaxial-growth structure [6]. Shallow-trench
implementation. The algorithm’s VLSI implementation was devel- and deep-trench isolation structures were used to reduce the collec-
oped for kemel computing engines in various applications of high- tor and substrate parasitic capacitances. Four-level interconnects
speed public key cryptosystems. were formed by chemical mechanical polishing. Metal-insulator-