VS-ETX3007-M3

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Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
Base cathode
2 • Hyper fast and soft recovery time
2
• Low forward voltage drop
• 175 °C maximum operating junction temperature
1 • Low leakage current

3
1 3 • True 2 pin package
Cathode Anode
2L TO-220AC • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS

IF(AV) 30 A Ultra low VF, soft-switching hyper fast rectifiers optimized
for discontinuous (critical) mode (DCM) power factor
VR 650 V
correction (PFC). 
VF at IF at 125 °C 1.6 V The minimized conduction loss, optimized stored charge
trr 27 ns and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
TJ max. 175 °C
snubbers.
Package 2L TO-220AC The device is also intended for use as a freewheeling diode
Circuit configuration Single in power supplies and other power switching applications.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage VRRM 650 V
Average rectified forward current IF(AV) TC = 120 °C 30
A
Non-repetitive peak surge current IFSM TC = 25 °C 210
Operating junction and storage temperature TJ, TStg -55 to +175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
VBR,
Breakdown voltage, blocking voltage IR = 250 μA 650 - -
VR
V
IF = 30 A - 2.1 2.5
Forward voltage VF
IF = 30 A, TJ = 125 °C - 1.6 1.7
VR = VR rated - 0.02 30
Reverse leakage current IR μA
TJ = 150 °C, VR = VR rated - 50 300
Junction capacitance CT VR = 200 V - 22 - pF
Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A
TJ = 25 °C dIF/dt = 100 A/μs - 35 -
VR = 30 V
Reverse recovery time trr ns
TJ = 25 °C - 27 -
TJ = 125 °C - 88 -
TJ = 25 °C IF = 30 A - 15 -
Peak recovery current IRRM dIF/dt = 1000 A/μs A
TJ = 125 °C VR = 400 V - 24 -
TJ = 25 °C - 330 -
Reverse recovery charge Qrr nC
TJ = 125 °C - 1350 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance, junction to case RthJC - 1.0 1.3
Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 °C/W
Thermal resistance, case to heat sink RthCS Mounting surface, flat, smooth, and greased - - 0.5
- 0.2 - g
Weight
- 0.07 - oz.
6.0 12 kgf · cm
Mounting torque -
(5.0) (10) (lbf · in)
Maximum junction and storage
TJ, TStg -55 - 175 °C
temperature range
Marking device Case style: 2L TO-220AC ETX3007
IF - Instantaneous Forward Current (A)

100 1000
175 °C
100

TJ = 175 °C 150 °C
10 10
IRM (μA)

1 0.1
25 °C

TJ = 150 °C 0.01
TJ = 25 °C
0.1 0.001
0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700

VF - Forward Voltage Drop (V) VR (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

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1000

CT - Junction Capacitance (pF)

100

10
0 100 200 300 400 500 600 700

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10
ZthJC - Thermal Impedance
Junction to Case (°C/W)

0.50
0.1 0.20
0.10
0.05
0.02
0.01
DC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

180 80
Allowable Case Temperature (°C)

170 RMS limit

70
160
Average Power Loss (W)

150 60

140 50
130
40 D = 0.01
120 D = 0.05
110 DC 30 D = 0.10
D = 0.20
100 20 D = 0.50
90 Square wave (D = 0.50) DC
rated VR applied 10
80
70 0
0 10 20 30 40 50 0 10 20 30 40 50

IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A)

Fig. 5 - Maximum Allowable Case Temperature vs. Fig. 6 - Forward Power Loss Characteristics
Average Forward Current

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130 1400
120
1200
110 125 °C
100 125 °C
1000
90
800

Qrr (nC)
trr (ns)

80
70
25 °C 600
60
50 400
25 °C
40
200
30
20 0
100 1000 100 1000
dIF/dt (A/μs) dIF/dt (A/μs)

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt

(3)
trr
IF
ta tb
0

(4)
Qrr
(2)
IRRM 0.5 IRRM

di(rec)M/dt (5)

0.75 IRRM

(1) diF/dt

(1) diF/dt - rate of change of current (4) Qrr - area under curve defined by trr
through zero crossing and IRRM

trr x IRRM
(2) IRRM - peak reverse recovery current Qrr =
2
(3) trr - reverse recovery time measured
(5) di(rec)M/dt - peak rate of change of
from zero crossing point of negative
current during tb portion of trr
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Fig. 9 - Reverse Recovery Waveform and Definitions

Revision: 06-Apr-18 4 Document Number: 96065

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ORDERING INFORMATION TABLE

Device code VS- E T X 30 07 -M3

1 2 3 4 5 6 7

1 - Vishay Semiconductors product

2 - E = single diode
3 - Package:
T = TO-220AC
4 - X = hyper fast recovery
5 - Current rating (30 = 30 A)
6 - Voltage rating (07 = 650 V)
7 - Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-ETX3007-M3 50 1000 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?96156
Part marking information www.vishay.com/doc?95391
SPICE model www.vishay.com/doc?96532

Revision: 06-Apr-18 5 Document Number: 96065

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 Outline Dimensions
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2L TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
(6) A plane
E ØP A A Thermal pad
E2 (7) 0.014 M B A M A1 E

Q
(6)
H1 H1
(7)
D2 (6)
(6) D Detail B

D1

1 2

(2) L1 C
E1 (6)
(b, b2) Plating
1 2 Base metal
L D D
L1 (2)
C C c c1 (4)

c A (4)
2 x b 2 x b2 b1, b3
e1
Detail B A2 View A - A Section C - C and D - D
0.015 M B A M

MILLIMETERS INCHES MILLIMETERS INCHES

SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 ØP 3.54 3.73 0.139 0.147
c1 0.36 0.56 0.014 0.022 4 Q 2.60 3.00 0.102 0.118
D 14.85 15.25 0.585 0.600 3
D1 8.38 9.02 0.330 0.355
D2 11.68 12.88 0.460 0.507 6
E 10.11 10.51 0.398 0.414 3, 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480".

Revision: 06-Dec-17 1 Document Number: 96069

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 Legal Disclaimer Notice
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Revision: 08-Feb-17 1 Document Number: 91000