VS-E5TH1512S2LHM3

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Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt® G5
FEATURES
Base
cathode • Hyperfast and optimized Qrr
4
• Best in class forward voltage drop and switching
losses trade off
• Optimized for high speed operation
• 175 °C maximum operating junction temperature
1 3 • Polyimide passivation
N/C Anode
D2PAK 2L (TO-263AB 2L)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
PRIMARY CHARACTERISTICS please see www.vishay.com/doc?99912
IF(AV) 15 A
VR 1200 V DESCRIPTION / APPLICATIONS
VF at IF at 125 °C 1.7 V Featuring a unique combination of low conduction and
trr 37 ns switching losses, this rectifier is the right choice for high
TJ max. 175 °C frequency converters, both soft switched / resonant.
Package D2PAK 2L (TO-263AB 2L) Specifically designed to improve efficiency of PFC and
Circuit configuration Single output rectification stages of EV / HEV battery charging
stations, booster stage of solar inverters and UPS
applications, these devices are perfectly matched to
operate with MOSFETs or high speed IGBTs.

MECHANICAL DATA
Case: D2PAK 2L (TO-263AB 2L)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per
J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage VRRM 1200 V
Average rectified forward current IF(AV) TC = 110 °C, D = 0.50 15
Repetitive peak forward current IFRM TC = 110 °C, D = 0.50, f = 20 kHz 30 A
Non-repetitive peak surge current IFSM TC = 45 °C, tp = 10 ms, sine wave 125
Operating junction and storage temperature TJ, TStg -55 to +175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
VBR,
Breakdown voltage, blocking voltage IR = 100 μA 1200 - -
VR
V
IF = 15 A - 1.9 2.5
Forward voltage VF
IF = 15 A, TJ = 125 °C - 1.7 -
VR = VR rated - - 50
Reverse leakage current IR μA
TJ = 125 °C, VR = VR rated - - 500
Junction capacitance CT VR = 200 V - 10 - pF
Series inductance LS Measured to lead 5 mm from package body - 8 - nH

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 37 -
Reverse recovery time trr TJ = 25 °C - 95 -
ns
TJ = 125 °C - 146 -
TJ = 25 °C IF = 10 A - 14 -
Peak recovery current IRRM dIF/dt = 600 A/μs A
TJ = 125 °C VR = 400 V - 19 -
TJ = 25 °C - 545 -
Reverse recovery charge Qrr nC
TJ = 125 °C - 1200 -
TJ = 25 °C - 75.5 -
Reverse recovery time trr ns
TJ = 125 °C - 100 -
TJ = 25 °C IF = 15 A - 23 -
Peak recovery current IRRM dIF/dt = 1000 A/μs A
TJ = 125 °C VR = 800 V - 35 -
TJ = 25 °C - 935 -
Reverse recovery charge Qrr nC
TJ = 125 °C - 1985 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance, junction-to-case RthJC - - 1.7 °C/W
- 2.0 - g
Weight
- 0.07 - oz.
6.0 12 kgf · cm
Mounting torque -
(5.0) (10) (lbf · in)
Maximum junction and storage temperature range TJ, TStg -55 - 175 °C
Marking device Case style D2PAK 2L (TO-263AB 2L) E5TH1512SH
IF - Instantaneous Forward Current (A)

100 1000
TJ = 175 °C
IR - Reverse Current (µA)

100 TJ = 150 °C

10
TJ = 175 °C TJ = 125 °C
10

TJ = 125 °C 1
1 TJ = 25 °C
TJ = 25 °C

0.1

0.1 0.01
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200
VF - Forward Voltage Drop (V) VR - Reverse Voltage (V)

Fig. 1 - Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

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Allowable Solder Pad Temperature (°C)

100 180
CT - Junction Capacitance (pF)

170
160
150 DC
140
10 130
120
110
100 Square wave (D = 0.50)
rated VR applied
90
1 80
0 200 400 600 800 1000 1200 0 2 4 6 8 10 12 14 16
VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current

50
45 RMS limit
Average Power Loss (W)

40
35
30
25 D= 0.10
D = 0.20
20 D = 0.25
15 D = 0.33
D = 0.50
10 D = 0.75
DC
5
0
0 5 10 15 20 25

IF(AV) - Average Forward Current (A)

Fig. 5 - Forward Power Loss Characteristics

10
ZthJC - Thermal Impedance
Junction to Case (°C/W)

0.1 0.75
0.50
0.33
0.25
0.01 0.2
DC
0.1

0.001
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)

Fig. 6 - Transient Thermal Impedance, Junction to Case

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300 2500

250
2000
10 A, 400 V 15 A, 800 V
200
1500

Qrr (nC)
trr (ns)

150

15 A, 800 V 1000
10 A, 400 V
100

500 TJ = 125 °C
50 TJ = 125 °C

0 0
100 1000 100 1000

dIF/dt (A/µs) dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt

40

35 TJ = 125 °C

30

25
15 A, 800 V
20
Irec (A)

15

10
10 A, 400 V
5

0
100 1000

dIF/dt (A/µs)
Fig. 9 - Typical Stored Charge vs. dIF/dt

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(3)
trr

ta tb

IF
t0 t10 %
0
0.1 IRRM
(2)
IRRM Qrr (4)

di(rec)M/dt (5)

(1) diF/dt
Fig. 10 - Reverse Recovery Waveform and Definitions

Notes
(1) diF/dt - rate of change of current through zero crossing
(2) I
RRM - peak reverse recovery current
(3) t - reverse recovery time measured from t , crossing point of negative going I , to point t
rr 0 F 10%, 0.1 IRRM
(4) Q - area under curve defined by t and t
rr 0 10 %
t 10 %

Q rr =  I ( t ) dt
t0
(5) di(rec)M/dt - peak rate of change of current during tb portion of trr

ORDERING INFORMATION TABLE

Device code VS- E 5 T H 15 12 S2 L H M3

1 2 3 4 5 6 7 8 9 10 11

1 - Vishay Semiconductors product

2 - E = single diode
3 - 5 = FRED generation 5
4 - Package:
4 T = TO-263 / D2PAK package
5 - H = hyperfast recovery
6 - Current rating (15 = 15 A)
7 - Voltage rating (12 = 1200 V)
8 - S2 = true 2 pin D2PAK
9 - None = tube (50 pieces)
• L = tape and reel (left oriented, for D2PAK package)
If needed different orientation/packaging, please contact factory
10 - H = AEC-Q101 qualified
11 - Environmental digit:
M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free

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ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-E5TH1512S2LHM3 800 800 13" diameter reel

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?96683
Part marking information www.vishay.com/doc?96693
Packaging information www.vishay.com/doc?95032

Revision: 02-Mar-2021 6 Document Number: 96808

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 Outline Dimensions
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2L-D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220) B
A Pad layout
(2)(3) A (E)
c2 11.00
E MIN.
(0.43)
A
(3) L1 4
9.65
MIN.
(D1) (3) (0.38)

Detail A
D 17.90 (0.70)
H 15.00 (0.625)
(2)
1 3
3.81
MIN.
(0.15)
B B 2.32
MIN.
(0.08)
A
E1 (3) 2.64 (0.103)
2 x b2 C 2.41 (0.096)
c
View A - A
2xb
0.010 M A M B ± 0.004 M B Base
Plating (4) Metal
2x e H b1, b3
Gauge
plane
(c) c1 (4)
0° to 8° B
Seating
plane
Lead tip L3 A1
L (b, b2)
L4 Section B - B and C - C
Detail “A” Scale: None
Rotated 90 °CW
Scale: 8:1

MILLIMETERS INCHES MILLIMETERS INCHES

SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L3 0.25 BSC 0.010 BSC
c2 1.14 1.65 0.045 0.065 L4 4.78 5.28 0.188 0.208
D 8.51 9.65 0.335 0.380 2
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB

Revision: 30-Nov-2020 1 Document Number: 96683

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