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    Ex5 2 PDF

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    Sushant Sharma
    This document provides information about calculating the emitter efficiency, base transport factor, and current gain of a pnp bipolar transistor. It gives the doping concentrations and carrier lifetimes/mobilities for the emitter and base. The calculations show that the emitter efficiency is 99.4%, the base transport factor is 99.92%, resulting in an overall current gain of 147.5.

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    Ex5 2 PDF

    Uploaded by

    Sushant Sharma
    42 views1 page
    This document provides information about calculating the emitter efficiency, base transport factor, and current gain of a pnp bipolar transistor. It gives the doping concentrations and carrier lifetimes/mobilities for the emitter and base. The calculations show that the emitter efficiency is 99.4%, the base transport factor is 99.92%, resulting in an overall current gain of 147.5.

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    This document provides information about calculating the emitter efficiency, base transport factor, and current gain of a pnp bipolar transistor. It gives the doping concentrations and carrier lifetimes/mobilities for the emitter and base. The calculations show that the emitter efficiency is 99.4%, the base transport factor is 99.92%, resulting in an overall current gain of 147.5.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    42 views1 page

    Ex5 2 PDF

    Uploaded by

    Sushant Sharma
    This document provides information about calculating the emitter efficiency, base transport factor, and current gain of a pnp bipolar transistor. It gives the doping concentrations and carrier lifetimes/mobilities for the emitter and base. The calculations show that the emitter efficiency is 99.4%, the base transport factor is 99.92%, resulting in an overall current gain of 147.5.

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    Example 5.

    2 Consider a pnp bipolar transistor with emitter doping of 1018 cm-3


    and base doping of 1017 cm-3 . The quasi-neutral region width in
    the emitter is 1 µm and 0.2 µm in the base. Use µn = 1000 cm2 /V-s
    and µp = 300 cm2 /V-s . The minority carrier lifetime in the base is
    10 ns.
    Calculate the emitter efficiency, the base transport factor, and the
    current gain of the transistor biased in the forward active mode.
    Assume there is no recombination in the depletion region.
    Solution The emitter efficiency is obtained from:
    1
    γE = = 0.994
    D p, E N B wB'
    1+
    Dn, B N E wE'
    The base transport factor equals:
    2
    w'B
    αT = 1 − = 0.9992
    2Dn, Bτ n

    The current gain then becomes:


    α
    β= = 147.5
    1− α
    where the transport factor, α, was calculated as the product of the
    emitter efficiency and the base transport factor:
    α = γ E α T = 0.994 × 0.9992 = 0.993

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