Scribd Logo
Upload

Welcome to Scribd!

  • 50 views

    NTE2511 (NPN) & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output For HDTV

    Uploaded by

    Eliezer Coronel
    The NTE2511 and NTE2512 are silicon complementary transistors designed for high frequency video output applications such as very high-definition CRT displays and color TV chroma output. They have a high gain bandwidth product of 800MHz and low reverse transfer capacitances of 2.9pF and 4.6pF, making them suitable for applications requiring excellent high frequency response such as HDTV. The document provides key electrical characteristics and ratings for the transistors such as maximum voltages, currents, and power dissipation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    NTE2511 (NPN) & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output For HDTV

    Uploaded by

    Eliezer Coronel
    50 views2 pages
    The NTE2511 and NTE2512 are silicon complementary transistors designed for high frequency video output applications such as very high-definition CRT displays and color TV chroma output. They have a high gain bandwidth product of 800MHz and low reverse transfer capacitances of 2.9pF and 4.6pF, making them suitable for applications requiring excellent high frequency response such as HDTV. The document provides key electrical characteristics and ratings for the transistors such as maximum voltages, currents, and power dissipation.

    Original Description:

    Datashet

    Original Title

    Nte 2511

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The NTE2511 and NTE2512 are silicon complementary transistors designed for high frequency video output applications such as very high-definition CRT displays and color TV chroma output. They have a high gain bandwidth product of 800MHz and low reverse transfer capacitances of 2.9pF and 4.6pF, making them suitable for applications requiring excellent high frequency response such as HDTV. The document provides key electrical characteristics and ratings for the transistors such as maximum voltages, currents, and power dissipation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    50 views2 pages

    NTE2511 (NPN) & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output For HDTV

    Uploaded by

    Eliezer Coronel
    The NTE2511 and NTE2512 are silicon complementary transistors designed for high frequency video output applications such as very high-definition CRT displays and color TV chroma output. They have a high gain bandwidth product of 800MHz and low reverse transfer capacitances of 2.9pF and 4.6pF, making them suitable for applications requiring excellent high frequency response such as HDTV. The document provides key electrical characteristics and ratings for the transistors such as maximum voltages, currents, and power dissipation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 2

    NTE2511 (NPN) & NTE2512 (PNP)

    Silicon Complementary Transistors


    High Frequency Video Output for HDTV

    Features:
    D High Gain Bandwidth Product: fT = 800MHz Typ.
    D Low Reverse Transfer Capacitance and Excellent HF Response:
    NTE2511: Cre = 2.9pF
    NTE2512: Cre = 4.6pF

    Applications:
    D Very High–Definition CRT Display
    D Video Output
    D Color TV Chroma Output
    D Wide–Band Amp

    Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
    Emitter base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
    Collector Power Dissipation, PC
    TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
    TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

    Electrical Characteristics: (TA = +25°C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector Cutoff Current ICBO VCB = 60V, IE = 0 – – 0.1 µA
    Emitter Cutoff Current IEBO VEB = 2V, IC = 0 – – 1.0 µA
    DC Current Gain hFE VCE = 10V, IC = 50mA 100 – 320
    VCE = 10V, IC = 400mA 20 – –
    Gain Bandwidth Product fT VCE = 10V, IC = 100mA – 800 – MHz
    Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector Emitter Saturation Voltage VCE(sat)
    NTE2511 IC = 100mA, IB = 10mA – – 0.6 V
    NTE2512 – – 0.8 V
    Base Emitter Saturation Voltage VBE(sat) IC = 100mA, IB = 10mA – – 1.0 V
    Collector Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 80 – – V
    Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 60 – – V
    Emitter Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 4 – – V
    Output Capacitance Cob
    NTE2511 VCB = 30V, f = 1MHz – 3.4 – pF
    NTE2512 – 5.2 – pF
    Reverse Transfer Capacitance Cre
    NTE2511 VCB = 30V, f = 1MHz – 2.9 – pF
    NTE2512 – 4.6 – pF

    .330 (8.38)
    Max

    .175
    (4.45)
    .450 Max
    (11.4)
    Max

    .118 (3.0)
    Dia

    .655
    (16.6)
    Max
    .030 (.762) Dia

    E C B

    .090 (2.28)

    .130 (3.3)
    Max

    You might also like