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    Nte 2363

    Uploaded by

    Manuel Martinez
    This document provides specifications for the NTE2363 and NTE2364 silicon complementary transistors which are suitable for high current applications such as power supplies, relay drivers, and lamp drivers. The transistors have low saturation voltage and large current capacity. Key specifications listed include maximum ratings for voltage, current, and power as well as typical electrical characteristics such as current gain, gain bandwidth, saturation voltage, and breakdown voltages. Dimensional drawings of the packaging are also provided.

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    © All Rights Reserved
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    Nte 2363

    Uploaded by

    Manuel Martinez
    79 views2 pages
    This document provides specifications for the NTE2363 and NTE2364 silicon complementary transistors which are suitable for high current applications such as power supplies, relay drivers, and lamp drivers. The transistors have low saturation voltage and large current capacity. Key specifications listed include maximum ratings for voltage, current, and power as well as typical electrical characteristics such as current gain, gain bandwidth, saturation voltage, and breakdown voltages. Dimensional drawings of the packaging are also provided.

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    This document provides specifications for the NTE2363 and NTE2364 silicon complementary transistors which are suitable for high current applications such as power supplies, relay drivers, and lamp drivers. The transistors have low saturation voltage and large current capacity. Key specifications listed include maximum ratings for voltage, current, and power as well as typical electrical characteristics such as current gain, gain bandwidth, saturation voltage, and breakdown voltages. Dimensional drawings of the packaging are also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    79 views2 pages

    Nte 2363

    Uploaded by

    Manuel Martinez
    This document provides specifications for the NTE2363 and NTE2364 silicon complementary transistors which are suitable for high current applications such as power supplies, relay drivers, and lamp drivers. The transistors have low saturation voltage and large current capacity. Key specifications listed include maximum ratings for voltage, current, and power as well as typical electrical characteristics such as current gain, gain bandwidth, saturation voltage, and breakdown voltages. Dimensional drawings of the packaging are also provided.

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    © All Rights Reserved
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    NTE2363 (NPN) & NTE2364 (PNP)

    Silicon Complementary Transistors


    High Current General Purpose Amp/Switch

    Features:
    D Low Saturation Voltage
    D Large Current Capacity and Wide ASO

    Applications:
    D Power Supplies
    D Relay Drivers
    D Lamp Drivers
    D Automotive Wiring

    Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
    Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
    Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
    Allowable Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
    Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
    Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
    Note 1 For PNP device (NTE2364), voltage and current values are negative.

    Electrical Characteristics: (TA = +25°C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector Cutoff Current ICBO VCB = 50V, IE = 0 − − 0.1 μA
    Emitter Cutoff Current IEBO VEB = 4V, IC = 0 − − 0.1 μA
    DC Current Gain hFE (1) VCE = 2V, IC = 100mA 140 − 280
    hFE (2) VCE = 2V, IC = 1.5A 40 − −
    Gain Bandwidth Product fT VCE = 10V, IC = 50mA − 150 − MHz
    Rev. 8−10
    Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    Output Capacitance
    NTE2363 cob VCB = 10V, f = 1MHz − 12 − pF
    NTE2364 − 22 − pF
    Collector−Emitter Saturation Voltage
    NTE2363 VCE(sat) IC = 1A, IB = 50mA − 0.15 0.4 V
    NTE2364 − 0.3 0.7 V
    Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 50mA − 0.9 1.2 V
    Collector−Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 60 − − V
    Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 50 − − V
    Emitter−Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 6 − − V

    .343
    (8.73)
    Max

    .492
    (12.5)
    Min
    .024 (0.62) Max

    E C B

    .102 (2.6) Max


    .059 (1.5) Typ

    .018 (0.48)

    .118 (3.0) Max .197 (5.0)

    .236 (6.0)Dia Max .102 (2.6) Max

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