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    TIP122

    Uploaded by

    Nacho Gonzalez
    The TIP122 is a silicon NPN Darlington transistor in a TO-220 package for power amplification and low-speed switching. It has a high current gain of 2500, can withstand collector-emitter voltages up to 100V, and has low saturation voltages below 4V for currents up to 5A. It has maximum ratings for current, voltage, power dissipation, and operating temperature range.

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    © All Rights Reserved
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    TIP122

    Uploaded by

    Nacho Gonzalez
    11 views2 pages
    The TIP122 is a silicon NPN Darlington transistor in a TO-220 package for power amplification and low-speed switching. It has a high current gain of 2500, can withstand collector-emitter voltages up to 100V, and has low saturation voltages below 4V for currents up to 5A. It has maximum ratings for current, voltage, power dissipation, and operating temperature range.

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    © © All Rights Reserved

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    The TIP122 is a silicon NPN Darlington transistor in a TO-220 package for power amplification and low-speed switching. It has a high current gain of 2500, can withstand collector-emitter voltages up to 100V, and has low saturation voltages below 4V for currents up to 5A. It has maximum ratings for current, voltage, power dissipation, and operating temperature range.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views2 pages

    TIP122

    Uploaded by

    Nacho Gonzalez
    The TIP122 is a silicon NPN Darlington transistor in a TO-220 package for power amplification and low-speed switching. It has a high current gain of 2500, can withstand collector-emitter voltages up to 100V, and has low saturation voltages below 4V for currents up to 5A. It has maximum ratings for current, voltage, power dissipation, and operating temperature range.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    TIP122

    Silicon NPN Transistor


    Darlington Power Amp, Switch
    TO−220 Type Package

    Description:
    The TIP122 is a silicon NPN Darlington transistor in a TO−220 type package designed for general
    purpose amplifier and low−speed switching applications.

    Features:
    D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A
    D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 100mA
    D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2.0V (Max) at IC = 3A
    Low Collector−Emitter Saturation Voltage: VCE(sat) = 4.0V (Max) at IC = 5A

    Absolute Maximum Ratings: (Note 1)


    Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
    Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
    Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
    Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
    Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
    Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C
    Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W
    Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C
    Unclamped Inductive Load Energy (Note 2), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mJ
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
    Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W
    Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
    Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the
    device. If any of these limits are exceeded, device functionality should not be assumed, dam-
    ages may occur and reliability may be affected.
    Note 2. IC = 1A, L = 100mH, P.R.F. = 10Hz, VCC = 20V, RBE = 100.
    Electrical Characteristics: (TC = +25C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    OFF Characteristics
    Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 3 100 − − V
    Collector Cutoff Current ICBO VCB = 100V, IE = 0 − − 0.2 mA
    ICEO VCE = 50V, IB = 0 − − 0.5 mA
    Emitter Cutoff Current IEBO VBE = 5V, IC = 0 − − 2 mA
    ON Characteristics (Note 3)
    DC Current Gain hFE VCE = 3V, IC = 500mA 1000 − −
    VCE = 3V, IC = 3A 1000 − −
    Collector−Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 12mA − − 2.0 V
    IC = 5A, IB = 20mA − − 4.0 V
    Base−Emitter On Voltage VBE(on) IC = 3A, VCE = 3V − − 2.5 V
    Dynamic Characteristics
    Small−Signal Current Gain hfe IC = 3A, VCE = 4V, f = 1MHz 4.0 − −
    Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz − − 200 pF

    Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%.

    C
    B
    .420 (10.67)
    Max

    E .110 (2.79)

    .147 (3.75) .500


    Dia Max (12.7)
    Max

    .250 (6.35)
    Max

    .500
    (12.7)
    Min
    .070 (1.78) Max

    Base Emitter

    .100 (2.54) Collector/Tab

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