MEMs – Actuators

ROCHESTER INSTITUTE OF TEHNOLOGY

MICROELECTRONIC ENGINEERING

Microelectromechanical Systems (MEMS)

Actuators
Dr. Lynn Fuller and Dr. Ivan Puchades
Webpage: http://people.rit.edu/lffeee
Microelectronic Engineering
Rochester Institute of Technology
82 Lomb Memorial Drive
Rochester, NY 14623-5604
Tel (585) 475-2035
Email: Lynn.Fuller@rit.edu
MicroE Dept Webpage: http://www.rit.edu/kgcoe/microelectronic

Rochester Institute of Technology October 31, 2016 MEM_Actuators.ppt

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 1

 MEMs – Actuators

INTRODUCTION
Actuators
Thermal
Two beam heated cantilever
Polyimide on Heaters
Bimetalic
heaters on diaphragms
Electrostatic
Capacitor Plate Drive
Comb Drive
Other
Electromagnetic
Peizoelectric

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 2

 MEMs – Actuators

OUTLINE

Polycrystalline Silicon Thermal Actuators

Chevron Actuators
Heated Diaphragm Actuators
Heated Polyimide Cantilever Mirrors
Polyimide Thermal Actuators
A Walking Silicon Micro-Robot
Thermal Mirrors
Electrostatic Force
Digital Light Projection
Electrostatic Impact-Drive Microactuator
Shuffle Motor
Electrostatic Comb Drive
Magnetic Actuators on a Diaphragm

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 3

 MEMs – Actuators

POLYCRYSTALLINE SILICON THERMAL ACTUATORS

Polycrystalline Silicon Thermal

Actuators Integrated with Photodetector
Position Sensors

Kevin Munger

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 4

 MEMs – Actuators

POLYCRYSTALLINE SILICON THERMAL ACTUATORS

No current flow

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 5

 MEMs – Actuators

POLYCRYSTALLINE SILICON THERMAL ACTUATORS

Current flow

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 6

 MEMs – Actuators

SELECTED MATERIAL PROPERTIES

Thermal Young’s Thermal Density
Expansion Modulus Conductivity
ppm/°C 1012 dyne/cm2 w/cmK gm/cm3
Silicone Elastomers 275-300
Unfilled Epoxies 100-200 0.015
Filled Epoxies 50-125
Aluminum 20-25 0.68 2.36 2.7
Copper 15-20 1.20 3.98 8.96
Gold 14.2 0.785 3.19 19.3
Silicon (single crystal) 2.4 1.9 1.9 2.33
Poly Silicon 2.4 1.5 1.5 2.33
Inconel 2.4
Nickel-Iron 1.22
Alumina Ceramic 6.3
Borosilicate Glass 5.0
Silicon Dioxide 0.55 0.73 0.014 2.19
Silicon Nitride 0.8 3.85 0.185 3.44
Diamond 1.0 11 20
Air -
Rochester Institute of Technology
- 0.00026
Water - 10 dyne/cm2 = 1 newton/m
Microelectronic Engineering - 2 0.0061
© October 31, 2016 Dr. Lynn Fuller Page 7
 MEMs – Actuators

THERMAL EXPANSION

1. How much will a 500 um long bar of aluminum expand if it is

heated 200 C above ambient?
DL/L = 22 ppm/C
= 22 x 200 = 4400 ppm = 4400E-6
DL = 4400E-6 x 500 um = 2.2 um

2. If the hot arm on a 200µm Si actuator is 400C hotter than the cold
arm how much longer will it be ?
DL/L = 2.4 ppm/C
= 2.4 x 400 = 932 ppm = 960E-6
DL = 960E-6 x 200 um = 0.192 um
Rochester Institute of Technology
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 8

 MEMs – Actuators

FINITE ELEMENT ANALYSIS OF THERMAL BENDING

Small arm 400 C, 10um X 200 um

Large arm 0 C, 30 um x 200 um
Maximum Displacement = 0.12 um
Rochester Institute of Technology
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 9

 MEMs – Actuators

FEA SIMULATION

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 10

 MEMs – Actuators

INTEGRATION OF PHOTODIODE AND MEMS

December 2001
Kevin Munger. joined
IBM Burlington, VT

Thermal Actuator with

Integrated Photodiode

Maximum Deflection 9 µm at 30 µw
Rochester Institute of Technology
162,000 cycles, 6 msec.,
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 11

 MEMs – Actuators

POLYCRYSTALLINE SILICON THERMAL ACTUATORS

Summary
These devices give large mechanical motion
on the order of several to few 10’s of micrometers

These devices are analog

Integrated with analog photodiode position detection

can give feedback for accurate position

Cycle fatigue seems to be infinite

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 12

 MEMs – Actuators

CHEVRON ACTUATOR

10° Angle 1000um

Thermal Expansion for Si is 2.33E-6/°C

Current flow causes heating and movement

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 13

 MEMs – Actuators

CHEVRON ACTUATOR

10° Angle 1000um

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 14

 MEMs – Actuators

MODIFIED BULK PROCESS FOR MEMS CLASS 2004-06

Movie
Thermopile Accelerometer

Speaker
Inductor
Rochester Institute of Technology
Microelectronic Engineering
Pressure Sensor
© October 31, 2016 Dr. Lynn Fuller Page 15
 MEMs – Actuators

DIAPHRAGM

diaphragm
Diaphragm: thickness ()

Displacement Radius (R)

Uniform Pressure (P)

Displacement (y)

Equation for deflection at center of diaphragm

3PR 4[(1/)2-1]
4 2-1]
y= = (249.979)PR2 [(1/)
16E(1/)23 E(1/) 
3

 = Poisson’s Ratio
*The second equation corrects all units
E = Young’s Modulus, assuming that pressure is mmHg,
radius and diaphragm is m, Young’s
for Aluminum  =0.35 Modulus is dynes/cm2, and the
Rochester Institute of Technology calculated displacement found is m.
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 16

 MEMs – Actuators

SELECTED MATERIAL PROPERTIES

Thermal Young’s Thermal Density
Expansion Modulus Conductivity
ppm/°C 1012 dyne/cm2 w/cmK gm/cm3
Silicone Elastomers 275-300
Unfilled Epoxies 100-200 0.015
Filled Epoxies 50-125
Aluminum 20-25 0.68 2.36 2.7
Copper 15-20 1.20 3.98 8.96
Gold 14.2 0.785 3.19 19.3
Silicon (single crystal) 2.4 1.9 1.9 2.33
Poly Silicon 2.4 1.5 1.5 2.33
Inconel 2.4
Nickel-Iron 1.22
Alumina Ceramic 6.3
Borosilicate Glass 5.0
Silicon Dioxide 0.55 0.73 0.014 2.19
Silicon Nitride 0.8 3.85 0.185 3.44
Diamond 1.0 11 20
Air -
Rochester Institute of Technology
- 0.00026
Water - 10 dyne/cm2 = 1 newton/m
Microelectronic Engineering - 2 0.0061
© October 31, 2016 Dr. Lynn Fuller Page 17
 MEMs – Actuators

CALCULATOR FOR DIAPHRAGM DEFLECTIONS

Rochester Institute of Technology 5-Apr-06
Dr. Lynn Fuller Microelectronic Engineering, 82 Lomb Memorial Dr., Rochester, NY 14623

Deflection Ymax = 0.0151 P L 4(1-Nu2)/EH3 Ymax = 0.17 µm

P = Pressure P= 15 lbs/in2
L = Length of side of square diaphragm L= 1000 µm
E = Youngs Modulus E= 1.90E+11 N/m2
Nu = Poissons Ratio Nu = 0.32
H = Diaphragm Thickness H= 35 µm
P= 1.03E+05 Pascal

Stress = 0.3 P (L/H)2 (at center of each edge) Stress = 2.53E+07 Pascal
P = Pressure Yield Strength = 1.20E+10 Pascal
L = Square Diaphragm Side Length
H = Diaphragm Thickness

Capacitance = eoer Area/d C= 7.97E-11 F

eo = Permitivitty of free space = 8.85E-14 F/cm
er = relative permitivitty = 1 for air Area = 9.00E-02 cm2
Area = area of plates x number of plates N= 1
d = distance between plates d= 1 µm
If round plates, Diameter = 0 µm
If square plates, Side = 3000 µm

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 18

 MEMs – Actuators

CALCULATOR FOR DIAPHRAGM DEFLECTIONS

Rochester Institute of Technology 11-Feb-14
Dr. Lynn Fuller Microelectronic Engineering, 82 Lomb Memorial Dr., Rochester, NY 14623

To use this spread sheet enter values in the white boxes. The rest of the sheet is protected and should not be
changed unless you are sure of the consequences. The results are displayed in the purple boxes.

Diaphragm
Deflection Ymax = 0.0151 P L 4(1-Nu2)/EH3 Ymax = 9.44E-03 µm
P = Pressure P= 1.50E-05 lbs/in2
L = Length of side of square diaphragm
E = Youngs Modulus
Nu = Poissons Ratio
H = Diaphragm Thickness
L=
E=
Nu =
H=
P=
20000
1.90E+11
0.32
50
1.03E-01
µm
N/m2

µm
Pascal
Deflection for given pressure
Diaphragm
Stress = 0.3 P (L/H)2 (at center of each edge) Stress = 4.96E+03 Pascal
P = Pressure Yield Strength = 1.20E+10 Pascal
L = Square Diaphragm Side Length
H = Diaphragm Thickness 1N/m2 = 1Pascal = 10dyne/cm2

Stress at edge of diaphragm

Two Parallel Plates
Capacitance = eoer Area/d C= 5.5549E-11 F
eo = Permitivitty of free space = 8.85E-14 F/cm
er = relative permitivitty = 1 for air Area = 3.14E+00 cm2
Area = area of plates x number of plates N= 1
d = distance between plates d= 50.026 µm
If round plates, Diameter = 20000 µm
If square plates, Side = 0 µm
Capacitance Change for Ymax Deflection = 1.05E-14 F
Two Parallel Plates
Electrostatic Force= eoer Area V 2/2d2 Felec = 1.39E-05 N
V = applied voltage
Single Plate
Pressure Force = Pressure x Area
V=

Fpress =
5 volts

4.14E-05 N
Electrostatic equivalent pressure
Single Plate with a Coil in a Magnetic Field Approximate Equation 1
Electromagnetic Force = I L B Fmagnetic = 1.88E-03 N
Assuming a constant field strength B from a Rmax of Coil = 1000 µm
permanent magnet then, Lorentz Force = I L B Rmin of Coil = 500 µm
where I is the current in a coil of length L, Number of turns (N) = 40 turns
L =~ 2 pi Rave x N, Rave = (Rmax+Rmin)/2 Length of coil (L) = 1.88E-01 m
Current (I) =
Magnet Field Strength (B) =
Single Plate with a Coil in a Magnetic Field Approximate Equation
Electromagnetic Force =
2
0.02
0.5
amperes
Tesla
Magnetic equivalent pressure
distance between magnet and coil = 300 µm
radius of coil = 750 µm
radius of magnet = 2000 µm
Fmagnetic = 3.70E+00 N

Dd is diameter or length of diaphragm

Cheng eq. 6-196

Resonant Frequency of Round or Square Diaphragm =

Dd = 3 mm
Resonant frequency
Ey is youngs modulus Ey = 1.9 x1012 dynes/cm2
Td is diaphragm thickness Td = 20 µm
Nu is Poisons ratio Nu = 0.32
Rho is volumn density Rho = 2.33 gm/cm3
fo is 1st resonant frequency for round fo = 39559 Hz
fo is 1st resonant frequency for square fo = 35999 Hz
Diaphragm Volumn =
Diaphragm Mass =
AddedBio Mass =
Delta Rho =
0.0001413
3.E-04

2.83086E-05
4
cm-3
gm
gm x 10-9
gm/cm3
Piezoresistive bridge calculations
Delta fo = 0 Hz

Resistive Bridge Output

Rochester Institute ofRhos
Film Sheet Resistance
Resistor Length
Technology
=
L=
61 ohms/sq
350 um

Microelectronic Engineering
Resistor Width W=
Nominal Resistor Value R=Rs L/W
R=
50 um
427 ohms
Strain = Stress/Youngs Modulus e= 0.000 %

© October 31, 2016 Dr. Lynn Fuller Page 19

 MEMs – Actuators

ANSYS FINITE ELEMENT ANALYSIS

Regular Si Diaphragm Corrugated Diaphragm

Layer 2: 1.5mm x 1.5mm Polysilicon 1μm thick

2mm x 2mm diaphragm 30µm thick, 50 psi applied

Rochester Institute of Technology
Microelectronic Engineering Rob Manley, 2005
© October 31, 2016 Dr. Lynn Fuller Page 20
 MEMs – Actuators

DIAPHRAGM DEFORMATION MOVIE

200µm

Rochester Institute of Technology

Rob Manley, 2005
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 21

 MEMs – Actuators

PICTURES OF WAFER AFTER KOH ETCH

50 µm in 57 min ~.877 µm/min

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 22

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DIAPHRAGM THICKNESS USING OPTICAL MICROSCOPE

31 µm
500 µm

20% KOH Etch, @ 72 C, 10 Hrs.

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 23

 MEMs – Actuators

SQUARE DIAPHRAGM MOVIE

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 24

 MEMs – Actuators

MEMS THERMAL ACTUATOR AND POSITION SENSOR

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 25

 MEMs – Actuators

THERMAL ACTUATED VERTICAL DISPLACEMENT

Ih e a t ( m A ) V o u t (m V ) Z - d e f le c t io n ( u m ) v e c c o
0 1 1 .8 -4
20 1 1 .3 - 2 .7 5
30 1 0 .6 - 1 .6
40 8 .7 - 0 .6 5
50 6 .2 0 .3 5
60 1 .3 2 .6 5
66 - 1 7 .4 1 7 .5
70 - 2 1 .7 2 2 .2

15

Veeco NT1100 10
y = - 1 .3 4 1 9 x + 7 .0 0 2 8

Increase heater current 2

R = 0 .9 9 1 8

5
Measure z-displacement and Vout
V o u t (m V )
0

-5 0 5 10
-5

-10

-15
Rochester Institute of Technology
Microelectronic Engineering Z - d e fle c tio n (µm )

© October 31, 2016 Dr. Lynn Fuller Page 26

 MEMs – Actuators

VISCOCITY SENSOR JOURNAL PUBLICATION AND PATENT

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 27

 MEMs – Actuators

SELECTED MATERIAL PROPERTIES

Thermal Young’s Thermal Density
Expansion Modulus Conductivity
ppm/°C 1012 dyne/cm2 w/cmK gm/cm3
Silicone Elastomers 275-300
Unfilled Epoxies 100-200 0.015
Filled Epoxies 50-125
Aluminum 20-25 0.68 2.36 2.7
Copper 15-20 1.20 3.98 8.96
Gold 14.2 0.785 3.19 19.3
Silicon (single crystal) 2.4 1.9 1.9 2.33
Poly Silicon 2.4 1.5 1.5 2.33
Inconel 2.4
Nickel-Iron 1.22
Alumina Ceramic 6.3
Borosilicate Glass 5.0
Silicon Dioxide 0.55 0.73 0.014 2.19
Silicon Nitride 0.8 3.85 0.185 3.44
Diamond 1.0 11 20
Air -
Rochester Institute of Technology
- 0.00026
Water - 10 dyne/cm2 = 1 newton/m
Microelectronic Engineering - 2 0.0061
© October 31, 2016 Dr. Lynn Fuller Page 28
 MEMs – Actuators

POLYIMIDE ON HEATER

Movie

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 29

 MEMs – Actuators

A WALKING SILICON MICRO-ROBOT

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 30

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A WALKING SILICON MICRO-ROBOT

http://www.s3.kth.se/mst/staff/thorbjorne.html
Professor Goran Stemme
Kungliga Tekniska Hogskolan
Stockholm, Sweden
Rochester Institute of Technology
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 31

 MEMs – Actuators

A WALKING SILICON MICRO-ROBOT

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 32

 MEMs – Actuators

A WALKING SILICON MICRO-ROBOT

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 33

 MEMs – Actuators

A WALKING SILICON MICRO-ROBOT

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 34

 MEMs – Actuators

A WALKING SILICON MICRO-ROBOT

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 35

 MEMs – Actuators

A WALKING SILICON MICRO-ROBOT

Movie

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 36

 MEMs – Actuators

THERMALLY ACTUATED MICRO MIRROR

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 37

 MEMs – Actuators

CAPACITIVE ELECTROSTATIC FORCE

Energy stored in a parallel plate capacitor W

with area A and space between plates of d
W = 0.5 QV = 0.5 CV2
since Q = CV ++++++++
The energy stored in a capacitor
can be equated to the force times F d
distance between the plates -------
area A
W = Fd or F = W/d C= e oe rA
d
F= eo e r AV2
2d2 e opermitivitty of free space = 8.85e-12 Farads/m
e r = relative permitivitty (for air e r = 1)
Rochester Institute of Technology
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 38

 MEMs – Actuators

ELECTROSTATIC FORCE EXAMPLE

Example: 100 µm by 100 µm parallel plates

space = 1 µm, voltage = 10 V
Find the force of attraction between the two plates
e oe r AV2
F=
2d2

8.85e-(100e-6)(100e-6)(10)2
F=
2(1e-6)2

F = 4.42e-6 newtons

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 39

 MEMs – Actuators

DIGITAL LIGHT PROJECTION SYSTEM

www.TI.com

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 40

 MEMs – Actuators

TI DLP - ELECTROSTATIC MIRRORS

www.TI.com
Torrisonal Mirrors Can Tilt
Along One Axis

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 41

 MEMs – Actuators

ELECTROSTATIC MIRROR

MOEMs - Micro Optical Electro Mechanical Systems

Lucent Technologies–Lambda Router (256 mirror fiber optic multiplexer)

Nested Torrisonal Mirrors Can Tilt Along Three Axis
Rochester Institute of Technology
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 42

 MEMs – Actuators

ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 43

 MEMs – Actuators

ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 44

 MEMs – Actuators

ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR

1. Actuator can generate high

power
2. Maintain a position precisely
3. Move a long distance.

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 45

 MEMs – Actuators

ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 46

 MEMs – Actuators

ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR

Testing
Figure shows test results
for 1Hz actuation, each impact
gives 20 nm displacement
Lifetime looks good. Test
for 1 month, 550 million
collisions, no visible problems
Energy was supplied to
actuator by wireless RF
transmision

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 47

 MEMs – Actuators

ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 48

 MEMs – Actuators

ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR

Conclusion
A New type of actuator is described
Diven by electrostatic force
~15 nm per impact at 100 Volts
Speed of 2.7 um/sec at 200 Hz
Life greater than 550 million impacts

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 49

 MEMs – Actuators

MEMS SWITCH

Signal Line Signal Line

Signal Line Signal Line
Electrostatic actuation (V) pulls
down contactor to make connection
along the signal line.

Rochester Institute of Technology

Microelectronic Engineering V
© October 31, 2016 Dr. Lynn Fuller Page 50
 MEMs – Actuators

SWITCH CALCULATIONS PLUS DIMENSIONS

Each project has 5mm x 5mm layout space

Artur
Nigmatulin
2011

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 51

 MEMs – Actuators

AC MEMS SWITCH

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 52

 MEMs – Actuators

SHUFFLE MOTOR MOVIES

Movie Movie

What actuation mechanism is this?

Rochester Institute of Technology
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 53

 MEMs – Actuators

ELECTROSTATIC COMB DRIVE MICROACTUATORS

Electrostatic movement parallel to wafer surface

Anchor

Anchor Anchor

From Jay Zhao

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 54

 MEMs – Actuators

CALCULATION OF DISPLACEMENT VS VOLTAGE

L
F = er eo t V2 / 2 d

Rochester Institute of Technology

movement
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 55

 MEMs – Actuators

SPRING ELECTROSTATIC DRIVE & CAPACITIVE READ OUT

Anchor

C1 C1

Gnd

C2 C2
Anchors
and Electrical Ground

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 56

 MEMs – Actuators

PICTURES & MOVIES OF ELECTROSTATIC COMB DRIVE

Movies at www.sandia.gov

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 57

 MEMs – Actuators

PICTURES & MOVIES OF ELECTROSTATIC COMB DRIVE

MOVABLE MIRROR

Movies at www.sandia.gov

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 58

 MEMs – Actuators

MAGNETIC TORSIONAL MIRROR

Contact
L
W
Supporting arm Metal contact

Diaphragm
z

Topside Hole
Bcoil

Bm

Figure 2: Cross sectional view labels with

variables.

Figure 1: Top down CAD design of single axis

0   Torsional Mirror
2 R I
2
   LW 
2
Bm
 m m m coil  4  z 2  R   
2 3/2
 
F   N
oz oz

Rochester Institute of Technology

Microelectronic Engineering
Paper by Eric Harvey
© October 31, 2016 Dr. Lynn Fuller Page 59
 MEMs – Actuators

MAGNETIC FIELD

i B
F

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 60

 MEMs – Actuators

DARTMOUTH COLLEGE MICROROBOTS

This SEM image shows the untethered scratch drive actuator

(A) used for propulsion, and the cantilevered steering arm (B)
which can be lowered to provide a turning pivot. The wavey
lines the robot sits on are the insulated interdigitated electrode
array which transmits power and control signals to the robot.

http://engineering.dartmouth.edu/microeng/robot05.html
Rochester Institute of Technology
Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 61

 MEMs – Actuators

REFERENCES
1. “Microsensors,” Muller, Howe, Senturia, Smith and White, IEEE
Press, NY, NY 1991.
2. “Sensor Technology and Devices,” Ristic, L.J., Artech House,
London, 1994.
3. IEEE Journal of Microelectromechanical Systems
4. “Electrostatic Impact-Drive Microactuator”, M.Mita, et.el.,
University of Tokyo, IEEE, 2001
5. “A walking Silicon Micro-Robot”, Thorbjorn Ebefors, et.el.,
Department of signals, sensors and Systems, Royal Institute of
technology, Stockholm, Sweden, 10th Int. conference on solid-
State Sensors and Actuators, Sendai Japan, June 7-10, 1999.
6. MEMs Wing Technology for a battery-Powered Ornithopter, T.
Nick Pornsin-sirirak, Caltech Micromachining Laboratory,
Pasadena, CA, 91125, IEEE, 2000.

Rochester Institute of Technology

Microelectronic Engineering

© October 31, 2016 Dr. Lynn Fuller Page 62