MiCS 6814 Datasheet
MiCS 6814 Datasheet
MiCS 6814 Datasheet
Features 1.00
1.00 H2S Methane
Methane
Rs/R0
Rs/R0
100.00
NO2
10.00
• Hydrogen H2 1 – 1000ppm
• Ammonia NH3 1 – 500ppm 0.01
0.01 0.1 1 10 100
• Methane CH4 >1000ppm Concentration [ppm]
1.0
Propane
Rs/R0
Hydrogen
info.em@sgxsensortech.com Ammonia
0.0
1 10 100 1000 10000 100000
SGX Sensortech, Courtils 1 Concentration [ppm]
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Page 1 of 5
MiCS-6814
Data Sheet 1143 rev 7
Performance OX sensor
Characteristic
Symbol Typ Min Max Unit
OX sensor
Sensing resistance in air (see note 1) R0 - 0.8 20 k
Typical NO2 detection range FS 0.05 10 ppm
Sensitivity factor (see note 3) SR - 2 - -
Characteristic
Symbol Typ Min Max Unit
OX sensor
Sensing resistance in air (see note 1) R0 - 10 1500 k
Typical NH3 detection range FS 1 300 ppm
Sensitivity factor (see note 4) SR - 1.5 15 -
Notes:
1. Sensing resistance in air R0 is measured under controlled ambient conditions, i.e. synthetic air at 23
±5°C and 50 ± 10% RH for RED sensor and synthetic air at 23 ±5°C and ≤ 5% RH for OX sensor.
Sampling test.
2. Sensitivity factor is defined as Rs in air divided by Rs at 60 ppm CO. Test conditions are 23 ± 5°C and
50 ± 10% RH. Indicative values only. Sampling test.
3. Sensitivity factor is defined as Rs at 0.25 ppm NO2, divided by Rs in air. Test conditions are 23 ± 5°C
and ≤ 5% RH . Indicative values only. Sampling test.
4. Sensitivity factor is defined as Rs in air divided by Rs at 1 ppm of NH3. Test conditions are 23 ± 5°C
and 50 ± 10% RH. Indicative values only. Sampling test.
Page 2 of 5
MiCS-6814
Data Sheet 1143 rev 7
Parameter
Symbol Typ Min Max Unit
RED sensor/OX sensor/NH3 sensor
Heating power PH 76/43/66 71/30/60 81/50/73 mW
Heating voltage VH 2.4/1.7/2.2 - - V
Heating current IH 32/26/30 - - mA
Heating resistance
RH 74/66/72 66/59/64 82/73/80
at nominal power
Page 3 of 5
MiCS-6814
Data Sheet 1143 rev 7
Pin Connection
A Rs2
B Rh1 RED, Rs1 RED
C Rh1 NH3
OperatingDconditions
Rs1 NH 3
E Rh2 NH3
F Rs2 NH3
G Rh2 RED
H Rs2 RED
K Rh2 OX
MiCS-6814 configuration (bottom view)
Sensor configuration
The silicon gas sensor structure consists of an accurately micro machined diaphragm with an
embedded heating resistor and the sensing layer on top.
The MiCS-6814 includes three sensor chips with independent heaters and sensitive layers. One sensor
chip detects oxidising gases (OX) , the other sensor detects reducing gases (RED) and the other
detects NH3. The internal connections are shown above.
Page 4 of 5
MiCS-6814
Data Sheet 1143 rev 7
Packaging
Power circuit
The sensors are packaged in a tape and reel for
expedition.
The two resistors (82 ohm for RED and 51+82
ohm sensors
The are necessary
for OX) are placed in ato
carrier
obtaintype. The
the right
dimensions ofon
temperatures thethe
cavity
twoare 5.5 x 7.5 xheaters
independent 2.55 mm
(the tolerance is +/- 0.2 mm).
while using a 5V power supply.
The outside dimension of the reel is either 178
+- mm (for a maximum of 700 sensors ) or 330
+ 0.25 / -4 mm (for a maximum of 2000
sensors).
IMPORTANT PRECAUTIONS:
Read the following instructions carefully before using the MiCS-6814 described here to avoid erroneous
readings and to prevent the device from permanent damage.
•The sensor must be reflow soldered in a neutral atmosphere, without soldering flux vapours.
•The sensor must not be exposed to high concentrations of organic solvents, silicone vapours or cigarette-
smoke in order to avoid poisoning the sensitive layer.
•Heater voltage above the specified maximum rating will destroy the sensor due to overheating.
•This sensor is to be placed in a filtered package that protects it against water and dust projections.
•SGX sensortech strongly recommends using ESD protection equipment to handle the sensor.
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Whilst SGX sensortech has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences
of any use thereof and also reserves the right to change the specification of goods without notice. SGX sensortech accepts no liability beyond the set
out in its standard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance
with information contained herein.
Page 5 of 5