BF254 BF255
BF254 BF255
BF254 BF255
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 20 V
Collector-base voltage VCES 30
Emitter-base voltage VEBO 5
Collector current 7c 30 mA
Total power dissipation, TA s 45 'C PM 250 mW
Junction temperature Ti 150 'C
Storage temperature range r«o -65, .. + 150
Thermal Resistance
Junction - ambient 5420 K/W
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice infomation famished by N; Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Downloaded from: http://www.datasheetcatalog.com/
BF254
BF255
Electrical Characteristics
at TA = 25 'C, unless otherwise specified.
Parameter Symbol Values Unit
mln. typ. max.
DC Characteristics
_
DC current gain Are
/c = 1 mA, VCE - 10 V
BF254 65 — 220
BF255 35 - 130
Base-emitter voltage VBE — 0.68 — V
AC Characteristics
Transition frequency ft MHz
/c . 1 mA, VCE « 10 V, /= 100 MHz
BF254 - 260 -
BF255 220
Collector-base capacitance Cob — 0.6 — PF
VCB - 10 V, VBE = 0 V,/= 1 MHz
Collector-emitter capacitance Co — 0.6 —
Vets = 10 V, VBE = 0 V,/= 1 MHz
Noise figure F dB
/c = 1 mA, Vce = 10 V
/=1 MHz,£.= 1.5mSi> - 1.2 -
/=100MHz,s.= 10mSi> 3.8
www.DatasheetCatalog.com