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    Shenzhen JTD Electronics Co.,Ltd: TO-92 Plastic-Encapsulate Transistors 13001S8D

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    Aero Ranjith
    This document provides specifications for a TO-92 plastic-encapsulated NPN transistor. It lists the transistor's limiting values such as maximum voltages and currents. It also provides its electrical characteristics including breakdown voltages, cutoff currents, gain, and switching times. The transistor is suitable for power switching applications and operates within the listed value ranges for parameters like collector current, power dissipation, and junction temperature.

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    Shenzhen JTD Electronics Co.,Ltd: TO-92 Plastic-Encapsulate Transistors 13001S8D

    Uploaded by

    Aero Ranjith
    33 views1 page
    This document provides specifications for a TO-92 plastic-encapsulated NPN transistor. It lists the transistor's limiting values such as maximum voltages and currents. It also provides its electrical characteristics including breakdown voltages, cutoff currents, gain, and switching times. The transistor is suitable for power switching applications and operates within the listed value ranges for parameters like collector current, power dissipation, and junction temperature.

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    Transistor

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    13001S8D

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    This document provides specifications for a TO-92 plastic-encapsulated NPN transistor. It lists the transistor's limiting values such as maximum voltages and currents. It also provides its electrical characteristics including breakdown voltages, cutoff currents, gain, and switching times. The transistor is suitable for power switching applications and operates within the listed value ranges for parameters like collector current, power dissipation, and junction temperature.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    33 views1 page

    Shenzhen JTD Electronics Co.,Ltd: TO-92 Plastic-Encapsulate Transistors 13001S8D

    Uploaded by

    Aero Ranjith
    This document provides specifications for a TO-92 plastic-encapsulated NPN transistor. It lists the transistor's limiting values such as maximum voltages and currents. It also provides its electrical characteristics including breakdown voltages, cutoff currents, gain, and switching times. The transistor is suitable for power switching applications and operates within the listed value ranges for parameters like collector current, power dissipation, and junction temperature.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    SHENZHEN JTD ELECTRONICS CO.

    ,LTD
    TO-92 Plastic-Encapsulate Transistors

    13001S8D TRANSISTOR(NPN)
    FEATURES

    Power switching applications


    TO-92

    LIMMITING VALUES(Tj=25℃ Unless Otherwise Stated) 1. EMITTER


    Parameter Symbol Value Unit
    2. COLLECTOR
    Collector-Base Voltage VCBO 600 V
    Collector-Emitter Voltage VCEO 400 V 3. BASE
    Emitter-Base Voltage VEBO 7 V
    Collector Current Ic 0.5 A
    Total Power Dissipattion Pc 0.65 W
    Storage Temperature Tstg -65~150 ℃
    Junction Temperature Tj 150 ℃

    ELECTRICAL CHARACTERISTICS （Tj=25℃ Unless Otherwise Stated）


    Parameter Symbol Test conditions Min Max Unit
    Collector-Base Breakdown Voltage BVCBO Ic=0.5mA,Ie=0 600 V
    Collector-Emitter Breakdown Voltage BVCEO Ic=10mA,Ib=0 400 V
    Emitter-Base Breakdown Voltage BVEBO Ie=1mA,Ic=0 7 V
    Collector-Base Cutoff Current ICBO Vcb=600V,Ie=0 100 μA
    Collector- Emitter Cutoff Current ICEO Vce=400V,Ib=0 20 μA
    Emitter-Base Cutoff Current IEBO Veb=7V,Ic=0 100 μA
    DC Current Gain hFE Vce=20V,Ic=20mA 10 40
    Collector- Emitter Saturation Voltage VCE(sat) Ic=200mA,Ib=100mA 0.6 V
    Base- Emitter Saturation Voltage VBE(sat) Ic=200mA,Ib=100mA 1.2 V
    Storage Time Ts Ic=0.1mA, (UI9600) 2 μS
    VCE =20V,Ic=20mA
    Falling Time fT 0.8 μS
    f=1MHZ
    CLASSIFICATION OF Hfe(1)
    Range 10-15 15-20 20-25 30-35

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