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    TPT5609 (1)

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    arad electronic
    tpt

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    TPT5609 (1)

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    tpt

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    tpt

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    2 views1 page

    TPT5609 (1)

    Uploaded by

    arad electronic
    tpt

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    TPT5609

    TO-92L
    TPT5609 TRANSISTOR (NPN)

    1. EMITTER
    FEATURES
    Power dissipation 2. COLLECTOR

    PCM: 1 W (Tamb=25℃) 3. BASE

    Collector current
    ICM: 1 A
    Collector-base voltage
    V(BR)CBO: 25 V 123
    Operating and storage junction temperature range

    TJ, Tstg: -55℃ to +150℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO Ic=10µA, IE=0 25 V

    Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 20 V

    Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V

    Collector cut-off current ICBO VCB=20V, IE=0 1 µA

    Emitter cut-off current IEBO VEB=5V, IC=0 1 µA

    DC current gain hFE VCE=2V, IC=500mA 60 240

    Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V

    Base-emitter voltage VBE VCE=2V, IC=500mA 1 V

    Transition frequency fT VCE=2V, IC=500mA 190 MHz

    Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 22 pF

    CLASSIFICATION OF hFE
    Rank A B C
    Range 60-120 85-170 120-240

    WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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