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    Utc m28s Datasheet

    Uploaded by

    Sue Ridgepipe
    This document provides specifications for a UTC M28S NPN epitaxial silicon transistor intended for use as an audio output driver or general purpose switch. It lists maximum ratings, electrical characteristics, and classifications for DC current gain.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Utc m28s Datasheet

    Uploaded by

    Sue Ridgepipe
    55 views2 pages
    This document provides specifications for a UTC M28S NPN epitaxial silicon transistor intended for use as an audio output driver or general purpose switch. It lists maximum ratings, electrical characteristics, and classifications for DC current gain.

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    utc_m28s_datasheet

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    utc_m28s_datasheet

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    This document provides specifications for a UTC M28S NPN epitaxial silicon transistor intended for use as an audio output driver or general purpose switch. It lists maximum ratings, electrical characteristics, and classifications for DC current gain.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    55 views2 pages

    Utc m28s Datasheet

    Uploaded by

    Sue Ridgepipe
    This document provides specifications for a UTC M28S NPN epitaxial silicon transistor intended for use as an audio output driver or general purpose switch. It lists maximum ratings, electrical characteristics, and classifications for DC current gain.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    UTC M28S NPN EPITAXIAL SILICON TRANSISTOR

    AUDIO OUTPUT DRIVER


    AMPLIFIER

    FEATURES
    *Excellent HFE linearity
    *High DC Current Gain
    *High Power Dissipation
    1
    APPLICATION
    *Audio output driver amplifier
    *General purpose switch

    TO-92

    1:EMITTER 2:COLLECTOR 3:BASE

    ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    PARAMETERS SYMBOL RATING UNITS
    Collector-base voltage VCBO 40 V
    Collector-emitter voltage VCEO 20 V
    Emitter-base voltage VEBO 6 V
    Collector dissipation(Ta=25°C) Pc 850 mW
    Collector current Ic 1.25 A
    Base current IB 0.4 A
    Junction Temperature Tj 150 °C
    Storage Temperature TSTG -55 ~ +150 °C

    ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    Collector-base voltage VCBO Ic=0.1mA 40 V
    Collector-emitter voltage VCEO Ic=1mA 20 V
    Emitter-base voltage VEBO IE=0.1mA 6 V
    Collector cut-off current ICBO VCB=35V,IE=0 100 nA
    Emitter cut-off current IEBO VEB=5V,Ic=0 100 nA
    DC current gain(note) hFE1 VCE=1V,Ic=1mA 290
    hFE2 VCE=1V,Ic=0.1A 300 1000
    hFE3 VCE1=1V,Ic=0.3A 300
    hFE4 VCE=1V,Ic=0.5A 300
    Collector-emitter saturation voltage VCE(sat) Ic=600mA,IB=20mA 0.55 V
    Current gain bandwidth product fT VCE=10V,Ic=50mA,f=1MHz 100 MHz
    Output capacitance Cob VCB=10V,IE=0,f=1MHz 9 pF

    UTC UNISONIC TECHNOLOGIES CO. LTD 1


    QW-R201-015,A
    UTC M28S NPN EPITAXIAL SILICON TRANSISTOR

    CLASSIFICATION OF hFE2
    RANK B C D
    RANGE 300-550 500-700 650-1000

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UTC UNISONIC TECHNOLOGIES CO. LTD 2


    QW-R201-015,A

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