FDC642P Single P-Channel 2.

5V Specified PowerTrench® MOSFET

January 2010

FDC642P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
-20 V, -4.0 A, 65 mΩ
Features General Description
„ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A This P-Channel 2.5V specified MOSFET is produced using
„ Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fairchild’s advanced PowerTrench® process that has been
especially tailored to minimize on-state resistance and yet
„ Fast switching speed maintain low gate charge for superior switching performance.
„ Low gate charge (11nC typical) These devices have been designed to offer exceptional power
„ High performance trench technology for extremely low rDS(on) dissipation in a very small footprint for applications where the
larger packages are impractical.
„ SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1 mm thick) Applications
„ Termination is Lead-free and RoHS Compliant
„ Load switch
„ Battery protection
„ Power management

D D

D D

G S

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage -20 V
VGS Gate to Source Voltage ±8 V
-Continuous TA = 25°C (Note 1a) -4.0
ID A
-Pulsed -20
Power Dissipation ( Note 1a) 1.6
PD W
Power Dissipation (Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range -55 to + 150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
.642 FDC642P SSOT-6TM 7 ’’ 8 mm 3000 units

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDC642P Rev.C2
 FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V
∆BVDSS Breakdown Voltage Temperature
ID = -250 µA, referenced to 25°C -13 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA
IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 µA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA -0.4 -0.6 -1.5 V
∆VGS(th) Gate to Source Threshold Voltage
ID = -250 µA, referenced to 25°C 2.5 mV/°C
∆TJ Temperature Coefficient
VGS = -4.5 V, ID = -4.0 A 45 65
VGS = -2.5 V, ID = -3.2 A 55 100
rDS(on) Static Drain to Source On Resistance mΩ
VGS = -4.5 V, ID = -4.0 A,
62 90
TJ = 125°C
gFS Forward Transconductance VDS = -5 V, ID = -4.0 A 15 S

Dynamic Characteristics
Ciss Input Capacitance 700 925 pF
VDS = -10 V, VGS = 0 V,
Coss Output Capacitance 110 150 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 95 145 pF

Switching Characteristics
td(on) Turn-On Delay Time 6 12 ns
tr Rise Time VDD = -10 V, ID = -1 A, 7 14 ns
td(off) Turn-Off Delay Time VGS = -4.5 V, RGEN = 6 Ω 120 190 ns
tf Fall Time 52 83 ns
Qg Total Gate Charge 11 16 nC
VDD = -10 V, ID = -4 A
Qgs Gate to Source Charge 1.1 nC
VGS = --4.5 V
Qgd Gate to Drain “Miller” Charge 3.0 nC

Drain-Source Diode Characteristics

IS Maximum Continuous Drain-Source Diode Forward Current -1.3 A
VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.7 -1.2 V

Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user’s board design.

a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper.

b. 156°C/W when mounted on a minimum pad of 2 oz copper.

2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%.

©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDC642P Rev.C2
 FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

20 5

DRAIN TO SOURCE ON-RESISTANCE

VGS = -4.5 V PULSE DURATION = 80 µs
VGS = -3.5 V DUTY CYCLE = 0.5% MAX
16 4
-ID, DRAIN CURRENT (A)

VGS = -2.0 V VGS = -1.5 V

VGS = -3.0 V

NORMALIZED
12 VGS = -2.5 V 3
VGS = -2.0 V

8 2 VGS = -2.5 V
VGS = -1.5 V
4 1
PULSE DURATION = 80 µs VGS = -3.0 V VGS = -3.5 V VGS = -4.5 V
DUTY CYCLE = 0.5% MAX
0 0
0 1 2 3 4 5 0 4 8 12 16 20
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 180
ID = -4.0 A PULSE DURATION = 80 µs
DRAIN TO SOURCE ON-RESISTANCE

VGS = -4.5 V SOURCE ON-RESISTANCE (mΩ) DUTY CYCLE = 0.5% MAX

1.4 150
ID = -4.0 A
rDS(on), DRAIN TO
NORMALIZED

1.2 120

1.0 90 TJ = 125 oC

0.8 60

TJ = 25 oC
0.6 30
-75 -50 -25 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

20 10
-IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80 µs VGS = 0 V

DUTY CYCLE = 0.5% MAX
16
-ID, DRAIN CURRENT (A)

VDS = -5 V
1 TJ = 150 oC
12

8 TJ = 25 oC
0.1
TJ = 150 oC TJ = 25 oC
4
TJ = -55 oC
TJ = -55 oC
0 0.01
0.5 1.0 1.5 2.0 2.5 3.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDC642P Rev.C2
 FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

4.5 2000
-VGS, GATE TO SOURCE VOLTAGE (V)

ID = -4.0 A
4.0 Ciss
1000
3.5

CAPACITANCE (pF)
3.0
VDD = -5 V
2.5 Coss
VDD = -10 V
2.0 100
VDD = -15 V
1.5
Crss
1.0
f = 1 MHz
0.5 VGS = 0 V
0.0 10
0 3 6 9 12 0.1 1 10 20
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

50 1000

P(PK), PEAK TRANSIENT POWER (W)

VGS = -4.5 V

10 100 µs
-ID, DRAIN CURRENT (A)

100
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on) 100 ms
10
SINGLE PULSE 1s
0.1
TJ = MAX RATED SINGLE PULSE
10 s
RθJA = 156 oC/W DC RθJA = 156 oC/W
TA = 25 oC 1 TA = 25 oC
0.01 0.5
0.1 1 10 60 10
-4
10
-3
10
-2
10
-1
1 10 100 1000
-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 9. Forward Bias Safe Figure 10. Single Pulse Maximum

Operating Area Power Dissipation

2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
NORMALIZED THERMAL

0.1
IMPEDANCE, ZθJA

0.05
0.1
0.02
PDM
0.01

t1
0.01 t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
o PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 156 C/W
0.001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 11. Junction-to-Ambient Transient Thermal Response Curve

©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDC642P Rev.C2
 FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
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AccuPower™ FlashWriter® * PDP SPM™ ®*
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CorePLUS™ FRFET® PowerXS™ ®

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Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I46
©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FDC642P Rev. C2