Scribd Logo
Upload

Welcome to Scribd!

  • 29 views

    BRAC University: ECE230 & EEE209 (Semiconductor Materials and Devices) Summer 2020

    Uploaded by

    REDWAN AHMED MIAZEE
    This document contains an assignment on semiconductor materials and devices with 6 questions: 1. Calculate the conductivity and drift current density for silicon doped with Nd=1015 cm-3. 2. Calculate the conductivity and drift current density for compensated GaAs with Nd=5×1015 cm-3 and Na=2×1016 cm-3. 3. Find the doping density needed for an n-type semiconductor to achieve a resistivity of 0.1 ohm-cm. Then calculate the resistance of a material with dimensions of 1μm × 2μm × 10μm. 4. Calculate the diffusion current density for a silicon bar with varying electron concentration

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    BRAC University: ECE230 & EEE209 (Semiconductor Materials and Devices) Summer 2020

    Uploaded by

    REDWAN AHMED MIAZEE
    29 views2 pages
    This document contains an assignment on semiconductor materials and devices with 6 questions: 1. Calculate the conductivity and drift current density for silicon doped with Nd=1015 cm-3. 2. Calculate the conductivity and drift current density for compensated GaAs with Nd=5×1015 cm-3 and Na=2×1016 cm-3. 3. Find the doping density needed for an n-type semiconductor to achieve a resistivity of 0.1 ohm-cm. Then calculate the resistance of a material with dimensions of 1μm × 2μm × 10μm. 4. Calculate the diffusion current density for a silicon bar with varying electron concentration

    Original Title

    Assignment_2_sum20

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document contains an assignment on semiconductor materials and devices with 6 questions: 1. Calculate the conductivity and drift current density for silicon doped with Nd=1015 cm-3. 2. Calculate the conductivity and drift current density for compensated GaAs with Nd=5×1015 cm-3 and Na=2×1016 cm-3. 3. Find the doping density needed for an n-type semiconductor to achieve a resistivity of 0.1 ohm-cm. Then calculate the resistance of a material with dimensions of 1μm × 2μm × 10μm. 4. Calculate the diffusion current density for a silicon bar with varying electron concentration

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    29 views2 pages

    BRAC University: ECE230 & EEE209 (Semiconductor Materials and Devices) Summer 2020

    Uploaded by

    REDWAN AHMED MIAZEE
    This document contains an assignment on semiconductor materials and devices with 6 questions: 1. Calculate the conductivity and drift current density for silicon doped with Nd=1015 cm-3. 2. Calculate the conductivity and drift current density for compensated GaAs with Nd=5×1015 cm-3 and Na=2×1016 cm-3. 3. Find the doping density needed for an n-type semiconductor to achieve a resistivity of 0.1 ohm-cm. Then calculate the resistance of a material with dimensions of 1μm × 2μm × 10μm. 4. Calculate the diffusion current density for a silicon bar with varying electron concentration

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    BRAC University

    ECE230 & EEE209 (Semiconductor Materials and Devices)


    Summer 2020
    Assignment 2
    1. Consider a sample of silicon at T = 300 K doped at an impurity
    concentration of: Nd= 1015 cm-3. Assume electron and hole mobilities are
    1350 and 480 cm2/V.s, respectively. Calculate the conductivity of the
    silicon. If an electric field is E = 35 V/cm is applied, calculate the drift
    current density.
    2. Consider a compensated GaAs semiconductor at T = 300 K. Nd= 5×1015
    cm-3 and Na = 2×1016 cm-3. Calculate the conductivity of the
    semiconductor. If an electric field is E = 100 V/cm is applied, calculate
    the drift current density. Assume electron and hole mobilities are 1350
    and 480 cm2/V.s, respectively.
    3. It is required to have an n-type semiconductor with resistivity 0.1 ohm-
    cm. Find the doping density needed to achieve this resistivity. If the
    semiconductor has a dimension of 1μm × 2μm × 10μm, calculate the
    resistance of the material.
    4. A 0.1 cm long bar of Silicon has electron concentration of 1016 cm-3 at one
    end and 8×1015 cm-3 at the other end. Calculate the diffusion current
    density if the electron density varies linearly through the bar. Assume
    electron mobility 1350 cm2/V.s and T = 300 K.
    5. Consider a semiconductor that is non-uniformly doped with acceptor
    impurity atoms as shown in the figure below. If the semiconductor is in
    thermal equilibrium, draw the energy band diagram showing the
    intrinsic and the Fermi energy levels through the crystal. Derive an
    expression for the induced electric field and show its direction in the
    diagram.
    6. An intrinsic Si sample is doped with donors from one side such that Nd =
    N0 exp(-ax). (i) Find an expression for E(x) at equilibrium over the range
    for which Nd >> ni. (ii) Evaluate E when a = 1 (μm)-1. (iii) Sketch a band
    diagram showing the intrinsic and the Fermi energy levels through the
    crystal and indicate the direction of E.

    You might also like