Chapter 5 Solutions

Prob. 5.1
Find the time that it takes to grow the first 200nm, the next 300nm, and the final 400nm.
Draw and calculate step heights after reoxidation.
Time for first 200nm = 0.13 hours from Appendix VI at 1000°C

Time for next 300nm = 0.6 hours for 500nm – 0.13 hours for 200nm = 0.47 hours

Time for final 400nm = 1.8 hours for 900nm – 0.6 hours for 500 nm = 1.2 hours

Oxidation Time After Etch = 6.0 hours for 2000nm – 1.4 hours for 900nm at 1100°C
= 4.6 hours

Oxide Growth Inside Window = 1700nm

Step in oxide = 564 nm

. We or
m W ina g

b)
ed e n
Step in Si = 264 nm

in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

564nm
of rk ( stu e o tat
ity o g us d S
te is ss th ite

1120nm
in f th se for Un
gr w in e
th t o a ly by
y ar d le d

556nm 952nm
ro p an o te
st ny s d s ec

504nm
de f a rse de ot

Original
ill o u vi pr
w le co ro is

Si surface
sa eir is p rk

0.44 · 900=396nm
th d wo

880nm
an his

e
T

1144nm 748nm
264nm Si
Prob. 5.2
Plot the distributions for B diffused into Si (Nd= 5 ⋅1016 1
cm3
) at 1000°C for 30min (D=
3 ⋅10-14 cms ) with (a) constant source No= 5 ⋅1020
2
1
cm3
and (b) limited source
No= 5 ⋅1013 1
cm3
on the surface prior to diffusion.

The Gaussian distribution differs from Equation 4-44 because all atoms are assumed to
diffuse into the sample (i.e. there is no diffusion in the –x direction).

D ⋅ t = 3 ⋅10-14 cms ⋅ 30min ⋅ 60 min = 5.4 ⋅10-10cm2 = 0.0735µm

2
s

⎛ x ⎞ ⎛ x ⎞
(a) N = No ⋅ erfc ⎜ ⎟ = No ⋅ erfc ⎜ 0.147µm ⎟
⎝ 2 D ⋅ t ⎠ ⎝ ⎠

. We or
m W ina g

b)
ed e n
in
no W iss ea s
xj=0.4μm

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

2 2
x ⎞ ⎛ x ⎞
- ⎛⎜
of rk ( stu e o tat

Ns ⎟ Ns - ⎜ ⎟
ity o g us d S

(b) N = ⋅e ⎝ 2 D⋅t ⎠
= ⋅ e ⎝ 0.147µm ⎠
te is ss th ite

π ⋅ D⋅t 0.1302µm
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk

xj=0.3μm
th d wo
an his

e
T

Prob. 5.3
For the unlimited source in Problem 5.2, calculate the time to achieve a junction depth
of 1 micron.
Use N o from Appendix VII and D from Appendix VIII.

⎛ x ⎞ ⎛ 1µm ⎞
21 1
N = N o ⋅ erfc ⎜ ⎟ = 10 ⋅ erfc ⎜ ⎟ = 2 ⋅1016 1
cm3 cm3
⎝ 2 D ⋅ t ⎠ ⎜ 2 3 ⋅10-14 cm2 ⋅ t ⎟
⎝ s ⎠
⎛ 1µm ⎞ 2 ⋅1016 1 3
erfc ⎜ ⎟ = cm
= 2 ⋅10-5
⎜ 2 3 ⋅10-14 cm2 ⋅ t ⎟ 1021 cm1 3
⎝ s ⎠
1µm 10-4 cm
= = 3.0
2 3 ⋅10-14 cms ⋅ t 2 3 ⋅10-14 cms ⋅ t
2 2

t = 9260s = 2 hrs 34 minutes 20 seconds

Prob. 5.4
Find the implant parameters for an As implant into Si with the peak at the interface.
R p = 0.1µm → Energy = 180keV from Appendix IX
Straggle = ΔR p = 0.035µm
2
1 ⎛ x - R p ⎞
- ⋅⎜ ⎟
φ 2 ⎜⎝ ΔR p ⎟
Ion Distribution from Equation 5-1a = N(x) = ⋅e ⎠

2π ⋅ ΔR p
φ φ φ
N peak = 5 ⋅1019 1
= = =
cm3
2π ⋅ ΔR p -6
2π ⋅ 3.5 ⋅10 cm 8.77 ⋅10-6 cm
φ = 5 ⋅1019 1
cm3
⋅ 8.77 ⋅10-6cm = 4.39 ⋅1014 1
cm 2

I⋅t I ⋅ 20s
φ= = -19 = 4.39 ⋅1014 1
cm 2
q ⋅ A 1.6 ⋅10 C ⋅ 200cm 2

. We or
m W ina g
Beam Current = I = 0.7 mA

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 5.5
Calculate and plot the P distribution.
Energy = 200keV → R p = 0.255µm, ΔR p = 0.0837µm from Appendix IX
Dose = φ = 2.1 ⋅1014 1
cm 2
2
1 ⎛ x - R p ⎞ 1 ⎛ x - 0.255µm ⎞
2

φ - ⋅⎜
2 ⎜⎝ ΔR p
⎟
⎟ 2.1⋅1014 1
cm 2
- ⋅⎜
2 ⎝ 0.1µm ⎠
⎟
From Equation 5-1a, N(x) = ⋅e ⎠
= -6
⋅e
2π ⋅ ΔR p 2π ⋅ 8.37 ⋅10 cm
2.1⋅1014 1
cm 2
Peak N = -6
= 1019 1
cm3
2π ⋅ 8.37 ⋅10 cm
Let y be the distance (µm) on either side of R p .
⋅ e-71.37⋅y
2
N(R p ± y) = 1019 1
cm3

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 5.6
In patterning the structure shown in the question, design the mask aligner optics in terms
of numerical aperture of the lens and the wavelength of the source.
0.8 ⋅ λ λ
lmin = = 1µm DOF = 2
= 2µm
NA 2 ⋅ ( NA )

⎛ 1µm ⋅ NA ⎞ ⎛ 1 ⎞
⎜ ⎟ ⋅ ⎜⎜ 2
⎟ = 2µm → NA = 0.3125 λ = 0.39µm
⎝ 0.8 ⎠ ⎝ 2 ⋅ ( NA ) ⎟⎠

Prob. 5.7
In a p+-n Si junction, the n-side has a donor concentration of 1016 cm-3. If ni=1010 cm-3,
relative dielectric constant εr= 12, calculate the depletion width at a reverse bias of
100V? What is the electric field at the mid-point of the depletion region on the n side?

. We or
m W ina g

b)
ed e n
(Hint: Remember that P+ means very heavily doped!)

in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y

W : xn
w d le tr p

er ld
e lu nt ns co
th inc de f i es

1
of rk ( stu e o tat

⎡ 2ε ( V0 -V ) ⎛ N a +N d ⎞ ⎤ 2
ity o g us d S

W = ⎢
te is ss th ite

⎜ ⎟ ⎥
q ⎝ N a N d ⎠ ⎥⎦
in f th se for Un

⎣⎢
gr w in e
th t o a ly by
y ar d le d

V = -VR VR = 100 V; V0 = VR ⇒ VR + V0 : VR
ro p an o te
st ny s d s ec
de f a rse de ot

ε 0 = 8.85 ×10−14 F/cm

ill o u vi pr

ε = εrε0 ; ε r = 12
w le co ro is
sa eir is p rk
th d wo

1
⎡ 2 ×12 × 8.85 ×10−14 F/cm × (100 V ) ⎛ 1 ⎞ ⎤
2
an his

∴ x n = ⎢
T

−19 ⎜ 16 -3 ⎟ ⎥
⎣ 1.6 ×10 C ⎝ 10 cm ⎠ ⎦
1
= (1.33 ×10−7 ) 2
cm = 3.64 ×10 −4 cm = 3.64 µm
 q
ε= N a ( x-x n )
ε
ε0 = - q Nd x n
ε
∴ Electric field at the middle of depletion region on n-side is
q x 1.6 ×10−19 C 16 -3 3.64 ×10−4 cm
= - Nd n = - × 10 cm ×
ε 2 12 × 8.85 ×10−14 F/cm 2
5
= -2.74 ×10 V/cm

Prob. 5.8
A semiconductor with a bandgap of 0.8 eV and an intrinsic carrier concentration of 1012
cm-3, is doped with 1018 cm-3 donors on the left half, and 1017 cm-3 acceptors on the right

. We or
half. Draw the equilibrium band diagram, Calculate the junction potential and the

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
position of the Fermi level, and indicate them on the band diagram. Suppose an electron
d th g. in t la
an on in rs h
k g rn to rig

at the conduction band edge on the p-side goes over the n-side without scattering.
or in a uc y
w d le tr p

er ld
e lu nt ns co

Assuming parabolic bandstructure, calculate its wavevector there. The effective mass of
th inc de f i es

the carriers is 0.2mo.

of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
 E F -Ein Eip -E F

n = nie kT
p = nie kT

E F -Ein Eip -E F

(
1018cm -3 = 1012cm -3 e ) kT
(
1017 cm -3 = 1012cm -3 e ) kT

E F -E in = ( 0.026 eV ) ln 106 ( ) E ip -E F = ( 0.026 eV ) ln 105 ( )

E F -E in = 0.36 eV E ip -E F = 0.3 eV
⇒ V0 = 0.36 eV + 0.3 eV = 0.66 eV
An electron going over to the n-side from the p-side without scattering has
ћ 2k 2
K.E. = 0.66 eV =
2m*

⇒ k=
( 0.66 ×1.6 ×10 J ) × 2 × (0.2 × 9.11×10
−19 −31
kg )
2
(1.054 ×10 J ⋅ s ) −34

⇒ k = 1.86 ×109 m -1

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un

Prob. 5.9
gr w in e
th t o a ly by

An abrupt Si junction (area=0.0001 cm2) has the following parameters.

y ar d le d
ro p an o te
st ny s d s ec

n-side p-side
de f a rse de ot

s
ill o u vi pr

Nd = 5X 1017cm-3 Na = 1017cm-3
w le co ro is
sa eir is p rk

Draw and label the band diagram, and calculate the difference between the Fermi level
th d wo
an his

and the intrinsic Fermi level on both sides. Calculate the built-in potential at the junction
T

in equilibrium and the depletion width. What is the total number of exposed acceptors in
the depletion region?
For n-Si: N d = 5 ×1017 cm -3
E F -E i ⎛ N ⎞ ⎛ 5 × 1017 cm-3 ⎞
∴ = ln ⎜ d ⎟ ⇒ E F -E i = ( 0.026 eV ) × ln ⎜ 10 -3 ⎟
= 0.45 eV
kT ⎝ n i ⎠ ⎝ 1.5 × 10 cm ⎠
For p-Si: N a = 1×1017 cm -3
E F -E i ⎛ N a ⎞ ⎛ 1×1017 cm -3 ⎞
∴ = ln ⎜ ⎟ ⇒ E F -E i = ( 0.026 eV ) × ln ⎜ 10 -3 ⎟
= 0.41 eV
kT ⎝ n i ⎠ ⎝ 1.5 ×10 cm ⎠
⇒ Vbi = 0.45 eV + 0.41 eV = 0.86 eV
2εSi Vbi ⎛ 1 1 ⎞
The depletion width, W = ⎜ + ⎟
e ⎝ N a N d ⎠

⇒W=
( )
2 × 13 × 8.86 ×10−14 F/cm × ( 0.86 V ) ⎛ 1
+
1 ⎞
−19 ⎜ 17 -3 17 -3 ⎟
1.6 ×10 C ⎝ 1×10 cm 5 ×10 cm ⎠
= 1.16 ×10−5 cm

. We or
N a x p = N d x n ,where x p and x n are the depletion layer widths in the p, and n regions

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
⇒ 1×1017 cm-3 × x p = 5 ×1017 cm -3 × x n ⇒ x p = 5x n d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co

x p + x n = W ⇒ 6x n = W
th inc de f i es
of rk ( stu e o tat

⇒ x n = 1.93 ×10-6 cm ; x p = 9.67 ×10-6 cm

ity o g us d S
te is ss th ite
in f th se for Un

( ) (
No. of exposed acceptors = N a x p A = 1×1017 cm -3 × 9.67 ×10-6 cm × 10−4 cm 2 ) ( )
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec

= 9.67 × 107
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk

Prob. 5.10
th d wo

A p-n junction diode has a doping concentration of 1016 cm-3 on the p- side, and is very
an his

e
T

highly doped on the n-side. The intrinsic carrier concentration is 109 cm-3, bandgap is 2
eV and εr=15. Sketch the band diagram for a reverse bias of 2V, and calculate the values
of band edges with respect to the quasi-Fermi levels far from the junction. Calculate the
depletion charge per cm2 on the n-side. If an electron at the conduction band edge on the
p-side goes over to the n-side without scattering, calculate its velocity. Electron and hole
effective masses = 0.4m0.
N a = 1016cm -3
N d → high
⎛ qφ F,p ⎞ ⎛ φ F,p ⎞
⎜⎜ ⎟⎟ ⎜⎜ ⎟⎟
⎝ kT ⎝ 0.026 eV ⎠
p = Na = n ie ⎠ 16
⇒ 10 cm = 10 cm-3
( 9 -3
)⋅e ⇒ φ F,p = 0.42 eV
Eg
φ F,n = = 1 eV
2
Barrier height Δφ = φ F,n + φ F,p = 1.42 eV
N a x p = N d x n , where x p , x n are the depletion layer widths on the p, and n sides
⇒ N d x n ≈ N a W, since x p + x n = W and x p ? x n

In equilibrium, W =
2εS ( Δφ+Vr )
=
(
2 × 15 × 8.86 ×10−14 F/cm × (1.42 V + 2 V ) )
qN a (1.6 ×10 −19
C ) × (10
16
cm-3 )
= 7.54 ×10−5 cm = 0.75 µm

. We or
m W ina g

b)
ed e n
in
no W iss ea s
( ) (
⇒ N d x n = 7.54 ×10−5 cm × 1016cm -3 = 7.54 ×1011 cm -2 )

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig

Energy of electron from E c on n-side, E = Δφ+Vr = 1.42 eV + 2 eV

or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

2E (
2 × 3.42 ×1.6 × 10−19 J ) = 1.73 ×10
of rk ( stu e o tat

6
ity o g us d S

⇒v= = m/s
m* −31
te is ss th ite

0.4 × 9.11×10 kg
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

Prob. 5.11
s
ill o u vi pr
w le co ro is

In a p-n junction, the n-side doping is five times the p-side doping. The intrinsic carrier
sa eir is p rk
th d wo

concentration =1011 cm-3 and bandgap is 2eV at 100 C. If the built-in junction potential is
an his

e
T

0.65V, what is the doping on the p- side? If the relative dielectric constant of this
semiconductor is 10, what is the depletion capacitance at 2 V reverse bias for a diode of
cross-sectional area of 0.5 cm2? Draw a qualitatively correct sketch of the band diagram
and label the depletion widths and voltage drops for this bias.
 kT ⎛ N a ( 5N a ) ⎞
V0 = ln ⎜ ⎟ = 0.65 V
q ⎝ n i 2 ⎠
⎛ 373 K ⎞ ⎡ 2
⎤
= ( 0.026 eV ) ⎜ (
11
⎟ ⎣⎢ln ( 5 ) + 2 ln ( N a ) − ln 10 ⎦⎥ )
⎝ 300 K ⎠
1

. We or
⇒ ln ( N a ) = ( 20.11 + 49.05 ) = 34.58

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
2
d th g. in t la
an on in rs h
k g rn to rig

⇒ N a = 1.04 ×1015 cm -3
or in a uc y
w d le tr p

er ld
e lu nt ns co

⇒ N d = 5N a = 5.2 ×1015 cm -3
th inc de f i es
of rk ( stu e o tat
ity o g us d S

2εS ( Δφ+Vr ) ⎛ N a +N d ⎞
te is ss th ite
in f th se for Un

W= ⎜ ⎟
gr w in e
th t o a ly by

q ⎝ N a N d ⎠
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

( )
2 × 10 × 8.85 ×10−14 F/cm ( 0.65 V + 2 V ) ⎛
s

1.04 + 5.2
ill o u vi pr

⎞
=
w le co ro is

⎜ -3 ⎟
sa eir is p rk

−19 15
1.6 ×10 C ⎝ 1.04 × 5.2 × 10 cm ⎠
th d wo
an his

= 1.84 µm
T

Cd =
εA
=
(
10 × 8.85 ×10−14 F/cm × 0.5 cm 2 )
= 2.4 nF
W 1.84 ×10−4 cm

Prob. 5.12
a) Calculate contact potential V0, in a Si p-n junction at 300 K.
kT N a N d
V0 = ln
q n i2
Na Nd
V0 = 0.0259 ln
(1.5 ⋅ 1010 ) 2
b) Plot E0 vs. Nd
 T
an his
th d wo
sa eir is p rk
w le co ro is
ill o u vi pr
de f a rse de ot
st ny s d s ec
ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
of rk ( stu e o tat
th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)
Prob. 5.13
Find the electron diffusion and drift currents at xn in a p+-n junction.
xn
Dp q ⋅V - kT
Lp
I p (x n ) = q ⋅ A ⋅ ⋅ pn ⋅ e kT
⋅e for V ?
Lp q
Dp q ⋅V
I = I p (x n = 0) = q ⋅ A ⋅ ⋅ p n ⋅ e kT
Lp
Assuming space charge neutrality, the excess hole distribution is equal to the
excess electron distribution δn(x n ) = δp(x n )
q ⋅V
dδp Dn - Lx n
I n (x n )diff = q ⋅ A ⋅ Dn ⋅ = - q⋅A⋅ ⋅ p n ⋅ e kT ⋅ e p
dx n Lp
q ⋅V
pn ⎡ ⎛ - Lx n ⎞ - Lx n ⎤
I n (x n )drift = I - I n (x n )diff - I p (x n ) = q ⋅ A ⋅ ⋅ ⎢ D n ⋅ ⎜1 - e p ⎟ + D n ⋅ e p ⎥ ⋅ e kT
Lp ⎣ ⎝ ⎠ ⎦

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
Prob. 5.14
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig

A Si junction has N a = 1017 and N d = 1016 cm1 3 . Find (a)EF, Vo, and band diagram
1
or in a uc y
w d le tr p

er ld
cm3
e lu nt ns co
th inc de f i es

and (b) compare this value of Vo to that from Equation 5-8.

of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo

pp 1017 1
an his

cm3
T

(a) Eip - E F = kT ⋅ ln = 0.0259eV ⋅ ln 10 1

= 0.407eV
ni 1.5 ⋅10 cm3

nn 1016 cm1 3
E F - Ein = kT ⋅ ln = 0.0259eV ⋅ ln = 0.347eV
ni ⋅1010 cm1 3
1.50.754eV
q ⋅ Vo = 0.407eV + 0.347eV = 0.754eV
0.407eV
0.347eV

Na Nd 1017 cm1 3 ⋅1016 cm1 3

(b) q ⋅ Vo = kT ⋅ ln = 0.0259eV ⋅ ln 2
= 0.754eV
n i2 1.5 ⋅1010 1 3 ( )
cm
 0ε
W=

=
V0 =

x p0 =
x n0 =

1+
1+
q
kT
Prob. 5.15

W
W

∈Si
Na
Na

Nd
Nd
W = 0.334 µm

−q Nd x n0
V0 = 0.8498 V

⎜
ni

V0 = 0.0259V ln
N N

2 ∈Si V0 ⎛ 1
ln a 2 d

+
Find V0, xn0, xp0, Q+, and

= 0.83 nm
T
4 ⋅1018

= 0.333 µm
ε

an his

q ⎝ N a N d ⎠
⎟
1 ⎞
1
O

th d wo
(1.5 ⋅10
cm3
10

sa eir is p rk
w le co ro is
1

ill o u vi pr
cm3

= −5.1⋅104 V/cm
⋅1016

de f a rse de ot
) 2

st ny s d s ec
1

Q + = −Q − = q A x n0 N d = 0.107 nC
ro p an o te
cm3

y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
in Si at 300 K.

ity o g us d S
of rk ( stu e o tat
th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)
Prob. 5.16
Describe the effect on the hole diffusion current of doubling the p+ doping.
The depletion edge and electron diffusion current on the p+ side may be ignored and

L p = D p ⋅ τ p = 20 cms ⋅ 50 ⋅10-9s = 10-3cm = 10µm

2

x
n i2 ⎛ qV ⎞ - L
δp = ⋅ ⎜ e kT -1⎟ ⋅ e p
N d ⎝ ⎠
2
d(δp)
=- ⋅
1 n i2 ⎛ qV
⋅ ⎜ e -1⎟ ⋅ e
kT
x
⎞ - Lp 1
= - -3 ⋅
1010 cm1 3 ⎛ 0.6 ⎞ - 10µm
⋅ ⎜ e 0.026
(
-1⎟ ⋅ e
2µm
)
= -8.6 ⋅1016 1
16 1 cm 4
dx L p N d ⎝ ⎠ 10 cm 10 cm3 ⎝ ⎠
d(δp)
= 1.609 ⋅10-19C ⋅ 20 cms ⋅ 8.6 ⋅1016 cm1 4 = 0.277 cmA2
2
J p (diffusion) = - q ⋅ D p ⋅
dx
Since this is independent of the p+ doping, there will be no change.

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
Prob. 5.17 an on in rs h
k g rn to rig
or in a uc y

For the Si p+-n junction, find I for Vf=0.5V.

w d le tr p

er ld
e lu nt ns co

Dp Dp
th inc de f i es

q ⋅V
n i2 qkT⋅V
of rk ( stu e o tat

I = q⋅A⋅ ⋅ p n ⋅ e kT = q ⋅ A ⋅ ⋅ ⋅e
ity o g us d S

Lp D p ⋅τ p nn
te is ss th ite
in f th se for Un

2
(1.5 ⋅1010 1
)2 0.5eV
gr w in e

10 cms
th t o a ly by

-19 -3 2 cm3
I = 1.6 ⋅10 C ⋅10 cm ⋅ ⋅ ⋅ e 0.0259eV = 0.55µA
y ar d le d

16 1
ro p an o te

10 cms ⋅10−6 s
2
5 ⋅10
st ny s d s ec

cm3
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk

Prob. 5.18
th d wo
an his

(a) Why is Cs negligible in reverse bias?

T

For reverse bias of more than a few tenths of a volt, Δpn ≈ -pn. Changes in the reverse
bias do not appreciably alter the (negative) excess hole distribution. The primary
variation is in the width of the depletion region, giving rise to the junction capacitance.

(b) With equal doping, which carrier dominates injection in a GaAs junction?
Electron injection dominates since μn?μp. With nn=pp it is clear that a carrier with higher
mobility will determine the injection.
Prob. 5.19
(a) Find Cj for V=-10V for a Si p+-n junction 10−2 cm2 in area with N d = 1015 1
cm3
.
On the n side,

Ei 0.843 eV
Ec
EF 0.555 eV
0.288 eV
EF
Ei
Ev
Nd 1015 cm1 3
E F - E in = kT ⋅ ln = 0.0259eV ⋅ ln = 0.288eV
ni 1.5 ⋅1010 cm1 3
On the p-side, E ip - E F = 1
2 ⋅ E g ≅ 0.555eV
q ⋅ Vo = 0.555eV+0.288eV = 0.834eV
1 1
-19 -14 F
A ⎛ 2 ⋅ q⋅∈⋅N d ⎞ 10 cm ⎛ 2 ⋅1.6 ⋅10 C ⋅11.8 ⋅ 8.85 ⋅10 cm
2 -2 2 ⋅1015 1
cm3
⎞ 2 -11
C j = ⋅ ⎜ ⎟ = ⋅ ⎜ ⎟⎟ = 2.78 ⋅10 F
2 ⎝ Vo - V ⎠ 2 ⎜ 0.834eV - (-10eV)

. We or
m W ina g
⎝

b)
⎠

ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig

(b) What is W just prior to avalanche?

or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

From Figure 5-22, Vbr=300V from Figure 5-22

of rk ( stu e o tat
ity o g us d S

1 1

⎛ 2⋅∈s ⋅Vbr ⎞ 2 ⎛ 2 ⋅11.8 ⋅ 8.85 ⋅10-14 cm

te is ss th ite

F
⋅ 300V ⎞ 2
in f th se for Un

-3
W = ⎜ = ⎜ ⎟ = 1.98 ⋅10 cm = 20µm
gr w in e

⎟
th t o a ly by

⎜ -19 15 1 ⎟
⎝ q ⋅ N d ⎠ 1.6 ⋅10 C ⋅10 cm3
y ar d le d

⎝ ⎠
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is

Prob. 5.20
sa eir is p rk
th d wo
an his

Show Εo depends on doping of a lightly doped substrate.

T

1 1
-1 2
q ⎡ 2 ⋅ q ⋅ Vo ⎛ N a ⋅ N d ⎞ ⎤ ⎡ 2 ⋅ q ⋅ V ⎛ 1
2
1 ⎞ ⎤
εo = - ⋅ Nd ⋅ x no = - ⎢ ⋅ ⎜ ⎟ ⎥ = - ⎢
o
⋅ ⎜ + ⎟ ⎥
∈ ⎢⎣ ∈ ⎝ N a +Nd ⎠ ⎥⎦ ⎢⎣ ∈ ⎝ Na Nd ⎠ ⎥⎦
the lightly doped side dominates so the doping variation of Vo has only a minor effect
1
q ⎡ 2 ⋅ q ⋅ Vo ⋅ Nd ⎤ 2
ε o = - ⋅ Nd ⋅ x no = - ⎢ ⎥
∈ ⎣ ∈ ⎦
Prob. 5.21
For the abrupt Si n+-p junction, calculate the peak electric field and depletion
capacitance for reverse bias. Find the total excess stored electric charge and the electric
field far from the depletion region on the p side.
Depletion region is mostly on the p-side.
Vtotal = Vr + Vo ; Vr = 100V
2 ∈Si Vtotal ⎛ 1 1 ⎞
W= ⎜ + ⎟
q ⎝ N a N d ⎠
1
Since N d is very high, may be neglected.
Nd
2 ∈Si Vtotal 2 ⋅11.8 ⋅ 8.85 ⋅10-14 cmF ⋅100V
W= = = 1.14µm
q ⋅ Na 1.6 ⋅10-19 C ⋅1017 cm1 3
2 ⋅ Vtotal 2 ⋅100V
ε= = = 1.75 ⋅106 cm
V

. We or
-4

m W ina g

b)
W 1.14 ⋅10 cm

ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
∈ A 11.8 ⋅ 8.85 ⋅10-14 cm F
⋅ 0.0001cm 2 d th g. in t la
an on in rs h
k g rn to rig

C j = Si = = 0.916pF
or in a uc y

1.14 ⋅10-4 cm
w d le tr p

er ld
W
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite

Qn
I = 20 ⋅10-3A =
in f th se for Un
gr w in e
th t o a ly by

τn
y ar d le d
ro p an o te
st ny s d s ec

Q n = 20 ⋅10-3A ⋅ 0.1 ⋅10-6s = 2 ⋅10-9C

de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo

Far from the junction on the p-side, the current is only hole drift.
an his

e
T

I = 20 ⋅10-3A = q ⋅ A ⋅ p ⋅ µ p ⋅ ε = 1.6 ⋅10-19 C ⋅ 0.0001cm 2 ⋅1017 V⋅s ⋅ ε

2
1
cm3
⋅ 200 cm
ε = 62.5 V
cm
Prob. 5.22
Find the electron injection efficiency In/I.

Dn ⎛ qkT⋅V ⎞
q⋅A⋅ ⋅ n p ⋅ ⎜ e -1⎟
In Ln ⎝ ⎠ 1
(a) = =
I ⎛ D D ⎞ ⎛ q⋅V ⎞ DL p
q ⋅ A ⋅ ⎜ p ⋅ p n + n ⋅ n p ⎟ ⋅ ⎜ e kT -1⎟ 1+ p n ⋅ n
⎜ L p Ln ⎟ Dn Lp n p
⎝ ⎠ ⎝ ⎠

D np µ np pn pp D pn ⋅ p n µ pn ⋅ p p
(b) = and = gives p = p
D pn µ pn np nn Dn ⋅ n p µn ⋅ nn
In 1 I
= n p
so making n n ? p p (i.e. using n + - p) increases n
I L ⋅ µ p ⋅ pp
n I
1+ p n
L ⋅ µn ⋅ nn
p

. We or
m W ina g

b)
ed e n
in
no W iss ea s
Prob. 5.23

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig

Find Ip(xp) when pp=nn.

or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

⎛ D p Dn ⎞ ⎛ qV ⎞
of rk ( stu e o tat

I = q ⋅ A ⋅ ⎜ ⋅p + ⋅ n ⋅ e kT -1⎟
ity o g us d S

⎜ L p n L n p ⎟⎟ ⎜
te is ss th ite

⎝ ⎠ ⎝ ⎠
in f th se for Un
gr w in e
th t o a ly by

is composed of
y ar d le d
ro p an o te
st ny s d s ec

x
Dn - p ⎛ qV ⎞
de f a rse de ot

s
ill o u vi pr

I n (x p ) = q ⋅ A ⋅ ⋅ n p ⋅ e Ln ⋅ ⎜ e kT -1⎟
w le co ro is

Ln
sa eir is p rk

⎝ ⎠
th d wo
an his

⎡ D ⎛ - x p ⎞ D p ⎤ ⎛ qV ⎞
T

I p (x p ) = I - I n (x p ) = q ⋅ A ⋅ ⎢ n
⋅ n p ⋅ ⎜1-e Ln ⎟ + ⋅ p ⎥ ⋅ ⎜ e kT -1⎟
⎢ L n ⎜ ⎟ L p n ⎥ ⎝ ⎠
⎣ ⎝ ⎠ ⎦
2
n
Since N a =N d , n p =p n = i giving
Na
x
⎡ D ⎛ - p ⎞ D p ⎤ n 2 ⎛ qV ⎞
Ln
I p (x p ) = q ⋅ A ⋅ ⎢ n ⋅ ⎜1 - e ⎟ + ⎥ ⋅ i ⋅ ⎜ e kT - 1⎟
⎢ L ⎜ ⎟ L p ⎥ N a ⎝ ⎠
⎣ n ⎝ ⎠ ⎦
Prob. 5.24
For the given p-n junction, calculate the built-in potential, the zero-bias space charge
width, and the current for a 0.5V forward bias.
(a) Calculate built-in potential:
for N a =1015 1
cm3
and N d =1017 1
cm3

kT ⎡ N a N ⎤
Vo = φFP +φFN = ⋅ ⎢ln +ln d ⎥
q ⎣ n i n i ⎦
⎡ 1015 1017 ⎤
Vo = 0.026V ⋅ ⎢ln 10
+ln ⎥
⎣ 1.5 ⋅10 1.5 ⋅1010 ⎦
Vo = 0.026V ⋅ [11.1+15.7 ] = 0.70V
(b) Calculate total width of space change region

2 ∈s ⎛ N +N ⎞
W= ⋅ ⎜ a d ⎟ ⋅ Vo

. We or
m W ina g
q ⎝ N a N d

b)
ed e n
in
no W iss ea s

itt id tio
⎠
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig

Thermal equilibrium means total potential φT across the P-N junction equals Vo
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat

2 ∈s ⎛ N +N ⎞
ity o g us d S

W= ⋅ ⎜ a d ⎟ ⋅ Vo
te is ss th ite

q ⋅ Na ⎝ N a N d
in f th se for Un

⎠
gr w in e
th t o a ly by
y ar d le d

2 ∈s ⎡ N a ⎤
ro p an o te
st ny s d s ec

W= ⋅ ⎢1+ ⎥ ⋅ Vo
de f a rse de ot

q ⋅ N a ⎣ N d ⎦
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo

2 ⋅ 8.85 ⋅10-14
( F
⋅11.8 )⋅ 1 ⎡ 1015 1 ⎤
an his

cm cm3
W= ⎢1 + 17 ⎥ ⋅ 0.70V
T

−19 15
1.6 ⋅10 C 10 1
cm3 ⎢⎣ 10
1
cm3 ⎥⎦
W = 1.3 ⋅10-8 cm 2
V
⋅ [1 + .01] ⋅ 0.70V = 9.6 ⋅10-5 cm = 0.96 microns
(c) Forward bias current:
cm 2 cm 2
µ n = 1500 µ p = 450 τ = 2.5 ⋅10-3s n i = 1.5 ⋅1010 1
cm3
V ⋅s V ⋅s
⎛ kT ⎞ cm 2 cm 2
D n = µ n ⎜ ⎟ = 1500 ⋅ 0.026V = 38.9
⎝ q ⎠ V ⋅s s
⎛ kT ⎞ cm 2 cm 2
D p = µ p ⎜ ⎟ = 450 ⋅ 0.026V = 11.7
⎝ q ⎠ V ⋅s s
L n = D n ⋅ τ = 0.31cm L p = D p ⋅ τ = 0.17cm
⎛ D P D n ⎞
( )
J 0 = q ⋅ n i 2 ⋅ ⎜ + ⎟
⎝ N d ⋅ L P N a ⋅ L n ⎠
2
J 0 = 1.6 ⋅10-19 C ⋅ 1.5 ⋅1010
( )( 1
cm3 ) ⋅ (6.88 ⋅10-
18 cm 4
s + 1.25 ⋅10-15 cm 4
s ) = 4.5 ⋅10- 12 C
cm 2 ⋅s

0.7V ⎞
⎛ qkT⋅V ⎞ ⎡ ⎛⎜ 0.026V ⎟ ⎤
I = A ⋅ J 0 ⋅ ⎜ e -1⎟ = 0.001cm 2 ⋅ 4.5 ⋅10-12
( )( C
) ⋅ ⎢e ⎝ ⎠
-1⎥ = 2.2 ⋅10-3 A

. We or
cm 2 ⋅s

m W ina g

b)
ed e n
in
⎣⎢ ⎦⎥

no W iss ea s
⎝ ⎠

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig

Most of the current is carried by electrons because Na is less than Nd. To double the
or in a uc y
w d le tr p

er ld
e lu nt ns co

electron current, halve the acceptor doping.

th inc de f i es
of rk ( stu e o tat
ity o g us d S

Prob. 5.25
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by

Find the total reverse bias junction capacitance and forward bias electric field.
y ar d le d
ro p an o te
st ny s d s ec

For n + - p in reverse bias,

de f a rse de ot

s
ill o u vi pr
w le co ro is

2 ⋅1.6 ⋅10-19 C ⋅11.8 ⋅ 8.85 ⋅10-14 cm

sa eir is p rk

A⋅∈s A 2 ⋅ q⋅∈s 25µm 2 F

th d wo

Cj = = ⋅ ⋅ Na = ⋅ ⋅1016 1
= 4.2 ⋅10-15F
an his

cm3
W 2 Vo -V 2 ⎛ 1016 1 ⋅1020 1 ⎞
T

0.026V ⋅ ln ⎜ cm3 cm3 ⎟

- ( -2V )
⎜ 1.5 ⋅1010 1 2 ⎟
⎝ (
cm3 ⎠ )

For n + - p in forward bias,

0.5V
⎛ qV ⎞ -9 A ⎛ 0.026 ⎞
J = J o ⋅ ⎜ e − 1⎟ = 10 cm2 ⋅ ⎜ e
kT
− 1 ⎟ = 0.225 cmA2 because only drift current
⎝ ⎠ ⎝ ⎠
J = q ⋅ µ p ⋅ N a ⋅ ε in p region far from junction
0.225 cmA2 V
ε= -19 2 16
= 0.56
1.6 ⋅10 C ⋅ 250 cm
V⋅s ⋅10
1
cm3
cm
Prob. 5.26
In a p+- n junction with n-doping changed from Nd to 2Nd, describe the changes in
junction capacitance, built-in potential, breakdown voltage, and ohmic losses.
a) junction capacitance increases
b) built-in potential increases
c) breakdown voltage decreases
d) ohmic losses decrease

Prob. 5.27
Sketch the equilibrium band diagram with precise values for the bar.
on right side
Ei -E F
18 16
p = 10 1
cm3
= 10 1
cm3
⋅e kT

18
600K ⎛ 10 1
cm3
⎞
E i -E F = 0.026eV ⋅ ⋅ ln ⎜ 16 ⎟ = 0.24eV
300K ⎜ 10 1 ⎟ EC

. We or
⎝ cm3 ⎠

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
on left side d th g. in t la
an on in rs h
k g rn to rig

Na : n i
or in a uc y
w d le tr p

Ei
er ld
e lu nt ns co
th inc de f i es

32
n 2 10 1
of rk ( stu e o tat

cm6 0.24eV
= 2 ⋅1016
ity o g us d S

i
p = Na + 1
cm3
+ 0.046eV EF
te is ss th ite

p p
in f th se for Un

EV
gr w in e
th t o a ly by

Ei - E F
y ar d le d

16 16
p = 2.4 ⋅10 1
= 10 1
⋅e
ro p an o te

kT
st ny s d s ec

cm3 cm3
de f a rse de ot

s
ill o u vi pr

600K
w le co ro is

E i - E F = 0.026eV ⋅ ⋅ ln ( 2.4 ) = 0.046eV

sa eir is p rk
th d wo

300K
an his

e
T
Prob. 5.28
Plot Ip and In versus distance.
Assume that the minority carrier mobilities are the same as the majority carrier mobilities
given in Figure 3-23a.
2 2
µ n = 700 cm
V⋅s µ p = 250 cm
V⋅s
2 2 2 2
D n = 0.0259V ⋅ 700 cm
V⋅s = 18.13 s
cm
D p = 0.0259V ⋅ 250 cm
V⋅s = 6.475 s
cm

L n = D n τ n = 18.13 cms ⋅10-6s = 2.54 ⋅10-3cm L p = D p τ p = 6.475 cms ⋅10-6s = 4.26 ⋅10-3cm
2 2

n i2 2.25 ⋅1020 cm1 6

pn = = 17 1
= 2.25 ⋅103 cm1 3 n p = p n = 2.25 ⋅103 cm1 3
Na 10 cm3
qV 0.7
3
Δp n = p n ⋅ e = 2.25 ⋅10
kT 1
cm3
⋅e 0.0259
= 1.23 ⋅1015 1
cm3
Δn p = Δp n = 1.23 ⋅1015 1
cm3

xp xp xn xn
L - - Lp - -
I n (x p ) = qA n e Ln = 5 ⋅10-5 A ⋅ e 2.54⋅10 cm = 8.38 ⋅10-5 A ⋅ e
Lp

. We or
-3
4.26⋅10-3cm
I p (x n ) = qA e

m W ina g

b)
ed e n
in
no W iss ea s
τn τp

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co

I = 5 ⋅10-5 A + 8.38 ⋅10-5 A = 133.8µA

th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un

I n (x n ) = I - I p (x n ) I p (x p ) = I - I n (x p )
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 5.29
Find the new junction capacitance for the given changes.
1
⎛ N ⎞ 2
C j ∝ ⎜ d ⎟ C j,original = 10pF
⎝ Vr ⎠
1 1
⎛ 2 ⋅ N d ⎞
2 ⎛ N ⎞ 2
C j,new ∝ ⎜ ⎟ =
1
2 ⋅ ⎜ d ⎟ C j,new = 1
2 ⋅ C j,original = 5pF
⎝ 8 ⋅ Vr ⎠ ⎝ Vr ⎠

Prob. 5.30
Find the minimum width to ensure avalanche breakdown.
Vbr = 300V from Figure 5-22 and Equation 5-23b
Vr = V-Vo ; 300V and N a ? N d
1 1

⎡ 2⋅∈⋅Vr ⎤ 2 ⎡ 2 ⋅11.8 ⋅ 8.85 ⋅10-14 ⋅ 300V ⎤ 2

. We or
-3
x no ; W = ⎢ ⎥ = ⎥ = 2 ⋅10 cm = 20µm

m W ina g

b)
ed e n
⎢

in
no W iss ea s

itt id tio
-19

is e D t w
15 1
⎣ q ⋅ N d ⎦ ⎢⎣ 1.6 ⋅10 C ⋅10 cm3 ⎥⎦
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 5.31
Calculate the capacitance and relate to Na.

∈S q ⋅ N a ⋅∈S
C= ⋅A = A⋅
W 2 ( VO +VR )
Na
Vo = 0.55eV+.0259eV ⋅ ln
ni
1 1 V +V
2
= 2 ⋅ o R∈s
C A q ⋅ Na ⋅ 2
1
This means the slope of 1
C2
versus VR is 2
so knowing the area and material
A ⋅ q ⋅ N a ⋅ ∈2s
type allows N a to be found.
1
For N a = 1015 1
cm3
, Vo = 0.84eV → 2
= 1.197 ⋅10 22 CV2 ⋅ (0.84eV+VR )
C

. We or
1

m W ina g

b)
ed e n
For N a = 1017 cm1 3 , Vo = 0.94eV → = 1.197 ⋅10 22 CV2 ⋅ (0.94eV+VR )

in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
2
C an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 5.32
Calculate the Debye length for a Si p-n junction on the p-side with Na = 1018 cm-3 and Nd
= 1014, 1016, and 1018 cm-3. Compare with the calculated value of W for each case.
Find LD and W, leaving Nd as a variable.
1 1 1
⎡ ∈s ⋅kT ⎤ 2 ⎡ ∈S kT ⎤ 2 ⎡11.8 ⋅ 8.85 ⋅10-14 F
cm
⎤ 2 - 12 411
L D = ⎢ 2 ⎥ = ⎢ ⋅ ⎥ = ⎢ ⋅ 0.0259eV ⎥ N d = 1
⎣ q ⋅ N d ⎦ ⎣ q ⋅ N d q ⎦ ⎣ 1.6 ⋅10-19C ⎦ N d2
1 1

⎡ 2⋅∈s ⋅kT ⎛ N a ⋅ N d ⎞ ⎛ 1 1 ⎞ ⎤ 2 ⎡⎛ Nd ⎞ ⎛ -18 3 1 ⎞ ⎤ 2

W= ⎢ 2
⋅ ⎜ ln ⎟ ⋅ ⎜ + ⎟ ⎥ =581 cm1 2 ⋅ ⎢⎜ ln ⎟ ⋅ ⎜10 cm + ⎟ ⎥
⎢⎣ q ⎝ n i2 ⎠ ⎝ N a N d ⎠ ⎥⎦ ⎢⎣⎜⎝ 225 cm3
1 ⎟ ⎝
⎠ N d ⎠ ⎥⎦
Plugging the doping values into these equations:
Nd (cm-3) LD (cm) W (cm) LD / W (%)
1014 4.11 x 10-5 3.01 x 10-4 7.3

. We or
1016 4.11 x 10-6 3.27 x 10-5 8.0

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
1018 4.11 x 10-7 4.93 x 10-6 d th g. in t la
an on in rs h
12.0
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S

The Debye length varies from 7 to 12 percent of W across this doping range.
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 5.33
For the given symmetric p-n Si junction, find the reverse breakdown voltage.
-x p0 = -W/2 x n0 = W/2

ε0

W
Na = Nd → x n0 = x p0 =
2
εo = q ⋅ Na ⋅ x n0 = q ⋅ Na ⋅ W
∈ ∈ 2
The breakdown voltage plus built-in voltage is:

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
x n0

∫ ε ⋅ dx = the area under the triangle

an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co

-x p0
th inc de f i es

1 ⎛ 2⋅∈⋅ε o ⎞ ∈⋅ε o2
of rk ( stu e o tat

W
ity o g us d S

Vbr +Vo = ε o ⋅ x n0 = ε o ⋅ = ε o ⋅ ⋅ ⎜ ⎟ =
te is ss th ite

2 2 ⎝ q ⋅ N a ⎠ q ⋅ N a
in f th se for Un
gr w in e
th t o a ly by

11.8 ⋅ 8.85 ⋅10-14 cm

y ar d le d

F
⋅ (5 ⋅105 cm
V 2
)
ro p an o te
st ny s d s ec

= = 16.32V
de f a rse de ot

-19 17 1
1.6 ⋅10 C ⋅10 cm3
s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
 Prob. 5.34

T
an his
th d wo
sa eir is p rk
w le co ro is
ill o u vi pr
de f a rse de ot
st ny s d s ec
ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
of rk ( stu e o tat
th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)
Prob. 5.35
Find the stored charge Qp as a function of time in the n-region if a long p+-n forward
bias current is switched from IF1 to IF2 at t = 0.
I

I F2

I F1
t

Q p (0) = I F1 ⋅ τ p
Q p (∞) = I F2 ⋅ τ p
Q p (t) dQ p

. We or
I F2 = +

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
τp dt

t p or em ch
d th g. in t la
an on in rs h
k g rn to rig

Taking the Laplace transform

or in a uc y
w d le tr p

er ld
e lu nt ns co

I F2 Q p (s)
th inc de f i es
of rk ( stu e o tat

= + s ⋅ Q p (s) - I F1 ⋅ τ p
ity o g us d S

s τp
te is ss th ite
in f th se for Un
gr w in e

⎛ I ⎞ 1
th t o a ly by

Q p (s) = ⎜ F2 + I F1 ⋅ τ p ⎟
y ar d le d
ro p an o te

⎝ s ⎠ s + τ1p
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is

Transforming back to time domain

sa eir is p rk
th d wo

- -
( ) +I
t t
an his

Q p (t) = I F2 ⋅ τ p ⋅ 1- e ⋅ τp ⋅ e
τp τp
T

F1
Prob. 5.36
The forward current in a long p+-n diode is suddenly raised from 0 to I at t = 0.
(a) Find and sketch Qp(t).
Qp ( t ) dQp ( t )
I= +
τp dt
- τt
Qp ( t ) =A+Be p

at t = 0, Qp(0) = A + B = 0
at t -> infinity, Qp(∞) = A = I τp
thus, B = - I τp
- τtp
(
Qp ( t ) = I⋅ τp 1- e )

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
(b) Find Δpn(t) and v(t) in the quasi-steady state approximation.
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y

∞
w d le tr p

- Lxnp
er ld
e lu nt ns co

If Qp = q ⋅ A ⋅ ∫ Δpn ⋅ e ⋅ dx n = q ⋅ A ⋅ Lp ⋅ Δp n
th inc de f i es
of rk ( stu e o tat

0
ity o g us d S
te is ss th ite
in f th se for Un

Qp ( t )
gr w in e

Δp n ( t ) =
th t o a ly by

Then
y ar d le d

q ⋅ A ⋅ Lp
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr

- τtp
( )
w le co ro is

I ⋅ τp ⋅ 1 - e
sa eir is p rk

qv
th d wo

Δp n ( t ) = p n ⋅ e kT
=
an his

q ⋅ A ⋅ Lp
T

kT ⎛ Δp n ( t ) ⎞
Thus v(t) = ⋅ ln ⎜ ⎟
q ⎝ p n ⎠

v(t) =
kT ⎜ p
⎛ I ⋅ τ ⋅ 1 - e τ-tp
⋅ ln ⎜
( ) ⎞⎟⎟
q ⎜ q ⋅ A ⋅ L p ⋅ p n ⎟
⎝ ⎠
Prob. 5.37
Sketch the voltage across a 1 kΩ resistor in series with a diode (offset 0.4 V, resistance
400 Ω) and a voltage source of 2 sin ωt.
An ideal diode is a perfect short (resistance is zero) when the voltage across the diode is
greater than the offset voltage. If the voltage is less, the diode is a perfect open
(resistance is infinite). Thus,
v s < 0.4, v 0 = 0
(v s − 0.4 ) ⋅ 1kΩ
v s > 0.4, v 0 =
1kΩ + 400Ω

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
 Prob. 5.38

T
an his
Plot current versus voltage.

th d wo
sa eir is p rk
w le co ro is
ill o u vi pr
de f a rse de ot
st ny s d s ec
ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
of rk ( stu e o tat
th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)
 Prob. 5.39

0
varies linearly.

I = I p ( x n =0 ) = - q ⋅
T
l
an his
Q p = q ⋅ A ⋅ ∫ ∂p ⋅ dx n = q ⋅ A ⋅

th d wo
sa eir is p rk
A ⋅ D p ⋅ Δp n

w le co ro is
2

ill o u vi pr
l ⋅ Δp n

de f a rse de ot
st ny s d s ec
ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
of rk ( stu e o tat
th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)
Find Qp and I when holes are injected from p+ into a short n-region of length l, if δp
Prob. 5.40
Find the hole distribution and the total current in a narrow-base diode.
d 2 ∂p ( x n ) ∂p ( x n )
=
dx 2n L2p
- Lx np xn

∂p ( x n ) =Ce +De
Lp

Boundary conditions:
When x n = 0, ∂p = Δp n = C + D
- LlP l
When x n = l , ∂p = 0 = Ce + De LP
Thus,
l
Δp n e LP
C = l - LlP
e LP - e
- LlP
-Δp n e

. We or
m W ina g
D = Δp n − C =

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
- LlP

t p or em ch
l
e LP - e d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

Plugging C and D back into the solution

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat

l - xn xn - l
⎡ - ⎤
ity o g us d S

Δp n ⎢e −e
Lp Lp
te is ss th ite

⎣ ⎥⎦
in f th se for Un

a) ∂p ( x n ) =
gr w in e
th t o a ly by

l - Llp
e -e
Lp
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

l l
ill o u vi pr

⎡ d∂p ( x n ) ⎤ -q ⋅ A ⋅ Dp ⋅ Δp n ⎡ e Lp + e − Lp ⎤
w le co ro is

I= ⎢-q ⋅ A ⋅ D p ⋅ = ⋅ ⎢- l ⎥
sa eir is p rk

⎥
th d wo

⎣ dx n ⎦ x →0 Lp ⎢⎣ e Lp - e− Lp ⎥⎦
an his

n
T

⎡ q ⋅ A ⋅ D p l ⎤ ⎛ qV ⎞
b) I= ⎢ ⋅ p n ⋅ ctnh ⎥ ⋅ ⎜ e kT -1⎟
⎢⎣ L p L p ⎥⎦ ⎝ ⎠
Prob. 5.41
For the narrow-base diode, find the current components due to recombination in n, and
recombination at the ohmic contact.
The steady-state charge stored in the excess hole distribution is
x x
l ⎡ - Ln
l n
L ⎤
Q p = q ⋅ A ∫ ∂p(x n ) ⋅ dx n = q ⋅ A ∫ ⎢C ⋅ e p + D ⋅ e p ⎥ ⋅ dx n
0 0
⎣ ⎦

) ( )
l
- l
⎣
(
Q p = q ⋅ A ⋅ L p ⎡⎢-C e Lp -1 +D e p -1 ⎤⎥
L

⎦
l - Llp
e p+e -2
L

Q p = q ⋅ A ⋅ L p ⋅ Δp n ⋅ l - Llp
e -e
Lp

The current due to recombination in n is

Qp qAL p p n ⎡ l l ⎤ ⎛ qV ⎞
= ⎢ctnh − csch ⎥ ⎜ e kT − 1⎟
τp τ p ⎣⎢ Lp L p ⎦⎥ ⎝

. We or
⎠

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
Lp Dp d th g. in t la
using
an on in rs h
=
k g rn to rig

τp Lp
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

Qp qAD p p n ⎡ l ⎤ ⎛ qV
of rk ( stu e o tat

⎞
ity o g us d S

= ⎢ tanh ⎥ ⎜ e kT − 1⎟
te is ss th ite

τp L p ⎣⎢ L p ⎦⎥ ⎝
in f th se for Un

⎠
gr w in e
th t o a ly by
y ar d le d

The current due to recombination at xn = l,

ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr

Qp ⎡ qALp pn l ⎤ ⎛ qV ⎞
w le co ro is

I− csch ⎥ ⎜ e kT − 1⎟
sa eir is p rk

= ⎢
th d wo

τ p ⎣⎢ τ p Lp ⎥⎦ ⎝ ⎠
an his

e
T

These correspond to the base recombination and collector currents in the p-n-p BJT with
VCB = 0 given in Equation 7-20.
Prob. 5.42

If the n region of a graded p+-n has Nd=Gxm, find ε , ε ( x), Q, and C .

o j

dε
0 W
q q q
a)
dx
= N d = Gx m →
∈ ∈ ∫ dε =
εo
G ∫ x mdx
∈ 0
m+1
q W
-ε o = G
∈ m+1
q W m+1
εo = - G
∈ m+1
ε x
q qG
b) ∫ dε = G ∫ x dx → ε(x) = ( )
m
x m+1 - W m+1
0
∈ W
∈ (m+1)
V W
dV o

ε=- → - ∫ dV = ∫ ε ⋅ dx
dx V 0

. We or
W

m W ina g
qG ⎛ x m+2

b)
ed e n
⎞

in
no W iss ea s

itt id tio
is e D t w
t p or em ch
- (Vo - V) = - W m+1 ⋅ x ⎟
⎜
∈ (m+1) ⎝ m+2 d th g. in t la
an on in rs h
k g rn to rig
⎠0
or in a uc y
w d le tr p

er ld
e lu nt ns co

qG ⎛ W m+2 (m+2) ⋅ W m+2 ⎞ qG -(m+1)W m+2

th inc de f i es

- (Vo - V) = - ⎟ = ⋅
of rk ( stu e o tat

⎜
∈ (m+1) ⎝ m+2 m+2 ⎠ ∈ (m+1) m+2
ity o g us d S
te is ss th ite
in f th se for Un

qG ⋅ W m+2
gr w in e
th t o a ly by

Vo - V =
y ar d le d

∈ (m+2)
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr

W
qAGW m+1
w le co ro is

m
c) Q = qA ∫ Gx dx =
sa eir is p rk
th d wo

m+1
an his

0
T

m+1
m+1
⎛ (V -V)⋅∈⋅(m+2) ⎞ m+2
W m+1 = (W m+2 m+2
) = ⎜ o ⎟
⎝ qG ⎠
m+1
qAG ⎛ (Vo -V)⋅∈⋅(m+2) ⎞ m+2
Q= ⋅ ⎜ ⎟
m+1 ⎝ qG ⎠
 m+1

d) Q = qAG ⋅ ⎛ (Vo -V)⋅∈⋅(m+2) ⎞ m+2

⎜ ⎟
m+1 ⎝ qG ⎠
m+1
-1
dQ qAG ⎛ (Vo -V)⋅∈⋅(m+2) ⎞ m+2 ∈⋅(m+2)
= ⋅ ⎜ ⎟ ⋅
d(Vo -V) m+1 ⎝ qG ⎠ qG
-1
dQ A⋅∈⋅(m+2) ⎛ (Vo -V)⋅∈⋅(m+2) ⎞ m+2
= ⋅ ⎜ ⎟
d(Vo -V) m+1 ⎝ qG ⎠
1
1
dQ ⎛ qG ⎞ m+2
d(Vo -V)
= A⋅ ∈ ( )
m+2 m+2
⋅ ⎜ ⎟
⎝ (Vo -V)⋅∈⋅(m+2) ⎠
1
dQ ⎛ qG⋅∈m+1 ⎞ m+2
= A ⋅ ⎜ ⎟
d(Vo -V) ⎝ (Vo -V) ⋅ (m+2) ⎠

. We or
Prob. 5.43

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
Draw the equilibrium band diagram and explain whether the junction is a Schottky or
an on in rs h
k g rn to rig

ohmic contact. Describe how to change the metal work function to switch the
or in a uc y
w d le tr p

er ld
e lu nt ns co

contact type.
th inc de f i es
of rk ( stu e o tat
ity o g us d S

Na 1018 cm1 3
te is ss th ite
in f th se for Un

φs = χ +0.55eV+kT ⋅ ln = 4eV+0.55eV+0.0259eV ⋅ ln = 5.02eV

gr w in e

ni 1.5 ⋅1010 cm1 3

th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec

For this p-type semiconductor, (Φm = 4.6eV) < (Φs = 5.02eV); so, the junction is a
de f a rse de ot

s
ill o u vi pr

Schottky barrier.
w le co ro is
sa eir is p rk
th d wo
an his

The junction becomes an ohmic contact at Φm > Φs. The metal work function must be
T

raised to 5.02eV to make this an ohmic contact.

Schottky Barrier Ohmic Contact

4eV 4eV

4.6eV

5.02eV 5.02eV 5.02eV

EFn EFn

EFs EFs

Metal Si Metal Si
 Prob. 5.44

T
an his
th d wo
sa eir is p rk
w le co ro is
ill o u vi pr
de f a rse de ot
st ny s d s ec
ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
Use InAs to make an ohmic contact to GaAs.

of rk ( stu e o tat
th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)
For further discussion, see Woodall, et al., J. Vac. Sci. Technol. 19. 626(1981).
 b)
Prob. 5.45

a) Ei - E F = kT ⋅ ln
ni
po

T
and 2.0V reverse bias (b).

an his
th d wo
sa eir is p rk
w le co ro is
ill o u vi pr
de f a rse de ot
st ny s d s ec
= 0.0259eV ⋅ ln

ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
1017 cm1 3

of rk ( stu e o tat
1.5 ⋅1010 cm1 3

th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
in
= 0.407eV

er ld
m W ina g
itt id tio
ed e n
. We or
b)
Draw the equilibrium band diagram (a) and the band diagrams for 0.3V forward bias
Prob. 5.46
We want to make a Schottky diode on one surface of an n-type semiconductor, and an
ohmic contact on the other side. The electron affinity is 5 eV, bandgap is 1.5 eV, and the
Fermi potential is 0.25 eV? What should be values of work functions of the two metals.
(Give your answer as greater than or less than certain values.) Sketch the band diagram
of the structure.

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T

Prob. 5.47
A semiconductor heterojunction is made between the following materials, A and B with
the following parameters:
EG (eV) χ (eV) Doping (cm-3) Length (μm) Ln,p (μm) ni (cm-3) τn,p (μs)
A: 2 4 NA=1020 0.5 10 108 10
16 10
B: 1 5 ND=10 0.1 100 10 1

Draw the equilibrium band diagram, marking off the band edge energies and EF, with
respect to the vacuum level.
Calculate the current density if the junction is forward biased such that the minority
concentrations are increased by a factor of 106.
(HINT: Use appropriate approximations. There is a lot of extraneous information here;
the answer is very simple. Remember that this is a p+-n junction, and the length of the
semiconductors is << diffusion length; the minority carrier concentration is zero at the
ohmic contacts at both ends of the device.)
 . We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is

( )
Δp n = p n ×106 = 104 cm -3 ×106 = 1010 cm -3
sa eir is p rk
th d wo
an his

L p = D p τ p ⇒ D p = L p 2 τ p = 100 cm 2 /s
T

dp ⎛ 1010 cm -3 ⎞
I ≈ I p = qD p
dx
( ) (
= 1.6 ×10 −19 C × 100 cm 2 /s × ⎜
0.1 ×
)10 −4
cm
⎟ = 16 mA/cm
2

⎝ ⎠
δp(x) is linear because length of n-region = L p

Prob. 5.48
A p-n junction diode has a doping concentration of 1017 cm-3 on the p- side, and double
that on the n-side. The intrinsic carrier concentration is 1011 cm-3, bandgap is 2 eV and
εr=15. Sketch the band diagram in equilibrium, and mark off the values of band edges
with respect to the Fermi level and the depletion widths on both sides.
Repeat the above for a heterojunction, where the bandgap on the n-side is reduced to 1
eV, and the electron affinity on the n-side is 4 eV. Other parameters are kept the same.
Bandoffsets are the same for conduction and valence band across the heterojunction.
 ⎛ (1017 cm -3 ) × ( 2 ×1017 cm -3 ) ⎞
kT ⎛ N a N d ⎞ ⎜ ⎟ = 0.734 V
V0 = ln ⎜ ⎟ = ( 0.0259 V ) × ln ⎜ 2
q ⎝ n i 2 ⎠ (10 cm )
11 -3 ⎟
⎝ ⎠
12
⎡ 2εV0 ⎛ N a +N d ⎞ ⎤

. We or
W = ⎢ ⎜ ⎟ ⎥

m W ina g

b)
ed e n
in
no W iss ea s
⎢⎣ q ⎝ N a N d

itt id tio
is e D t w
t p or em ch
⎠ ⎥⎦
d th g. in t la
an on in rs h
k g rn to rig
12
or in a uc y

⎡ 2 × (15 × 8.85 ×10−14 F/cm ) × ( 0.734 V ) ⎛ (1017cm -3 ) + ( 2 ×1017cm -3 ) ⎞ ⎤

w d le tr p

er ld
e lu nt ns co

= ⎢ ⎜ ⎟ ⎥
th inc de f i es

1.6 ×10−19 C ⎜ (1017 cm -3 ) × ( 2 ×1017 cm -3 ) ⎟ ⎥

of rk ( stu e o tat

⎢
ity o g us d S

⎣ ⎝ ⎠ ⎦
te is ss th ite

= 0.135 µm
in f th se for Un
gr w in e
th t o a ly by
y ar d le d

kT ⎛ N a ⎞ ⎛ 1017 cm -3 ⎞
ro p an o te
st ny s d s ec

ϕFp = Eip - E F = ln ⎜ =
⎟ ( 0.0259 V ) ⎜ 11 -3 ⎟ = 0.358 V
× ln
de f a rse de ot

q ⎝ n i ⎠ ⎝ 10 cm ⎠
s
ill o u vi pr
w le co ro is
sa eir is p rk

p-side:
th d wo
an his

E C - E F = 1 eV + 0.358 eV = 1.358 eV
T

E F - E V = 0.642 eV
kT ⎛ N d ⎞ ⎛ 2 ×1017 cm -3 ⎞
ϕFn = ln ⎜ ⎟ = ( 0.0259 V ) × ln ⎜ 11 -3 ⎟ = 0.376 V
q ⎝ n i ⎠ ⎝ 10 cm ⎠
n-side:
E C - E F = 1 eV - 0.376 eV = 0.624 eV
E F - E V = 1 eV + 0.376 eV = 1.376 eV
Nd 2
xp = W = W = 90 nm
Nd + Na 3
Na 1
xn = W = W = 45 nm
Nd + Na 3
 Heterojunction:

T
an his
th d wo
sa eir is p rk
w le co ro is
ill o u vi pr
de f a rse de ot
st ny s d s ec
ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
of rk ( stu e o tat
th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)