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    20V Dual Channel Nmoseft: Prospower Microelectronics Co., LTD

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    jaliltaghdareh
    The PS8205A is a 20V dual channel NMOSFET that provides excellent Rds(on) and low gate charge, making it suitable for high efficiency switching applications. It has a maximum drain current of 6A and Rds(on) of less than 28mOhm. The device uses advanced trench technology in a small TSSOP8 package. It is intended for uses such as battery management, motor control, DC-DC conversion, and CPU power delivery.

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    20V Dual Channel Nmoseft: Prospower Microelectronics Co., LTD

    Uploaded by

    jaliltaghdareh
    59 views9 pages
    The PS8205A is a 20V dual channel NMOSFET that provides excellent Rds(on) and low gate charge, making it suitable for high efficiency switching applications. It has a maximum drain current of 6A and Rds(on) of less than 28mOhm. The device uses advanced trench technology in a small TSSOP8 package. It is intended for uses such as battery management, motor control, DC-DC conversion, and CPU power delivery.

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    ps8205a

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    The PS8205A is a 20V dual channel NMOSFET that provides excellent Rds(on) and low gate charge, making it suitable for high efficiency switching applications. It has a maximum drain current of 6A and Rds(on) of less than 28mOhm. The device uses advanced trench technology in a small TSSOP8 package. It is intended for uses such as battery management, motor control, DC-DC conversion, and CPU power delivery.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    59 views9 pages

    20V Dual Channel Nmoseft: Prospower Microelectronics Co., LTD

    Uploaded by

    jaliltaghdareh
    The PS8205A is a 20V dual channel NMOSFET that provides excellent Rds(on) and low gate charge, making it suitable for high efficiency switching applications. It has a maximum drain current of 6A and Rds(on) of less than 28mOhm. The device uses advanced trench technology in a small TSSOP8 package. It is intended for uses such as battery management, motor control, DC-DC conversion, and CPU power delivery.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    PS8205A
    20V Dual Channel NMOSEFT

    Revision : 1.0
    Update Date : Apr. 2011

    ProsPower Microelectronics Co., Ltd 

     
    PS8205A
            
    20V Dual Channel NMOSFET

    2. Applications
    1. General Description
    y Battery management in nomadic equipment
    The PS8205A uses advanced trench technology
    and design to provide excellent Rds(on) with low y DC motor control
    gate charge. This device is suitable for use in high y DC-DC converters
    efficiency switching applications, DC/DC y Power management in portable/desktop PCs
    conversion, CPU power delivery and Synchronous
    rectification. Standard Product PS8205A is Pb-free
    (meets ROHS & Sony 259 specifications). It is
    offered in the very popular TSSOP8 package 3. Features

    y Vds=20V
    y Id=6A (Vgs=8V)
    y Rds(on)=<28mohm (Vgs=4.5V)
    y Low capacitance minimizes driver loss
    y Optimized gate charge minimizes switching
    loss

    Pin Configuration

       

    Pin Descriptions

    Pin Name Symbol Function


    Gate(4,5) G1/G2 Device Gate terminal
    Drain(1,8) D1/D2 Device drain terminal
    Source(2,3,6,7) S1/S2 Device source terminal

     
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    PS8205A
            
    20V Dual Channel NMOSFET

    Absolute Maximum Ratings


    Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
    device. These stress ratings only, and functional operation of the device at these or any conditions beyond
    those indicated under recommended Operating Conditions is not implied. Exposure to “Absolute Maximum
    Rating” for extended periods may affect device reliability. Use of standard ESD handling precautions is
    required..

    Parameter Symbol Maximum Units


    Drain-Source Voltage VDS 20 V
    Gate-Source Voltage VGS ±8 V
    TC=25°C (Note 3) 6
    Continuous Drain Current ID A
    TC=70°C(Note 3) 4.8
    Pulsed Drain Current (Note 1) IDM 20 A
    Power Dissipation TC=25°C PD 1.14 W
    Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

    Electrical Specifications

    Parameter Symbol Conditions Min. Typ. Max. Units


    STATIC PARAMETERS
    Drain-Source Breakdown Voltage BVDSS ID=250uA, VGS=0V 20 V
    VDS=20V,
    Zero Gate Voltage Drain Current IDSS TJ=25°C 1 uA
    VGS=0V
    Gate-Body leakage current IGSS VDS=0V, VGS=±8V 0.1 μA
    Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 0.5 1.5 V
    VGS=4.5V, ID=6A 22 28
    Static Drain-Source On-Resistance RDS(ON) mΩ
    VGS=2.5V, ID=5.2A 28 38
    Diode Forward Voltage VSD IS=1.5A, VGS=0V 1.2 V
    Maximum Body-Diode Continuous
    IS 6 A
    Current
    Maximum Body-Diode Pulsed
    ISM 20 A
    Current
    DYNAMIC PARAMETERS
    Input Capacitance Ciss VGS=0V, VDS=20V, 1030 pF
    Output Capacitance Coss f=1MHz 320 pF
    Reverse Transfer Capacitance Crss 150 pF
    SWITCHING PARAMETERS
    Total Gate Charge Qg VGS=5V, VDD=20V, 22 nC
    Gate Source Charge Qgs ID=6A (Note 2) 4 nC

     
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    PS8205A
            
    20V Dual Channel NMOSFET

    Gate Drain Charge Qgd 7 nC


    Turn-On Delay Time tD(on) 30 ns
    Turn-On Rise Time tr ID=1A, VDD=10V, 70 ns
    Turn-Off Delay Time tD(off) RG=10Ω(Note 2) 40 ns
    Turn-Off Fall Time tf 60 ns

    Notes
    1. Pulse width limited by max. junction temperature
    2. Pulse Width <= 300us, Duty Cycle <=2%
    3. Surface mounted on 1 in2 copper pad of FR4 board, t <= 5sec; 180oC/W when mounted on min. copper
    pad.

     
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    PS8205A
            
    20V Dual Channel NMOSFET

    Typical Performance Characteristics


      

     
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    PS8205A
            
    20V Dual Channel NMOSFET

    Typical Performance Characteristics (contd.)

     
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    PS8205A
            
    20V Dual Channel NMOSFET

    Typical Performance Characteristics (contd.)

     
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    PS8205A
            
    20V Dual Channel NMOSFET

    Package Dimensions
    TSSOP-8

     
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    PS8205A
            
    20V Dual Channel NMOSFET

    Ordering Information

    Device Operating Tj PKG Type Wrap Order Number


    PS8205A -55C°≤150C° TSSOP8 T&R PS8205A-T8-TL
    Note: Lead Free and RoHS compliant.

    Warranty and Use


    PROSPOWER MICROELECTRONICS MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE,
    EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR
    PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL
    PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE
    OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING OUT OF ANY
    SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL
    DAMAGES.

    ProsPower Microelectronics products are not designed, intended, or authorized for use as components in
    systems intended for surgical implant into the body, or other applications intended to support or sustain life, or
    for any other application in which the failure of the ProsPower Microelectronics product could create a situation
    where personal injury or death may occur.

    ProsPower Microelectronics reserves the right to make changes to or discontinue any product or service
    described herein without notice. Products with data sheets labeled "Advance Information" or "Preliminary" and
    other products described herein may not be in production or offered for sale.

    ProsPower Microelectronics advises customers to obtain the current version of the relevant product
    information before placing orders. Circuit diagrams illustrate typical semiconductor applications and may not
    be complete.

     
    ProsPower Microelectronics Co., Ltd
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