HGTP14N36G3VL,

HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
June 1995 Logic Level, Voltage Clamping IGBTs
Features Packages
JEDEC TO-220AB
• Logic Level Gate Drive
EMITTER
• Internal Voltage Clamp COLLECTOR
GATE
• ESD Gate Protection COLLECTOR
o (FLANGE)
• TJ = 175 C
• Ignition Energy Capable
JEDEC TO-262AA
Description
EMITTER
This N-Channel IGBT is a MOS gated, logic level device COLLECTOR
which is intended to be used as an ignition coil driver in auto- COLLECTOR GATE
(FLANGE)
motive ignition circuits. Unique features include an active

A
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
JEDEC TO-263AB
the logic level gate. Both a series resistor and a shunt
COLLECTOR
resister are provided in the gate circuit. M A
(FLANGE)

A
PACKAGING AVAILABILITY
GATE
PART NUMBER PACKAGE BRAND
EMITTER
HGTP14N36G3VL TO-220AB 14N36GVL
HGT1S14N36G3VL TO-262AA 14N36GVL
HGT1S14N36G3VLS TO-263AB 14N36GVL
Terminal Diagram
NOTE: When ordering, use the entire part number. Add the suffix 9A N-CHANNEL ENHANCEMENT MODE
to obtain the TO-263AB variant in the tape and reel, i.e., COLLECTOR
HGT1S14N36G3VLS9A.

The development type number for this device is TA49021.

R1
GATE

R2

EMITTER

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS UNITS
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 390 V
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25 18 A
at VGE = 5V, TC = +100oC. . . . . . . . . . . . . . . . . . . . . .IC100 14 A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V
Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . .ISCIS 17 A
at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . .ISCIS 12 A
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. . . . . . . . . . . . . . . EAS 332 mJ
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 W
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/oC
oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -40 to +175
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
NOTE: May be exceeded if IGEM is limited to 10mA.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. File Number 4008
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
This Material Copyrighted By Its Respective Manufacturer
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 Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Electrical Specifications TC = +25oC, Unless Otherwise Specified

LIMITS

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector-Emitter Breakdown Voltage BVCER IC = 10mA, TC = +175oC 320 355 400 V

VGE = 0V
RGE = 1kΩ TC = +25oC 330 360 390 V

TC = -40oC 320 350 385 V

Gate-Emitter Plateau Voltage VGEP IC = 7A, TC = +25oC - 2.7 - V

VCE = 12V

Gate Charge QG(ON) IC = 7A, TC = +25oC - 24 - nC

VCE = 12V

Collector-Emitter Clamp Breakdown BVCE(CL) IC = 7A TC = +175oC 350 380 410 V

Voltage RG = 1000Ω

Emitter-Collector Breakdown Voltage BVECS IC = 10mA TC = +25oC 24 28 - V

Collector-Emitter Leakage Current ICER VCE = 250V TC = +25oC - - 25 µA

RGE = 1kΩ
TC = +175oC - - 250 µA

Collector-Emitter Saturation Voltage VCE(SAT) IC = 7A TC = +25oC - 1.25 1.45 V

VGE = 4.5V
TC = +175oC - 1.15 1.6 V

IC = 14A TC = +25oC - 1.6 2.2 V

VGE = 5V
TC = +175oC - 1.7 2.9 V

Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA TC = +25oC 1.3 1.8 2.2 V

VCE = VGE

Gate Series Resistance R1 TC = +25oC - 75 - Ω

Gate-Emitter Resistance R2 TC = +25oC 10 20 30 kΩ

Gate-Emitter Leakage Current IGES VGE = ±10V ±330 ±500 ±1000 µA

Gate-Emitter Breakdown Voltage BVGES IGES = ±2mA ±12 ±14 - V

Current Turn-Off Time-Inductive Load tD(OFF)I + IC = 7A, RL = 28Ω - 7 - µs

tF(OFF)I RG = 25Ω, L = 550µH,
VCL = 300V, VGE = 5V,
TC = +175oC

Inductive Use Test ISCIS L = 2.3mH, TC = +175oC 12 - - A

VG = 5V,
TC = +25oC 17 - - A

oC/W
Thermal Resistance RθJC - - 1.5

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 HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
25 40
ICE, COLLECTOR-EMITTER CURRENT (A)

ICE, COLLECTOR-EMITTER CURRENT (A)

10V 5.0V

20
30
4.5V
15
20 4.0V

10
3.5V
+175oC +25oC
10
5
3.0V
-40oC
2.5V
0 0
1 2 3 4 5 0 2 4 6 8 10
VGE, GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

35
35 -40oC

ICE , COLLECTOR EMITTER CURRENT (A)

ICE , COLLECTOR EMITTER CURRENT (A)

VGE = 5.0V VGE = 4.5V

TC = +175oC
30 30
+25oC

25 25
VGE = 4.5V +175oC
20 20
VGE = 4.0V
15 15

10 10

5 5

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE(SAT) , SATURATION VOLTAGE (V) VCE(SAT) , SATURATION VOLTAGE (V)

FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF SATURATION VOLTAGE OF SATURATION VOLTAGE

1.35 2.25
ICE = 7A ICE = 14A
VCE(SAT) , SATURATION VOLTAGE (V)

VCE(SAT) , SATURATION VOLTAGE (V)

VGE = 4.0V VGE = 4.0V

1.25 2.00

VGE = 4.5V

1.15 1.75
VGE = 4.5V

VGE = 5.0V VGE = 5.0V

1.05 1.50
-25 +25 +75 +125 +175 -25 +25 +75 +125 +175
TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF

JUNCTION TEMPERATURE JUNCTION TEMPERATURE

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 HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves (Continued)

20

VGE(TH), NORMALIZED THRESHOLD VOLTAGE

VGE = 5V 1.2
ICE, COLLECTOR-EMITTER CURRENT (A)

18 ICE = 1ma

16 1.1

14
1.0
12
10
0.9
8

6 0.8

4
0.7
2

0 0.6
+25 +50 +75 +100 +125 +150 +175 -25 +25 +75 +125 +175
TC, CASE TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A

OF CASE TEMPERATURE FUNCTION OF JUNCTION TEMPERATURE

7.0
1E4 VCE = 300V, VGE = 5V
VECS = 20V
6.5 RGE = 25Ω, L = 550µH
RL = 37Ω, ICE = 7A
t(OFF)I, TURN OFF TIME (µs)
6.0
LEAKAGE CURRENT (µA)

1E3

5.5
1E2
5.0

1E1 4.5
VCES = 250V
4.0
1E0
3.5

1E-1 3.0
+25 +50 + 75 +100 +125 +150 +175
+20 +60 +100 +140 +180
TJ , JUNCTION TEMPERATURE (oC)
TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF FIGURE 10. TURN-OFF TIME AS A FUNCTION OF

JUNCTION TEMPERATURE JUNCTION TEMPERATURE

25 650
VGE = 5V VGE = 5V
IC , INDUCTIVE SWITCHING CURRENT (A)

+25oC 600

550
20 +25oC
500
EAS , ENERGY (mJ)

o
+175 C 450
15 400

350

300
10 +175oC
250

200
5 150
0 2 4 6 8 10 0 2 4 6 8 10
L, INDUCTANCE (mH) L , INDUCTANCE (mH)

FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
CURRENT AS A FUNCTION OF INDUCTANCE AS A FUNCTION OF INDUCTANCE

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 HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves (Continued)

REF IG = 1mA, RL = 1.7Ω, TC = +25oC
2000 12 6

VCE, COLLECTOR-EMITTER VOLTAGE (V)

FREQUENCY = 1MHz
1800

VGE, GATE-EMITTER VOLTAGE (V)

1600 10 5
CIES
C, CAPACITANCE (pF)

1400
8 4
1200 VCE = 12V

1000 6 3
800 VCE = 4V
4 2
600
VCE = 8V
400
2 1
COES
200
CRES
0 0 0
0 5 10 15 20 25 0 5 10 15 20 25 30
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR- FIGURE 14. GATE CHARGE WAVEFORMS
EMITTER VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE

355
100
350
BVCER, COLLECTOR-EMITTER
0.5 BKDN VOLTAGE (V)

345
0.2
t1
10-1 0.1 340
PD 25oC
0.05
t2
335
0.02 175oC
DUTY FACTOR, D = t1 / t2
0.01 PEAK TJ = (PD X ZθJC X RθJC) + TC 330

SINGLE PULSE
10-2 325
10-5 10-4 10-3 10-2 10-1 100 101 0 2000 4000 6000 8000 10000
t1 , RECTANGULAR PULSE DURATION (s) RGE, GATE-TO- EMITTER RESISTANCE (Ω)

FIGURE 15. NORMALIZED TRANSIENT THERMAL FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
IMPEDANCE, JUNCTION TO CASE GATE-EMITTER RESISTANCE

Test Circuits
RL
2.3mH
VDD
L = 550µH

C C
1/RG = 1/RGEN + 1/RGE
RGEN = 25Ω RG
DUT RGEN = 50Ω DUT
G +
5V G VCC
- 300V
10V
E
RGE = 50Ω

FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME
CURRENT TEST CIRCUIT TEST CIRCUIT

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 HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Handling Precautions for IGBT’s 1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
Insulated Gate Bipolar Transistors are susceptible to gate- springs or by the insertion into conductive material such
insulation damage by the electrostatic discharge of energy as †“ECCOSORBD LD26” or equivalent.
through the devices. When handling these devices, care 2. When devices are removed by hand from their carriers,
should be exercised to assure that the static charge built in the hand being used should be grounded by any suitable
the handler’s body capacitance is not discharged through means - for example, with a metallic wristband.
the device. With proper handling and application proce-
dures, however, IGBT’s are currently being extensively used 3. Tips of soldering irons should be grounded.
in production by numerous equipment manufacturers in mili- 4. Devices should never be inserted into or removed from
tary, industrial and consumer applications, with virtually no circuits with power on.
damage problems due to electrostatic discharge. IGBT’s can
5. Gate Voltage Rating -The gate-voltage rating of VGEM
be handled safely if the following basic precautions are may be exceeded if IGEM is limited to 10mA.
taken:
† Trademark Emerson and Cumming, Inc

.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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