STGP 5 H 60 DF
STGP 5 H 60 DF
STGP 5 H 60 DF
STGF5H60DF, STGP5H60DF
Datasheet
TAB
TAB
Features
2 3 • High-speed switching
3
1
1
D2 PAK
DPAK • Tight parameter distribution
• Safe paralleling
TAB
• Low thermal resistance
• Short-circuit rated
3
2
3 1
2
• Ultrafast soft recovery antiparallel diode
1
TO-220FP TO-220
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
E(3)
NG1E3C2T
stop structure. These devices are part of the H series of IGBTs, which represents an
optimum compromise between conduction and switching losses to maximize the
efficiency of high switching frequency converters. Furthermore, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
STGB5H60DF
STGD5H60DF
STGF5H60DF
STGP5H60DF
1 Electrical ratings
Value
Symbol Parameter Unit
D2PAK, TO-220 DPAK TO-220FP
Value
Symbol Parameter Unit
D2PAK, TO-220 DPAK TO-220FP
2 Electrical characteristics
Table 3. Static
Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 2 mA 600 V
voltage
VGE = 15 V, IC= 5 A 1.5 1.95
Collector-emitter saturation
VCE(sat) VGE = 15 V, IC = 5 A, TJ = 125 °C 1.6 V
voltage
VGE = 15 V, IC = 5 A, TJ = 175 °C 1.7
VGE(th) Gate threshold voltage VCE = VGE, IC = 250 μA 4.8 6.2 6.9 V
Table 4. Dynamic
Eon (1)
Turn-on switching energy 56
VCE = 400 V, IC = 5 A,
Eoff (2) Turn-off switching energy 78.5
RG = 47 Ω, VGE = 15 V
Ets Total switching energy 134.5
- - μJ
Eon(1) Turn-on switching energy 87
VCE = 400 V, IC = 5 A,
Eoff(2) Turn-off switching energy 134
RG = 47 Ω, VGE = 15 V, TJ = 175 °C
Ets Total switching energy 221
IF = 5 A 2.1
VF Forward on-voltage - - V
IF = 5 A, TJ = 175 °C 1.65
Figure 1. Power dissipation vs case temperature for Figure 2. Collector current vs case temperature for
D2PAK and TO-220 D2PAK, DPAK and TO-220
P TOT IGBT150515EI62PPDT IC IGBT150515EI62PCCT
(W) (A)
10
80
8
60
6
40
4
20
VGE ≥ 15 V, Tj ≤ 175 °C 2
VGE ≥ 15 V, Tj ≤ 175 °C
0 0
-50 0 50 100 150 TC (°C) -50 0 50 100 150 TC (°C)
Figure 3. Power dissipation vs case temperature for DPAK Figure 4. Collector current vs case temperature for DPAK
P TOT IGBT180515EI62DPDT IC IGBT150515EI62PCCT
(W) (A)
10
80
8
60
6
40
4
20
VGE ≥ 15 V, Tj ≤ 175 °C 2
VGE ≥ 15 V, Tj ≤ 175 °C
0 0
-50 0 50 100 150 TC (°C) -50 0 50 100 150 TC (°C)
Figure 5. Power dissipation vs case temperature for Figure 6. Collector current vs case temperature for
TO-220FP TO-220FP
P TOT IGBT180515EI62FPDT IC IGBT180515EI62FCCT
(W) (A)
25 6
5
20
4
15
3
10
2
5 1
VGE ≥ 15 V, Tj ≤ 175 °C VGE ≥ 15 V, Tj ≤ 175 °C
0 0
-50 0 50 100 150 TC (°C) -50 0 50 100 150 TC (°C)
Figure 7. Output characteristics (TJ = 25°C) Figure 8. Output characteristics (TJ = 175°C)
IC IGBT150515EI62POC25 IC IGBT150515EI62GOC175
(A) V GE =15 V 13 V (A) VGE = 15 V
11 V 11 V
16 16
13 V
12 12
9V
8 8
9V
4 4
7V
0 7V 0
0 1 2 3 4 V CE (V) 0 1 2 3 4 VCE (V)
1.8 2.4
Tj = 25 °C
1.6 2.0
IC=5A
Tj = -40 °C
1.4 1.6
1.2 1.2
I C = 2.5 A
1.0 0.8
-50 0 50 100 150 T J (°C) 0 4 8 12 16 IC (A)
Figure 11. Collector current vs switching frequency for Figure 12. Collector current vs switching frequency for
D2PAK, DPAK and TO-220 TO-220FP
IC IGBT150515EI62PCCS IC IGBT180515EI62FCCS
(A) (A) Rectangular current shape
(duty cycle=0.5, VCC =400 V,
T C = 80 °C RG =22 Ω, VGE =0/15 V, Tj =175°C)
24 10
20
8
T C = 100 °C
16 T C = 80 °C
6
12
T C = 100 °C
4
8
t p =1 µs
10 1 t p =1 µs
10 1
t p =10 µs
t p =10 µs
t p =100 µs
10 0
10 0
t p =1 ms t p =100 µs
t p =1 ms
10 -1
10 -1 10 0 10 1 10 2 V CE (V)
10 0 10 1 10 2 V CE (V)
IC IGBT150515EI62PTCH VF IGBT150515EI62PDVF
(A) (V)
T j = -40 °C
V CE = 6 V 3.5
16 T j = 25 °C
3.0
12 2.5 T j = 175 °C
2.0
T J = 175 °C
8
1.5
1.0
4
T J = 25 °C
0.5
0 0.0
5 6 7 8 9 10 V GE (V) 0 4 8 12 16 I F (A)
Figure 17. Normalized VGE(th) vs junction temperature Figure 18. Normalized V(BR)CES vs junction temperature
1.0
I C = 2 mA
0.9
1.0
0.8
0.7
0.6 0.9
-50 0 50 100 150 T J (°C) -50 0 50 100 150 T J (°C)
Figure 19. Capacitance variation Figure 20. Gate charge vs. gate-emitter voltage
C IGBT150515EI62PCVR VGE GADG280220201428GCGE
(pF) (V)
VCC = 480 V, IC = 5 A, IG = 1 mA
15
C ies
10 3
12
10 2 9
6
C oes
10 1
f = 1 MHz C res 3
10 0 0
10 -1 10 0 10 1 10 2 V CE (V) 0 8 16 24 32 40 Qg (nC)
Figure 21. Switching energy vs collector current Figure 22. Switching energy vs gate resistance
E IGBT150515EI62PSLC E IGBT150515EI62PSLG
(mJ) (mJ)
V CC = 400 V, R G = 47 Ω V CC = 400 V, I C = 5 A
0.25 0.30 V GE = 15 V, T j = 175 °C
V GE = 15 V, T j = 175 °C
0.25
0.20
0.20
0.15
E off E off
0.15
0.10
0.10
E on
0.05 E on
0.05
0.00 0.00
0 2 4 6 8 10 I C (A) 0 50 100 150 200 250 300 R G (Ω)
Figure 23. Switching energy vs temperature Figure 24. Switching energy vs collector-emitter voltage
E IGBT150515EI62PSLT E IGBT150515EI62PSLV
(mJ) (mJ)
V CC = 400 V, I C = 5 A I C = 5 A, R G = 47 Ω
0.16 0.16
R G = 47 Ω, V GE = 15 V V GE = 15 V, T j = 175 °C
0.12 0.12
E off E off
0.08 0.08
E on
0.04 0.04
E on
0.00 0.00
0 50 100 150 T J (°C) 150 200 250 300 350 400 450 V CE (V)
Figure 25. Short circuit time and current vs VGE Figure 26. Switching times vs collector current
t SC IGBT150515EI62PSCV I SC t IGBT150515EI62PSTC
(µs) (A) (ns)
VCC ≤ 300 V
16 90 tf
t SC TJ ≤ 150 °C I SC
t d(off)
10 2
12 70
t d(on)
8 50
10 1
tr
4 30 V CC = 400 V, V GE = 15 V
R G = 47 Ω, T j = 175 °C
0 10 10 0
9 10 11 12 13 14 15 V GE (V) 0 2 4 6 8 I C (A)
101
4
tr
VCC = 400 V, VGE = 15V
I C = 5 A, Tj = 175 °C 2
100
0 50 100 150 200 250 300 R G (Ω) 0
0 200 400 600 800 di/dt (A/µs)
120 0.20
100
0.18
80
60 0.16
40
0 200 400 600 800 di/dt (A/µs) 0.14
0 200 400 600 800 di/dt (A/µs)
E rr IGBT150515EI62PRRE
(mJ)
V CC = 400 V, V GE = 15 V
44 I F = 5 A, T J = 175 °C
40
36
32
28
0 200 400 600 800 di/dt (A/µs)
Figure 32. Thermal impedance for D2PAK, DPAK and TO-220 IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1 0.05
-1
10
0.02
Zth=k Rthj-c
0.01 δ=tp/t
Single pulse tp
t
-2
10 -5 -4 -2 -1
tp (s)
-3
10 10 10 10 10
Figure 33. Thermal impedance for D2PAK, DPAK and TO-220 diode
3 Test circuits
Figure 34. Test circuit for inductive load switching Figure 35. Gate charge test circuit
A A
C
L=100 µH k
G k
E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E
k
-
k
AM01504v1 AM01505v1
90%
VG 10%
90%
VCE tr(Voff)
10%
tcross 25
90%
IC td(off)
10%
td(on) tf
tr(Ion)
ton toff
AM01506v1
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
0079457_26
mm
Dim.
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.30 8.50 8.70
E2 6.85 7.05 7.25
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°
Footprint_26
40mm min.
access hole
at slot location
B
D C
N
A
AM06038v1
Tape Reel
mm mm
Dim. Dim.
Min. Max. Min. Max.
0068772_type-A2_rev27
mm
Dim.
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
mm
Dim.
Min. Typ. Max.
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 5.10 5.20 5.30
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
L1 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°
0068772_C2_25
mm
Dim.
Min. Typ. Max.
10 pitches cumulative
tolerance on tape +/- 0.2 mm
Top cover P0 D P2
T tape
E
F
K0 W
B1 B0
Bending radius
User direction of feed
AM08852v1
40mm min.
access hole
at slot location
B
D C
N
A
AM06038v1
Tape Reel
mm mm
Dim. Dim.
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
7012510_Rev_13_B
mm
Dim.
Min. Typ. Max.
A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
E 0.45 0.70
F 0.75 1.00
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.20
G1 2.40 2.70
H 10.00 10.40
L2 16.00
L3 28.60 30.60
L4 9.80 10.60
L5 2.90 3.60
L6 15.90 16.40
L7 9.00 9.30
Dia 3.00 3.20
0015988_typeA_Rev_22
mm
Dim.
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
5 Ordering information
Revision history
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6