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 FDS8880 N-Channel PowerTrench® MOSFET
April 2007

FDS8880 tm

N-Channel PowerTrench® MOSFET

30V, 11.6A, 10mΩ
Features General Description
„ rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
„ rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
„ High performance trench technology for extremely low rDS(on) and fast switching speed.
rDS(on)

„ Low gate charge

Applications
„ DC/DC converters
„ High power and current handling capability

„ RoHS Compliant

Branding Dash
5 4

5 6 3
1 7 2
2
3
4 8 1
SO-8

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) 11.6 A
ID o o
Continuous (TA = 25 C, VGS = 4.5V, RθJA = 50 C/W) 10.7 A
Pulsed 83 A
EAS Single Pulse Avalanche Energy (Note 1) 82 mJ
Power dissipation 2.5 W
PD
Derate above 25oC 20 mW/oC
o
TJ, TSTG Operating and Storage Temperature -55 to 150 C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case (Note 2) 25 oC/W

RθJA Thermal Resistance, Junction to Ambient (Note 2a) 50 oC/W

o
RθJA Thermal Resistance, Junction to Ambient (Note 2b) 125 C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDS8880 FDS8880 SO-8 330mm 12mm 2500 units

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V
VDS = 24V - - 1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TJ = 150oC - - 250
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V
ID = 11.6A, VGS = 10V - 7.9 10.0
ID = 10.7A, VGS = 4.5V - 9.6 12.0
rDS(on) Drain to Source On Resistance mΩ
ID = 11.6A, VGS = 10V,
- 12.5 16.3
TJ = 150oC

Dynamic Characteristics
CISS Input Capacitance - 1235 - pF
VDS = 15V, VGS = 0V,
COSS Output Capacitance - 260 - pF
f = 1MHz
CRSS Reverse Transfer Capacitance - 150 - pF
RG Gate Resistance VGS = 0.5V, f = 1MHz 0.6 2.5 4.3 Ω
Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 23 30 nC
Qg(5) Total Gate Charge at 5V VGS = 0V to 5V VDD = 15V - 12 16 nC
ID = 11.6A
Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 1.3 1.6 nC
Ig = 1.0mA
Qgs Gate to Source Gate Charge - 3.3 - nC
Qgs2 Gate Charge Threshold to Plateau - 2.0 - nC
Qgd Gate to Drain “Miller” Charge - 4.2 - nC

©2007 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
Switching Characteristics (VGS = 10V)
tON Turn-On Time - - 51 ns
td(ON) Turn-On Delay Time - 7 - ns
tr Rise Time VDD = 15V, ID = 11.6A - 27 - ns
td(OFF) Turn-Off Delay Time VGS = 10V, RGS = 11Ω - 38 - ns
tf Fall Time - 15 - ns
tOFF Turn-Off Time - - 80 ns

Drain-Source Diode Characteristics

ISD = 11.6A - - 1.25 V
VSD Source to Drain Diode Voltage
ISD = 2.1A - - 1.0 V
trr Reverse Recovery Time ISD = 11.6A, dISD/dt = 100A/µs - - 30 ns
QRR Reverse Recovered Charge ISD = 11.6A, dISD/dt = 100A/µs - - 20 nC

Notes:
1: Starting TJ = 25°C, L = 1mH, IAS = 12.8A, VDD = 30V, VGS = 10V.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 50°C/W when mounted on a 1in2 pad of 2 oz copper.
b) 125°C/W when mounted on a minimum pad.

©2007 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

1.2 12

1.0 10
POWER DISSIPATION MULTIPLIER

VGS = 10V

ID, DRAIN CURRENT (A)

0.8 8
VGS = 4.5V

0.6 6

0.4 4

0.2 2
RθJA=50oC/W

0 0
0 25 50 75 100 125 150 25 50 75 100 125 150
TA , AMBIENT TEMPERATURE (oC) TA , AMBIENT TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs Figure 2. Maximum Continuous Drain Current vs

Ambient Temperature Ambient Temperature

2
1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
0.1
IMPEDANCE, ZθJA

0.1 0.05
0.02
0.01 PDM

0.01
t1
t2
SINGLE PULSE
o NOTES:
RθJA = 125 C/W DUTY FACTOR: D = t1/t2
0.001 PEAK TJ = PDM x ZθJA x RθJA + TA
0.0005
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

2000
1000 VGS = 10V
SINGLE PULSE
P(PK), PEAK TRANSIENT POWER (W)

o
RθJA = 125 C/W
o
TA = 25 C
100

10

1
0.5
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t, PULSE WIDTH (s)

Figure 4. Single Pulse Maximum Power Dissipation

©2007 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

100 50
If R = 0 PULSE DURATION = 80µs
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) DUTY CYCLE = 0.5% MAX
If R ≠ 0 VDD = 15V
IAS, AVALANCHE CURRENT (A)

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 40

ID , DRAIN CURRENT (A)

TJ = 25oC

30

10 STARTING TJ = 25oC
20
TJ = 150oC TJ = -55oC

STARTING TJ = 150oC 10

1 0
0.01 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5
tAV, TIME IN AVALANCHE (ms) VGS , GATE TO SOURCE VOLTAGE (V)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Transfer Characteristics
Figure 5. Unclamped Inductive Switching
Capability

50 50
PULSE DURATION = 80µs
VGS = 10V VGS = 4V
DUTY CYCLE = 0.5% MAX
40 40
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (mW)
ID, DRAIN CURRENT (A)

VGS = 5V
ID = 11.6A
VGS = 3V
30 30

20 20

10 TA = 25oC 10
PULSE DURATION = 80µs ID = 1A
DUTY CYCLE = 0.5% MAX
0 0
0 0.2 0.4 0.6 0.8 2 4 6 8 10
VDS , DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Saturation Characteristics Figure 8. Drain to Source On Resistance vs Gate

Voltage and Drain Current

1.6 1.2
PULSE DURATION = 80µs VGS = VDS, ID = 250µA
NORMALIZED DRAIN TO SOURCE

DUTY CYCLE = 0.5% MAX

1.4
THRESHOLD VOLTAGE
NORMALIZED GATE
ON RESISTANCE

1.0
1.2

1.0
0.8

0.8

VGS = 10V, ID = 11.6A

0.6 0.6
-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC)

Figure 9. Normalized Drain to Source On Figure 10. Normalized Gate Threshold Voltage vs
Resistance vs Junction Temperature Junction Temperature

©2007 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

1.10 2000
CISS = CGS + CGD
ID = 250µA
NORMALIZED DRAIN TO SOURCE

1000 COSS ≅ CDS + CGD

BREAKDOWN VOLTAGE

1.05

C, CAPACITANCE (pF)
1.00 CRSS = CGD

0.95

VGS = 0V, f = 1MHz

0.90
100
-80 -40 0 40 80 120 160 0.1 1 10 30
TJ , JUNCTION TEMPERATURE (oC) VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 11. Normalized Drain to Source Figure 12. Capacitance vs Drain to Source
Breakdown Voltage vs Junction Temperature Voltage

10
100
VDD = 15V
100us
VGS , GATE TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

8 10
1ms
6
1 10ms
THIS AREA IS
LIMITED BY rDS(on) 100ms
4
SINGLE PULSE 1s
0.1 TJ = MAX RATED
WAVEFORMS IN o
RθJA = 125 C/W 10s
2 DESCENDING ORDER:
DC
ID = 11.6A TA = 25oC
ID = 1A 0.01
0 0.01 0.1 1 10 100
0 5 10 15 20 25
VDS, DRAIN to SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)

Figure 13. Gate Charge Waveforms for Constant Figure 14. Forward Bias Safe Operating Area
Gate Currents

©2007 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
Test Circuits and Waveforms

VDS BVDSS

tP
VDS
L
IAS
VARY tP TO OBTAIN VDD
+
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS 0
0.01Ω
tAV

Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms

VDS
VDD Qg(TOT)
VDS VGS
L
VGS = 10V
Qg(5)
VGS
+ Qgs2
VGS = 5V
VDD
-

DUT VGS = 1V
Ig(REF) 0
Qg(TH)
Qgs Qgd

Ig(REF)
0

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms

VDS tON tOFF

td(ON) td(OFF)

RL tr tf
VDS
90% 90%

+
VGS
VDD
10% 10%
- 0

DUT 90%
RGS
VGS 50% 50%
PULSE WIDTH
VGS 10%
0

Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms

©2007 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and the thermal impedance curve.
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM, in an Thermal resistances corresponding to other copper areas
application. Therefore the application’s ambient can be obtained from Figure 21 or by calculation using
temperature, TA (oC), and thermal resistance RθJA (oC/W) Equation 2. The area, in square inches is the top copper
must be reviewed to ensure that TJM is never exceeded. area including the gate and source pads.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part. 26
R θJA = 64 + ------------------------------- (EQ. 2)
( T JM – T A ) 0.23 + Area
P = ------------------------------- (EQ. 1)
DM RθJA The transient thermal impedance (ZθJA) is also effected by
varied top copper board area. Figure 22 shows the effect of
In using surface mount devices such as the SO8 package, copper pad area on single pulse transient thermal imped-
the environment in which it is applied will have a significant ance. Each trace represents a copper pad area in square
influence on the part’s current and maximum power inches corresponding to the descending list in the graph.
dissipation ratings. Precise determination of PDM is complex Spice and SABER thermal models are provided for each of
and influenced by many factors: the listed pad areas.

1. Mounting pad area onto which the device is attached and Copper pad area has no perceivable effect on transient
whether there is copper on one side or both sides of the thermal impedance for pulse widths less than 100ms. For
board. pulse widths less than 100ms the transient thermal
impedance is determined by the die and package.
2. The number of copper layers and the thickness of the Therefore, CTHERM1 through CTHERM5 and RTHERM1
board. through RTHERM5 remain constant for each of the thermal
models. A listing of the model component values is available
3. The use of external heat sinks.
in Table 1.
4. The use of thermal vias.
200
5. Air flow and board orientation.
RθJA = 64 + 26/(0.23+Area)
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
RθJA (oC/W)

150
the board and the environment they are in.
Fairchild provides thermal information to assist the design-
er’s preliminary application evaluation. Figure 21 defines the
RθJA for the device as a function of the top copper (compo- 100
nent side) area. This is for a horizontally positioned FR-4
board with 1oz copper after 1000 seconds of steady state
power with no air flow. This graph provides the necessary in- 50
formation for calculation of the steady state junction temper-
0.001 0.01 0.1 1 10
ature or power dissipation. Pulse applications can be AREA, TOP COPPER AREA (in2)
evaluated using the Fairchild device Spice thermal model or Figure 21. Thermal Resistance vs Mounting
manually utilizing the normalized maximum transient Pad Area
150
COPPER BOARD AREA - DESCENDING ORDER
0.04 in2
120 0.28 in2
IMPEDANCE (oC/W)

0.52 in2
ZθJA, THERMAL

0.76 in2
90 1.00 in2

60

30

0
10-1 100 101 102 103
t, RECTANGULAR PULSE DURATION (s)
Figure 22. Thermal Impedance vs Mounting Pad Area

©2007 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
PSPICE Electrical Model
.SUBCKT FDS8880 2 1 3 ; rev August 2004
Ca 12 8 9.3e-10
Cb 15 14 9.3e-10
Cin 6 8 1.15e-9

Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD LDRAIN
Dplcap 10 5 DplcapMOD DPLCAP 5 DRAIN
2
10
Ebreak 11 7 17 18 33.5 RLDRAIN
RSLC1
Eds 14 8 5 8 1 51 DBREAK
Egs 13 8 6 8 1 RSLC2
+

Esg 6 10 6 8 1 5
51 ESLC 11
Evthres 6 21 19 8 1 -
Evtemp 20 6 18 22 1 50 +
-
RDRAIN 17 DBODY
6 EBREAK 18
ESG
It 8 17 1 8
-
+ EVTHRES 16
+ 19 - 21
Lgate 1 9 3.6e-9 LGATE EVTEMP MWEAK
8
Ldrain 2 5 1.0e-9 GATE RGATE + 18 - 6
1 MMED
Lsource 3 7 1.2e-10 9 20
22
RLGATE MSTRO
RLgate 1 9 36 LSOURCE
CIN SOURCE
RLdrain 2 5 10 8 7 3
RLsource 3 7 1.2 RSOURCE
RLSOURCE
Mmed 16 6 8 8 MmedMOD S1A S2A
Mstro 16 6 8 8 MstroMOD 12 RBREAK
13 14 15
17 18
Mweak 16 21 8 8 MweakMOD 8 13
S1B S2B RVTEMP
Rbreak 17 18 RbreakMOD 1 13 CB 19
CA
Rdrain 50 16 RdrainMOD 2.9e-3 + + 14 IT -
Rgate 9 20 2.5 6 5 VBAT
RSLC1 5 51 RSLCMOD 1e-6 EGS 8 EDS 8 +
RSLC2 5 50 1e3 - - 8
Rsource 8 7 RsourceMOD 5.4e-3 22
Rvthres 22 8 RvthresMOD 1 RVTHRES
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD

Vbat 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}

.MODEL DbodyMOD D (IS=2.6E-12 IKF=10 N=1.01 RS=5.6e-3 TRS1=8e-4 TRS2=2e-7

+ CJO=5e-10 M=0.55 TT=1e-11 XTI=2)
.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=4.27e-10 IS=1e-30 N=10 M=0.38)

.MODEL MmedMOD NMOS (VTO=1.8 KP=5 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.5)
.MODEL MstroMOD NMOS (VTO=2.21 KP=150 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=1.53 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=25 RS=0.1)

.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7)

.MODEL RdrainMOD RES (TC1=5.5e-3 TC2=1.2e-5)
.MODEL RSLCMOD RES (TC1=1e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=3e-6)
.MODEL RvthresMOD RES (TC1=-1.5e-3 TC2=-6e-6)
.MODEL RvtempMOD RES (TC1=-1.8e-3 TC2=2e-7)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-1.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.0 VOFF=-1.5)

.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.

©2007 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
SABER Electrical Model
REV August 2004
template FDS8880 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=2.6e-12,ikf=10,nl=1.01,rs=5.6e-3,trs1=8e-4,trs2=2e-7,cjo=5e-10,m=0.55,tt=1e-11,xti=2)
dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=4.27e-10,isl=10e-30,nl=10,m=0.38)
m..model mmedmod = (type=_n,vto=1.8,kp=5,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=2.21,kp=150,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.53,kp=0.05,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3.5) LDRAIN
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-4) DPLCAP 5 DRAIN
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.5,voff=-1.0) 10 2
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-1.0,voff=-1.5) RLDRAIN
c.ca n12 n8 = 9.3e-10 RSLC1
51
c.cb n15 n14 = 9.3e-10 RSLC2
c.cin n6 n8 = 1.15e-9 ISCL

dp.dbody n7 n5 = model=dbodymod 50 DBREAK

-
dp.dbreak n5 n11 = model=dbreakmod 6 RDRAIN
dp.dplcap n10 n5 = model=dplcapmod ESG 8 11
EVTHRES DBODY
+ 16
+ 19 - 21
spe.ebreak n11 n7 n17 n18 = 33.5 LGATE EVTEMP MWEAK
8
spe.eds n14 n8 n5 n8 = 1 GATE RGATE + 18 - 6 EBREAK
spe.egs n13 n8 n6 n8 = 1 1
9 22 MMED +
20
spe.esg n6 n10 n6 n8 = 1 RLGATE MSTRO 17
spe.evthres n6 n21 n19 n8 = 1 18 LSOURCE
spe.evtemp n20 n6 n18 n22 = 1 CIN - SOURCE
8 7 3
RSOURCE
i.it n8 n17 = 1 RLSOURCE
S1A S2A
l.lgate n1 n9 = 3.6e-9 12 13 14 15
RBREAK
l.ldrain n2 n5 = 1.0e-9 17 18
8 13
l.lsource n3 n7 = 1.2e-10 S1B S2B RVTEMP
13 CB 19
res.rlgate n1 n9 = 36 CA
14 IT -
+ +
res.rldrain n2 n5 = 10 VBAT
6 5
res.rlsource n3 n7 = 1.2 EGS 8 EDS 8 +
- - 8
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u 22
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u RVTHRES
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u

res.rbreak n17 n18 = 1, tc1=8.3e-4,tc2=-8e-7

res.rdrain n50 n16 = 2.9e-3, tc1=5.5e-3,tc2=1.2e-5
res.rgate n9 n20 = 2.5
res.rslc1 n5 n51 = 1e-6, tc1=1e-4,tc2=1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 5.4e-3, tc1=1e-3,tc2=3e-6
res.rvthres n22 n8 = 1, tc1=-1.5e-3,tc2=-6e-6
res.rvtemp n18 n19 = 1, tc1=-1.8e-3,tc2=2e-7
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc=1

equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/170))** 5))

}
}

©2007 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
SPICE Thermal Model th JUNCTION
REV August 2004
FDS8880
Copper Area =1.0 in2
CTHERM1 TH 8 2.0e-3
CTHERM2 8 7 5.0e-3 RTHERM1 CTHERM1
CTHERM3 7 6 1.0e-2
CTHERM4 6 5 4.0e-2
CTHERM5 5 4 9.0e-2 8
CTHERM6 4 3 2e-1
CTHERM7 3 2 1
CTHERM8 2 TL 3 RTHERM2 CTHERM2

RTHERM1 TH 8 1e-1
7
RTHERM2 8 7 5e-1
RTHERM3 7 6 1
RTHERM4 6 5 5 RTHERM3 CTHERM3
RTHERM5 5 4 8
RTHERM6 4 3 12
RTHERM7 3 2 18 6
RTHERM8 2 TL 25

SABER Thermal Model RTHERM4 CTHERM4

2
Copper Area = 1.0 in 5
template thermal_model th tl
thermal_c th, tl
{
RTHERM5 CTHERM5
ctherm.ctherm1 th 8 =2.0e-3
ctherm.ctherm2 8 7 =5.0e-3
ctherm.ctherm3 7 6 =1.0e-2 4
ctherm.ctherm4 6 5 =4.0e-2
ctherm.ctherm5 5 4 =9.0e-2
ctherm.ctherm6 4 3 =2e-1 RTHERM6 CTHERM6
ctherm.ctherm7 3 2 1
ctherm.ctherm8 2 tl 3
3
rtherm.rtherm1 th 8 =1e-1
rtherm.rtherm2 8 7 =5e-1
RTHERM7 CTHERM7
rtherm.rtherm3 7 6 =1
rtherm.rtherm4 6 5 =5
rtherm.rtherm5 5 4 =8 2
rtherm.rtherm6 4 3 =12
rtherm.rtherm7 3 2 =18
rtherm.rtherm8 2 tl =25 RTHERM8 CTHERM8
}

tl CASE

TABLE 1. THERMAL MODELS

COMPONANT 0.04 in2 0.28 in2 0.52 in2 0.76 in2 1.0 in2

CTHERM6 1.2e-1 1.5e-1 2.0e-1 2.0e-1 2.0e-1

CTHERM7 0.5 1.0 1.0 1.0 1.0

CTHERM8 1.3 2.8 3.0 3.0 3.0

RTHERM6 26 20 15 13 12

RTHERM7 39 24 21 19 18

RTHERM8 55 38.7 31.3 29.7 25

©2007 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com

FDS8880 Rev. B
 FDS8880 N-Channel PowerTrench® MOSFET
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Rev. I26
©2007 Fairchild Semiconductor Corporation 12 www.fairchildsemi.com
FDS8880 Rev. B
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