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 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
FDC658AP
Single P-Channel Logic Level PowerTrench® MOSFET
-30V, -4A, 50m:

General Description Features

This P-Channel Logic Level MOSFET is produced using „ Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A
ON Semiconductor advanced PowerTrench process. It
has been optimized for battery power management „ Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A
applications.
„ Low Gate Charge
Applications
„ Battery management „ High performance trench technology for extremely low
rDS(on)
„ Load switch
„ RoHS Compliant
„ Battery protection

„ DC/DC conversion

S
D
1 6
D
2 5
G
D
D 3 4
PIN 1
SuperSOTTM-6

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage r25 V
Drain Current - Continuous (Note 1a) -4
ID A
- Pulsed -20
Maximum Power dissipation (Note 1a) 1.6
PD W
(Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RTJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity
.58A FDC658AP 7inch 8mm 3000 units

©2011 Semiconductor Components Industries, LLC. Publication Order Number:

October-2017,Rev. 2 FDC658AP/D
 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage ID = -250PA, VGS = 0V -30 V
'BVDSS Breakdown Voltage Temperature ID = -250PA,
-22 mV/°C
'TJ Coefficient Referenced to 25°C
IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = -24V -1 PA
IGSS Gate-Body Leakage VGS = r25V, VDS = 0V r100 nA

On Characteristics (Note 2)
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = -250PA -1 -1.8 -3 V
'VGS(TH) Gate Threshold Voltage ID = -250PA,
4 mV/°C
'TJ Temperature Coefficient Referenced to 25°C
ID = -4A, VGS = -10V 44 50
ID = -3.4A, VGS = -4.5V 67 75
rDS(on) Static Drain-Source On-Resistance m:
ID = -4A, VGS = -10V,
60 70
TJ = 125°C
ID(ON) On-State Drain Current VGS = -10V, VDS = -5V -20 A
gFS Forward Transconductance ID = -4A, VDS = -5V 8.4 S

Dynamic Characteristics
Ciss Input Capacitance 470 680 pF
VDS = -15V, VGS = 0V,
Coss Output Capacitance 126 180 pF
f = 1MHz
Crss Reverse Transfer Capacitance 61 90 pF

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time 7 14 ns
tr Turn-On Rise Time VDD = -15V, ID = -1A 12 22 ns
td(off) Turn-Off Delay Time VGS = -10V, RGEN = 6: 16 29 ns
tf Turn-Off Fall Time 6 12 ns
Qg Total Gate Charge 6 8.1 nC
VDS = -15V, ID = -4A,
Qgs Gate-Source Charge 2.1 nC
VGS = -5V
Qgd Gate-Drain Charge 2 nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -1.3 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.3 A (Note 2) -0.77 -1.2 V
Notes:
1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.

a) 78oC/W when mounted on a b) 156oC/W whe mounted on a

1 in2 pad of 2 oz copper minimum pad of 2 oz copper

Scale 1: 1 on letter size paper

2: Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%

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2
 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
20 2

DRAIN TO SOURCE ON-RESISTANCE

VGS = -10V -5.0V
-4.5V
-6.0V 1.8
-I D , DRAIN CURRENT (A)

15 VGS = -4.5V
-4.0V
1.6

NORMALIZED
-5.0V
10 1.4
-3.5V
-6.0V
1.2 -7.0V
-8.0V
5
-3.0V -10V
1

0 0.8
0 1 2 3 4 5 0 4 8 12 16 20
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain

Current and Gate Voltage

1.6 0.22
ID = -4.0A
DRAIN TO SOURCE ON-RESISTANCE

ID = -2.0A
VGS = -10V
1.4 0.18
r DS(on), DRAIN TO SOURCE
ON RESISTANCE (OHM)
NORMALIZED

1.2 0.14

TJ = 125oC
1 0.1
o
TJ = 25 C
0.8 0.06

0.6 0.02
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On-Resistance vs Junction Figure 4. On-Resistance vs Gate to Source

Temperature Voltage

15 10
o
25 C VGS = 0V
-I S , REVERSE DRAIN CURRENT (A)

o
VDS = -5V TJ = -55 C
12 1
-I D , D R A IN C U R R E N T (A )

o
125 C
o
TJ = 125 C
9 0.1

o
25 C
6 0.01
o
-55 C
3 0.001

0 0.0001
1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage
vs Source Current

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3
 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics

10 600
f = 1 MHz
-V G S , G A T E -S O U R C E V O L T A G E (V )
ID = -4A VDS = -5V
-10V Ciss VGS = 0 V
8
-15V 450

C A PA C ITA N C E (pF)
6
300

4 Coss

150
2

Crss
0 0
0 2 4 6 8 10 0 6 12 18 24 30
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage

100 10

SINGLE PULSE

P(pk), PEAK TRA NSIENT PO W ER (W )

RJA = 156°C/W
rDS(on) LIMIT 8 TA = 25°C
-I D , DR A IN C UR REN T (A )

10 100us

1ms
6

1 10ms

100ms 4
VGS = -10V
SINGLE PULSE
0.1 1s
RJA = 156oC/W 2
o
TA = 25 C
DC

0.01 0
0.1 1 10 100 0.01 0.1 1 10 100
t, PULSE WIDTH (s)
-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power
Dissipation
TRANSIENT THERMAL RESISTANCE

1
r(t), NORMALIZED EFFECTIVE

D = 0.5
RJA(t) = r(t) x RJA
o
0.2 RJA = 156 C/W
0.1 0.1

0.05 P(pk)
0.02 t1
0.01 t2
0.01 TJ - TA = P x RJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, RECTANGULAR PULSE DURATION

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

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4
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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