MDU5593S - Dual N-Channel Trench MOSFET 30V

MDU5593S
Dual Asymmetric N-channel Trench MOSFET 30V

General Description Features

The MDU5593S uses advanced MagnaChip’s MOSFET FET1 FET2
Technology, which provides high performance in on-state  VDS = 30V VDS = 30V
resistance, fast switching performance and excellent  ID = 34A ID = 40A @VGS = 10V
quality. MDU5593S is suitable for DC/DC converter and  RDS(ON)
general purpose applications. < 8.0mΩ < 3.3mΩ @VGS = 10V
< 11.0mΩ < 5.0mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested

S2
5 S2
6 S2
7 G2
8
S1/D2

1 D1 3
2 D1 2
3 D1 1
4
G1

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol FET1 FET2 Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 ±20 V
TC=25oC (Silicon Limited) 52 95
Continuous Drain Current (1) TC=25oC (Package Limited) ID 34 40 A
o
TA=25 C 13 21
Pulsed Drain Current IDM 40 100 A
o
TC=25 C 35.7 44.6
Power Dissipation o
PD W
TA=25 C 2.2 2.5
Single Pulse Avalanche Energy (2) EAS 60 60 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol FET1 FET2 Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 57 50 o
C/W
Thermal Resistance, Junction-to-Case RθJC 3.5 2.8

Jun. 2013 Ver1.2 1 MagnaChip Semiconductor Ltd.

 MDU5593S - Dual N-Channel Trench MOSFET 30V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDU5593SVRH -55~150oC Dual PDFN56 Tape & Reel Halogen Free

FET1 Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.8 3.0
Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - - 1
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 13A - 5.1 8.0
Drain-Source ON Resistance RDS(ON) mΩ
VGS = 4.5V, ID = 11A - 7.2 11.0
Forward Transconductance gfs VDS = 5V, ID = 13A - 35 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) - 18.0 -
Total Gate Charge Qg(4.5V) VDS = 15.0V, ID = 10A, - 9.5 -
nC
Gate-Source Charge Qgs VGS = 10V - 3.2 -
Gate-Drain Charge Qgd - 3.2 -
Input Capacitance Ciss - 1,142 -
VDS = 15.0V, VGS = 0V,
Output Capacitance Coss - 446 - pF
f = 1.0MHz
Reverse Transfer Capacitance Crss - 83 -
Turn-On Delay Time td(on) - 9.9 -
Rise Time tr - 12.1 -
VDD=15V, ID=10A, Rg=3Ω ns
Turn-Off Delay Time td(off) - 28.5 -
Fall Time tf - 6.9 -
Gate Resistance Rg f=1 MHz - 1.0 - Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.7 1.0 V
Body Diode Reverse Recovery Time trr - 31.8 - ns
IF = 10A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 29.4 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 15.5A, VDD = 27V, VGS = 10V. And 100% UIL Test at L = 0.1mH, IAS = 18.0A.

Jun. 2013 Ver1.2 2 MagnaChip Semiconductor Ltd.

 MDU5593S - Dual N-Channel Trench MOSFET 30V
50 9
VGS = 10V
4.5V

Drain-Source On-Resistance [mΩ]

8.0V
4.0V
40 8
5.0V VGS = 4.5V
ID, Drain Current [A]

30 7

3.5V
20 6

VGS = 10V

10 5
3.0V

0 4
0.0 0.2 0.4 0.6 0.8 1.0 10 20 30 40 50

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 20

※ Notes :
※ Notes :
1. VGS = 10 V
1.6 ID = 13A
2. ID = 13 A
Drain-Source On-Resistance

Drain-Source On-Resistance

16
RDS(ON), (Normalized)

1.4
RDS(ON) [mΩ ],

1.2
12

1.0 TJ = 25
℃

8
0.8

0.6
-50 -25 0 25 50 75 100 125 150 4
3 4 5 6 7 8 9 10
o
TJ, Junction Temperature [ C] VGS, Gate to Source Volatge [V]
Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with
Temperature Gate to Source Voltage
Area
25
※ Notes :
※ Notes : VGS = 0V
VDS = 5V
IDR, Reverse Drain Current [A]

20 1
10
ID, Drain Current [A]

15
TJ=25 ℃

TJ=25 ℃

10 10
0

-1
0 10
1 2 3 4 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jun. 2013 Ver1.2 3 MagnaChip Semiconductor Ltd.

 MDU5593S - Dual N-Channel Trench MOSFET 30V
10 1600
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 10A
Ciss
Coss = Cds + Cgd
Crss = Cgd
8
VGS, Gate-Source Voltage [V]

1200

Capacitance [F]
6

800
Coss ※ Notes ;
4 1. VGS = 0 V
2. f = 1 MHz

400
2
Crss

0 0
0 5 10 15 20 0 10 20 30
QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10
60

50
10 ms
ID, Drain Current [A]

1
ID, Drain Current [A]

10
Operation in This Area
40
is Limited by R DS(on) 100 ms

Limited by Package
30
1s
10 s
0 DC
10 20

Single Pulse 10
TJ=Max Rated
TA=25℃

-1
10 0
10
-1
10
0
10
1
10
2 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] ℃

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

1
10
, Normalized Thermal Response

D=0.5
0
10 0.2

0.1
0.05
※ Notes :
-1 0.02 Duty Factor, D=t 1/t2
10
PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA

0.01

-2 single pulse
10
JA
Zθ

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve

Jun. 2013 Ver1.2 4 MagnaChip Semiconductor Ltd.

 MDU5593S - Dual N-Channel Trench MOSFET 30V
FET2 Electrical Characteristics (Ta =25oC)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.8 3.0
Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - - 500
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 27A - 2.8 3.3
Drain-Source ON Resistance RDS(ON) mΩ
VGS = 4.5V, ID = 21A - 4.0 5.0
Forward Transconductance gfs VDS = 5V, ID = 21A - 46 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) - 26.1 -
Total Gate Charge Qg(4.5V) - 12.6 -
VDS = 15.0V, ID = 20A,
nC
Gate-Source Charge Qgs VGS = 10V - 4.5 -
Gate-Drain Charge Qgd - 4.2 -
Input Capacitance Ciss - 1785 -
VDS = 15.0V, VGS = 0V, -
Output Capacitance Coss 652 - pF
f = 1.0MHz
Reverse Transfer Capacitance Crss - 98 -
Turn-On Delay Time td(on) - 11.9 -
Rise Time tr - 8.9 -
VDD=15V, ID=20A, Rg=6Ω ns
Turn-Off Delay Time td(off) - 45.5 -
Fall Time tf - 14.5 -
Gate Resistance Rg f=1 MHz - 1.0 - Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1.0A, VGS = 0V - 0.4 0.7 V
Body Diode Reverse Recovery Time trr - 33.2 - ns
IF = 27A, dl/dt = 150A/μs
Body Diode Reverse Recovery Charge Qrr - 28.5 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 15.5A, VDD = 27V, VGS = 10V. And 100% UIL Test at L = 0.1mH, IAS = 18.0A.

Jun. 2013 Ver1.2 5 MagnaChip Semiconductor Ltd.

 MDU5593S - Dual N-Channel Trench MOSFET 30V
50 5.0
VGS = 10V

Drain-Source On-Resistance [mΩ]

4.5V 4.5
40
4.0V VGS = 4.5V
ID, Drain Current [A]

4.0
3.5V
30

3.5

20
3.0V VGS = 10V
3.0

10
2.5

0 2.0
0.0 0.2 0.4 0.6 0.8 1.0 10 20 30 40 50

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 20

※ Notes : ※ Notes :
18
1. VGS = 10 V ID = 21A
1.6 2. ID = 21 A
Drain-Source On-Resistance

16
Drain-Source On-Resistance
RDS(ON), (Normalized)

1.4 14
RDS(ON) [mΩ ],

12

1.2
10

8
1.0
6
TJ = 25 ℃

0.8 4

2
0.6
-50 -25 0 25 50 75 100 125 150 0
2 3 4 5 6 7 8 9 10
o
TJ, Junction Temperature [ C] VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage
Area
25
※ Notes : ※ Notes :
VDS = 5V VGS = 0V

20
IDR, Reverse Drain Current [A]

1
10
ID, Drain Current [A]

15
TJ=25 ℃

TJ=25 ℃

10
0
10

0
-1
1 2 3 4 10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VGS, Gate-Source Voltage [V]
VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jun. 2013 Ver1.2 6 MagnaChip Semiconductor Ltd.

 MDU5593S - Dual N-Channel Trench MOSFET 30V
10 3000
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 20A Coss = Cds + Cgd
Crss = Cgd
8
VGS, Gate-Source Voltage [V]

2000 Ciss

Capacitance [F]
6

Coss
4
1000
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
2
Crss

0
0 0 10 20 30
0 10 20 30

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10 100

10 ms 80
ID, Drain Current [A]

ID, Drain Current [A]

1
10
Operation in This Area
100 ms
60
is Limited by R DS(on)
1s
10 s
DC 40
0
10
Limited by Package

20
Single Pulse
TJ=Max Rated
TA=25 ℃

-1
10 0
-2 -1 0 1 2
10 10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] ℃

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

1
10
, Normalized Thermal Response

D=0.5
0
10
0.2
0.1
0.05 ※ Notes :
-1
0.02 Duty Factor, D=t1/t2
10
PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA

0.01

-2
10
JA
Zθ

single pulse

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve

Jun. 2013 Ver1.2 7 MagnaChip Semiconductor Ltd.

 MDU5593S - Dual N-Channel Trench MOSFET 30V
Package Dimension

Dual PDFN56 (5x6mm)

Dimensions are in millimeters, unless otherwise specified

Jun. 2013 Ver1.2 8 MagnaChip Semiconductor Ltd.

 MDU5593S - Dual N-Channel Trench MOSFET 30V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jun. 2013 Ver1.2 9 MagnaChip Semiconductor Ltd.