FDS6986S

April 2001

FDS6986S
Dual Notebook Power Supply N-Channel PowerTrench SyncFET™
General Description Features
The FDS6986S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction losses
MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode
power supplies that provide various peripheral voltages
for notebook computers and other battery powered 7.9A, 30V RDS(on) = 20 mΩ @ VGS = 10V
electronic devices. FDS6986S contains two unique RDS(on) = 28 mΩ @ VGS = 4.5V
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency. • Q1: Optimized for low switching losses
Low gate charge (6.5 nC typical)
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low- 6.5A, 30V RDS(on) = 29 mΩ @ VGS = 10V
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode RDS(on) = 38 mΩ @ VGS = 4.5V
using Fairchild’s monolithic SyncFET technology.
D2

Q2
D2

D 5 4
/S
1
/S

D
1
D1

D 6 3
D1

D
7 Q1 2
SO-8
G

G 8 1
2
S2

S
G

S
1 2
S1

Pin 1 SO-8 S
/D

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Q2 Q1 Units

VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±20 ±16 V
ID Drain Current - Continuous (Note 1a) 7.9 6.5 A
- Pulsed 30 20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS6986S FDS6986S 13” 12mm 2500 units

2001 Fairchild Semiconductor Corporation FDS6986S Rev C(W)

 FDS6986S
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown VGS = 0 V, ID = 1 mA Q2 30 V
Voltage VGS = 0 V, ID = 250 uA Q1 30
∆BVDSS Breakdown Voltage ID = 1 mA, Referenced to 25°C Q2 20 mV/°C
∆TJ Temperature Coefficient ID = 250 µA, Referenced to 25°C Q1 23
IDSS Zero Gate Voltage Drain VDS = 24 V, VGS = 0 V Q2 500 µA
Current Q1 1
IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V Q2 100 NA
VGS = 16 V, VDS = 0 V Q1
IGSSR Gate-Body Leakage, Reverse VGS = –20 V, VDS = 0 V Q2 –100 nA
VGS = –16 V, VDS = 0 V Q1
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA Q2 1 2.4 3 V
VDS = VGS, ID = 250 µA Q1 1 1.6 3
∆VGS(th) Gate Threshold Voltage ID = 1 mA, Referenced to 25°C Q2 –6 mV/°C
∆TJ Temperature Coefficient
ID = 250 uA, Referenced to 25°C Q1 –4
RDS(on) Static Drain-Source VGS = 10 V, ID = 7.9 A Q2 16 20 mΩ
On-Resistance VGS = 10 V, ID = 7.9 A, TJ = 125°C 24 32
VGS = 4.5 V, ID = 7 A 23 28
VGS = 10 V, ID = 6.5 A Q1 25 29
VGS = 10 V, ID = 6.5 A, TJ = 125°C 37 49
VGS = 4.5 V, ID = 5.6 A 30 38
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V Q2 30 A
Q1 20
gFS Forward Transconductance VDS = 5 V, ID = 7.9 A Q2 23 S
VDS = 5 V, ID = 6.5 A Q1 22

Dynamic Characteristics
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, Q2 1233 pF
f = 1.0 MHz Q1 695
Coss Output Capacitance Q2 344 pF
Q1 117
Crss Reverse Transfer Capacitance Q2 106 pF
Q1 58

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time VDD = 15 V, ID = 1 A, Q2 8 16 ns
VGS = 10V, RGEN = 6 Ω Q1 7 14
tr Turn-On Rise Time Q2 5 10 ns
Q1 4.5 9
td(off) Turn-Off Delay Time Q2 25 40 ns
Q1 20 36
tf Turn-Off Fall Time Q2 11 20 ns
Q1 2.5 5
Qg Total Gate Charge Q2: Q2 11 16 nC
VDS = 15 V, ID = 7.9 A, VGS = 5 V Q1 6.5 9
Qgs Gate-Source Charge Q2 5 nC
Q1: Q1 2.5
Qgd Gate-Drain Charge VDS = 15 V, ID = 6.5 A, VGS = 5 V Q2 4 nC
Q1 1.3

FDS6986S Rev C (W)

 Electrical Characteristics (continued) TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Q2 3.0 A
Q1 1.3
tRR Reverse Recovery Time IF = 10 A, Q2 17 ns
QRR Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 12.5 nC
VSD Drain-Source Diode Forward VGS = 0 V, IS = 3.5 A (Note 2) Q2 0.5 0.7 V
Voltage VGS = 0 V, IS = 1.3 A (Note 2) Q1 0.74 1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when b) 125°C/W when c) 135°C/W when

mounted on a mounted on a mounted on a
0.5in2 pad of 2 2
0.02 in pad of minimum pad.
oz copper 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. See “SyncFET Schottky body diode characteristics” below.

FDS6986S Rev C (W)

 FDS6986S
Typical Characteristics: Q2

50 2.6
VGS = 10V
6.0V VGS = 4.0V
5.0V
40 4.5V 2.2

30 1.8 4.5V

5.0V
4.0V
20 1.4
6.0V
8.0V
1 10V
10
3.5V

0.6
0
0 10 20 30 40 50
0 1 2 3
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.9 0.06
ID = 10A ID = 5A
VGS = 10V
0.05
1.6

0.04
1.3

0.03 o
TA = 125 C
1
0.02
o
0.7 TA = 25 C
0.01

0.4
0
-50 -25 0 25 50 75 100 125 150
2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

50 10
VGS = 0V
VDS = 5V o
TA = -55 C o
25 C
40 1 o
o TA = 125 C
125 C
o
30 25 C
0.1
o
-55 C
20

0.01
10

0 0.001

1.5 2.5 3.5 4.5 5.5 0 0.2 0.4 0.6 0.8

VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6986S Rev C (W)

 FDS6986S
Typical Characteristics: Q2

10 2000
ID =10A VDS = 5V f = 1MHz
10V VGS = 0 V
8 1600
15V
CISS

6 1200

4 800

COSS
2 400

CRSS
0 0
0 3 6 9 12 15 18 21 0 5 10 15 20 25 30

Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
RDS(ON) LIMIT
100µs SINGLE PULSE
1ms 40 RθJA = 135°C/W
10 10ms TA = 25°C
100ms
30
1s
1
10s
DC 20
VGS = 10V
0.1 SINGLE PULSE
o
RθJA = 135 C/W 10
o
TA = 25 C
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000

VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

FDS6986S Rev C (W)

 FDS6986S
Typical Characteristics Q1

20 2.25
VGS = 10V

DRAIN-SOURCE ON-RESISTANCE
4.5V 2
6.0V 3.5V VGS = 3.0V
ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
15 3.0V
1.75

10 1.5
3.5V

1.25 4.5V

5 6.0V
2.5V 1 10V

0.75
0
0 5 10 15 20
0 0.5 1 1.5 2 2.5 3
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8 0.075
DRAIN-SOURCE ON-RESISTANCE

ID = 6.5A ID = 3.3 A
RDS(ON), ON-RESISTANCE (OHM)

1.6 VGS = 10V 0.065

RDS(ON), NORMALIZED

1.4 0.055

TA = 125oC
1.2
0.045

1
0.035
TA = 25oC
0.8
0.025

0.6
-50 -25 0 25 50 75 100 125 150 0.015
o 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 13. On-Resistance Variation with Figure 14. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.

100
20
VGS = 0V
TA = -55oC
IS, REVERSE DRAIN CURRENT (A)

VDS = 5V o
25 C 10
16
ID, DRAIN CURRENT (A)

125oC TA = 125oC
1

12 25oC
0.1
-55oC
8
0.01

4 0.001

0.0001
0
0 0.2 0.4 0.6 0.8 1 1.2
1.5 2 2.5 3 3.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.

FDS6986S Rev C (W)

 FDS6986S
Typical Characteristics Q1

10 1000
VDS = 5V f = 1MHz
ID = 6.5A
VGS, GATE-SOURCE VOLTAGE (V)

VGS = 0 V
10V
8 800
15V CISS

CAPACITANCE (pF)
6 600

4 400

2 200
COSS
CRSS

0 0
0 3 6 9 12 0 4 8 12 16 20
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

100 50
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
100µs RθJA = 135°C/W
40
ID, DRAIN CURRENT (A)

10 1ms TA = 25°C
RDS(ON) LIMIT
10ms
100ms 30
1 1s
10s
DC 20
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W 10
TA = 25oC

0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
r(t), NORMALIZED EFFECTIVE

RθJA(t) = r(t) + RθJA

0.2
RθJA = 135 °C/W
0.1
0.1
0.05
P(pk)
0.02
0.01 t1
0.01 t2

TJ - TA = P * RθJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6986S Rev C (W)

 FDS6986S
Typical Characteristics (continued) This section copied from FDS6984S datasheet

SyncFET Schottky Body Diode

Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in Schottky barrier diodes exhibit significant leakage at high
parallel with PowerTrench MOSFET. This diode exhibits temperature and high reverse voltage. This will increase
similar characteristics to a discrete external Schottky the power in the device.
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6986S.
0.1

IDSS, REVERSE LEAKAGE CURRENT (A)

125oC

0.01

0.001

o
0.0001 25 C
3A/DIV

0.00001
0 10 20 30

VDS, REVERSE VOLTAGE (V)

Figure 24. SyncFET body diode reverse

leakage versus drain-source voltage and
temperature.
10nS/DIV

Figure 22. FDS6986S SyncFET body diode

reverse recovery characteristic.

For comparison purposes, Figure 23 shows the reverse

recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
3A/DIV

0V

10nS/DIV

Figure 23. Non-SyncFET (FDS6690A) body

diode reverse recovery characteristic.

FDS6986S Rev C (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  PACMAN™ SuperSOT™-3
Bottomless™ FASTr™ POP™ SuperSOT™-6
CoolFET™ GlobalOptoisolator™ PowerTrench  SuperSOT™-8
CROSSVOLT™ GTO™ QFET™ SyncFET™
DenseTrench™ HiSeC™ QS™ TinyLogic™
DOME™ ISOPLANAR™ QT Optoelectronics™ UHC™
EcoSPARK™ LittleFET™ Quiet Series™ UltraFET 
E2CMOSTM MicroFET™ SILENT SWITCHER  VCX™
EnSignaTM MICROWIRE™ SMART START™
FACT™ OPTOLOGIC™ Star* Power™
FACT Quiet Series™ OPTOPLANAR™ Stealth™
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H1
This datasheet has been download from:

www.datasheetcatalog.com

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