FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

April 2007

FDS6298 tm

30V N-Channel Fast Switching PowerTrench MOSFET
General Description Features
This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional RDS(ON) = 12 mΩ @ VGS = 4.5 V
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed. Low gate charge (10nC @ VGS=5V)

Applications Very low Miller Charge (3nC)

Control Switch for DC-DC Buck converters Low Rg (1 Ohm)

Notebook Vcore ROHS Compliant

Telecom / Networking Point of Load

DD 5 4
DD
DD 6 3
DD
7 2
SO-8 G
SS G 8 1
S
www.DataSheet4U.com

Pin 1 SO-8 SS S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
Drain Current – Continuous (Note 1a) 13
ID A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 3.0
PD W
Power Dissipation for Single Operation (Note 1b) 1.2
EAS Single Pulse Avalanche Energy (Note 3) 181 mJ
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS6298 FDS6298 13’’ 12mm 2500 units

2007 Fairchild Semiconductor Corporation FDS6298 Rev. C1 ( W)

 FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 - - V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C - 30 - mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V - - 1 µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V - - ±100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V

∆VGS(th) Gate Threshold Voltage
ID = 250 µA, Referenced to 25°C - –5 - mV/°C
∆TJ Temperature Coefficient
VGS = 10 V, ID = 13 A 7.4 9
Static Drain–Source VGS = 4.5 V, ID = 12 A 9.4 12 mΩ
RDS(ON) -
On–Resistance
VGS= 10 V, ID = 13 A, TJ=125°C 11 15
gFS Forward Transconductance VDS = 10 V, ID = 13 A - 58 - S

Dynamic Characteristics
Ciss Input Capacitance - 1108 - pF
VDS = 15 V, V GS = 0 V,
Coss Output Capacitance - 310 - pF
f = 1.0 MHz
Crss Reverse Transfer Capacitance - 109 - pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 0.3 1 1.7 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time - 11 20 ns

tr Turn–On Rise Time VDD = 15 V, ID = 1 A, - 5 10 ns
td(off) Turn–Off Delay Time VGS = 10 V, RGEN = 6 Ω - 27 43 ns
tf Turn–Off Fall Time - 7 14 ns
Qg Total Gate Charge - 10 14 nC
Qgs Gate–Source Charge VDS = 15 V, ID = 13 A, - 3 - nC
VGS = 5 V
Qgd Gate–Drain Charge - 3 - nC

Drain–Source Diode Characteristics

Drain–Source Diode Forward
VSD VGS = 0 V, IS = 2.1 A (Note 2) - 0.74 1.2 V
Voltage
trr Diode Reverse Recovery Time IF = 13 A, dIF/dt = 100 A/µs - 27 - ns
Qrr Diode Reverse Recovery Charge - 13 - nC

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user'
s board design.

a) 50°C/W when mounted b) 125°C/W when mounted on a

2
on a 1in pad of 2 oz minimum pad.
copper

Scale 1 : 1 on letter size paper

2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V

FDS6298 Rev. C1 (W)

 FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET
Typical Characteristics

80 2.6
VGS = 10V 4.5V 4.0V

DRAIN-SOURCE ON-RESISTANCE
70 2.4
VGS = 3.0V
6.0V
2.2
60
ID, DRAIN CURRENT (A)

3.5.V

RDS(ON), NORMALIZED
2
50
1.8
3.5V
40
1.6
4.0V
30 1.4
3.0V 4.5V
5.0V
20 1.2 6.0V
10V
10 1

0
0.8
0 0.5 1 1.5 2 2.5 0 10 20 30 40 50 60 70 80

VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8 0.028
ID = 13A ID = 6.5A
DRAIN-SOURCE ON-RESISTANCE

VGS = 10V
0.024
RDS(ON), ON-RESISTANCE (OHM)
1.6
RDS(ON), NORMALIZED

1.4 0.02

1.2 0.016
TA = 125oC
1 0.012

0.8 0.008
TA = 25oC
0.6
0.004
-50 -25 0 25 50 75 100 125 150
2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

100
80
VDS = 5V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

70 10
TA = -55oC 25oC
TA = 125oC
ID, DRAIN CURRENT (A)

60
1
125o
50 C 25oC
0.1
40
-55oC
30 0.01

20
0.001
10
0.0001
0
0 0.2 0.4 0.6 0.8 1 1.2
1.5 2 2.5 3 3.5 4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6298 Rev. C1 (W)

 FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET
Typical Characteristics

10 1500
f = 1MHz
ID = 13A
VGS, GATE-SOURCE VOLTAGE (V)

VDS = 10V 15V CISS VGS = 0 V

8 1200

CAPACITANCE (pF)
20V
6 900

4 600
COSS

2 300
CRSS

0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100
100
100µs
RDS(ON) LIMIT IAS, AVALANCHE CURRENT (A)
1ms
ID, DRAIN CURRENT (A)

10
10ms
100ms
1s
10s
1
DC 10
25
VGS = 10V
0.1 SINGLE PULSE 125
RθJA = 125oC/W
o
TA = 25 C
0.01 1
0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (mS)

Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching
Capability

50
SINGLE PULSE
P(pk), PEAK TRANSIENT POWER (W)

R θJA = 125°C/W
40 TA = 25°C

30

20

10

0
0.001 0.01 0.1 1 10 100
t1, TIME (sec)

Figure 11. Single Pulse Maximum Power Dissipation.

FDS6298 Rev. C1 (W)

 FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET
Typical Characteristics

TRANSIENT THERMAL RESISTANCE

1
r(t), NORMALIZED EFFECTIVE

D = 0.5
RθJA(t) = r(t) * RθJA
0.2 RθJA = 125 °C/W
0.1 0.1

0.05 P(pk)
0.02
t1
0.01 0.01
t2
TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 12. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6298 Rev. C1 (W)

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete Not In Production This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I26

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com