DN2535

DN2540

N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
BVDSX / RDS(ON) IDSS Order Number / Package
BVDGX (max) (min) TO-92 TO-220 TO-243AA*
350V 25Ω 150mA DN2535N3 DN2535N5 —
400V 25Ω 150mA DN2540N3 DN2540N5 DN2540N8
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

Product marking for TO-243AA:

Features DN5D❋
❏ High input impedance Where ❋ = 2-week alpha date code
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
Advanced DMOS Technology
Not recommended for new designs. For products in TO-92
❏ Free from secondary breakdown (N3) package and TO-243AA (N8) package, please use DN3535
❏ Low input and output leakage or DN3545 instead.
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
Applications bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
❏ Normally-on switches
istic of all MOS structures, these devices are free from thermal
❏ Solid state relays runaway and thermally-induced secondary breakdown.
❏ Converters Supertex’s vertical DMOS FETs are ideally suited to a wide range
❏ Linear amplifiers of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
❏ Constant current sources switching speeds are desired.
❏ Power supply circuits
❏ Telecom
Package Options

Absolute Maximum Ratings

D
Drain-to-Source Voltage BVDSX G
D G D
Drain-to-Gate Voltage BVDGX S S

Gate-to-Source Voltage ± 20V TO-243AA SGD TO-220

(SOT-89) TO-92 TAB: DRAIN
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.

12/13/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products,
 DN2535/DN2540

Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR* IDRM
@ TC = 25°C °C/W °C/W
TO-92 120mA 500mA 1.0W 125 170 120mA 500mA
TO-220 500mA 500mA 15.0W 8.3 70 500mA 500mA
TO-243AA 170mA 500mA 1.6W (TA = 25°)† 15 78† 170mA 500mA
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. TA = 25°C

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions
BVDSX Drain-to-Source DN2540 400 V VGS = -5V, ID = 100µA
Breakdown Voltage
DN2535 350
VGS(OFF) Gate-to-Source OFF Voltage –1.5 –3.5 V VDS = 25V, ID= 10µA
∆VGS(OFF) Change in VGS(OFF) with Temperature 4.5 mV/°C VDS = 25V, ID= 10µA
IGSS Gate Body Leakage Current 100 nA VGS = ± 20V, VDS = 0V
ID(OFF) Drain-to-Source Leakage Current 10 µA VGS = -10V, VDS = Max Rating
1 mA VGS = -10V, VDS = 0.8 Max Rating
TA = 125°C
IDSS Saturated Drain-to-Source Current 150 mA VGS = 0V, VDS = 25V
RDS(ON) Static Drain-to-Source 17 25 Ω VGS = 0V, ID = 120mA
ON-State Resistance
∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°C VGS = 0V, ID = 120mA
Ω
GFS Forward Transconductance 325 m ID = 100mA, VDS = 10V
CISS Input Capacitance 200 300 VGS = -10V, VDS = 25V
COSS Common Source Output Capacitance 12 30 pF f = 1 MHz
CRSS Reverse Transfer Capacitance 1 5
td(ON) Turn-ON Delay Time 10 VDD = 25V,
tr Rise Time 15 ns ID = 150mA,
td(OFF) Turn-OFF Delay Time 15 RGEN = 25Ω
tf Fall Time 20
VSD Diode Forward Voltage Drop 1.8 V VGS = -10V, ISD = 120mA
trr Reverse Recovery Time 800 ns VGS = -10V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit VDD

0V RL
90% PULSE
INPUT GENERATOR
OUTPUT
-10V 10%
Rgen
t(ON) t(OFF)

td(ON) tr td(OFF) tF
D.U.T.
VDD INPUT
10% 10%
OUTPUT
0V 90% 90%

2
 DN2535/DN2540

Typical Performance Curves

Output Characteristics Saturation Characteristics

0.5 250
VGS = 1.0V
0.5V VGS = 1.0V
0.4 200 0.5V
0V

ID (milliamps)
ID (amperes)

0V
0.3 150

-0.5V
0.2 100

0.1 -0.5V
50

-1.0V
-1.0V
0 0
0 80 160 240 320 400 0 1 2 3 4 5
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Temperature

0.5 20
VDS = 10V

0.4
TO-220
TA = -55°C
GFS (siemens)

0.3
TA = 25°C
PD (watts)

10

0.2 TA = 125°C

0.1
TO-243AA (TA = 25°C)
TO-92
0 0
0 50 100 150 200 250 0 25 50 75 100 125 150
ID (milliamps) TC (°C)

Maximum Rated Safe Operating Area Thermal Response Characteristics

1 1.0

TO-92/TO-220 (pulsed) TO-243AA

Thermal Resistance (normalized)

(TA = 25°C) TO-220 (DC)

TA = 25°C
0.8 PD = 1.6W
SOT-89 (DC)

0.1
ID (amperes)

TO-92 (DC)
0.6

0.4
TO-220 TO-92
0.01
TC = 25°C TC = 25°C
PD = 15W PD = 1.0W
0.2

TC = 25°C 0
0.001
1 10 100 1000 0.001 0.01 0.1 1 10
VDS (volts) tp (seconds)

3
 DN2535/DN2540

Typical Performance Curves

BVDSS Variation with Temperature On-Resistance vs. Drain Current

1.1 100

VGS = -5V VGS = 0V

1.05 80
BVDSS Normalized

RDS(on) (Ohms)
1.0 60

0.95 40

0.9 20

0
-50 0 50 100 150 0 80 160 240 320 400

Tj (°C) ID (milliamps)

Transfer Characteristics VGS(off) and RDS Variation with Temperature

0.40 2.5
TA = -55°C

VDS = 10V
0.32 2
TA = 25°C
RDS (ON) @ ID = 120mA
ID (amperes)

0.24
Normalized

1.5
TA = 125°C

0.16 1
VGS(OFF) @ 10µA

0.08 0.5

0 0
-3 2 -1 0 1 2 -50 0 50 100 150
VGS (Volts) Tj (°C)

Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

200

15
CISS

150
10
C (Picofarads)

200pF
VGS (Volts)

100 5 VDS = 20V

VGS = -10V

0
50 VDS = 40V

COSS -5
CRSS 170pF
0
0 10 20 30 40 0 0.4 0.8 1.2 1.6 2.0

VDS (Volts) QC (Nanocoulombs)

12/13/010

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 www.supertex.com