www.DataSheet.co.

kr

STGW39NC60VD

40 A - 600 V - very fast IGBT

Features
■ Low CRES / CIES ratio (no cross conduction
susceptibility)
■ IGBT co-packaged with ultra fast free-wheeling
diode
3
2
Applications 1

TO-247
■ High frequency inverters
■ UPS
■ Motor drivers
■ Induction heating

Description
Figure 1. Internal schematic diagram
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behaviour.

Table 1. Device summary

Order code Marking Package Packaging

STGW39NC60VD GW39NC60VD TO-247 Tube

January 2008 Rev 7 1/15

www.st.com 15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

Contents STGW39NC60VD

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

STGW39NC60VD Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 600 V

IC(1) Collector current (continuous) at 25 °C 80 A

IC (1) Collector current (continuous) at 100 °C 40 A

ICL (2) Turn-off latching current 220 A

ICP (3) Pulsed collector current 220 A

VGE Gate-emitter voltage ± 20 V

IF Diode RMS forward current at TC = 25 °C 30 A
Surge non repetitive forward current
IFSM 120 A
(tp=10 ms sinusoidal)
PTOT Total dissipation at TC = 25 °C 250 W
Tj Operating junction temperature – 55 to 150 °C
1. Calculated according to the iterative formula:
T –T
JMAX C
I ( T ) = -----------------------------------------------------------------------------------------------------
-
C C R × V (T , I )
THJ – C CESAT ( MAX ) C C

2. Vclamp = 80%(VCES) , Tj = 150 °C, RG = 10 Ω, VGE= 15 V

3. Pulse width limited by max. junction temperature allowed

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max (IGBT) 0.5 °C/W

Rthj-case Thermal resistance junction-case max (diode) 1.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 50 °C/W

3/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

Electrical characteristics STGW39NC60VD

2 Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. Static
Symbol Parameter Test conditions Min. Typ Max. Unit

Collector-emitter breakdown
V(BR)CES IC = 1 mA 600 V
voltage (VGE = 0)

Collector-emitter saturation VGE = 15 V, IC = 30 A 1.8 2.5 V

VCE(sat)
voltage VGE = 15 V, IC = 30 A,TC=125 °C 1.7 V

VGE(th) Gate threshold voltage VCE= VGE, IC=1 mA 3.75 5.75 V

Collector-emitter cut-off VCE = 600 V 500 µA

ICES
current (VGE = 0) VCE= 600 V, TC = 125 °C 5 mA

Gate-emitter cut-off
IGES VGE = ± 20 V ±100 nA
current (VCE = 0)

gfs (1) Forward transconductance VCE = 15 V, IC= 30 A 20 S

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max Unit

Cies Input capacitance

2900 pF
Output capacitance
Coes VCE = 25 V, f = 1 MHz, VGE= 0 298 pF
Reverse transfer
Cres 59 pF
capacitance
Qg Total gate charge VCE = 390 V, IC = 30 A, 126 nC
Qge Gate-emitter charge VGE = 15 V 16 nC
Qgc Gate-collector charge (see Figure 19) 46 nC

4/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

STGW39NC60VD Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCC = 390 V, IC = 30 A, 33 ns

tr Current rise time RG=10 Ω, VGE = 15 V 13 ns
(di/dt)onf Turn-on current slope (see Figure 18) 2500 A/µs

VCC = 390 V, IC = 30 A,
td(on) Turn-on delay time 32 ns
RG=10Ω, VGE=15 V
tr Current rise time 14 ns
TC=125 °C
(di/dt)on Turn-on current slope 2280 A/µs
(see Figure 18)
tr(Voff) Off voltage rise time VCC = 390 V, IC = 30 A, 33 ns
td(off) Turn-off delay time RG=10 Ω, VGE=15 V 178 ns
tf Current fall time (see Figure 18) 65 ns

VCC = 390 V, IC = 30 A,
tr(Voff) Off voltage rise time 68 ns
RG=10 Ω, VGE=15 V
td(off) Turn-off delay time 238 ns
TC=125 °C
tf Current fall time 128 ns
(see Figure 18)

Table 7. Switching energy (inductive load)

Symbol Parameter Test conditions Min Typ. Max Unit

Eon (1) Turn-on switching losses VCC = 390V, IC = 30A 333 µJ

Eoff(2) Turn-off switching losses RG= 10Ω, VGE= 15V, 537 µJ
Ets Total switching losses (see Figure 20) 870 µJ
VCC = 390V, IC = 30A
Eon (1) Turn-on switching losses 618 µJ
RG= 10Ω, VGE= 15V,
Eoff (2) Turn-off switching losses 1125 µJ
TC= 125°C
Ets Total switching losses 1743 µJ
(see Figure 20)
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current

5/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

Electrical characteristics STGW39NC60VD

Table 8. Collector-emitter diode

Symbol Parameter Test conditions Min Typ. Max Unit

IF = 30 A 2.4 V
VF Forward on-voltage
IF = 30 A, TC = 125 °C 1.8 V

trr Reverse recovery time IF = 30 A, VR = 50 V, 45 ns

Qrr Reverse recovery charge di/dt =100 A/µs 56 nC
Irrm Reverse recovery current (see Figure 21) 2.55 A

IF = 30 A, VR = 50 V,
trr Reverse recovery time 100 ns
TC= 125 °C,
Qrr Reverse recovery charge 290 nC
di/dt =100 A/µs
Irrm Reverse recovery current 5.8 A
(see Figure 21)

6/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

STGW39NC60VD Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 2. Output characteristics Figure 3. Transfer characteristics

Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs

temperature

Figure 6. Collector-emitter on voltage vs Figure 7. Normalized gate threshold vs

collector current temperature

7/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

Electrical characteristics STGW39NC60VD

Figure 8. Normalized breakdown voltage vs Figure 9. Gate charge vs gate-emitter voltage

temperature

Figure 10. Capacitance variations Figure 11. Switching losses vs temperature

Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current

8/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

STGW39NC60VD Electrical characteristics

Figure 14. Thermal impedance Figure 15. Turn-off SOA

Figure 16. Emitter-collector diode Figure 17. IC vs. frequency

characteristics
IFM(A)
120
110 Tj=125°C
(Maximum values)
100
90
80
Tj=125°C
70 (Typical values)

60
Tj=25°C
50 (Maximum values)

40
30
20
10 VFM(V)
0
0 1 2 3 4 5 6

2.2 Frequency applications

For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
● The maximum power dissipation is limited by maximum junction to case thermal
resistance:

Equation 1
PD = ∆T / RTHJ-C
considering ∆T = TJ - TC = 125 °C - 75 °C = 50 °C
● The conduction losses are:

9/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

Electrical characteristics STGW39NC60VD

Equation 2
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value @125 °C.
● Power dissipation during ON & OFF commutations is due to the switching frequency:

Equation 3
PSW = (EON + EOFF) * freq.
● Typical values @ 125 °C for switching losses are used (test conditions: VCE = 390 V,
VGE = 15 V, RG = 10 Ω). Furthermore, diode recovery energy is included in the EON
(see note 2), while the tail of the collector current is included in the EOFF measurements
(see note 3).

10/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

STGW39NC60VD Test circuit

3 Test circuit

Figure 18. Test circuit for inductive load Figure 19. Gate charge test circuit
switching

Figure 20. Switching waveforms Figure 21. Diode recovery times waveform

11/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

Package mechanical data STGW39NC60VD

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

12/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

STGW39NC60VD Package mechanical data

TO-247 mechanical data

Dim. mm.
Min. Typ Max .
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50

13/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

Revision history STGW39NC60VD

5 Revision history

Table 9. Document revision history

Date Revision Changes

17-Nov-2005 1 First release

05-May-2006 2 Inserted curves
10-Jul-2006 3 Modified value on Absolute maximum ratings
01-Dec-2006 4 Modified value on Dynamic
16-May-2007 5 New curves updated:Figure 5 and Figure 6
Added new Figure 17 and new section 2.2: Frequency
22-Aug-2007 6
applications
31-Jan-2008 7 Modified: Table 8: Collector-emitter diode

14/15

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

STGW39NC60VD

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2008 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com

15/15

Datasheet pdf - http://www.DataSheet4U.net/