STP62NS04Z

N-channel clamped 12.5 mΩ, 62 A, TO-220

fully protected MESH OVERLAY™ Power MOSFET

Features
RDS(on)
Type VDSS ID
max

STP62NS04Z Clamped < 0.015 Ω 62 A

■ 100% avalanche tested 3

2
1
■ Low capacitance and gate charge TO-220
■ 175 °C maximum junction temperature

Application
■ Switching applications

Description Figure 1. Internal schematic diagram

D(2)
Fully clamped MOSFET is produced by using
ST's most advanced MESH OVERLAY™ process
based on strip layout. The inherent benefits of this
new technology coupled with the extra clamping
capabilities make this product particularly suitable
for the harshest operating conditions such as
G(1)
those encountered in the automotive
environment. It is also recommended for any
other application requiring extra ruggedness.

S(3) SC12470

Table 1. Device summary

Order code Marking Package Packaging

STP62NS04Z P62NS04Z TO-220 Tube

May 2009 Doc ID 9859 Rev 6 1/12

www.st.com 12
Contents STP62NS04Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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STP62NS04Z Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) Clamped V

VGS Gate-source voltage Clamped V
ID Drain current (continuous) at TC = 25 °C 62 A
ID Drain current (continuous) at TC=100 °C 37.5 A
IDG Drain gate current (continuous) ± 50 mA
IGS Gate sourcecurrent (continuous) ± 50 mA
IDM (1) Drain current (pulsed) 248 A
PTOT Total dissipation at TC = 25 °C 110 W
Derating factor 0.74 W/°C
(2)
dv/dt Peak diode recovery voltage slope 8 V/ns
(3)
EAS Single pulse avalanche energy 500 mJ
VESD ESD (HBM - C = 100 pF, R = 1.5 kΩ) 8 V
TJ Operating junction temperature
-55 to 175 °C
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 40 A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
3. Starting TJ = 25 °C, ID = 20 A, VDD = 20 V

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-c Thermal resistance junction-casemax 1.36 °C/W

Rthj-a Thermal resistance junction-ambient max 62.5 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose

Doc ID 9859 Rev 6 3/12

Electrical characteristics STP62NS04Z

2 Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1 mA, VGS= 0 33 V
voltage
Zero gate voltage drain
IDSS VDS = 16 V 10 µA
current (VGS = 0)
Gate body leakage current
IGSS VGS = ±10 V 10 µA
(VDS = 0)
Gate-source
VGSS IGS = 100 µA 18 V
breakdown voltage
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V
Static drain-source on
RDS(on) VGS = 10 V, ID = 30 A 12.5 15 mΩ
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS = 15 V, ID = 30 A - 20 S

Input capacitance
Ciss 1330 pF
Output capacitance VDS =25 V, f = 1 MHz,
Coss - 420 pF
Reverse transfer VGS = 0
Crss 135 pF
capacitance
Qg Total gate charge 34 47 nC
VDD = 20 V, ID = 40 A
Qgs Gate-source charge - 10 nC
VGS =10 V
Qgd Gate-drain charge 11.5 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 13 ns

VDD= 20 V, ID= 20 A,
tr Rise time 104 ns
RG=4.7 Ω, VGS = 10 V - -
td(off) Turn-off delay time 41 ns
Figure 14 on page 8
tf Fall time 42 ns
tr(Voff) Off-voltage rise time Vclamp = 30 V, ID = 40 A 30 ns
tf Fall time RG = 4.7 Ω, VGS = 10 V - 54 - ns
tc Cross-over time Figure 14 on page 8 90 ns

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STP62NS04Z Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current - 62 A

(1)
ISDM Source-drain current (pulsed) - 248 A
VSD (2) Forward on voltage ISD = 62 A, VGS = 0 - 1.5 V
ISD = 40 A,
trr Reverse recovery time 45 ns
di/dt = 100 A/µs,
Qrr Reverse recovery charge - 65 nC
VDD = 20 V, TJ = 150 °C
IRRM Reverse recovery current 2.9 A
Figure 16 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Doc ID 9859 Rev 6 5/12

Electrical characteristics STP62NS04Z

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characterisics Figure 5. Transfer characteristics

Figure 6. Transconductance Figure 7. Static drain-source on resistance

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STP62NS04Z Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature

Figure 12. Source-drain diode forward Figure 13. Normalized BVDSS vs temperature
characteristics

Doc ID 9859 Rev 6 7/12

Test circuits STP62NS04Z

3 Test circuits

Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. µF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test
switching and diode recovery times circuit

L
A A A
D
FAST L=100µH VD
G D.U.T. DIODE 2200 3.3
µF µF VDD
S B 3.3 1000
B B µF µF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 18. Unclamped inductive waveform

V(BR)DSS

VD

IDM

ID

VDD VDD

AM01472v1

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STP62NS04Z Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

Doc ID 9859 Rev 6 9/12

Package mechanical data STP62NS04Z

TO-220 mechanical data

mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.48 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
∅P 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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STP62NS04Z Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes

21-Jun-2004 2 Preliminary datasheet

22-Aug-2005 3 Complete document with curves
21-Jan-2006 4 New ECOPAK label
02-Oct-2006 5 New template, no content change
14-May-2009 6 Updated scheme in Figure 1

Doc ID 9859 Rev 6 11/12

 STP62NS04Z

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12/12 Doc ID 9859 Rev 6