The RF Mosfet Line N-Channel Enhancement-Mode Lateral Mosfets

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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC.

2005
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SEMICONDUCTOR TECHNICAL DATA by MRF184/D

The RF MOSFET Line


  
  
N–Channel Enhancement–Mode Lateral MOSFETs 
Designed for broadband commercial and industrial applications with frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in 28
volt base station equipment. 1.0 GHz, 60 W, 28 V
• Guaranteed Performance @ 945 MHz, 28 Volts  LATERAL N–CHANNEL
Output Power = 60 Watts BROADBAND
Power Gain = 11.5 dB RF POWER MOSFETs
Efficiency = 53%
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• S–Parameter Characterization at High Bias Levels 
CASE 360B–05, STYLE 1
• 100% Tested for Load Mismatch Stress at all Phase NI–360
Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW MRF184R1
• In Tape and Reel. 500 Units per 32 mm, 13 inch Reel. 

CASE 360C–05, STYLE 1


NI–360S
MRF184SR1
ARCHIVED 2005

MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 65 Vdc
Gate–Source Voltage VGS ±20 Vdc
Drain Current — Continuous ID 7 Adc
Total Device Dissipation @ TC = 70°C PD 118 Watts
Derate above 70°C 0.9 W/°C
Storage Temperature Range Tstg – 65 to +150 °C
Operating Junction Temperature TJ 200 °C

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.1 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)


Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Drain–Source Breakdown Voltage V(BR)DSS 65 – – Vdc
(VGS = 0 Vdc, ID = 1 mAdc)
Zero Gate Voltage Drain Current IDSS – – 1 µAdc
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current IGSS – – 1 µAdc
(VGS = 20 Vd, VDS = 0 Vdc)

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 10

MOTOROLA
 Motorola, RF DEVICE DATA
Inc. 2002
MRF184R1 MRF184SR1
1
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)


Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage VGS(th) 2 3 4 Vdc
(VDS = 10 V, ID = 200 µA)
Gate Quiescent Voltage VGS(Q) 3 4 5 Vdc
(VDS = 28 V, ID = 100 mA)
Drain–Source On–Voltage VDS(on) – 0.65 0.8 Vdc
(VGS = 10 V, ID = 3 A)
Forward Transconductance gfs 2.2 2.6 – s
(VDS = 10 V, ID = 3 A)

DYNAMIC CHARACTERISTICS
Input Capacitance Ciss – 83 – pF
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Output Capacitance Coss – 44 – pF
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance Crss – 4.3 – pF
(VDS = 28 V, VGS = 0 V, f = 1 MHz)

FUNCTIONAL CHARACTERISTICS
Common Source Power Gain Gps 11.5 13.5 – dB
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Drain Efficiency η 53 60 – %
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Load Mismatch ψ
(VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz, No Degradation in Output Power
ARCHIVED 2005

Load VSWR 5:1 at all Phase Angles)

   

  
 

 
   




  

  
 



B1 Short RF Bead Fair Rite–2743019447 L1 5 Turns, 20 AWG, IDIA 0.126″


C1 18 pF Chip Capacitor R1 10 kΩ, 1/4 W Resistor
C2, C3, C6, C9 43 pF Chip Capacitor R2 13 kΩ, 1/4 W Resistor
C4 100 pF Chip Capacitor R3 1.0 kΩ, 1/4 W Chip Resistor
C5, C12 10 µF, 50 Vdc Electrolytic Capacitor R4 4 x 39 Ω, 1/8 W Chip Resistor
C7, C10 1000 pF Chip Capacitor TL1–TL4 Microstrip Line See Photomaster
C8, C11 0.1 µF, 50 Vdc Chip Capacitor Ckt Board 1/32″ Glass Teflon, εr = 2.55
C13 250 µF, 50 Vdc Electrolytic Capacitor ARLON–GX–0300–55–22

Figure 1. MRF184 Test Circuit Schematic

MRF184R1 MRF184SR1 MOTOROLA RF DEVICE DATA


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TYPICAL CHARACTERISTICS

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Figure 2. Intermodulation Distortion Products Figure 3. Intermodulation Distortion versus


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Figure 4. Power Gain versus Output Power Figure 5. Output Power versus Input Power

 
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Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Gate Voltage

MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1


3
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

TYPICAL CHARACTERISTICS



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Figure 8. Output Power versus Frequency Figure 9. Drain Current versus Gate Voltage

 

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Figure 12. DC Safe Operating Area Figure 13. Performance in Broadband Circuit

MRF184R1 MRF184SR1 MOTOROLA RF DEVICE DATA


4
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005




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ARCHIVED 2005

 
 
 

 MRF184

Figure 15. Component Parts Layout

MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1


5
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

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ARCHIVED 2005

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f Zin ZOL*
MHz Ohms Ohms
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Zin = Conjugate of source impedance.

Zout = Conjugate of the load impedance at a given output


power, voltage, frequency and efficiency.

Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability.

Figure 16. Series Equivalent Input and Output Impedance

MRF184R1 MRF184SR1 MOTOROLA RF DEVICE DATA


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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

Table 1. Common Source S–Parameters (VDS = 13.5 V)

ID = 2.0 A
S11 S21 S12 S22
f
MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
20 0.916 179 10.88 80 0.014 –22 0.843 175
30 0.917 178 9.26 79 0.014 –25 0.847 174
40 0.918 177 8.10 78 0.015 –29 0.852 174
50 0.919 176 7.16 77 0.015 –33 0.853 174
100 0.919 175 4.57 75 0.015 –35 0.855 173
150 0.920 174 3.34 67 0.015 –38 0.865 173
200 0.921 173 2.60 62 0.014 –41 0.867 173
250 0.922 173 2.11 59 0.014 –45 0.877 173
300 0.928 172 1.77 55 0.014 –49 0.881 173
350 0.938 172 1.50 50 0.013 –55 0.887 173
400 0.941 171 1.28 47 0.013 –59 0.895 173
450 0.942 171 1.12 44 0.012 –62 0.896 173
500 0.943 171 1.00 41 0.012 –68 0.898 172
550 0.945 171 0.91 38 0.010 –75 0.899 172
600 0.947 171 0.80 35 0.010 –79 0.903 172
650 0.948 171 0.71 33 0.009 –85 0.905 172
700 0.955 170 0.65 30 0.008 –88 0.909 172
750 0.959 170 0.60 28 0.008 –95 0.919 172
800 0.962 169 0.55 25 0.007 –102 0.922 172
850 0.963 169 0.50 23 0.007 –111 0.923 171
ARCHIVED 2005

900 0.964 169 0.45 21 0.007 –118 0.926 171


950 0.968 169 0.43 19 0.006 –125 0.929 171
1000 0.970 169 0.39 18 0.006 –129 0.933 171
1050 0.971 168 0.36 17 0.005 –134 0.935 171
1100 0.972 168 0.34 14 0.005 –142 0.936 170
1150 0.973 168 0.32 13 0.005 –149 0.938 170
1200 0.974 167 0.29 12 0.006 –156 0.940 169
1250 0.976 167 0.28 10 0.007 –162 0.943 169
1300 0.975 167 0.26 9 0.008 –173 0.945 168
1350 0.972 166 0.25 8 0.009 –178 0.946 167
1400 0.969 166 0.24 7 0.011 175 0.947 167
1450 0.965 165 0.22 6 0.012 172 0.948 167
1500 0.959 164 0.21 5 0.013 169 0.950 167

MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1


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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

Table 2. Common Source S–Parameters (VDS = 28 V)

ID = 2.0 A
f S11 S21 S12 S22
MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
20 0.912 –170 16.01 84 0.016 –12 0.746 178
30 0.917 –173 13.73 82 0.015 –15 0.755 177
40 0.918 –174 12.02 80 0.014 –17 0.759 177
50 0.919 –176 10.62 78 0.013 –20 0.766 176
100 0.922 –178 6.76 71 0.012 –22 0.775 176
150 0.930 177 4.92 65 0.011 –25 0.791 176
200 0.931 176 3.82 60 0.010 –27 0.791 176
250 0.933 175 3.07 55 0.009 –29 0.793 176
300 0.941 174 2.53 51 0.009 –31 0.826 176
350 0.943 173 2.14 45 0.008 –35 0.834 176
400 0.945 172 1.83 41 0.008 –45 0.853 176
450 0.948 172 1.58 38 0.007 –52 0.858 176
500 0.950 172 1.39 35 0.007 –57 0.865 176
550 0.955 172 1.24 32 0.007 –61 0.876 176
600 0.960 172 1.10 29 0.006 –64 0.882 176
650 0.965 171 0.96 26 0.006 –68 0.888 175
700 0.967 171 0.89 24 0.006 –71 0.894 175
750 0.970 171 0.80 20 0.005 –73 0.904 175
800 0.973 170 0.73 18 0.005 –78 0.906 175
850 0.974 169 0.66 17 0.004 –83 0.908 174
ARCHIVED 2005

900 0.975 169 0.61 13 0.004 –91 0.909 173


950 0.976 169 0.57 12 0.004 –94 0.915 173
1000 0.978 168 0.52 11 0.004 –96 0.916 173
1050 0.979 168 0.47 9 0.005 –102 0.919 172
1100 0.980 168 0.43 7 0.005 –115 0.924 172
1150 0.980 167 0.41 6 0.006 –119 0.931 171
1200 0.979 167 0.38 5 0.006 –125 0.934 170
1250 0.978 167 0.36 2 0.006 –139 0.935 170
1300 0.974 167 0.34 1 0.007 –148 0.936 170
1350 0.971 166 0.32 0 0.007 –156 0.937 169
1400 0.970 165 0.31 –1 0.007 –165 0.938 169
1450 0.969 165 0.30 –2 0.008 –171 0.939 169
1500 0.965 164 0.27 –3 0.008 –178 0.946 169

MRF184R1 MRF184SR1 MOTOROLA RF DEVICE DATA


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NOTES
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MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1


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NOTES
ARCHIVED 2005

MRF184R1 MRF184SR1 MOTOROLA RF DEVICE DATA


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PACKAGE DIMENSIONS

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MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1


11
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ARCHIVED 2005

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,
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respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

E Motorola, Inc. 2002.

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MRF184R1 MRF184SR1 MOTOROLA RF DEVICE DATA


12 ◊ MRF184/D
Archived 2005

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