The RF Mosfet Line N-Channel Enhancement-Mode Lateral Mosfets
The RF Mosfet Line N-Channel Enhancement-Mode Lateral Mosfets
The RF Mosfet Line N-Channel Enhancement-Mode Lateral Mosfets
2005
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SEMICONDUCTOR TECHNICAL DATA by MRF184/D
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 65 Vdc
Gate–Source Voltage VGS ±20 Vdc
Drain Current — Continuous ID 7 Adc
Total Device Dissipation @ TC = 70°C PD 118 Watts
Derate above 70°C 0.9 W/°C
Storage Temperature Range Tstg – 65 to +150 °C
Operating Junction Temperature TJ 200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.1 °C/W
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage V(BR)DSS 65 – – Vdc
(VGS = 0 Vdc, ID = 1 mAdc)
Zero Gate Voltage Drain Current IDSS – – 1 µAdc
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current IGSS – – 1 µAdc
(VGS = 20 Vd, VDS = 0 Vdc)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 10
MOTOROLA
Motorola, RF DEVICE DATA
Inc. 2002
MRF184R1 MRF184SR1
1
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss – 83 – pF
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Output Capacitance Coss – 44 – pF
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance Crss – 4.3 – pF
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain Gps 11.5 13.5 – dB
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Drain Efficiency η 53 60 – %
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Load Mismatch ψ
(VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz, No Degradation in Output Power
ARCHIVED 2005
TYPICAL CHARACTERISTICS
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ARCHIVED 2005
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ARCHIVED 2005
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ID = 2.0 A
S11 S21 S12 S22
f
MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
20 0.916 179 10.88 80 0.014 –22 0.843 175
30 0.917 178 9.26 79 0.014 –25 0.847 174
40 0.918 177 8.10 78 0.015 –29 0.852 174
50 0.919 176 7.16 77 0.015 –33 0.853 174
100 0.919 175 4.57 75 0.015 –35 0.855 173
150 0.920 174 3.34 67 0.015 –38 0.865 173
200 0.921 173 2.60 62 0.014 –41 0.867 173
250 0.922 173 2.11 59 0.014 –45 0.877 173
300 0.928 172 1.77 55 0.014 –49 0.881 173
350 0.938 172 1.50 50 0.013 –55 0.887 173
400 0.941 171 1.28 47 0.013 –59 0.895 173
450 0.942 171 1.12 44 0.012 –62 0.896 173
500 0.943 171 1.00 41 0.012 –68 0.898 172
550 0.945 171 0.91 38 0.010 –75 0.899 172
600 0.947 171 0.80 35 0.010 –79 0.903 172
650 0.948 171 0.71 33 0.009 –85 0.905 172
700 0.955 170 0.65 30 0.008 –88 0.909 172
750 0.959 170 0.60 28 0.008 –95 0.919 172
800 0.962 169 0.55 25 0.007 –102 0.922 172
850 0.963 169 0.50 23 0.007 –111 0.923 171
ARCHIVED 2005
ID = 2.0 A
f S11 S21 S12 S22
MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
20 0.912 –170 16.01 84 0.016 –12 0.746 178
30 0.917 –173 13.73 82 0.015 –15 0.755 177
40 0.918 –174 12.02 80 0.014 –17 0.759 177
50 0.919 –176 10.62 78 0.013 –20 0.766 176
100 0.922 –178 6.76 71 0.012 –22 0.775 176
150 0.930 177 4.92 65 0.011 –25 0.791 176
200 0.931 176 3.82 60 0.010 –27 0.791 176
250 0.933 175 3.07 55 0.009 –29 0.793 176
300 0.941 174 2.53 51 0.009 –31 0.826 176
350 0.943 173 2.14 45 0.008 –35 0.834 176
400 0.945 172 1.83 41 0.008 –45 0.853 176
450 0.948 172 1.58 38 0.007 –52 0.858 176
500 0.950 172 1.39 35 0.007 –57 0.865 176
550 0.955 172 1.24 32 0.007 –61 0.876 176
600 0.960 172 1.10 29 0.006 –64 0.882 176
650 0.965 171 0.96 26 0.006 –68 0.888 175
700 0.967 171 0.89 24 0.006 –71 0.894 175
750 0.970 171 0.80 20 0.005 –73 0.904 175
800 0.973 170 0.73 18 0.005 –78 0.906 175
850 0.974 169 0.66 17 0.004 –83 0.908 174
ARCHIVED 2005
NOTES
ARCHIVED 2005
NOTES
ARCHIVED 2005
PACKAGE DIMENSIONS
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ARCHIVED 2005
2 INCHES MILLIMETERS
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MRF184SR1
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