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    2N3713 2N3715 2N3714 2N3716 Silicon NPN Transistors Description

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    Carlos Moreno
    The document describes four silicon NPN power transistors (2N3713, 2N3714, 2N3715, 2N3716) manufactured by Central Semiconductor. The transistors are mounted in hermetically sealed metal packages designed for medium speed switching and amplifier applications. Electrical characteristics and maximum ratings are provided for the transistors, including collector-emitter voltage, continuous collector current, power dissipation, and more. Central Semiconductor provides support services for product design and applications.

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    2N3713 2N3715 2N3714 2N3716 Silicon NPN Transistors Description

    Uploaded by

    Carlos Moreno
    38 views3 pages
    The document describes four silicon NPN power transistors (2N3713, 2N3714, 2N3715, 2N3716) manufactured by Central Semiconductor. The transistors are mounted in hermetically sealed metal packages designed for medium speed switching and amplifier applications. Electrical characteristics and maximum ratings are provided for the transistors, including collector-emitter voltage, continuous collector current, power dissipation, and more. Central Semiconductor provides support services for product design and applications.

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    Datasheet

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    2N3713-3716

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    The document describes four silicon NPN power transistors (2N3713, 2N3714, 2N3715, 2N3716) manufactured by Central Semiconductor. The transistors are mounted in hermetically sealed metal packages designed for medium speed switching and amplifier applications. Electrical characteristics and maximum ratings are provided for the transistors, including collector-emitter voltage, continuous collector current, power dissipation, and more. Central Semiconductor provides support services for product design and applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    38 views3 pages

    2N3713 2N3715 2N3714 2N3716 Silicon NPN Transistors Description

    Uploaded by

    Carlos Moreno
    The document describes four silicon NPN power transistors (2N3713, 2N3714, 2N3715, 2N3716) manufactured by Central Semiconductor. The transistors are mounted in hermetically sealed metal packages designed for medium speed switching and amplifier applications. Electrical characteristics and maximum ratings are provided for the transistors, including collector-emitter voltage, continuous collector current, power dissipation, and more. Central Semiconductor provides support services for product design and applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    2N3713 2N3715

    2N3714 2N3716
    w w w. c e n t r a l s e m i . c o m
    SILICON DESCRIPTION:
    NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3713, 2N3714,
    2N3715, and 2N3716 are silicon NPN power transistors
    manufactured by the epitaxial-base process, mounted
    in a hermetically sealed metal package designed for
    medium speed switching and amplifier applications.

    MARKING: FULL PART NUMBER

    TO-3 CASE

    MAXIMUM RATINGS: (TC=25°C) 2N3713 2N3714


    SYMBOL 2N3715 2N3716 UNITS
    Collector-Base Voltage VCBO 80 100 V
    Collector-Emitter Voltage VCEO 60 80 V
    Emitter-Base Voltage VEBO 7.0 V
    Continuous Collector Current IC 10 A
    Continuous Base Current IB 4.0 A
    Power Dissipation PD 150 W
    Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
    Thermal Resistance JC 1.17 °C/W

    ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)


    SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
    ICEV VCE=Rated VCBO, VBE=1.5V 1.0 mA
    ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C 10 mA
    IEBO VEB=7.0V 5.0 mA
    BVCEO IC=200mA (2N3713, 2N3715) 60 V
    BVCEO IC=200mA (2N3714, 2N3716) 80 V
    VCE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) 1.0 V
    VCE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) 0.8 V
    VBE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) 2.0 V
    VBE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) 1.5 V
    VBE(ON) VCE=2.0V, IC=3.0A 1.5 V
    hFE VCE=2.0V, IC=1.0A (2N3713, 2N3714) 40 120
    hFE VCE=2.0V, IC=1.0A (2N3715, 2N3716) 50 150
    hFE VCE=2.0V, IC=3.0A (2N3713, 2N3714) 15
    hFE VCE=2.0V, IC=3.0A (2N3715, 2N3716) 30
    fT VCE=10V, IC=0.5A, f=1.0MHz 4.0 MHz
    tr IC=5.0A, IB1=IB2=0.5A 0.4 μs
    ts IC=5.0A, IB1=IB2=0.5A 0.3 μs
    tf IC=5.0A, IB1=IB2=0.5A 0.4 μs
    R2 (18-June 2013)
    2N3713 2N3715
    2N3714 2N3716

    SILICON
    NPN TRANSISTORS

    TO-3 CASE - MECHANICAL OUTLINE

    R2
    LEAD CODE:
    1) Base
    2) Emitter
    Case) Collector

    MARKING:
    FULL PART NUMBER

    R2 (18-June 2013)
    w w w. c e n t r a l s e m i . c o m
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    145 Adams Avenue Worldwide Field Representatives:
    Hauppauge, NY 11788 USA www.centralsemi.com/wwreps
    Main Tel: (631) 435-1110
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    For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
    which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms

    w w w. c e n t r a l s e m i . c o m

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