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I-V CHARACTERISTICS OF SEMICONDUCTOR DIODE

Article · May 2020

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Papers in English 42
Humanities 42
Section 1. Local history 42
THE IMPACT OF PESTICIDES ON BIODIVERSITY AND AN 42
ENVIRONMENT: HOW DO PESTICIDES INFLUENCE ON THE
ENVIRONMENT AND BIODIVERSITY LOSS IN AKTOBE REGION?
Kamilla Zhumabay
Azat Zhaulbaev
Section 2. Linguistics 45
THE EMERGENCY OF CASE-STUDY METHOD IN TEACHING AND ITS 45
CONCEPTS
Fariza Avezova
Section 3. Pedagogy 48
DIFFERENCE IN EDUCATION SYSTEMS OF KAZAKHSTAN AND USA 48
Abylay Muratkaliyev
INTERNET RESOURCE AS A TOOL OF DEVELOPING AUDITORY SKILLS 52
IN THE PROFESSIONAL SPHERE OF TEACHER
Zhibek Kaisar
IMPORTANT PROBLEMS OF TEACHING RUSSIAN OF STUDENTS 55
WITH SPEECH DISORDERS AND THEIR POSSIBLE SOLUTIONS
Малащенко Виталия Витальевна
METHODS AND TECHNIQUES FOR THE DEVELOPMENT 59
OF SPEECH YOUNGER STUDENTS IN THE CLASSROOM AND IN
EXTRACURRICULAR ACTIVITIES
V. Olshanskaya
Section 4. Psychology 63
TESTING AND IMPLEMENTING THE “RIGHT” SLEEPING MODES 63
FOR HIGH SCHOOL STUDENTS
Nurdaulet Taumergenov
Section 5. Philology 69
TEACHING THE ENGLISH LANGUAGE TO STUDENTS WITH SAFE 69
INTELLECT AT HOME: APPROACHES
Albina Seidakhmetova
Natural and medical science 72
Section 6. Biological sciences 72
TAP WATER: THE POOR QUALITY AND HOW TO MAKE 72
IT APPROPRIATE TO DRINK
Medina Dyussembina
Section 7. Physical science 77
I-V CHARACTERISTICS OF SEMICONDUCTOR DIODE 77
Gulomov Jasurbek
Azimov Sarvar
Irodakhon Madaminova
Hayrullo Aslonov
Odilbek Dehqonboyev
Section 8. Medical science 81
MORBIDITY STRUCTURE IN THE REPUBLIC OF MOLDOVA 81
AND THE CHARACTERISTIC OF THE MAIN CLASSES OF DISEASES
Mariana Zgherea
Журнал «Студенческий вестник» № 16 (114), часть 9, 2020 г.

SECTION 7.

PHYSICAL SCIENCE

I-V CHARACTERISTICS OF SEMICONDUCTOR DIODE

Gulomov Jasurbek
student, Andijan state university,
Uzbekistan, Andijan

Azimov Sarvar
student, Andijan machine building institute,
Uzbekistan, Andijan

Irodakhon Madaminova
student, Andijan state university,
Uzbekistan, Andijan

Hayrullo Aslonov
student, Andijan state university,
Uzbekistan, Andijan

Odilbek Dehqonboyev
student, Andijan state university,
Uzbekistan, Andijan

ABSTRACT
In this article, describe I-V characteristics of semiconductor diode and distribution of electron
and hole currents in diode. Besides, check to behave diode in variously temperatures and create I-V
graphs them.
Keywords: hole, electron, current density, model, p-n junction

Today, semiconductor devices are used in all industries. The simplest of these is the p-n junc-
tion diode. A diode is a nonlinear device within a device. That is, the relationship between current
and voltage is not linear. Conventional special semiconductors are generally not used for any pur-
pose because of their dielectric properties. When we put a donor or acceptor in it, it starts to act like
a conductor. A diode is mainly used to convert alternating current to direct current. This is because
it is a one-way street. Electrons and holes are mainly involved in the transmission of electricity in a
diode. The distribution of electrons (Fig. 1) and cavities (Fig. 2) inside the diode, that is, the current
densities they produce, are different because there are more electrons than holes.

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Журнал «Студенческий вестник» № 16 (114), часть 9, 2020 г.

z
Figure 1. Distribution of the absolute value of the current density generated by electrons inside
the diode

As we can see above, the electron is moving from the negative to the positive.

Figure 2. Distribution of the absolute value of the current density generated by the holes inside
the diode

The holes move from the positive to the negative. We can theoretically determine the volt-
ampere characteristic of a simple diode with p-n junction by formula 1 [1].
 nkT
Uq

I  I 0  e  1 (1)
 
Here:
I0 is the reverse current
n is the ideal coefficient, which is n = 2 in silicon-based diodes [2].
T is temperature.
 D Dp 
I 0  qAni2  n   (2)
 Ln N A Lp N D 
Here:
ni is the concentration of intrinsic charge carriers
Ln and Lp are the diffusion lengths of the electrons and holes

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Журнал «Студенческий вестник» № 16 (114), часть 9, 2020 г.

Dn and Dp are the diffusion coefficients of electrons and holes


NA and ND are acceptor and donor concentrations
Ideally, the volt-ampere characteristic of a diode is exponential, but when determined by nu-
merical methods, it is similar to Figure 1. In this case, 1 represents the relationship between the
voltage and the total current density, 2 the voltage and the current density generated by the cells,
and 3 the current and the voltage generated by the electrons. All of the results obtained were mod-
eled using the Sentaurus TCAD, which works using numerical methods. There are many such pro-
grams today. Historically, science has been divided into experience and theory. And now a third
modeling has been added. Modeling helps us greatly in reducing the number of experiments and
increasing work productivity. We know that experiments in semiconductor physics are expensive
and time consuming. I think that time, progress and technology should serve the development of
science.

Graph 1. Volt-ampere characteristic of a diode

In addition, the effect of temperature on the volt-ampere characteristics of the diode is very
significant. This is mainly due to the fact that the concentration of private carriers is very sensitive
to changes in temperature. That is, as the temperature rises, so does the temperature. This increases
its permeability and decreases its resistance. This distinguishes semiconductors from metals. For
example, we can see from Equation 3 that the charge of a intrinsic carrier concentration depends on
its temperature [3].
 Eg
ni  5.2 1015 T 3/2 exp electrons / cm3
2kT
ni (T  300 K )  1.08 1010 electrons / cm3 (3)
0

ni (T  6000 K )  1.54 1015 electrons / cm3

This means that the concentration of specific charge carriers in silicon increases 100,000
times as the temperature doubles. This means that semiconductors are very sensitive to temperature.
If we look at Figure 2, we can see that we can also use a diode as a temperature sensor. In
short, the volt-ampere characteristic of a p-n junction diode is strongly related to the doping concen-
tration and temperature. I think a lot of devices are still being invented using the p-n junction mech-
anism. I can give examples of these, transistors and solar cells. Semiconductor devices is our fea-
ture. Even the most complex things are made of the simplest things. Just like chips are made from
diodes.

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Журнал «Студенческий вестник» № 16 (114), часть 9, 2020 г.

Figure 2. Volt-ampere characteristics of a silicon-based diode at different temperatures

References:
1. Anderson and Anderson McGraw-Hill, “Fundametals of semiconductor devices”, 2016
2. M. Bashahu, P. Nkundabakura, "Review and tests of methods for the determination of the solar
cell junction ideality factors", Solar Energy, vol. 81, pp. 856-863, July 2007.
3. J. Roulston, An Introduction to the Physics of Semiconductor Devices, vol. 1 , Oxford Universi-
ty Press, 1999

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