Cse Labreport-1

East West University
Department of CSE
LAB REPORT
Course Name
Electronic Circuit
Course Code
CSE251
Experiment no: 01
Experiment name:
I-V Characteristic of diode
Semester and Year:

Spring 2023
Name of Student & Id: Course Instructor information:
MD. Sakibur Rahman Dr. Shekh Md Mahmudul Islam

(2021-3-60-057) Assistant Professor
Department of Department of
Computer Science and Engineering Electrical and Electronics Engineering
Date of Report Submission:

16 March 2023
ABSTRACT
From the experiment, we know how we can use diode. As we saw, the relation between Voltage and
current in a pn junction diode and resistor, therefore we know how diode works . With the knowledge of
this experiment, we will be able to draw the circuit of diode and resistor circuits also we can determine the
I-V Characteristic of any pn junction base circuit by doing this experiment.
OBJECTIVE
• Have a working understanding of circuit variables and circuit components.

• Be familiar with diode and how to determine pn junction current.
• Learn about resistors and diode.
• How to use a multimeter to measure a resistor and diode.
• To confirm I-V Characteristic.
THEORY AND EXPERIMENTAL METHODS
A diode is a bi-polar device that behaves as the short circuit when it is in forward bias and as an open
circuit when it is in reverse bias condition.
Figure-1: Schematic Diagram of diode Figure-2: P-N Junction Diode
There are two types of biasing condition for a diode:
1. When the diode is connected across a voltage source with positive polarity of source
connected toP side of diode and negative polarity to N side, then the diode is in forward bias
condition.
2. When the diode is connected across a voltage source with positive polarity of source
connected toN side of diode and negative polarity to P side, then the diode is in reverse bias
condition.
Figure-3: Forward Bias Connection Figure-4: Reverse Bias Connection

If the input voltage is varied and the current through the diode corresponding to each voltageare taken,
the plot of diode current (Id) VS diode voltage (VD) will be follows:
Figure-5: I-V Characteristic of diode
At the reverse bias condition, the amount of current flows through the diode is very small (at
microampererange). But if the voltage continuously increases in reverse direction, at a certain value the
diode will break down and huge amount of current will flow in reverse direction. This is called
breakdown of diode.In the laboratory the breakdown will not be tested because it will damage the diode
permanently.
From the characteristics curve, a particular forward bias voltage (VT) is required toreach the region of
upward swing. This voltage, VT is called the cut-in voltage or threshold voltage ofdiode. For Si diode
the typical value of threshold voltage is 0.7 volt and for Ge diode is 0.3 volt.
REPORT
Question-1: Taking readings from the data table, draw Id vs Vd curve of the diode in a graph paper with
proper scale [x-axis: 0.2 V per unit, y-axis: any suitable range].
Answer-1:
Question-2: What is the dynamic and static resistance of a diode?
Answer-2: An AC source that depends on the DC polar station of the PN junction diode is connected to it is
called dynamic diode. It is basically to measure the resistance in a nonlinear device. Dynamic resistance is a
function of the current through the material for a non-ohmic conductor. Dynamic resistance is used to
measure the resistance in the p-n junction.
Rd= ∇Vd / ∇Id
Resistance offered by a p-n junction diode when connected to a DC circuit is called static resistance. In static
resistance the resistance has no need to change in terms of time. The charge carries fast in forward direction.
Rd= vd/Id
Question-3: From the graph, find Vd for corresponding values of Id = 5 mA and Id = 10 mA and calculate the
static Resistance.
Answer-3: Here,
Id = 5 mA
Id = 10 mA
static resistance, Rd = Vd / Id
= (0.56 / 5) ohm
= 112.2 ohm
when Id = 10mA
Vd = 0.6 V
We Know,
Rd = Vd / Id
= 0.6 / 10
= 60 ohm
Question-4: Considering Vdc = 2 volt, find the load line (Showing all the calculations).
Answer-4:
Here,
Vdc = 2
Applying KVL,
Vdc - Vd - IdRL = 0
Or,
Vdc = Vd + IdRL
If Vd = 0; then V= 0 + IdRL
Or,
Id = V / RL
If Id = 0; then V= 0 + Vd
Or,
V = Vd
When,
Vdc = 2V
we know,
Id = VDC/R
= (2 / 1000) A
= 2 mA Vd
= 2V
when Id = 0
load line are (0,2) and (2,0).
Question-5: Draw the load line in the Id vs Vd curve of diode and find the Q-point.
Answer-5:
RESULT
After comparing the theoretical & measured values we found that there are some minor changes between the
measured value and theoretical value.
CONCLUSIONS
In this experiment we learn how to measure Voltage, Current of diode and resistor with multi-range meter.
We also learn to determine I-V Characteristics of diode. While doing this lab the readings were taken very
carefully and to prevent short circuits the circuit was also designed very carefully.
VIGILANCE
The circuit is made very carefully and tried to do with the least error. The data entry and graph draw part
also have been done with care.

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East West University

Semester and Year:

Name of Student & Id: Course Instructor information:

MD. Sakibur Rahman Dr. Shekh Md Mahmudul Islam

Date of Report Submission:

• Have a working understanding of circuit variables and circuit components.

THEORY AND EXPERIMENTAL METHODS

Figure-1: Schematic Diagram of diode Figure-2: P-N Junction Diode

There are two types of biasing condition for a diode:

Figure-3: Forward Bias Connection Figure-4: Reverse Bias Connection

Figure-5: I-V Characteristic of diode

Question-2: What is the dynamic and static resistance of a diode?

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