MEHRAN UNIVERSITY OF ENGINEERING AND TECHNOLOGY

S.Z.A.B CAMPUS KHAIRPUR MIR’S

Student’s Roll No: ___________________ Score: _________________________

Diode Action
OBJECTIVES:
Upon successful completion of this experiment, the students will be able to:
• Investigate the schematic of Diode
• Describe diode operating characteristics
• Identify diode construction characteristics
• Observe normal operation in diode
EXPERIMENT EQUIPMENTS REQUIRED
• NIDA Test Console 130E
• PC130-22A
• Oscilloscope
• Function Generator
• Multimeter

What is a Diode?
A diode is defined as a two-terminal electronic component that only conducts current in one
direction (so long as it is operated within a specified voltage level). An ideal diode will have
zero resistance in one direction, and infinite resistance in the reverse direction.
Semiconductor diodes are the most common type of diode. These diodes begin conducting
electricity only if a certain threshold voltage is present in the forward direction (i.e. the “low
resistance” direction). The diode is said to be “forward biased” when conducting current in this
direction. When connected within a circuit in the reverse direction (i.e. the “high resistance”
direction), the diode is said to be “reverse biased”.
The diode is said to be “forward biased” when conducting current in this direction. When
connected within a circuit in the reverse direction (i.e. the “high resistance” direction), the diode
is said to be “reverse biased”.

Diode Symbol
The symbol of a diode is shown below.
The arrowhead points in the direction of
conventional current flow in the forward
biased condition. That means the anode
is connected to the p side and the
cathode is connected to the n side.

Figure 2.1 diode symbol

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 MEHRAN UNIVERSITY OF ENGINEERING AND TECHNOLOGY
S.Z.A.B CAMPUS KHAIRPUR MIR’S
Department of Electronic Engineering
2nd Semester 1st Year
Subject: Basic Electronics Lab Experiment # 02

Types of Diode:

There are two types of PN junction diode, i) silicon diode ii) Germanium diode and the way
to change the electrical properties of germanium and silicon is to introduce chemical elements
called dopants. Since a diode acts as a one-way valve for the flow of electrical current, there
must be a voltage differential applied to the two halves of the diode, and it must be applied
in the correct regions. In practical terms, this means that the positive pole of a power source
must be applied to the wire going to the P-type material, while the negative pole must be
applied to the N-type material for the diode to conduct electricity. When power is applied
properly to a diode, and the diode is conducting electric current, the diode is said to be
forward-biased. When the negative and positive poles of a power source are applied to the
opposite-polarity materials of a diode – positive pole to N-type material and negative pole to
P-type material – a diode does not conduct electric current, a condition known as reverse-
bias.

The Difference between Germanium and Silicon

The chief difference between germanium and silicon diodes is the voltage at which electric
current begins to flow freely across the diode. A germanium diode typically begins to conduct
electric current when voltage properly applied across the diode reaches 0.3 volts. Silicon
diodes require more voltage to conduct current; it takes 0.7 volts to create a forward-bias
situation in a silicon diode.

EXPERIMENT:

In this experiment,you will investigate effects of forward and reverse biason diodes. You will
verify the difference between silicon and germenium diodes in a DC series circuit, you will
measure PC130-22A circuit voltage and diode resistance from your measurement, you will
verify diode operating characterisitics and how learn how to check suspected fault diodes.

EQUIPMENT REQUIRED :

Test console
PC-130-22A
Analog multimeter

PREPARATION:

Examine PC-130-22A. Notice that the board conatins four separate diode circuits selecteble
by the slide switchs. Switch S5 routes the input voltage to the four diodes circuit and is
measured on TP6

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 MEHRAN UNIVERSITY OF ENGINEERING AND TECHNOLOGY
S.Z.A.B CAMPUS KHAIRPUR MIR’S
Department of Electronic Engineering
2nd Semester 1st Year
Subject: Basic Electronics Lab Experiment # 02

Figure 2.2 PC 130-22A schematic

PROCEDURE:
1. Set the test console’s NEGATIVE SUPPLY control to 12 and insert PC130-22A into
the PC connectors. Set pc switches S5 left and S1 through S4 up (closed ) to establish
the circuits of figures 2.3 through 2.6.
2. For figures 2.2 and 2.3, determine the theoretical coltages drop in the EQUIVALENT
SWITCH CIRCUIT diagrams. Records the results next to the switch and resistor in
figure 2 and 3.
3. Measure the DC input voltage on TP6. Using a miltimeter . measure the voltages across
the R1,R2,D1 and D2, using the multimeter. Records the results in the blanks on figures
2.2 and 2.3. compare calculated and measured values.
4. Look at the voltage drops across the resisitor and diodes in figure 2.5 and 2.6. Notice
that D1 and D2 are reverse biased (negative voltage applied to the anode). The circuit
act as if the diodes are OPEN; there is no current flow with the applied voltage being
measured across the diodes. A reverse biased diode acts as an open switch, as illustrated
in the equivalent circuit.

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 MEHRAN UNIVERSITY OF ENGINEERING AND TECHNOLOGY
S.Z.A.B CAMPUS KHAIRPUR MIR’S
Department of Electronic Engineering
2nd Semester 1st Year
Subject: Basic Electronics Lab Experiment # 02

Figure 2.3 circuit connection for circuit A (Silicon diode reverse biased)

5. Firgures 2.5 and 2.6, determine the theoretical voltages drop in the equivalent switch
circuit diagram. Records the result on figure 2.5 and 2.6 compare calculated and
measured values.
6. Set the S5 to right. This disconnects the applied voltage. Set PC switches s1 throught
S4 (down).

Figure 2.4 circuit connection for circuit B (Germinium diode reverse biased)

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 MEHRAN UNIVERSITY OF ENGINEERING AND TECHNOLOGY
S.Z.A.B CAMPUS KHAIRPUR MIR’S
Department of Electronic Engineering
2nd Semester 1st Year
Subject: Basic Electronics Lab Experiment # 02

Look ate the voltage drop across the resistor and diode in figure 2.5 and 2.6 (forward biased
diodes ) notice that D3 has a voltage drop of approximately 0.7 V-D3 is silicon diode. Notice
that D4 has a drop voltage of approximately 0.3V-D4 is a germenium diodes these voltages
drops are important when the applied voltage is small , however , in most cases , the applied
voltage is not drop small , and the voltage drop aross the diode can be ignored.

Figure 2.5 circuit connection for circuit C (Silicon diode Forward biased)

Figure 2.6 circuit connection for circuit D (Germinium diode Forward biased)

• Measure all the given values and write in given blanks.

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 MEHRAN UNIVERSITY OF ENGINEERING AND TECHNOLOGY
S.Z.A.B CAMPUS KHAIRPUR MIR’S
Department of Electronic Engineering
2nd Semester 1st Year
Subject: Basic Electronics Lab Experiment # 02

Lab Exercise
1. Design the simple Diode circuit in MULTISIM software as you have seen on Card set, two
different materials diodes are used, use different types of diodes and observe its biasing
effects. Attach the circuit and results with the handout at the time of submission.

2. Explain the function of Diodes?

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3. Differentiate silicon and germanium diode and their applications?
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Conclusion:
Have you become familiar with diode actions as well as the effect on different types of diodes
used? What concepts did you gain from this experiment? Comment
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References:
• https://www.electrical4u.com/diode-working-principle-and-types-of-diode/
• https://www.britannica.com/technology/diode
• https://whatis.techtarget.com/definition/diode

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