Sri Venkateswara College of Engineering and Technology, Chittoor

(Autonomous)

Department of Electronics and Communication Engineering

ELECTRONIC DEVICES AND CIRCUITS LAB MANUAL

(17AEC07)

(II B.Tech -I Semester ECE)

ROLL NO: _______________________________________

NAME: __________________________________________

CLASS: __________________________________________
 ELECTRONIC DEVICES AND CIRCUITS LAB - 17AEC07
Objectives:
1. To understand the working of diode, transistors.
2. To understand the working of special purpose electronics devices.
3. To understand the working of a rectifier circuit with and without filters.
4.To understand the bandwidth calculations of an amplifier circuit.

Outcomes:
At the end of the course, the student should be able to:
1. Analyze CE, CB and CS amplifiers and its bandwidth calculation.
2. Calculate various parameters from the characteristics of various electronic devices.
3. Know the importance of Filters and its calculations.
4. Calculate the bandwidth of the BJT and FET in different configurations.

Electronic Workshop Practice:

1. Identification, Specifications, Testing of R, L, C Components (Color Codes),

Potentiometers, Coils, Gang Condensers, Relays, Bread Boards.
2. Identification, Specifications and Testing of active devices, Diodes, BJTs, JFETs,
LEDs, LCDs, SCR, UJT.
3. Soldering Practice- Simple circuits using active and passive components.
4. Study and operation of Ammeters, Voltmeters, Transformers, Analog and Digital
MultiMeter, Function Generator, Regulated Power Supply and CRO.

List of Experiments
Minimum of Ten Experiments need to be conducted
1. Study of CRO Operation and its Applications.
2. P-N Junction Diode Characteristics
3. Zener Diode Characteristics
i) V-I Characteristics
ii) Zener Diode act as a Voltage Regulator
4. Rectifiers (without and with filter)
i) Half-wave Rectifier
ii) Full-wave Rectifier

5. BJT Characteristics (CE Configuration)

i) Input Characteristics
ii) Output Characteristics
6. BJT Characteristics (CB Configuration)
 i) Input Characteristics
ii) Output Characteristics
7. FET Characteristics (CS Configuration)
i) Drain (Output) Characteristics
ii) Transfer Characteristics
8. SCR Characteristics.
9. UJT Characteristics.
10. LDR Characteristics.
11. LED Characteristics.
12. Transistor Biasing.
 Cycle- I
1. Study of CRO Operation and its Applications.

2. P-N Junction Diode Characteristics

3. Zener Diode Characteristics

4. Half-wave Rectifier & Full-wave Rectifier Rectifiers (without and with c-filter)

5. BJT Characteristics (CE Configuration)

Cycle- II

1. BJT Characteristics (CB Configuration)

2. FET Characteristics (CS Configuration)

3. UJT Characteristics.

4. LED Characteristics.

5. SCR Characteristics
 INDEX

S. No. Date Name of the Experiment Remarks

 ELECTRONIC WORKSHOP PRACTICE

1. Identification, Specifications, Testing of R, L, C Components (Color Codes), Potentiometers, Coils, Gang

Condensers, Relays, Bread Boards.
RESISTOR COLOR CODE
To read them, hold the resistor such that the tolerance band is on your right. The tolerance band is
usually gold or silver in color and is placed a little further away from the other bands.

Starting from your left note all the colors of the bands and write them down in sequence. Next, use the
table given below to see which digits they represent. The band just next to the tolerance band is the
multiplier band. So if the color of this band is Red (representing 2), the value given is 102.
CAPACITORS

CERAMIC CAPACITOR
Below is a very useful chart for calculation the right value of Ceramic / Non – Polarized Capacitors.
There are special codes and marking on capacitor, which tell about the value of capacitor.

Example:
Here is the Capacitor marking is “105”
It’s mean that = 10 + 5 Zeros = 1,000,000 pF
= 1000 nF = 1 µF

ELECTROLYTIC CAPACITOR

The Electrolytic Capacitors have polarity. Meaning they have a positive and negative pin. The pin which
is long is the positive pin and the pin which is short is the negative pin. You can also identify the polarity
using the negative strip on the capacitor label.
POTENTIOMETERS

A potentiometer is a three-terminal resistor with a sliding or rotating contact that forms an

adjustable voltage divider. If only two terminals are used, one end and the wiper, it acts as a variable
resistor or rheostat.

BREADBOARD
A breadboard is a solderless device for temporary prototype with electronics and test circuit designs.
Most electronic components in electronic circuits can be interconnected by inserting their leads or
terminals into the holes and then making connections through wires where appropriate.

BREAD BOARD LAYOUT :

SAMPLE CONNECTION
2. Identification, Specifications and Testing of active devices, Diodes, BJTs, JFETs, LEDs, LCDs, SCR,
UJT.

DIODE

TRANSISTOR
BJT – BIPOLAR JUNCTION TRANSISTOR

BC107 BOTTOM VIEW OF BJT

JFET – JUNCTION FIELD EFFECT TRANSISTOR

LED – LIGHT EMITTING DIODE

SCR – SILICON CONTROL RECTIFIER

UJT - UNI JUNCTION TRANSISTOR
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
====================================================================
STUDY OF CRO OPERATION AND ITS APPLICATIONS

AIM:

To observe front panel control knobs and to find amplitude, time period and frequency for given
waveforms.

APPARATUS:

1. CRO --------------- 1No.

2. Function generator --------------- 1No.
3. CRO Probes --------------- 1No.

THEORY:

C.R.O. (Cathode Ray Oscilloscope) is the instrument which is used to observe signal waveforms. Signals
are displayed in time domain i.e. variation in amplitude of the signal with respect to time is plotted on the
CRO screen. X-axis represents time and Y-axis represents amplitude. It is used to measure amplitude,
frequency and phase of the waveforms. It is also used to observe shape of the waveform.

It helps us to find out gain of amplifier, test oscillator circuits. We can measure amplitude and frequency
of the waveforms at the different test points in our circuit. Thus, it helps us for fault finding procedure. In
dual channel C.R.O, X-Y mode is available which is used to create Lissajous patterns.

Latest digital storage oscilloscope display voltage and frequency directly on the LCD and does not
require any calculations. It can also store waveform for further analysis.

Page 1
MODEL GRAPHS:
Sinusoidal Signal:

Amplitude in Volts

Time in ms

Time Period

Traingular Signal:

Amplitude in Volts

Time in ms

Time period

Square Signal:
Amplitude in Volts

Time in ms

Time period

Page 2
PROCEDURE:

1. Understand the significance of each and every knob on the CRO.

2. From the given function generator feed in a sinusoidal wave and adjust the time base
knob and the amplitude knob to observe the waveform as a function of time.

3. Measure the time period and amplitude (peak to peak) of the signal. Find the frequency
and verify if the same frequency is given from the function generator.

4. Repeat the above steps for square and triangular waveforms.

5. Report the readings and take the waveforms.

APPLICATIONS OF CRO:

1. Measurement of current

2. Measurement of voltage

3. Measurement of power

4. Measurement of frequency

5. Measurement of phase angle

6. To see transistor curves

7. To trace and measuring signals of RF, IF and AF in radio and TV.

8. To trace visual display of sine waves.

Page 3
CALCULATIONS:

Sinusoidal Signal:

Amplitude =

Time Period =.

Frequency =

Triangular Signal:

Amplitude =

Time Period =.

Frequency =

Square Signal:

Amplitude =

Time Period =.

Frequency =

Page 4
RESULT:

Thus the waveforms are observed and amplitude, time period and frequency are calculated.

Page 5
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
====================================================================
PN JUNCTION DIODE CHARACTERISTICS
AIM:

To verify the V-I Characteristics of given P-N Junction diode in Forward and Reverse bias and also to
find the Cut-in Voltage, Static Resistance and Dynamic Resistance in forward bias condition.

APPARATUS REQUIRED:

4. P-N Junction diode – 1N 4007 --------------- 1No.

5. Resistor – 1KΏ --------------- 1No.
6. Bread Board --------------- 1No.
7. Voltmeter (0-1V, 0-20V) --------------- 1No.
8. Ammeter (0-50mA, 0-250µA) --------------- 1No.
9. Regulated Power Supply (0-30V) ---------------- 1No.
10. Connecting wires (required as per circuit)

FORMULAE:

1. Static Resistance (Rs) =

2. Dynamic Resistance (RD) =

THEORY:

When the voltage is applied between the two terminals of the diode (anode and cathode) two possibilities
arises depending on polarity of DC supply.

[1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type material & -
Ve terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward biased.
The application of forward bias voltage will force electrons in N-type and holes in P-type material to
recombine with the ions near boundary and to flow crossing junction. This reduces width of depletion
region. This further will result in increase in majority carriers flow across the junction. If forward bias is
further increased in magnitude the depletion region width will continue to decrease, resulting in
exponential rise in current as shown in diode characteristic curve.

[2]Reverse-biased: If the negative terminal of battery (DC power supply) is connected with P-type
terminal of diode and +Ve terminal of battery connected to N type then diode is said to be reverse biased.
In this condition the free charge carriers (i.e. electrons in N-type and holes in P-type) will move away
from junction widening depletion region width. The minority carriers (i.e. –ve electrons in p-type and
+ve holes in n-type) can cross the depletion region resulting in minority carrier current flow called as
reverse saturation current(Is). As number of minority carrier is very small so the magnitude of Is is few
microamperes. Ideally current in reverse bias is zero.

Page 7
 CIRCUIT DIAGRAM:

FORWARD BIAS:

(0-50 mA)
1 KΩ
A

V
1N 4007 (0-1 V)
(0-30 V)

REVERSE BIAS:

1 KΩ (0-250 µA)

K
1N 4007 V (0-20 V)
(0-30 V)

Page 8
In short, current flows through diode in forward bias and does not flow through diode in reverse bias.
Diode can pass current only in one direction.

Knee Voltage:

It is defined as the forward voltage at which the current through the junction starts increasing rapidly. For
a Silicon diode it is 0.6V and for Germanium diode it is 0.2V.

Break Down Voltage (VBR):

It is defined as the reverse voltage at which PN junction breaks down with sudden increase in reverse
saturation current. This breakdown voltage depends on width of the depletion layer (i.e. Doping level).

Reverse Saturation Current (Is or Io):

This reverse saturation current is due to the flow of minority carriers across the junction when connected
in reverse bias configuration. It is of the order of microamperes for germanium and nanoamperes for
silicon.

PROCEDURE:

FORWARD BIAS:

1. Connections are made as per the circuit diagram.

2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is
connected to the cathode of the diode

3. Switch on the power supply and increases the input voltage (supply voltage) in steps.

4. Note down the corresponding current flowing through the diode and voltage across the diode
for each and every step of the input voltage.

5. The reading of voltage and current are tabulated.

6. Graph is plotted between voltage and current.

Page 9
MODEL GRAPH:

TABULAR COLUMN:

FORWARD BIAS:

Voltage across the diode Current through the diode in

S.No.
in Volts mA

Page 10
CALCULATIONS:

FORWARD BIAS:

1. Static Resistance =

2. Dynamic Resistance =

3. Cut-in Voltage =

REVERSE BIAS:

1. Connections are made as per the circuit diagram

2. For reverse bias, the RPS is connected to the cathode of the diode and RPS –ve is connected to the
anode of the diode.

3. Switch on the power supply and increase the input voltage (supply voltage) in steps

4. Note down the corresponding current flowing through the diode voltage across the diode for each and
every step of the input voltage.

5. The readings of voltage and current are tabulated

6. Graph is plotted between voltage and current.

Page 11
REVERSE BIAS:

Voltage across the diode Current through the diode in

S.No.
in Volts µA

Page 12
RESULT:

Thus the V–I characteristics of given PN junction diode is studied and the following parameters are
calculated from forward bias condition.

1. Cut-in voltage of the given diode =

2. Static resistance (RS) =

3. Dynamic Resistance (RD) =

Page 13
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
ZENER DIODE CHARACTERISTICS
AIM:

To verify the V-I Characteristics of given Zener diode and also to find the Cut-in Voltage, Zener
breakdown Voltage, Static Resistance and Dynamic Resistance.

APPARATUS REQUIRED:

1. Zener diode – 1N 3008 --------------- 1No.

2. Resistor – 1KΏ --------------- 1No.
3. Bread Board --------------- 1No.
4. Voltmeter (0-1V, 0-20V) --------------- 1No.
5. Ammeter (0-50mA, 0-250µA) --------------- 1No.
6. Regulated Power Supply (0-30V) ---------------- 1N0.
7. Connecting wires (required as per circuit)

FORMULAE:

1. Static Resistance (Rs) =

2. Dynamic Resistance (RD) =

THEORY:

A Zener diode is also called a voltage regulator or breakdown diode. The zener diode is a silicon PN
junction device, which differs from a rectifier diode, in the sense, that it is operated in the reverse break
down region. The breakdown voltage of a zener diode is set by carefully controlling the doping level
during manufacture. When a reverse voltage across a diode is increased, a critical voltage called
breakdown voltage is reached at which the reverse current increases sharply as shown in the model graph.

The reverse breakdown of a PN junction may occur either due to avalanche or zener effect. The
avalanche breakdown occurs, when the accelerated free electrons acquire sufficient energy to ionize a
lattice atom by bombardment. The additional free electrons, created in this way, are accelerated by the
reverse field causing more and more ionization. The multiplication of the number of free carriers causes
the reverse current to increase rapidly.

The zener diodes, with breakdown voltages of less than 6V, operate predominantly in zener breakdown.
Those with breakdown, voltages greater than 6V, operate predominantly in avalanche breakdown.

Page 15
 CIRCUIT DIAGRAM:

FORWARD BIAS:

1 KΩ (0-50 mA)

A
(0-30 V) V (0-1 V)
1N 3008

REVERSE BIAS:

1 KΩ (0-250 µA)

(0-30 V) 1N 3008 K
V (0-20 V)

Page 16
PROCEDURE:

FORWARD BIAS:

1. Connections are made as per the circuit diagram.

2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is
connected to the cathode of the diode

3. Switch on the power supply and increases the input voltage (supply voltage) in steps.

4. Note down the corresponding current flowing through the diode and voltage across the diode
for each and every step of the input voltage.

5. The reading of voltage and current are tabulated.

6. Graph is plotted between voltage and current.

REVERSE BIAS:

1. Connections are made as per the circuit diagram

2. For reverse bias, the RPS is connected to the cathode of the diode and RPS –ve is connected
to the anode of the diode.

3. Switch on the power supply and increase the input voltage (supply voltage) in steps

4. Note down the corresponding current flowing through the diode voltage across the diode for
each and every step of the input voltage.

5. The readings of voltage and current are tabulated

6. Graph is plotted between voltage and current.

Page 17
MODEL GRAPH:

TABULAR COLUMN:

FORWARD BIAS:

Voltage across the diode Current through the diode in

S.No.
in Volts mA

Page 18
CALCULATIONS:

FORWARD BIAS:

1. Static Resistance (Rs) =

2. Dynamic Resistance (RD) =

3. Cut in Voltage =

REVERSE BIAS:

1. Static Resistance (Rs) =

2. Dynamic Resistance (RD) =

3. Breakdown Voltage =

Page 19
REVERSE BIAS:

Voltage across the diode Current through the diode in

S.No.
in Volts µA

Page 20
RESULT:

Thus the V–I characteristics of given Zener diode is verified and the Breakdown voltage of the given
diode is calculated as _____________ from reverse bias condition.

Page 21
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
====================================================================
HALF WAVE RECTIFIER WITH AND WITHOUT FILTER

AIM:

To obtain the ripple factor and percentage of regulation of half wave rectifier with and without filter.

APPARATUS:

1. Transformer (230 V/ 12 V) --------------- 1No.

2. PN junction Diode (IN4007) --------------- 1No.
3. Bread Board --------------- 1No.
4. Multi Meter --------------- 1No.
5. Capacitor- 100 µF --------------- 1No.
6. Decade Resistor Box ---------------- 1N0.
7. CRO ---------------- 1N0.
8. Connecting wires (required as per circuit)

FORMULAE:

1. Ripple Factor =

2. % Regulation =

THEORY:

In half wave rectifier, rectifying element conducts only during positive half cycle of input a.c supply. The
negative half cycle of a.c supply are eliminated from the output.

This rectifier circuit consists of resistive load, rectifying element, i.e. p-n junction diode, and the source
of a.c voltage, all connected in series. The circuit diagram is shown in fig usually, the rectifier circuits are
operated from ac mains supply. To obtain the desired dc voltage across the load, the ac voltage is applied
to rectifier circuit using suitable step-up or step-down transformer, mostly a step-down one, with
necessary turns ratio.

The input voltage to the half-wave rectifier circuit shown in the fig is a sinusoidal ac voltage, having a
frequency which is the supply frequency, 50 Hz. Assume that, under reverse biased condition, the diode
acts almost as an open circuit, conducting no current.

Page 23
 CIRCUIT DIAGRAM:

WITHOUT FILTER:

1N 4007
A K
12 V

(0-20 V) (0-20 V) RL
230 V To CRO
AC Supply

0V

WITH FILTER:

1N 4007
A K

12 V

230 V (0-20 V) 100 µF RL To CRO

(0-20 V)
AC Supply

0V

Page 24
PROCEDURE:

1. Connections are made as per the circuit diagram

2. Switch on the supply and note down the reading of AC input voltage in secondary of
transformer and rectified DC voltage without connecting the load resistor (No load voltage).

3. Vary the load in convenient steps and note down DC & AC voltages

4. Connect the capacitor filter and repeat the step 3 for different values of load resistance

5. Calculate the ripple factor and % of regulation from the obtained readings

6. Draw the input and output waveforms of rectifier (with & without filter )

7. Draw the graph between

(i) a. Load resistance and ripple factor by using without filter
b. Load resistance and ripple factor by using with filter
(ii) a. Load resistance and % of regulation by using without filter.
b. Load resistance and % of regulation by using with filter

Page 25
 TABULAR COLUMN:

WITH FILTER:
VNL (No Load Voltage) =

Γ=
S.No. Vdc in Volts Vac in Volts RL in KΩ % Regulation =

WITHOUT FILTER:
VNL (No Load Voltage) =

Γ=
S.No. Vdc in Volts Vac in Volts RL in KΩ % Regulation =

Page 26
CALCULATIONS:

1. Ripple factor without filter is =

2. Ripple factor with filter is =

3. % of Regulation without filter is =

4. % of Regulation with filter is =

Page 27
MODEL GRAPH:

OUTPUT WITHOUT FILTER:

OUTPUT WITH FILTER:-

WITHOUT FILTER:
Ripple Factor

% Regulation

RL
RL

WITH FILTER:
Ripple Factor

% Regulation

RL
RL

Page 28
RESULT:

Thus the experiment on Half Wave Rectifier is completed and the following parameters are calculated.

1. Ripple factor Without filter is =

2. Ripple factor With filter is =
3. % of Regulation without filter is =
4. % of Regulation with filter is =

Page 29
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
FULL WAVE RECTIFIER WITH AND WITHOUT FILTER
AIM:

To obtain the ripple factor and percentage of regulation of center tapped full wave rectifier with and
without filter.

APPARATUS:

1. Transformer (230 V/ 12-0-12 V) --------------- 1No.

2. PN junction Diode (IN4007) --------------- 2No.
3. Bread Board --------------- 1No.
4. Multi Meter --------------- 1No.
5. Capacitor- 100 µF --------------- 1No.
6. Decade Resistor Box ---------------- 1N0.
7. CRO ---------------- 1N0.
8. Connecting wires (required as per circuit)

FORMULAE:

1. Ripple Factor =

2. % Regulation =

THEORY:

The circuit of a center-tapped full wave rectifier uses two diodes D1& D2. During positive half cycle of
secondary voltage (input voltage), the diode D1 is forward biased and D2is reverse biased.

The diode D1 conducts and current flows through load resistor RL. During negative half cycle, diode D2
becomes forward biased and D1 reverse biased. Now, D2 conducts and current flows through the load
resistor RL in the same direction. There is a continuous current flow through the load resistor R L, during
both the half cycles and will get unidirectional current as show in the model graph. The difference
between full wave and half wave rectification is that a full wave rectifier allows unidirectional (one way)
current to the load during the entire 360 degrees of the input signal and half-wave rectifier allows this
only during one half cycle (180 degree).

Page 31
 CIRCUIT DIAGRAM:

WITHOUT FILTER:
1N 4007
A
A K
12 V
D1

230 V 0V
AC Supply

RL
D2
12 V A K (0-20 V) (0-20 V) To CRO

WITH FILTER:

1N 4007
A
12 V A K

D1
0V
230 V
AC Supply

100 µF RL
D2
A K (0-20 V) (0-20 V) To CRO
12 V

Page 32
PROCEDURE:

1. Connect the Wires in circuit as shown in the figure

2. Switch on the supply and note down the reading of DC input voltage in secondary of
transformer and rectified DC voltage without connecting the load resistor

3. Vary the load in convenient steps and note down rectified DC&AC voltage

4. Connect the capacitor filter and repeat the step 3 for different values of load resistance

5. Calculate the ripple factor and % of regulation from the obtained readings

6. Draw the input and output waveforms of rectifier (with & without filter)

7. Draw the graph between

(i) a. Load resistance and ripple factor by using without filter
b. Load resistance and ripple factor by using with filter
(ii) a. Load resistance and % of regulation by using without filter.
b. Load resistance and % of regulation by using with filter

Page 33
 TABULAR COLUMN:

WITH FILTER:
VNL (No Load Voltage) =

Γ=
S.No. Vdc in Volts Vac in Volts RL in KΩ % Regulation =

WITHOUT FILTER:
VNL (No Load Voltage) =

Γ=
S.No. Vdc in Volts Vac in Volts RL in KΩ % Regulation =

Page 34
CALCULATIONS:

1. Ripple factor Without filter is =

2. Ripple factor With filter is =

3. % of Regulation without filter is =

4. % of Regulation with filter is =

Page 35
MODEL GRAPHS:

OUTPUT WITHOUT FILTER:

OUTPUT WITH FILTER:

WITHOUT FILTER:
Ripple Factor

% Regulation

WITH FILTER: RL
RL
Ripple Factor

% Regulation

RL
RL

Page 36
RESULT:
Thus the experiment on center tapped full wave rectifier is completed and the following parameters are
calculated.

1. Ripple factor Without filter is =

2. Ripple factor With filter is =
3. % of Regulation without filter is =
4. % of Regulation with filter is =

Page 37
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
BJT CHARACTERISTICS (CE CONFIGURATION)
AIM:

1. To draw the input and output characteristics of transistor connected in CE configuration.

2. To find Ri, Ro and β of the given transistor configuration.

APPARATUS:

1. Transistor (BC 547) --------------- 1No.

2. Regulated Power Supply (0-30 V) --------------- 1No.
3. Bread Board --------------- 1No.
4. Voltmeter (0-20 V, 0-1 V) --------------- EACH 1 No.
5. Ammeter (0-500 µA, 0-500 mA) --------------- EACH 1No.
6. Resistor (1 KΩ) ---------------- 1N0.
7. Connecting wires (required as per circuit)

FORMULAE:
1. Input Resistance Ri =
2. Output Resistance Ro =
3. Amplification Factor β =

THEORY:

A transistor is a three terminal device. The terminals are emitter, base, collector. In common emitter
configuration, input voltage is applied between base and emitter terminals and output is taken across the
collector and emitter terminals. Therefore the emitter terminal is common to both input and output.

The input characteristics resemble that of a forward biased diode curve. This is expected since the Base-
Emitter junction of the transistor is forward biased.

The output characteristics are drawn between Ic and VCE at constant IB, the collector current varies with
VCE upto few volts only, after this the collector current becomes almost constant, and independent of VCE.
The value of VCE up to which the collector current changes with V CE is known as Knee voltage. The
transistor always operated in the region above Knee voltage, IC is always constant and is approximately
equal to IB. The current amplification factor of CE configuration is given by β =

Page 39
 CIRCUIT DIAGRAM:

INPUT CHARACTERISTICS:

(0-250 µA)
1 KΩ C

B
BC 547

VCC
(0-20 V) (0-30 V)
VBB
(0-1 V)
(0-30 V)

OUTPUT CHARACTERISTICS:
(0-200 mA)

(0-250 µA) C
1 KΩ
BC 547
B

VBB (0-20 V) VCC

(0-30 V) (0-30 V)

Page 40
PROCEDURE:

INPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram.

2. For plotting the input characteristics the output voltage VCE is kept constant at 0V and for different
values of VBE, note down the values of IB

3. Repeat the above step by keeping VCE at 1V and 3V.

4. Tabulate all the readings.

5. Plot the graph between VBE and IB for constant VCE

OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram

2. For plotting the output characteristics the input current IB is kept constant at 50μA and for different
values of VCE, note down the values of IC

3. Repeat the above step by keeping IB at 75 μA 100 μA

4. Tabulate all the readings

5. Plot the graph between VCE and IC for constant IB

Page 41
TABULAR COLUMN:
INPUT CHARACTERISTICS:

VCE = 0 V VCE = 1 V VCE = 3 V

S.No.
VBE(V) IB(μA) VBE(V) IB(μA) VBE(V) IB(μA)

OUTPUT CHARACTARISTICS:

IB = 50 μA IB = 75 μA IB = 100 μA
S.No.
VCE(V) IC(mA) VCE(V) ICmA) VCE(V) IC(mA)

Page 42
CALCULATIONS:

1. Input Resistance Ri =

2. Output Resistance Ro =

3. Amplification Factor β =

Page 43
MODEL GRAPHS:

INPUT CHARACTERISTICS:

OUTPUT CHARACTERISTICS:

Page 44
RESULT:

Thus the input and output characteristics of transistor connected in CE configuration is drawn and the
following parameters are calculated.

1. Input Resistance Ri =

2. Output Resistance Ro =

3. Amplification Factor β =

Page 45
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
====================================================================
BJT CHARACTERISTICS (CB CONFIGURATION)
AIM:

1. To draw the input and output characteristics of transistor connected in CB configuration.

2. To find Ri, Ro and α of the given transistor configuration.

APPARATUS:

1. Transistor (BC 547) --------------- 1No.

2. Regulated Power Supply (0-30 V) --------------- 1No.
3. Bread Board --------------- 1No.
4. Voltmeter (0-20 V, 0-1 V) --------------- 2No.
5. Ammeter (0-50 mA) --------------- 2No.
6. Resistor (1 KΩ) ---------------- 1N0.
7. Connecting wires (required as per circuit)

FORMULAE:

1. Input Resistance Ri =
2. Output Resistance Ro =
3. Amplification Factor α =

THEORY:

A transistor is a three terminal device. The terminals are emitter, base, collector. In common base
configuration, input voltage is applied between emitter and base terminals and output is taken across the
collector and base terminals. Therefore the base terminal is common to both input and output.

The input characteristics resemble that of a forward biased diode curve. This is expected since the
Emitter- Base junction of the transistor is forward biased.

The output characteristics are drawn between Ic and VCB at constant IE, the collector current varies with
VCB upto few volts only, after this the collector current becomes almost constant, and independent of VCB.
The current amplification factor of CB configuration is given by α =

Page 47
 CIRCUIT DIAGRAM:

INPUT CHARACTERISTICS:

(0-50 mA)
1 KΩ BC 547

E C

VEE VCC
(0-30 V) (0-1 V) (0-20 V) (0-30 V)

OUTPUT CHARACTERISTICS:

(0-50 mA) BC 547

(0-50 mA)
1 KΩ
E C

VCC
VEE (0-20 V) (0-30 V)
(0-30 V)

Page 48
PROCEDURE:

INPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram.

2. For plotting the input characteristics the output voltage VCB is kept constant at 0V and for different
values of VEB, note down the values of IE

3. Repeat the above step by keeping VCB at 1V and 3V.

4. Tabulate all the readings.

5. Plot the graph between VEB and IE for constant VCB

OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram

2. For plotting the output characteristics the input current IE is kept constant at 10mA and for different
values of VCB, note down the values of IC

3. Repeat the above step by keeping IB at 20mA and 30mA

4. Tabulate all the readings

5. Plot the graph between VCB and IC for constant IE

Page 49
TABULAR COLUMN:

INPUT CHARACTERISTICS:
VCB = 0 V VCB = 1 V VCB = 3 V
S.No.
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

OUTPUT CHARACTARISTICS:

IE = 10 mA IE = 20 mA IE = 30 mA
S.No.
VCB(V) IC(mA) VCB(V) ICmA) VCB(V) IC(mA)

Page 50
CALCULATIONS:

1. Input Resistance Ri =

2. Output Resistance Ro =

3. Amplification Factor α =

Page 51
MODEL GRAPHS:

INPUT CHARACTERISTICS:

OUTPUT CHARACTERISTICS:

Page 52
RESULT:
Thus the input and output characteristics of transistor connected in CB configuration is drawn and the
following parameters are calculated.

1. Input Resistance Ri =

2. Output Resistance Ro =

3. Amplification Factor α =

Page 53
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
FET CHARACTERISTICS (CS CONFIGURATION)
AIM:

1. To draw the drain and transfer characteristics of JFET connected in CS configuration.

2. To find rd, gm and µ of the given JFET.

APPARATUS:

1. JFET (BFW 10/11) --------------- 1No.

2. Regulated Power Supply (0-30 V) --------------- 1No.
3. Bread Board --------------- 1No.
4. Voltmeter (0-20 V) --------------- 2No.
5. Ammeter (0-50 mA) --------------- 1No.
6. Resistor (1 KΩ) ---------------- 1N0.
7. Connecting wires (required as per circuit)

FORMULAE:

1. Drain Resistance rd =

2. Trans Conductance gm =

3. Amplification Factor µ = rd x gm

THEORY:

A JFET consists of a P- type or N- type silicon bar. The bar is the conducting channel for the charge
carriers. If the bar is made up of N- type material then it is known as N channel FET and if the bar is
made up of P- type material then it is known as P channel FET. There are three terminals in FET namely
Source, Gate and Drain. In JFET, the gate to source voltage is always reverse biased.

When a reverse voltage VGS is applied between the gate and source, the width of the depletion layer is
increased. Thus reduces the width of the channel thereby increases the resistance of N- type bar, as a
result the current from drain to source is decreased.

Page 55
 CIRCUIT DIAGRAM:

(0-50 mA)

1 KΩ D

G
BFW10/11

(0-20 V) VDD
(0-20 V) (0-30 V)
VGG
(0-30 V)

Page 56
PROCEDURE:

DRAIN CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram.

2. For plotting the drain characteristics the input voltage VGS is kept constant at 0V and for different
values of VDS, note down the values of ID

3. Repeat the above step by keeping VGS at 0.5V and 1V.

4. Tabulate all the readings.

5. Plot the graph between VDS and ID for constant VGS

TRANSFER CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram

2. For plotting the transfer characteristics the output voltage VDS is kept constant at 5 V and for
different values of VGS, note down the values of ID

3. Tabulate all the readings

4. Plot the graph between VGS and ID for constant VDS

Page 57
TABULAR COLUMN:

DRAIN CHARACTERISTICS:

VGS = 0 V VGS = - 0.5 V VGS = - 1 V

S.No.
VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)

TRANSFER CHAREACTARISTICS:

VDS = 5 V
S.No.
VGS(V) ID(mA)

Page 58
CALCULATIONS:

1. Drain Resistance rd =

2. Transconductance gm =

3. Amplification Factor µ = rd x gm

Page 59
MODEL GRAPHS:

DRAIN CHARACTERISTICS:

TRANSFER CHARACTERISTICS:

Page 60
RESULT:

Thus the drain and transfer characteristics of JFET connected in CS configuration is drawn and the
following parameters are calculated.

1. Drain Resistance rd =

2. Transconductance gm =

3. Amplification Factor µ =

Page 61
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
UJT CHARACTERISTICS
AIM:

To obtain the characteristics of UJT and to determine the intrinsic stand off ratio.

APPARATUS:

1. UJT (2N2646) --------------- 1No.

2. Regulated Power Supply (0-30 V) --------------- 1No.
3. Bread Board --------------- 1No.
4. Voltmeter (0-20 V) --------------- 2No.
5. Ammeter (0-50 mA) --------------- 1No.
6. Resistor (1 KΩ) ---------------- 1N0.
7. Connecting wires (required as per circuit)

FORMULAE:

1. Intrinsic stand off ratio ƞ=

THEORY:

A Uni-Junction Transistor (UJT) is an electronic semiconductor device that has only one junction. The
Uni-Junction Transistor (UJT) has three terminals, an emitter (E) and two bases (B1 and B2). The base is
formed by lightly doped n-type bar of silicon. Two ohmic contacts B1 and B2 are attached at its ends.
The emitter is of p-type and it is heavily doped. The resistance between B1 and B2, when the emitter is
open-circuit is called inter-base resistance. The original uni-junction transistor, or UJT, is a simple
device that is essentially a bar of N type semiconductor material into which P type material has been
diffused somewhere along its length. The 2N2646 is the most commonly used version of the UJT.

PROCEDURE:

1. Connect the circuit as per the circuit diagram.

2. Keep the base to base voltage VBB constant.

3. Vary the emitter voltages in convenient steps and note down the emitter current.

4. Repeat the above steps for different constant base to base voltages VBB.

5. Plot the graph between VEB and IE for constant VBB.

Page 63
 CIRCUIT DIAGRAM:

(0-50 mA)
1 KΩ
B2
E
BFW10/11

B1

(0-20 V)
(0-20 V)
RPS 2
RPS 1 (0-30 V)
(0-30 V)

TABULAR COLUMN:

VBB = 7 V VBB = 5 V VBB = 3 V

S.No.
VEB(V) IB(mA) VEB(V) IB(mA) VEB(V) IB(mA)

Page 64
CALCULATIONS:

1. Intrinsic stand off ratio ƞ=

Page 65
MODEL GRAPH:

Page 66
RESULT:
Thus the characteristics of UJT are obtained and the intrinsic stand off ratio is calculated as
_______________.

Page 67
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
====================================================================
LED CHARACTERISTICS
AIM:

To verify the characteristics of Light Emitting Diode (LED) and determine the cut- in voltage.

APPARATUS REQUIRED:

1. LED --------------- 1No.

2. Resistor – 1KΏ --------------- 1No.
3. Bread Board --------------- 1No.
4. Voltmeter (0-20V) --------------- 1No.
5. Ammeter (0-50mA) --------------- 1No.
6. Regulated Power Supply (0-30V) ---------------- 1N0.
7. Connecting wires (required as per circuit)

THEORY:

LED is semiconductor junction diode which emits light when current passes through it in forward bias
condition. P type of semiconductor consists of large number of holes while N type of semiconductor
consists of large number of electrons. At zero bias (no voltage across junction), depletion region exists
and it separate out two regions. When LED is forward biased, barrier potential reduces and depletion
region becomes narrow. Electron crosses the depletion region and recombines with holes.

Similarly holes crosses depletion region and recombine with electrons. Each recombination of hole and
electron produces photon (light) The intensity of light emitted depends on the number of minority carriers
available for recombination. Wavelength (or frequency) of emitted light depends on band-gap energy.
The light emitting diode works by the process of spontaneous emission.

Light source materials are made from compound of group-III (Al,Ga,In) and group-V (P,As,Sb)
element.The wavelength generated by the LED depends on bandgap energy and bandgap energy depends
on doping level of above elements.

Page 69
 CIRCUIT DIAGRAM:

1 KΩ (0-50 mA)

A
A

(0-30 V) V (0-20 V)
K

MODEL GRAPH:

V
TABULAR COLUMN:

Voltage across the diode Current through the diode in

S.No.
in Volts mA

Page 70
PROCEDURE:

1. Connections are made as per the circuit diagram.

2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is
connected to the cathode of the diode,

3. Switch on the power supply and increases the input voltage (supply voltage) in steps.

4. Note down the corresponding current flowing through the diode and voltage across the diode
for each and every step of the input voltage.

5. The reading of voltage and current are tabulated.

6. Graph is plotted between voltage and current.

RESULT:

Thus the characteristics of given LED is verified and the cut- in voltage is calculated as
_______________.

Page 71
 SRI VENKATESWARA COLLEGE OF ENGINEERING AND TECHNOLOGY
(AUTONOMOUS)
DEPT. OF ECE
EXPERIMENT NO.: DATE:
====================================================================
V-I CHARACTERISTIC OF SCR

AIM:

To obtain the V-I characteristics of SCR and find the break over voltage and holding current.

APPARATUS REQUIRED:

1. SCR (TYN604) ----------------- 1No.

2. Resistors- (330 Ω, 100 Ω) ----------------- Each 1No.
3. Voltmeter (0-30 V) --------------- 1. No.
4. Ammeter (0-100 mA, 0-50 mA) --------------- EACH 1No.
5. Diode 1N4007 ----------------- 1No.
6. Regulated Power Supply (0-30 V) ----------------- 1No.
7. Breadboard ----------------- 1No.
8. Connecting wires (required as per circuit)

THEORY:

A silicon controlled rectifier (SCR) is a semiconductor device that acts as a true electronic switch. It can
change the alternating current in to direct current. It can control the amount of power fed to the load.
Thus the SCR combines the features of rectifier and a transistor. If the supply voltage is less than the
break over voltage, the gate will open (IG = 0). Then increase the supply voltage from zero, a point is
reached when the SCR starts conducting. Under this condition, the voltage across the SCR suddenly drop
and most of the supply voltage appears across the load resistance RL. If proper gate current is made to
flow the SCR can close at much smaller supply voltage.

Page 73
CIRCUIT DIAGRAM:

Page 74
PROCEDURE:

1. The connections are made as per in the circuit diagram.

2. First by varying RPS 2 then gate current (IG) is kept constant.
3. The voltage between anode and cathode is increased in step by step by varying the RPS 1.
4. The corresponding anode current (IA) is noted.
5. The process is repeated for two more constant value of IG, the readings are tabulated.

Page 75
TABULAR COLUMN:

Anode –
AnodeCathode
Gate Current Ig Anode Current Cathode volt
S. No. Voltage Vak
(mA) Ia (mA) when SCR in
(Volts)
ON (volts)

Page 76
MODEL GRAPH:

RESULT:

Thus the V-I characteristics of SCR was obtained and graph was drawn.

Page 77