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2N7002K

Small Signal MOSFET

60 V, 380 mA, Single, N−Channel, SOT−23
Features
• ESD Protected
• Low RDS(on)
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• Surface Mount Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX
Compliant
1.6 W @ 10 V
60 V 380 mA
Applications 2.5 W @ 4.5 V
• Low Side Load Switch
• Level Shift Circuits SIMPLIFIED SCHEMATIC
• DC−DC Converter
• Portable Applications i.e. DSC, PDA, Cell Phone, etc. Gate 1
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating Symbol Value Unit 3 Drain
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS ±20 V 2
Source
Drain Current (Note 1) ID mA
Steady State 1 sq in Pad TA = 25°C 380
TA = 85°C 270 (Top View)

Drain Current (Note 2) ID mA MARKING DIAGRAM

Steady State Minimum Pad TA = 25°C 320
TA = 85°C 230 3 & PIN ASSIGNMENT
Drain
Power Dissipation PD mW 3
Steady State 1 sq in Pad 420 1
Steady State Minimum Pad 300 2
704 MG
Pulsed Drain Current (tp = 10 ms) IDM 1.5 A SOT−23 G
Operating Junction and Storage TJ, TSTG −55 to °C CASE 318
Temperature Range +150 STYLE 21 1 2
Gate Source
Source Current (Body Diode) IS 300 mA
704 = Specific Device Code*
Lead Temperature for Soldering Purposes TL 260 °C M = Date Code*
(1/8″ from case for 10 s) G = Pb−Free Package
(Note: Microdot may be in either location)
Gate−Source ESD Rating ESD 2000 V
(HBM, Method 3015) *Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
Stresses exceeding Maximum Ratings may damage the device. Maximum ing upon manufacturing location. This is a
Ratings are stress ratings only. Functional operation above the Recommended representation only and actual devices may
Operating Conditions is not implied. Extended exposure to stresses above the not match this drawing exactly.
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS ORDERING INFORMATION
Characteristic Symbol Max Unit Device Package Shipping†
Junction−to−Ambient − Steady State (Note 1) RqJA 300 °C/W 2N7002KT1G SOT−23 3000/Tape & Reel
Junction−to−Ambient − t ≤ 5 s (Note 1) 92 (Pb−Free)

Junction−to−Ambient − Steady State (Note 2) 417 2N7002KT1H SOT−23 3000/Tape & Reel
(Pb−Free)
Junction−to−Ambient − t ≤ 5 s (Note 2) 154
†For information on tape and reel specifications,
1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. including part orientation and tape sizes, please
2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

February, 2012 − Rev. 9 2N7002K/D
This datasheet has been downloaded from http://www.digchip.com at this page
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2N7002K

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ 71 mV/°C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1 mA
VDS = 60 V TJ = 125°C 500
VGS = 0 V, TJ = 25°C 100 nA
VDS = 50 V
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 mA
VDS = 0 V, VGS = ±10 V 450 nA
VDS = 0 V, VGS = ±5.0 V 150 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 2.3 V
Negative Threshold Temperature VGS(TH)/TJ 4.0 mV/°C
Coefficient
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6 W
VGS = 4.5 V, ID = 200 mA 1.33 2.5
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance CISS 24.5 pF
VGS = 0 V, f = 1 MHz,
Output Capacitance COSS 4.2
VDS = 20 V
Reverse Transfer Capacitance CRSS 2.2
Total Gate Charge QG(TOT) 0.7 nC
Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V; 0.1
Gate−to−Source Charge QGS ID = 200 mA 0.3
Gate−to−Drain Charge QGD 0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 4)
Turn−On Delay Time td(ON) 12.2 ns
Rise Time tr VGS = 10 V, VDD = 25 V, 9.0
Turn−Off Delay Time td(OFF) ID = 500 mA, RG = 25 W 55.8
Fall Time tf 29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.8 1.2 V
IS = 200 mA TJ = 85°C 0.7
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
4. Switching characteristics are independent of operating junction temperatures

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2N7002K

TYPICAL CHARACTERISTICS

1.6 1.2
VGS = 10 V 5.0 V
4.5 V
9.0 V
8.0 V 4.0 V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

1.2
7.0 V
6.0 V 0.8
3.5 V
0.8
TJ = 25°C
3.0 V 0.4
0.4
2.5 V
TJ = 125°C TJ = −55°C
0 0
0 2 4 6 0 2 4 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

3.2 3.2
VGS = 4.5 V VGS = 10 V
2.8 2.8
TJ = 125°C
2.4 TJ = 85°C 2.4 TJ = 125°C

2.0 TJ = 25°C 2.0 TJ = 85°C

1.6 1.6 TJ = 25°C

TJ = −55°C
1.2 1.2
TJ = −55°C
0.8 0.8

0.4 0.4
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and
Temperature Temperature
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

2.4 2.2
ID = 0.2 A
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

2.0 ID = 500 mA
1.8
VGS = 4.5 V
1.6
VGS = 10 V
1.4
ID = 200 mA
1.2

1.0
0.8

0.4 0.6
2 4 6 8 10 −50 −25 0 25 50 75 100 125 150
VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with
Voltage Temperature

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2N7002K

TYPICAL CHARACTERISTICS

30 5

VGS, GATE−TO−SOURCE VOLTAGE (V)

Ciss
TJ = 25°C
4 ID = 0.2 A
C, CAPACITANCE (pF)

20
3
TJ = 25°C
VGS = 0 V
Coss 2
10

Crss
0 0
0 4 8 12 16 20 0 0.2 0.4 0.6 0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

10 1.3
ID = 250 mA
VGS = 0 V VGS(TH), THRESHOLD VOLTAGE (V) 1.2
IS, SOURCE CURRENT (A)

1.1
1
1.0

TJ = 85°C TJ = 25°C 0.9

0.8
0.1
0.7

0.6

0.01 0.5
0.4 0.6 0.8 1.0 1.2 −50 −25 0 25 50 75 100 125 150
VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Threshold Voltage with
Temperature

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2N7002K

TYPICAL CHARACTERISTICS

1000
RqJC(t) (°C/W) EFFECTIVE TRANSIENT

Duty Cycle = 0.5

100 0.2
THERMAL RESISTANCE

0.1
0.05
10 0.02

0.01
1
SINGLE PULSE

0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 11. Thermal Response − 1 sq in pad

1000
RqJC(t) (°C/W) EFFECTIVE TRANSIENT

Duty Cycle = 0.5

0.2
100
THERMAL RESISTANCE

0.1
0.05
0.02
10

0.01
1
SINGLE PULSE

0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 12. Thermal Response − minimum pad

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2N7002K

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AP

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D 2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
SEE VIEW C THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
3 THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
E HE MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.89 1.00 1.11 0.035 0.040 0.044
c A1 0.01 0.06 0.10 0.001 0.002 0.004
1 2
b 0.37 0.44 0.50 0.015 0.018 0.020
b c 0.09 0.13 0.18 0.003 0.005 0.007
e 0.25 D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
q e 1.78 1.90 2.04 0.070 0.075 0.081
L 0.10 0.20 0.30 0.004 0.008 0.012
L1 0.35 0.54 0.69 0.014 0.021 0.029
A HE 2.10 2.40 2.64 0.083 0.094 0.104
q 0° −−− 10 ° 0° −−− 10°
L
A1 STYLE 21:
L1 PIN 1. GATE
2. SOURCE
VIEW C 3. DRAIN

SOLDERING FOOTPRINT
0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035
SCALE 10:1 ǒinches
mm Ǔ

0.8
0.031

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