Features: or Modifications Due To Changes in Technical Specifications. Rev. C, Issue Date: 2009/10/13

EN25Q40
EN25Q40
4 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
• Single power supply operation • Software and Hardware Write Protection:

- Full voltage range: 2.7-3.6 volt - Write Protect all or portion of memory via
software
• Serial Interface Architecture
- Enable/Disable protection with WP# pin
- SPI Compatible: Mode 0 and Mode 3
• High performance program/erase speed
• 4 M-bit Serial Flash
- Page program time: 1.3ms typical
- 4 M-bit/512 K-byte/2048 pages
- Sector erase time: 90ms typical
- 256 bytes per programmable page
- Block erase time 500ms typical
• Standard, Dual or Quad SPI - Chip erase time: 3.5 seconds typical
- Standard SPI: CLK, CS#, DI, DO, WP#
• Lockable 256 byte OTP security sector
- Dual SPI: CLK, CS#, DQ0, DQ1, WP#
- Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3 • Minimum 100K endurance cycle
• High performance • Package Options
- 100MHz clock rate for one data bit - 8 pins SOP 150mil body width
- 80MHz clock rate for two data bits - 8 contact VDFN
- 80MHz clock rate for four data bits - All Pb-free packages are RoHS compliant
• Low power consumption • Industrial temperature Range
- 12 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 128 sectors of 4-Kbyte
- 8 blocks of 64-Kbyte
- Any sector or block can be erased individually
GENERAL DESCRIPTION
The EN25Q40 is a 4 Megabit (512K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q40 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0(DI),
DQ1(DO), DQ2(WP#) and DQ3(NC). SPI clock frequencies of up to 80MHz are supported allowing
equivalent clock rates of 160MHz for Dual Output and 320MHz for Quad Output when using the
Dual/Quad Output Fast Read instructions. The memory can be programmed 1 to 256 bytes at a time,
using the Page Program instruction.
The EN25Q40 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25Q40 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions 1 ©2004 Eon Silicon Solution, Inc., www.eonssi.com
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2009/10/13
EN25Q40
Figure.1 CONNECTION DIAGRAMS
CS# 1 8 VCC
DO (DQ1) 2 7 NC (DQ3)
WP# (DQ2) 3 6 CLK
VSS 4 5 DI (DQ0)
8 - LEAD SOP
CS# 1 8 VCC
DO (DQ1) 2 7 NC (DQ3)
WP# (DQ2) 3 6 CLK
VSS 4 5 DI (DQ0)
8 - LEAD VDFN
EN25Q40
Figure 2. BLOCK DIAGRAM
Note:
1. DQ0 and DQ1 are used for Dual and Quad instructions.
2. DQ0 ~ DQ3 are used for Quad instructions.
EN25Q40
Table 1. Pin Names
Symbol Pin Name

CLK Serial Clock Input
*1
DI (DQ0) Serial Data Input (Data Input Output 0)
*1
DO (DQ1) Serial Data Output (Data Input Output 1)
CS# Chip Enable
*2
WP# (DQ2) Write Protect (Data Input Output 2)
*2
NC(DQ3) Not Connect (Data Input Output 3)
Vcc Supply Voltage (2.7-3.6V)
Vss Ground
NC No Connect
Note:
1. DQ0 and DQ1 are used for Dual and Quad instructions.
2. DQ0 ~ DQ3 are used for Quad instructions.
SIGNAL DESCRIPTION
Serial Data Input, Output and IOs (DI, DO and DQ0, DQ1, DQ2, DQ3)
The EN25Q40 support standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions use
the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the
rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to
read data or status from the device on the falling edge CLK.
Dual and Quad SPI instruction use the bidirectional IO pins to serially write instruction, addresses or
data to the device on the rising edge of CLK and read data or status from the device on the falling edge
of CLK.
Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See
SPI Mode")
Chip Select (CS#)
The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device is
deselected and the Serial Data Output (DO, or DQ0, DQ1, DQ2 and DQ3) pins are at high impedance.
When deselected, the devices power consumption will be at standby levels unless an internal erase,
program or status register cycle is in progress. When CS# is brought low the device will be selected,
power consumption will increase to active levels and instructions can be written to and data read from
the device. After power-up, CS# must transition from high to low before a new instruction will be
accepted.
Write Protect (WP#)
The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (BP0, BP1and BP2) bits and Status Register
Protect (SRP) bits, a portion or the entire memory array can be hardware protected. The WP# function
is only available for standard SPI and Dual SPI operation, when during Quad SPI, this pin is the Serial
Data IO (DQ2) for Quad I/O operation.
EN25Q40
MEMORY ORGANIZATION
The memory is organized as:
z 524,288 bytes
z Uniform Sector Architecture
8 blocks of 64-Kbyte
128 sectors of 4-Kbyte
z 2048 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
Table 2. Uniform Block Sector Architecture (Continued)
Block Sector Address range

127 07F000h 07FFFFh
7
….
….
….
112 070000h 070FFFh
111 06F000h 06FFFFh
6
….
….
….
96 060000h 060FFFh
95 05F000h 05FFFFh
5
….
….
….
80 050000h 050FFFh
79 04F000h 04FFFFh
4
….
….
….
64 040000h 040FFFh
63 03F000h 03FFFFh
3
….
….
….
48 030000h 030FFFh
47 02F000h 02FFFFh
2
….
….
….
32 020000h 020FFFh
31 01F000h 01FFFFh
1
….
….
….
16 010000h 010FFFh
15 00F000h 00FFFFh
….
….
….
4 004000h 004FFFh
0 3 003000h 003FFFh
2 002000h 002FFFh
1 001000h 001FFFh
0 000000h 000FFFh
EN25Q40
OPERATING FEATURES
Standard SPI Modes

The EN25Q40 is accessed through an SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus operation
Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3, as
shown in Figure 3, concerns the normal state of the CLK signal when the SPI bus master is in standby
and data is not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low. For
Mode 3 the CLK signal is normally high. In either case data input on the DI pin is sampled on the rising
edge of the CLK. Data output on the DO pin is clocked out on the falling edge of CLK.
Figure 3. SPI Modes
Dual SPI Instruction

The EN25Q40 supports Dual SPI operation when using the “ Dual Output Fast Read and Dual I/O Fast
Read “ (3Bh and BBh) instructions. These instructions allow data to be transferred to or from the Serial
Flash memory at two to three times the rate possible with the standard SPI. The Dual Read instructions
are ideal for quickly downloading code from Flash to RAM upon power-up (code-shadowing) or for
application that cache code-segments to RAM for execution. The Dual output feature simply allows the
SPI input pin to also serve as an output during this instruction. When using Dual SPI instructions the DI
and DO pins become bidirectional I/O pins; DQ0 and DQ1. All other operations use the standard SPI
interface with single output signal.
Quad SPI Instruction

The EN25Q40 supports Quad output operation when using the Quad I/O Fast Read (EBh).This
instruction allows data to be transferred to or from the Serial Flash memory at four to six times the rate
possible with the standard SPI. The Quad Read instruction offer a significant improvement in
continuous and random access transfer rates allowing fast code-shadowing to RAM or for application
that cache code-segments to RAM for execution. When using Quad SPI instruction the DI and DO pins
become bidirectional I/O pins; DQ0 and DQ1, and the WP# and NC pins become DQ2 and DQ3
respectively.
EN25Q40
Figure 4. Quad SPI Modes
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and
a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal
Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be programmed
at a time (changing bits from 1 to 0) provided that they lie in consecutive addresses on the same page
of memory.
Sector Erase, Block Erase and Chip Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied, the
bytes of memory need to have been erased to all 1s (FFh). This can be achieved a sector at a time,
using the Sector Erase (SE) instruction, a block at a time using the Block Erase (BE) instruction or
throughout the entire memory, using the Chip Erase (CE) instruction. This starts an internal Erase cycle
(of duration tSE tBE or tCE). The Erase instruction must be preceded by a Write Enable (WREN)
instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE, BE or
CE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, tBE or tCE). The Write In
Progress (WIP) bit is provided in the Status Register so that the application program can monitor its
value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is complete.
Active Power, Stand-by Power and Deep Power-Down Modes
When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip
Select (CS#) is High, the device is disabled, but could remain in the Active Power mode until all internal
cycles have completed (Program, Erase, Write Status Register). The device then goes into the Stand-
by Power mode. The device consumption drops to ICC1.
The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down
Mode (DP) instruction) is executed. The device consumption drops further to ICC2. The device remains
in this mode until another specific instruction (the Release from Deep Power-down Mode and Read
Device ID (RDI) instruction) is executed.
EN25Q40
All other instructions are ignored while the device is in the Deep Power-down mode. This can be used
as an extra software protection mechanism, when the device is not in active use, to protect the device
from inadvertent Write, Program or Erase instructions.
Status Register. The Status Register contains a number of status and control bits that can be read or
set (as appropriate) by specific instructions.
WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status
Register, Program or Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of
the area to be software protected against Program and Erase instructions.
WPDIS bit. The Write Protect disable (WPDIS) bit, non-volatile bit, when it is reset to “0” (factory
default) to enable WP# function or is set to “1” to disable WP# function (can be floating during SPI
mode.)
SRP bit / OTP_LOCK bit The Status Register Protect (SRP) bit operates in conjunction with the Write
Protect (WP#) signal. The Status Register Protect (SRP) bit and Write Protect (WP#) signal allow the
device to be put in the Hardware Protected mode. In this mode, the non-volatile bits of the Status
Register (SRP, BP2, BP1, BP0) become read-only bits.
In OTP mode, this bit serves as OTP_LOCK bit, user can read/program/erase OTP sector as normal
sector while OTP_LOCK bit value is equal 0, after OTP_LOCK is programmed with 1 by WRSR
command, the OTP sector is protected from program and erase operation. The OTP_LOCK bit can only
be programmed once.
Note : In OTP mode, the WRSR command will ignore any input data and program OTP_LOCK bit to 1,
user must clear the protect bits before entering OTP mode and program the OTP code, then execute
WRSR command to lock the OTP sector before leaving OTP mode.
Write Protection
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern the EN25Q40
provides the following data protection mechanisms:
z Power-On Reset and an internal timer (tPUW) can provide protection against inadvertent changes
while the power supply is outside the operating specification.
z Program, Erase and Write Status Register instructions are checked that they consist of a number
of clock pulses that is a multiple of eight, before they are accepted for execution.
z All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set
the Write Enable Latch (WEL) bit. This bit is returned to its reset state by the following events:
– Power-up
– Write Disable (WRDI) instruction completion or Write Status Register (WRSR) instruction
completion or Page Program (PP) instruction completion or Sector Erase (SE) instruction
completion or Block Erase (BE) instruction completion or Chip Erase (CE) instruction
completion
z The Block Protect (BP2, BP1, BP0) bits allow part of the memory to be configured as read-only.
This is the Software Protected Mode (SPM).
z The Write Protect (WP#) signal allows the Block Protect (BP2, BP1, BP0) bits and Status Register
Protect (SRP) bit to be protected. This is the Hardware Protected Mode (HPM).
z In addition to the low power consumption feature, the Deep Power-down mode offers extra
software protection from inadvertent Write, Program and Erase instructions, as all instructions are
ignored except one particular instruction (the Release from Deep Power-down instruction).
EN25Q40
Table 3. Protected Area Sizes Sector Organization
Status Register Memory Content

Content
BP2 BP1 BP0
Protect Areas Addresses Density(KB) Portion
Bit Bit Bit
0 0 0 None None None None
0 0 1 Sector 0 to 125 000000h-07DFFFh 504KB Lower 126/128
0 1 0 Sector 0 to 123 000000h-07BFFFh 496KB Lower 124/128
0 1 1 Sector 0 to 119 000000h-077FFFh 480KB Lower 120/128
1 0 0 Sector 0 to 111 000000h-06FFFFh 448KB Lower 112/128
1 1 1 All 000000h-07FFFFh 512KB All
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial
Data Input (DI) is sampled on the first rising edge of Serial Clock (CLK) after Chip Select (CS#) is
driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first,
on Serial Data Input (DI), each bit being latched on the rising edges of Serial Clock (CLK).
The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by
both or none. Chip Select (CS#) must be driven High after the last bit of the instruction sequence has
been shifted in. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed
(Fast_Read), Read Status Register (RDSR) or Release from Deep Power-down, and Read Device ID
(RDI) instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip Select
(CS#) can be driven High after any bit of the data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write
Status Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP)
instruction, Chip Select (CS#) must be driven High exactly at a byte boundary, otherwise the instruction
is rejected, and is not executed. That is, Chip Select (CS#) must driven High when the number of clock
pulses after Chip Select (CS#) being driven Low is an exact multiple of eight. For Page Program, if at
any time the input byte is not a full byte, nothing will happen and WEL will not be reset.
In the case of multi-byte commands of Page Program (PP), and Release from Deep Power Down
(RES ) minimum number of bytes specified has to be given, without which, the command will be
ignored.
In the case of Page Program, if the number of byte after the command is less than 4 (at least 1
data byte), it will be ignored too. In the case of SE and BE, exact 24-bit address is a must, any
less or more will cause the command to be ignored.
All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase
cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues
unaffected.
EN25Q40
Table 4A. Instruction Set
Instruction Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 n-Bytes

Code
EQIO 38h
RSTQIO(1) FFh
Write Enable 06h
Write Disable / Exit
04h
OTP mode
Read Status
Register
05h (S7-S0)(2) continuous(3)
Write Status
01h S7-S0
Register
Page Program 02h A23-A16 A15-A8 A7-A0 D7-D0 Next byte continuous
Sector Erase / OTP
20h A23-A16 A15-A8 A7-A0
erase
Block Erase D8h A23-A16 A15-A8 A7-A0
Chip Erase C7h/ 60h
Deep Power-down B9h
Release from Deep (4)
Power-down, and dummy dummy dummy (ID7-ID0)
read Device ID ABh
Release from Deep
Power-down
Manufacturer/ 00h (M7-M0) (ID7-ID0) (5)
90h dummy dummy
Device ID 01h (ID7-ID0) (M7-M0)
Read Identification 9Fh (M7-M0) (ID15-ID8) (ID7-ID0) (6)
Enter OTP mode 3Ah
Notes:
1. Device accepts eight-clocks command in Standard SPI mode, or two-clocks command in Quad SPI mode.
2. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from the
device on the DO pin.
3. The Status Register contents will repeat continuously until CS# terminate the instruction.
4. The Device ID will repeat continuously until CS# terminates the instruction.
5. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminates the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.
6. (M7-M0) : Manufacturer, (ID15-ID8) : Memory Type, (ID7-ID0) : Memory Capacity.
EN25Q40
Table 4B. Instruction Set (Read Instruction)
Instruction Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 n-Bytes

Code
Read Data 03h A23-A16 A15-A8 A7-A0 (D7-D0) (Next byte) continuous
(Next Byte)
Fast Read 0Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0)
continuous
(one byte
Dual Output Fast
3Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0, …) (1) per 4 clocks,
Read
continuous)
A7-A0, (one byte
Dual I/O Fast Read BBh A23-A8(2) (D7-D0, …) (1) per 4 clocks,
dummy (2) continuous)
A23-A0, (dummy,
(one byte
Quad I/O Fast Read EBh (D7-D0, …) (3) per 2 clocks,
dummy (4) D7-D0 ) (5)
continuous)
Notes:
1. Dual Output data
DQ0 = (D6, D4, D2, D0)
DQ1 = (D7, D5, D3, D1)
2. Dual Input Address

DQ0 = A22, A20, A18, A16, A14, A12, A10, A8 ; A6, A4, A2, A0, dummy 6, dummy 4, dummy 2, dummy 0
DQ1 = A23, A21, A19, A17, A15, A13, A11, A9 ; A7, A5, A3, A1, dummy 7, dummy 5, dummy 3, dummy 1
3. Quad Data
DQ0 = (D4, D0, …… )
DQ1 = (D5, D1, …… )
DQ2 = (D6, D2, …... )
DQ3 = (D7, D3, …... )
4. Quad Input Address

DQ0 = A20, A16, A12, A8, A4, A0, dummy 4, dummy 0
5. Quad I/O Fast Read Data

DQ0 = ( dummy 12, dummy 8, dummy 4, dummy 0, D4, D0 )
EN25Q40
Table 5. Manufacturer and Device Identification
OP Code (M7-M0) (ID15-ID0) (ID7-ID0)
ABh 12h
90h 1Ch 12h
9Fh 1Ch 3013h
Enable Quad I/O (EQIO) (38h)

The Enable Quad I/O (EQIO) instruction will enable the flash device for Quad SPI bus operation. Upon
completion of the instruction, all instructions thereafter will be 4-bit multiplexed input/output until a
power cycle or “ Reset Quad I/O instruction “ instruction, as shown in Figure 5. The device did not
support the Read Data Bytes (READ) (03h), Dual Output Fast Read (3Bh) and Dual Input/Output
FAST_READ (BBh) modes while the Enable Quad I/O (EQIO) (38h) turns on.
Figure 5. Enable Quad I/O Sequence Diagram
Reset Quad I/O (RSTQIO) (FFh)

The Reset Quad I/O instruction resets the device to 1-bit Standard SPI operation. To execute a Reset
Quad I/O operation, the host drives CS# low, sends the Reset Quad I/O command cycle (FFh) then,
drives CS# high. The device accepts either Standard SPI ( 8 clocks ) or Quad SPI ( 2 clocks) command
cycles. For Standard SPI, DQ [3:1] are don’t care for this command, but should be driven to VIH or VIL.
EN25Q40
Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 6) sets the Write Enable Latch (WEL) bit. The Write
Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase
(BE), Chip Erase (CE) and Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the
instruction code, and then driving Chip Select (CS#) High.
The instruction sequence is shown in Figure 6.1 while using the Enable Quad I/O (EQIO) (38h) command.
Figure 6. Write Enable Instruction Sequence Diagram
Write Disable (WRDI) (04h)

The Write Disable instruction (Figure 7) resets the Write Enable Latch (WEL) bit in the Status Register
to a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by driving Chip
Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip Select (CS#)
high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write
Status Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase instructions.
Figure 7. Write Disable Instruction Sequence Diagram
EN25Q40
Figure 7.1 Write Enable/Disable Instruction Sequence under EQIO Mode
Read Status Register (RDSR) (05h)

The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status
Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in
progress. When one of these cycles is in progress, it is recommended to check the Write In Progress
(WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register
continuously, as shown in Figure 8.
Figure 8. Read Status Register Instruction Sequence Diagram
EN25Q40
Figure 8.1 Read Status Register Instruction Sequence under EQIO Mode
Table 6. Status Register Bit Locations
S7 S6 S5 S4 S3 S2 S1 S0
SRP OTP_LOCK BP2 BP1 BP0 WEL WIP
Status bit WPDIS (Block Protected (Block Protected (Block Protected (Write Enable (Write In
Register (WP# disable)
(note 1) bits) bits) bits) Latch) Progress bit)
Protect
Reserved
1 = status 1 = WP# bits 1 = write 1 = write
1 = OTP
register disable enable operation
sector is (note 2) (note 2) (note 2)
write 0 = WP# 0 = not write 0 = not in write
protected
disable enable enable operation
Non-volatile bit Non-volatile bit Non-volatile bit Non-volatile bit Non-volatile bit volatile bit volatile bit
Note
1. In OTP mode, SRP bit is served as OTP_LOCK bit.
2. See the table “Protected Area Sizes Sector Organization”.
The status and control bits of the Status Register are as follows:
WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status
Register, Program or Erase cycle. When set to 1, such a cycle is in progress, when reset to 0 no such
cycle is in progress.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is
reset and no Write Status Register, Program or Erase instruction is accepted.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of
the area to be software protected against Program and Erase instructions. These bits are written with
the Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP2, BP1, BP0)
bits is set to 1, the relevant memory area (as defined in Table 3.) becomes protected against Page
Program (PP) Sector Erase (SE) and , Block Erase (BE), instructions. The Block Protect (BP2, BP1,
EN25Q40
BP0) bits can be written provided that the Hardware Protected mode has not been set. The Chip Erase
(CE) instruction is executed if, and only if, all Block Protect (BP2, BP1, BP0) bits are 0.
Reserved bit. Status register bit locations 5 is reserved for future use. Current devices will read 0 for
this bit location. It is recommended to mask out the reserved bit when testing the Status Register.
Doing this will ensure compatibility with future devices.
WPDIS bit. The Write Protect disable (WPDIS) bit, non-volatile bit, when it is reset to “0” (factory
default) to enable WP# function or is set to “1” to disable WP# function (can be floating during SPI
mode.)
SRP bit / OTP_LOCK bit. The Status Register Protect (SRP) bit operates in conjunction with the Write
Protect (WP#) signal. The Status Register Write Protect (SRP) bit and Write Protect (WP#) signal allow
the device to be put in the Hardware Protected mode (when the Status Register Protect (SRP) bit is set
to 1, and Write Protect (WP#) is driven Low). In this mode, the non-volatile bits of the Status Register
(SRP, BP2, BP1, BP0) become read-only bits and the Write Status Register (WRSR) instruction is no
longer accepted for execution.
In OTP mode, this bit serves as OTP_LOCK bit, user can read/program/erase OTP sector as normal
sector while OTP_LOCK bit value is equal 0, after OTP_LOCK bit is programmed with 1 by WRSR
command, the OTP sector is protected from program and erase operation. The OTP_LOCK bit can only
be programmed once.
Note : In OTP mode, the WRSR command will ignore any input data and program OTP_LOCK bit to 1,
user must clear the protect bits before enter OTP mode and program the OTP code, then execute
WRSR command to lock the OTP sector before leaving OTP mode.
Write Status Register (WRSR) (01h)

The Write Status Register (WRSR) instruction allows new values to be written to the Status Register.
Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write
Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (CS#) Low, followed by
the instruction code and the data byte on Serial Data Input (DI).
The instruction sequence is shown in Figure 9. The Write Status Register (WRSR) instruction has no
effect on S5, S1 and S0 of the Status Register. S5 is always read as 0. Chip Select (CS#) must be
driven High after the eighth bit of the data byte has been latched in. If not, the Write Status Register
(WRSR) instruction is not executed. As soon as Chip Select (CS#) is driven High, the self-timed Write
Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in
progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it
is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the Block Protect
(BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in
Table 3. The Write Status Register (WRSR) instruction also allows the user to set or reset the Status
Register Protect (SRP) bit in accordance with the Write Protect (WP#) signal. The Status Register
Protect (SRP) bit and Write Protect (WP#) signal allow the device to be put in the Hardware Protected
Mode (HPM). The Write Status Register (WRSR) instruction is not executed once the Hardware
Protected Mode (HPM) is entered.
NOTE : In the OTP mode, WRSR command will ignore input data and program OTP_LOCK bit to 1.
EN25Q40
Figure 9. Write Status Register Instruction Sequence Diagram
Figure 9.1 Write Status Register Instruction Sequence under EQIO Mode
Read Data Bytes (READ) (03h)

The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the
rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial
Data Output (DO), each bit being shifted out, at a maximum frequency fR, during the falling edge of
Serial Clock (CLK).
The instruction sequence is shown in Figure 10. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When
the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
EN25Q40
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (CS#) High. Chip Select
(CS#) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction,
while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the
cycle that is in progress.
Figure 10. Read Data Instruction Sequence Diagram
Read Data Bytes at Higher Speed (FAST_READ) (0Bh)

The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the rising edge of Serial Clock (CLK). Then the memory
contents, at that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a
maximum frequency FR, during the falling edge of Serial Clock (CLK).
The instruction sequence is shown in Figure 11. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
The whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select
(CS#) High. Chip Select (CS#) can be driven High at any time during data output. Any Read Data Bytes
at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
EN25Q40
Figure 11. Fast Read Instruction Sequence Diagram
Figure 11.1 Fast Read Instruction Sequence under EQIO Mode
EN25Q40
Dual Output Fast Read (3Bh)
The Dual Output Fast Read (3Bh) is similar to the standard Fast Read (0Bh) instruction except that
data is output on two pins, DQ0 and DQ1, instead of just DQ0. This allows data to be transferred from
the EN25Q40 at twice the rate of standard SPI devices. The Dual Output Fast Read instruction is ideal
for quickly downloading code from to RAM upon power-up or for applications that cache code-
segments to RAM for execution.
Similar to the Fast Read instruction, the Dual Output Fast Read instruction can operation at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy clocks after the 24-bit address as shown in figure 12. The dummy clocks allow the device’s
internal circuits additional time for setting up the initial address. The input data during the dummy clock
is “don’t care”. However, the DI pin should be high-impedance prior to the falling edge of the first data
out clock.
Figure 12. Dual Output Fast Read Instruction Sequence Diagram
EN25Q40
Dual Input / Output FAST_READ (BBh)
The Dual I/O Fast Read (BBh) instruction allows for improved random access while maintaining two IO
pins, DQ0 and DQ1. It is similar to the Dual Output Fast Read (3Bh) instruction but with the capability to
input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
The Dual I/O Fast Read instruction enable double throughput of Serial Flash in read mode. The
address is latched on rising edge of CLK, and data of every two bits (interleave 2 I/O pins) shift out on
the falling edge of CLK at a maximum frequency. The first address can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole
memory can be read out at a single Dual I/O Fast Read instruction. The address counter rolls over to 0
when the highest address has been reached. Once writing Dual I/O Fast Read instruction, the following
address/dummy/data out will perform as 2-bit instead of previous 1-bit, as shown in Figure 13.
Figure 13. Dual Input / Output Fast Read Instruction Sequence Diagram
EN25Q40
Quad Input / Output FAST_READ (EBh)
The Quad Input/Output FAST_READ (EBh) instruction is similar to the Dual I/O Fast Read (BBh)
instruction except that address and data bits are input and output through four pins. DQ0, DQ1, DQ2 and
DQ3 and four Dummy clocks are required prior to the data output. The Quad I/O dramatically reduces
instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI.
The Quad Input/Output FAST_READ (EBh) instruction enable quad throughput of Serial Flash in read
mode. The address is latching on rising edge of CLK, and data of every four bits (interleave on 4 I/O
pins) shift our on the falling edge of CLK at a maximum frequency FR. The first address can be any
location. The address is automatically increased to the next higher address after each byte data is
shifted out, so the whole memory can be read out at a single Quad Input/Output FAST_READ
instruction. The address counter rolls over to 0 when the highest address has been reached. Once
writing Quad Input/Output FAST_READ instruction, the following address/dummy/data out will perform
as 4-bit instead of previous 1-bit.
The sequence of issuing Quad Input/Output FAST_READ (EBh) instruction is: CS# goes low ->
sending Quad Input/Output FAST_READ (EBh) instruction -> 24-bit address interleave on DQ3, DQ2,
DQ1 and DQ0 -> 6 dummy cycles -> data out interleave on DQ3, DQ2, DQ1 and DQ0 -> to end Quad
Input/Output FAST_READ (EBh) operation can use CS# to high at any time during data out, as shown
in Figure 14.
Figure 14. Quad Input / Output Fast Read Instruction Sequence Diagram
EN25Q40
Figure 14.1. Quad Input / Output Fast Read Instruction Sequence under EQIO Mode
Another sequence of issuing Quad Input/Output FAST_READ (EBh) instruction especially useful in
random access is : CS# goes low -> sending Quad Input/Output FAST_READ (EBh) instruction -> 24-
bit address interleave on DQ3, DQ2, DQ1 and DQ0 -> performance enhance toggling bit P[7:0] -> 4
dummy cycles -> data out interleave on DQ3, DQ2, DQ1 and DQ0 till CS# goes high -> CS# goes low
(reduce Quad Input/Output FAST_READ (EBh) instruction) -> 24-bit random access address, as shown
in Figure 15.
In the performance – enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0] = A5h, 5Ah,
F0h or 0Fh can make this mode continue and reduce the next Quad Input/Output FAST_READ (EBh)
instruction. Once P[7:4] is no longer toggling with P[3:0] ; likewise P[7:0] = FFh, 00h, AAh or 55h. And
afterwards CS# is raised, the system then will escape from performance enhance mode and return to
normal operation.
While Program/ Erase/ Write Status Register is in progress, Quad Input/Output FAST_READ (EBh)
instruction is rejected without impact on the Program/ Erase/ Write Status Register current cycle.
EN25Q40
Figure 15. Quad Input/Output Fast Read Enhance Performance Mode Sequence Diagram
EN25Q40
Figure 15.1 Quad Input/Output Fast Read Enhance Performance Mode Sequence under EQIO Mode
EN25Q40
Page Program (PP) (02h)
The Page Program (PP) instruction allows bytes to be programmed in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least
significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the same page (from the address whose 8
least significant bits (A7-A0) are all zero). Chip Select (CS#) must be driven Low for the entire duration
of the sequence.
The instruction sequence is shown in Figure 16. If more than 256 bytes are sent to the device, pre-
viously latched data are discarded and the last 256 data bytes are guaranteed to be programmed cor-
rectly within the same page. If less than 256 Data bytes are sent to device, they are correctly pro-
grammed at the requested addresses without having any effects on the other bytes of the same page.
Chip Select (CS#) must be driven High after the eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Page Program cycle (whose duration is tPP)
is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page
Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,
the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3) is not executed.
Figure 16. Page Program Instruction Sequence Diagram
EN25Q40
Figure 16.1 Program Instruction Sequence under EQIO Mode
Sector Erase (SE) (20h)

The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see
Table 2) is a valid address for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low
for the entire duration of the sequence.
The instruction sequence is shown in Figure 17. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose du-
ration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector which is protected by the Block Protect (BP2, BP1,
EN25Q40
Figure 17. Sector Erase Instruction Sequence Diagram
Block Erase (BE) (D8h)

The Block Erase (BE) instruction sets to 1 (FFh) all bits inside the chosen block. Before it can be
The Block Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, and three address bytes on Serial Data Input (DI). Any address inside the Block (see
Table 2) is a valid address for the Block Erase (BE) instruction. Chip Select (CS#) must be driven Low
for the entire duration of the sequence.
bit of the last address byte has been latched in, otherwise the Block Erase (BE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Block Erase cycle (whose du-
ration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
A Block Erase (BE) instruction applied to a block which is protected by the Block Protect (BP2, BP1,
EN25Q40
Figure 18. Block Erase Instruction Sequence Diagram
Figure 18.1 Block/Sector Erase Instruction Sequence under EQIO Mode
EN25Q40
Chip Erase (CE) (C7h/60h)
The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Chip Erase (CE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
bit of the instruction code has been latched in, otherwise the Chip Erase instruction is not executed. As
soon as Chip Select (CS#) is driven High, the self-timed Chip Erase cycle (whose duration is tCE) is
initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
The Chip Erase (CE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are 0. The
Chip Erase (CE) instruction is ignored if one, or more blocks are protected.
Figure 19. Chip Erase Instruction Sequence Diagram
EN25Q40
Figure 19.1 Chip Erase Sequence under EQIO Mode
Deep Power-down (DP) (B9h)

Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest con-
sumption mode (the Deep Power-down mode). It can also be used as an extra software protection
mechanism, while the device is not in active use, since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (CS#) High deselects the device, and puts the device in the Standby mode (if there
is no internal cycle currently in progress). But this mode is not the Deep Power-down mode. The Deep
Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, to reduce
the standby current (from ICC1 to ICC2, as specified in Table 9.)
Once the device has entered the Deep Power-down mode, all instructions are ignored except the
Release from Deep Power-down and Read Device ID (RDI) instruction. This releases the device from
this mode. The Release from Deep Power-down and Read Device ID (RDI) instruction also allows the
Device ID of the device to be output on Serial Data Output (DO).
The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in
the Standby mode. The Deep Power-down (DP) instruction is entered by driving Chip Select (CS#) Low,
followed by the instruction code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the
entire duration of the sequence.
bit of the instruction code has been latched in, otherwise the Deep Power-down (DP) instruction is not
executed. As soon as Chip Select (CS#) is driven High, it requires a delay of tDP before the supply
current is reduced to ICC2 and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
EN25Q40
Figure 20. Deep Power-down Instruction Sequence Diagram
Release from Deep Power-down and Read Device ID (RDI)

Once the device has entered the Deep Power-down mode, all instructions are ignored except the
Release from Deep Power-down and Read Device ID (RDI) instruction. Executing this instruction takes
the device out of the Deep Power-down mode.
Please note that this is not the same as, or even a subset of, the JEDEC 16-bit Electronic Signature
that is read by the Read Identifier (RDID) instruction. The old-style Electronic Signature is supported for
reasons of backward compatibility, only, and should not be used for new designs. New designs should,
instead, make use of the JEDEC 16-bit Electronic Signature, and the Read Identifier (RDID) instruction.
When used only to release the device from the power-down state, the instruction is issued by driving
the CS# pin low, shifting the instruction code “ABh” and driving CS# high as shown in Figure 21. After
the time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device
ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in
Figure 22. The Device ID value for the EN25Q40 are listed in Table 5. The Device ID can be read
continuously. The instruction is completed by driving CS# high.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device
was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is
immediate. If the device was previously in the Deep Power-down mode, though, the transition to the
Standby Power mode is delayed by tRES2, and Chip Select (CS#) must remain High for at least tRES2
(max), as specified in Table 11. Once in the Stand-by Power mode, the device waits to be selected, so
that it can receive, decode and execute instructions.
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the
device, and can be applied even if the Deep Power-down mode has not been entered.
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in
progress.
EN25Q40
Figure 21. Release Power-down Instruction Sequence Diagram
Figure 22. Release Power-down / Device ID Instruction Sequence Diagram
Read Manufacturer / Device ID (90h)

The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device
ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device
ID instruction. The instruction is initiated by driving the CS# pin low and shifting the instruction code
“90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Eon (1Ch)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in Figure 23. The Device ID values for the EN25Q40 are listed in Table 5. If the 24-bit address is
initially set to 000001h the Device ID will be read first
EN25Q40
Figure 23. Read Manufacturer / Device ID Diagram
Figure 23.1. Read Manufacturer / Device ID Diagram under EQIO Mode

EN25Q40
Read Identification (RDID) (9Fh)
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be read,
followed by two bytes of device identification. The device identification indicates the memory type in the
first byte , and the memory capacity of the device in the second byte .
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not
decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) instruction
should not be issued while the device is in Deep Power down mode.
The device is first selected by driving Chip Select Low. Then, the 8-bit instruction code for the
instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory, being
shifted out on Serial Data Output , each bit being shifted out during the falling edge of Serial Clock .
The instruction sequence is shown in Figure 24. The Read Identification (RDID) instruction is
terminated by driving Chip Select High at any time during data output.
When Chip Select is driven High, the device is put in the Standby Power mode. Once in the Standby
Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.
Figure 24. Read Identification (RDID)
EN25Q40
Figure 24.1. Read Identification (RDID) under EQIO Mode
Enter OTP Mode (3Ah)

This Flash has an extra 256 bytes OTP sector, user must issue ENTER OTP MODE command to read,
program or erase OTP sector. After entering OTP mode, the OTP sector is mapping to sector 127, SRP
bit becomes OTP_LOCK bit and can be read with RDSR command. Program / Erase command will be
disabled when OTP_LOCK bit is ‘1’
WRSR command will ignore the input data and program OTP_LOCK bit to 1.
User must clear the protect bits before enter OTP mode.
OTP sector can only be program and erase before OTP_LOCK bit is set to ‘1’ and BP [2:0] = ‘000’. In
OTP mode, user can read other sectors, but program/erase other sectors only allowed when
OTP_LOCK bit equal to ‘0’.
User can use WRDI (04h) command to exit OTP mode.
Erase OTP Command (20h)

User can use Sector Erase (20h) command only to erase OTP data.
Table 7. OTP Sector Address
Sector Sector Size Address Range
127 256 byte 07F000h – 07F0FFh
Note: The OTP sector is mapping to sector 127
EN25Q40
Figure 25. Enter OTP Mode
Figure 25.1 Enter OTP Mode Sequence under EQIO Mode
EN25Q40
Power-up Timing
Figure 26. Power-up Timing
Table 8. Power-Up Timing and Write Inhibit Threshold

Symbol Parameter Min. Max. Unit
tVSL(1) VCC(min) to CS# low 10 µs
tPUW(1) Time delay to Write instruction 1 10 ms
VWI(1) Write Inhibit Voltage 1 2.5 V
Note:
1.The parameters are characterized only.
2. VCC (max.) is 3.6V and VCC (min.) is 2.7V
INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh).
The Status Register contains 00h (all Status Register bits are 0).
EN25Q40
Table 9. DC Characteristics
(Ta = - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol Parameter Test Conditions Min. Max. Unit
ILI Input Leakage Current ±2 µA

ILO Output Leakage Current ±2 µA
ICC1 Standby Current CS# = VCC, VIN = VSS or VCC 20 µA
ICC2 Deep Power-down Current CS# = VCC, VIN = VSS or VCC 20 µA
CLK = 0.1 VCC / 0.9 VCC at
25 mA
100MHz, DQ = open
ICC3 Operating Current (READ)
CLK = 0.1 VCC / 0.9 VCC at
20 mA
80MHz, DQ = open
ICC4 Operating Current (PP) CS# = VCC 28 mA
ICC5 Operating Current (WRSR) CS# = VCC 18 mA
ICC6 Operating Current (SE) CS# = VCC 25 mA
ICC7 Operating Current (BE) CS# = VCC 25 mA
VIL Input Low Voltage – 0.5 0.2 VCC V
VIH Input High Voltage 0.7VCC VCC+0.4 V
VOL Output Low Voltage IOL = 1.6 mA 0.4 V
VOH Output High Voltage IOH = –100 µA VCC-0.2 V
Table 10. AC Measurement Conditions

Symbol Parameter Min. Max. Unit
CL Load Capacitance 20/30 pF
Input Rise and Fall Times 5 ns
Input Pulse Voltages 0.2VCC to 0.8VCC V
Input Timing Reference Voltages 0.3VCC to 0.7VCC V
Output Timing Reference Voltages VCC / 2 V

Notes:
1. CL = 20 pF when CLK=100MHz, CL = 30 pF when CLK = 80MHz,
Figure 27. AC Measurement I/O Waveform
EN25Q40
Table 11. AC Characteristics
(Ta = - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol Alt Parameter Min Typ Max Unit
Serial Clock Frequency for:
FAST_READ, PP, SE, BE, DP, RES, WREN, D.C. 100 MHz
FR fC WRDI, WRSR
Serial Clock Frequency for:
D.C. 80 MHz
Dual Output Fast Read and Quad I/O Fast Read
fR Serial Clock Frequency for READ, RDSR, RDID D.C. 50 MHz
tCH 1 Serial Clock High Time 4 ns
tCL1 Serial Clock Low Time 4 ns
tCLCH2 Serial Clock Rise Time (Slew Rate) 0.1 V / ns
tCHCL 2 Serial Clock Fall Time (Slew Rate) 0.1 V / ns
tSLCH tCSS CS# Active Setup Time 5 ns
tCHSH CS# Active Hold Time 5 ns
tSHCH CS# Not Active Setup Time 5 ns
tCHSL CS# Not Active Hold Time 5 ns
tSHSL tCSH CS# High Time 100 ns
tSHQZ 2 tDIS Output Disable Time 6 ns
tCLQX tHO Output Hold Time 0 ns
tDVCH tDSU Data In Setup Time 2 ns
tCHDX tDH Data In Hold Time 5 ns
tCLQV tV Output Valid from CLK 8 ns
tWHSL3 Write Protect Setup Time before CS# Low 20 ns
tSHWL3 Write Protect Hold Time after CS# High 100 ns
tDP 2 CS# High to Deep Power-down Mode 3 µs
tRES1 2 CS# High to Standby Mode without Electronic

3 µs
Signature read
tRES2 2 CS# High to Standby Mode with Electronic
1.8 µs
Signature read
tW Write Status Register Cycle Time 10 15 ms
tPP Page Programming Time 1.3 5 ms
tSE Sector Erase Time 0.09 0.3 s
tBE Block Erase Time 0.5 2 s
tCE Chip Erase Time 3.5 10 s
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write status Register instruction when Status Register Protect Bit is set at 1.
EN25Q40
Figure 28. Serial Output Timing
Figure 29. Input Timing
EN25Q40
ABSOLUTE MAXIMUM RATINGS
Stresses above the values so mentioned above may cause permanent damage to the device. These
values are for a stress rating only and do not imply that the device should be operated at conditions up
to or above these values. Exposure of the device to the maximum rating values for extended periods of
time may adversely affect the device reliability.
Parameter Value Unit

Storage Temperature -65 to +150 °C
Plastic Packages -65 to +125 °C
Output Short Circuit Current1 200 mA
Input and Output Voltage

-0.5 to +4.0 V
(with respect to ground) 2
Vcc -0.5 to +4.0 V
Notes:
1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for periods of
up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V.
During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below.
RECOMMENDED OPERATING RANGES 1

Parameter Value Unit
Ambient Operating Temperature
°C
Industrial Devices -40 to 85
Operating Supply Voltage

Full: 2.7 to 3.6 V
Vcc
Notes:
1. Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc
+1.5V
Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform
EN25Q40
Table 12. DATA RETENTION and ENDURANCE
Parameter Description Test Conditions Min Unit

150°C 10 Years
Data Retention Time
125°C 20 Years
Erase/Program Endurance -40 to 85 °C 100k cycles
Table 13. CAPACITANCE
( VCC = 2.7-3.6V)
Parameter Symbol Parameter Description Test Setup Typ Max Unit
CIN Input Capacitance VIN = 0 6 pF
COUT Output Capacitance VOUT = 0 8 pF
Note : Sampled only, not 100% tested, at TA = 25°C and a frequency of 20MHz.
EN25Q40
PACKAGE MECHANICAL
Figure 30. SOP 8 ( 150 mil )
E1
b e
Detail A
Detail A
DIMENSION IN MM
SYMBOL
MIN. NOR MAX
A 1.35 --- 1.75
A1 0.10 --- 0.25
A2 --- --- 1.50
D 4.80 --- 5.00
E 5.80 --- 6.20
E1 3.80 --- 4.00
e --- 1.27 ---
b 0.33 --- 0.51
L 0.4 --- 1.27
0 0
θ 0 --- 8
Note : 1. Coplanarity: 0.1 mm
2. Max. allowable mold flash is 0.15 mm
at the pkg ends, 0.25 mm between leads.
EN25Q40
Figure 31. VDFN8 ( 5x6mm )
Controlling dimensions are in millimeters (mm).

DIMENSION IN MM
SYMBOL
MIN. NOR MAX
A 0.70 0.75 0.80
A1 0.00 0.02 0.04
A2 --- 0.20 ---
D 5.90 6.00 6.10
E 4.90 5.00 5.10
D2 3.30 3.40 3.50
E2 3.90 4.00 4.10
e --- 1.27 ---
b 0.35 0.40 0.45
L 0.55 0.60 0.65
Note : 1. Coplanarity: 0.1 mm
EN25Q40
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
same as that of Eon delivered before. Please be advised with the change and appreciate your
kindly cooperation and fully support Eon’s product family.
Eon products’ Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code: XXXXX
For More Information

Please contact your local sales office for additional information about Eon memory solutions.
EN25Q40
ORDERING INFORMATION
EN25Q40 - 100 G I P
PACKAGING CONTENT
P = RoHS compliant
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
PACKAGE
G = 8-pin 150mil SOP
W = 8-pin VDFN
SPEED
100 = 100 Mhz
BASE PART NUMBER

EN = Eon Silicon Solution Inc.
25Q = 3V Serial Flash with 4KB Uniform-Sector,
Dual and Quad I/O
40 = 4 Megabit (512K x 8)
EN25Q40
Revisions List
Revision No Description Date

A Initial Release 2009/04/06
1. Update Page program, Sector, Block and Chip erase time (typ.)
parameter on page 1 and 39.
(1). Block erase: from 0.4s to 0.5s
(2). Chip erase: from 2s to 3.5s
2. Update the Protected Area Sizes definition of BP2、BP1 and BP0
in table 3 on page 8.
3. Add the description of OTP erase command on page 9 and page 35.
4. Add Figure 6.1 Write Enable/Disable Instruction Sequence under EQIO
Mode on page 13.
5. Add Figure 7.1 Read Status Register Instruction Sequence under
EQIO Mode on page 14.
6. Add Figure 8.1 Write Status Register Instruction Sequence under
7. Add Figure 10.1 Fast Read Instruction Sequence under EQIO Mode on
page 18.
B 8. Add Figure 13.1. Quad Input / Output Fast Read Instruction Sequence 2009/07/21
under EQIO Mode on page 22.
9. Add Figure 14.1 Quad Input/Output Fast Read Enhance Performance
Mode Sequence under EQIO Mode on page 24.
10. Add Figure 15.1 Program Instruction Sequence under EQIO Mode on
page 26.
11. Add Figure 17.1 Block/Sector Erase Instruction Sequence under
12. Add Figure 18.1 Chip Erase Sequence under EQIO Mode on page
30.
13. Add Figure 22.1. Read Manufacturer / Device ID Diagram under
EQIO Add Mode on page 33.
14. Add Figure 23.1. Read Identification (RDID) under EQIO Mode on
page 35.
15. Add Figure 24.1 Enter OTP Mode Sequence under EQIO Mode on
page 36.
1. Add Figure 4. Quad SPI Modes on page 7.
2. Modify Table 9. DC Characteristics ICC1 (Standby) and ICC2 (Deep
C 2009/10/13
Power-down) Current from 5µA to 20µA on page 39.
3. Remove 8 pins SOP 200mil and 8 pins PDIP package option.

Features: or Modifications Due To Changes in Technical Specifications. Rev. C, Issue Date: 2009/10/13

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EN25Q40

• Single power supply operation • Software and Hardware Write Protection:

WP# (DQ2) 3 6 CLK

Symbol Pin Name

Table 2. Uniform Block Sector Architecture (Continued)

Block Sector Address range

Standard SPI Modes

Figure 3. SPI Modes

Dual SPI Instruction

Quad SPI Instruction

Status Register Memory Content

Instruction Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 n-Bytes

Instruction Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 n-Bytes

2. Dual Input Address

4. Quad Input Address

5. Quad I/O Fast Read Data

OP Code (M7-M0) (ID15-ID0) (ID7-ID0)

90h 1Ch 12h

9Fh 1Ch 3013h

Enable Quad I/O (EQIO) (38h)

Figure 5. Enable Quad I/O Sequence Diagram

Reset Quad I/O (RSTQIO) (FFh)

Figure 6. Write Enable Instruction Sequence Diagram

Write Disable (WRDI) (04h)

Figure 7. Write Disable Instruction Sequence Diagram

Figure 7.1 Write Enable/Disable Instruction Sequence under EQIO Mode

Read Status Register (RDSR) (05h)

Figure 8. Read Status Register Instruction Sequence Diagram

Table 6. Status Register Bit Locations

Write Status Register (WRSR) (01h)

Figure 9. Write Status Register Instruction Sequence Diagram

Read Data Bytes (READ) (03h)

Figure 10. Read Data Instruction Sequence Diagram

Read Data Bytes at Higher Speed (FAST_READ) (0Bh)

Figure 11. Fast Read Instruction Sequence Diagram

Figure 11.1 Fast Read Instruction Sequence under EQIO Mode

Figure 12. Dual Output Fast Read Instruction Sequence Diagram

Figure 16. Page Program Instruction Sequence Diagram

Figure 16.1 Program Instruction Sequence under EQIO Mode

Sector Erase (SE) (20h)

Figure 17. Sector Erase Instruction Sequence Diagram

Block Erase (BE) (D8h)

Figure 18. Block Erase Instruction Sequence Diagram

Figure 18.1 Block/Sector Erase Instruction Sequence under EQIO Mode

Figure 19. Chip Erase Instruction Sequence Diagram

Figure 19.1 Chip Erase Sequence under EQIO Mode

Deep Power-down (DP) (B9h)

Figure 20. Deep Power-down Instruction Sequence Diagram

Release from Deep Power-down and Read Device ID (RDI)

Figure 21. Release Power-down Instruction Sequence Diagram

Figure 22. Release Power-down / Device ID Instruction Sequence Diagram

Read Manufacturer / Device ID (90h)

Figure 23. Read Manufacturer / Device ID Diagram

Figure 23.1. Read Manufacturer / Device ID Diagram under EQIO Mode

Figure 24. Read Identification (RDID)

Figure 24.1. Read Identification (RDID) under EQIO Mode

Enter OTP Mode (3Ah)

Erase OTP Command (20h)