S9014

NPN SMD Transistor

Features Package outline

• Collector current. (100mA) SOT-23
• Pb-Free package is available
• Suffix "-H" indicates Halogen-free part, ex. S9014-H.

0.040 (1.02)
0.035 (0.89)

0.020 (0.50)
0.015 (0.37)
0.120 (3.04)
0.110 (2.80)
.081(2.04)

.070(1.78)
(B) (C)

Mechanical data (A)

• Epoxy:UL94-V0 rated flame retardant 0.055 (1.40) 0.027 (0.69)

• Case : Molded plastic, SOT-23 0.047 (1.20)
0.104 (2.64)
0.014 (0.35)

• Terminals : Solder plated, solderable per 0.083 (2.10)

.0034 (0.085)
.0070 (0.177)
MIL-STD-750, Method 2026
• Mounting Position : Any 0.044 (1.11)
0.035 (0.89)
• Weight : Approximated 0.008 gram

Dimensions in inches and (millimeters)

Maximum ratings (AT T =25 C unless otherwise noted)

A
o

Rating Symbol Value Unit

Collector-emitter voltage V CEO 45 V
Collector-base voltage V CBO 50 V
Emitter-base voltage V EBO 5 V
Collector current -continuous IC 100 mA

Thermal characteristics
PARAMETER Symbol MIN. TYP. MAX. UNIT
O
Total device dissipation FR-5 board T A = 25 C PD 225 mW
(1) mW/ OC
Derate above 25 OC 1.8
O
Thermal resistance Junction to ambient R θJA 556 C/W
Total device dissipation alumina O
T A = 25 C PD 300 mW
substrate(2)
Derate above 25 C O
2.4 mW/ OC
O
Thermal resistance Junction to ambient R θJA 417 C/W
Operating junction temperature range TJ -55 +150 o
C
Storage temperature range T STG -55 +150 o
C
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

http://www.anbonsemi.com
Document ID Issued Date Revised Date Revision Page.
TEL:886-755-23776891
FAX:886-755-81482182
Page 1 AS-3140031 2003/03/08 2012/05/16 D 4
 S9014
NPN SMD Transistor

Electrical characteristics (At T =25 C unless otherwise noted)

A
o

PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT

Off characteristics
Collector-emitter breakdown voltage I C=1mA V (BR)CEO 45 V
Emitter-base breakdown voltage I E= 100uA V (BR)EBO 5 V
Collector-base breakdown voltage I C= 100uA V (BR)CBO 50 V
Collector cutoff current V CB= 40V I CBO 100 nA
Emitter cutoff current V EB= 3V I EBO 100 nA

On characteristics
Collector-emitter saturation voltage I C = 100mA I B = 5mA V CE(sat) 0.3 V
DC current gain I C =1mA V CE = 5V h FE 200 1 000 -

h FE values are classified as follows:

RANK L H
RANGE 200~450 450 ~1000

http://www.anbonsemi.com
Document ID Issued Date Revised Date Revision Page.
TEL:886-755-23776891
FAX:886-755-81482182
Page 2 AS-3140031 2003/03/08 2012/05/16 D 4
 S9014
NPN SMD Transistor

Rating and characteristic curves (S9014 )

FIG.1 - STATIC CHARACTERISTIC FIG.2 - DC CURRENT GAIN

100
1000
90
IC (mA), COLLECTOR CURRENT

IB=160uA 600

hFE, DC CURRENT GAIN

80 IB=140uA VCE=-6V
70 IB=120uA 300
IB=100uA
60
IB=80uA
50 100
IB=60uA
40
30 50
IB=40uA
20 30
IB=20uA
10
0 10
0 10 20 30 40 50 1 3 5 10 30 50 100 300 1000
VCE(V), COLLECTOR-EMITER VOLTAGE IC (mA), COLLECTOR CURRENT

FIG.3 - BASE-EMITTER SATURATION VOLTAGE FIG.4 - CURRENT GAIN-BANDWIDTH PRODUCT

COLLECTOR-EMITTER SATURATION VOLTAGE fT(MHz) ,CURRENT-GAIN-BANDWIDTH PRODUCT
1000 1000
600 VCE=-5V
500
hFE, DC CURRENT GAIN

300 VCE=5V
300
100

100
30

10

5 30
3
1 10
-0.1 -0.3 -1 -3 -10 -30 -100 0.1 0.3 1 3 10 30 100

IC (mA), COLLECTOR CURRENT IC (mA), COLLECTOR CURRENT

http://www.anbonsemi.com
Document ID Issued Date Revised Date Revision Page.
TEL:886-755-23776891
FAX:886-755-81482182
Page 3 AS-3140031 2003/03/08 2012/05/16 D 4
 S9014
NPN SMD Transistor

Pinning information

Pin Simplified outline Symbol

C
C
PinB Base
PinC Collector B
PinE Emitter
E
B E

Marking
Type number Marking code

S9014 J6

Suggested solder pad layout

SOT-23

0.037(0.95)

0.037(0.95)

0.079(2.0)

0.035(0.90)

0.031(0.80)

Dimensions in inches and (millimeters)

Reel packing
COMPONENT INNER REEL CARTON APPROX.
PACKAGE REEL SIZE REEL SPACING BOX BOX DIA, SIZE CARTON GROSS WEIGHT
(pcs) (m/m) (pcs) (m/m) (m/m) (m/m) (pcs) (kg)

SOT-23 7" 3,000 4.0 30,000 183*123*183 178 382*257*387 240,000 11.6

http://www.anbonsemi.com
Document ID Issued Date Revised Date Revision Page.
TEL:886-755-23776891
FAX:886-755-81482182
Page 4 AS-3140031 2003/03/08 2012/05/16 D 4