FDMS7692 N-Channel PowerTrench® MOSFET

August 2011

FDMS7692
N-Channel PowerTrench® MOSFET
30 V, 7.5 mΩ
Features General Description
„ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 13 A This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
„ Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or
„ Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers. It has been optimized
and high efficiency for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
„ Next generation enhanced body diode technology, engineered
for soft recovery. Applications
„ MSL1 robust package design „ IMVP Vcore Switching for Notebook
„ 100% UIL tested „ VRM Vcore Switching for Desktop and Server
„ RoHS Compliant „ OringFET / Load Switch
„ DC-DC Conversion

Top Bottom
Pin 1
S D 5 4 G
S
S
G D 6 3 S

D 7 2 S
D
D D 8 1 S
D
D

Power 56

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 28
-Continuous (Silicon limited) TC = 25 °C 47
ID A
-Continuous TA = 25 °C (Note 1a) 14
-Pulsed 50
EAS Single Pulse Avalanche Energy (Note 3) 21 mJ
Power Dissipation TC = 25 °C 27
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 4.6
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMS7692 FDMS7692 Power 56 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDMS7692 Rev.D1
 FDMS7692 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, referenced to 25 °C 13 mV/°C
ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 2.0 3.0 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = 250 μA, referenced to 25 °C -6 mV/°C
ΔTJ Temperature Coefficient
VGS = 10 V, ID = 13 A 6.5 7.5
rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 10 A 9.5 13 mΩ
VGS = 10 V, ID = 13 A, TJ = 125 °C 9.0 11
gFS Forward Transconductance VDS = 5 V, ID = 13 A 68 S

Dynamic Characteristics
Ciss Input Capacitance 1015 1350 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 325 435 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 45 65 pF
Rg Gate Resistance 1.0 2.0 Ω

Switching Characteristics
td(on) Turn-On Delay Time 8 16 ns
tr Rise Time VDD = 15 V, ID = 13 A, 2.7 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 17 31 ns
tf Fall Time 2.3 10 ns
Qg Total Gate Charge VGS = 0 V to 10 V 15 22 nC
Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, 7 10 nC
Qgs Gate to Source Charge ID = 13 A 3.4 nC
Qgd Gate to Drain “Miller” Charge 1.9 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = 2.1 A (Note 2) 0.75 1.1
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = 13 A (Note 2) 0.84 1.2
trr Reverse Recovery Time 21 34 ns
IF = 13 A, di/dt = 100 A/μs
Qrr Reverse Recovery Charge 6 12 nC
trr Reverse Recovery Time 17 31 ns
IF = 13 A, di/dt = 300 A/μs
Qrr Reverse Recovery Charge 12 21 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

a. 50 °C/W when mounted on a b. 125 °C/W when mounted on a

1 in2 pad of 2 oz copper. minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.

©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDMS7692 Rev.D1
 FDMS7692 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

50 10

DRAIN TO SOURCE ON-RESISTANCE

VGS = 10 V VGS = 3.0 V
40 8
VGS = 4.5 V
ID, DRAIN CURRENT (A)

PULSE DURATION = 80 μs
VGS = 4.0 V

NORMALIZED
DUTY CYCLE = 0.5% MAX
30 VGS = 3.5 V 6
VGS = 3.5 V

20 4
PULSE DURATION = 80 μs VGS = 4.0 V
DUTY CYCLE = 0.5% MAX
10 2
VGS = 3.0 V
VGS = 4. 5 V VGS = 10 V
0 0
0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 30
PULSE DURATION = 80 μs
DRAIN TO SOURCE ON-RESISTANCE

ID = 13 A ID = 13 A
SOURCE ON-RESISTANCE (mΩ)
1.5 DUTY CYCLE = 0.5% MAX
VGS = 10 V
25
1.4
rDS(on), DRAIN TO

1.3
NORMALIZED

20
1.2

1.1 15
TJ = 125 oC
1.0
10
0.9
TJ = 25 oC
0.8 5
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

50 100
PULSE DURATION = 80 μs
IS, REVERSE DRAIN CURRENT (A)

VGS = 0 V
DUTY CYCLE = 0.5% MAX
40
10
ID, DRAIN CURRENT (A)

VDS = 5 V

30 TJ = 150 oC

TJ = 150 oC 1
20 TJ = 25 oC
TJ = 25 oC
0.1
10
TJ = -55 oC
TJ = -55 oC

0 0.01
1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDMS7692 Rev.D1
 FDMS7692 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

10 2000
VGS, GATE TO SOURCE VOLTAGE (V)

ID = 13 A
1000
8 Ciss

CAPACITANCE (pF)
VDD = 15 V
6
VDD = 10 V VDD = 20 V Coss
100
4

2
Crss
f = 1 MHz
VGS = 0 V
0 10
0 4 8 12 16 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

50 50
IAS, AVALANCHE CURRENT (A)

40
ID, DRAIN CURRENT (A)

TJ = 25 oC
10 30
VGS = 10 V
TJ = 100 oC
20
Limited by Package VGS = 4.5 V
TJ = 125 oC
10
o
RθJC = 4.6 C/W
1 0
0.001 0.01 0.1 1 10 100 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

100 300
P(PK), PEAK TRANSIENT POWER (W)

VGS = 10 V SINGLE PULSE

100 RθJA = 125 oC/W
ID, DRAIN CURRENT (A)

10 TA = 25 oC
100 us

1 ms

1 10 ms
THIS AREA IS 10
LIMITED BY rDS(on) 100 ms

SINGLE PULSE 1s
0.1 TJ = MAX RATED
10 s
RθJA = 125 oC/W
o
DC 1
TA = 25 C
0.01 0.5
-4 -3 -2 -1
0.01 0.1 1 10 100 200 10 10 10 10 1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDMS7692 Rev.D1
 FDMS7692 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

2
1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJA

0.1
0.1 0.05
0.02 PDM
0.01

t1

0.01 t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
o PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 125 C/W

0.001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

Figure 15.
14

12

10

8
CURRENT (A)

di/dt = 300 A/μs

6

-2
0 20 40 60 80 100
TIME (ns)

Figure 14. Body Diode Reverse

Recovery Characteristics

©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDMS7692 Rev.D1
 FDMS7692 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout

©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDMS7692 Rev.D1
 FDMS7692 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™ FlashWriter® * PDP SPM™ The Power Franchise®
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Auto-SPM™ F-PFS™ PowerTrench® ®

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Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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Semiconductor. The datasheet is for reference information only.
Rev. I55

©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDMS7692 Rev.D1