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TYPE Editorial

PUBLISHED 02 March 2023


DOI 10.3389/fmech.2023.1142981

Editorial: Design and analysis of


OPEN ACCESS CMOS-MEMS transducers
EDITED AND REVIEWED BY
Juergen Brugger,
Swiss Federal Institute of Technology Anurag Zope 1 and Sheng-Shian Li 1,2*
Lausanne, Switzerland 1
Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan,
2
*CORRESPONDENCE Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu, Taiwan
Sheng-Shian Li,
ssli@mx.nthu.edu.tw
KEYWORDS
SPECIALTY SECTION
This article was submitted to Micro- and CMOS-MEMS, transducer, integration, sensor, actuator
Nanoelectromechanical Systems,
a section of the journal
Frontiers in Mechanical Engineering

RECEIVED 12 January 2023


ACCEPTED 21 February 2023 Editorial on the Research Topic
PUBLISHED 02 March 2023
Design and analysis of CMOS-MEMS transducers
CITATION
Zope A and Li S-S (2023), Editorial: Design
and analysis of CMOS-
MEMS transducers. Throughout human history, certain technologies/discoveries (e.g., fire, wheel,
Front. Mech. Eng 9:1142981.
agriculture, printing, etc.) have had an unparalleled effect on the lifestyle. Integrated
doi: 10.3389/fmech.2023.1142981
Circuit (IC) technology had an imitable impact on day-to-day lives in the late 20th
COPYRIGHT
century. The rapid growth in the performance of computation and its related
© 2023 Zope and Li. This is an open-
access article distributed under the terms applications was possible due to the regular shrinking of transistor size following
of the Creative Commons Attribution Moore’s law (Moore, 2006). There is a growing demand for low-power, high
License (CC BY). The use, distribution or
computation, high data rate, and wireless chips in industry, automobiles, hospitals,
reproduction in other forums is
permitted, provided the original author(s) homes, and personal devices. The recent semiconductor shortage due to the pandemic
and the copyright owner(s) are credited disrupted manufacturing directly affects the economy of many countries (Saracco, 2022).
and that the original publication in this
This has resulted in renewed interest in the acquisition of semiconductor technologies
journal is cited, in accordance with
accepted academic practice. No use, around the world. The pervasive adoption of 5G communication systems, electronic vehicles,
distribution or reproduction is permitted high-performance computing, virtual reality, and personal entertainment devices is
which does not comply with these terms.
constrained by the complex and expensive fabrication technology required to continue
device scaling with more-Moore (Yeric, 2016).
Microelectromechanical Systems (MEMS) have been used to realize complex
functions like sensors and actuators. MEMS can be combined with circuits to
provide more-than-Moore functionality. The technology scaling has resulted in
system-on-chip (SoC) which incorporates analog, digital, and RF circuits to satisfy
multiple applications (i.e., more-than-Moore). This was extended with MEMS to the
system-in-package (SiP) incorporating an accelerometer, gyroscope, barometer,
magnetometer, heart-rate sensors, etc., with SoC in a package (Lammel, 2015).
Traditionally, piezoelectric MEMS has seen greater interest due to the larger
electromechanical coupling coefficient and direct replacement with quartz systems.
Piezoelectric materials are not compatible with the CMOS fabrication process and
require SiP. This limits device performance due to the parasitic effect of inter-package
interconnects (Pillai et al., 2016). The fast data rate of modern SoC requires a small form
factor to reduce the parasitic effect from PCB routing. With the advent of the Internet of
Things (IoT), smart gadgets are needed to prevent congestion of the widely used 2.4 GHz
band. Smart devices can collect data and process it to give predictive analysis, e.g., fall
detection and call for assistance, warning about irregular heartbeats, increase in
particulate matter, etc. A Smart system-on-chip (S-SoC) is the next logical step. A
conceptual smart system on chip schematic for MEMS and circuit integration is depicted
in Figure 1. The S-SoC would have sensors for the detection of physical, chemical,
optical, and biological quantities. It would also have a MEMS transceiver integrated with

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Zope and Li 10.3389/fmech.2023.1142981

FIGURE 1
Conceptual CMOS-MEMS integration schematic of a monolithic Smart System-on-Chip (S-SoC) IC featuring MEMS sensors, actuators, and
transceiver with signal processing circuit.

a signal processing circuit and energy-harvesting MEMS for low- discusses the effect of circuit architecture and non-linear operation
power operation. The ability of a CMOS process for rapid on oscillator phase noise performance and the selection of an
prototyping, volume manufacturing, low cost, and compact optimal condition for improvement in oscillator phase noise. A
system (monolithic integration) makes them attractive MEMS-based switch capable of high isolation is in demand for
candidates for IoT. The Research Topic “Design and Analysis transceivers. Tsai and Li describe prior work done in CMOS-MEMS
of CMOS-MEMS Transducers” aims to highlight various switches and resonant switches (resoswitches) to improve sensitivity
transduction mechanisms, fabrication processes, and device and reliability. In addition, the use of resoswitches for the detection
architectures to meet diverse application specifications. of surface manipulation and pulse width modulators is also
Typically, CMOS-MEMS utilizes the material layer stack of the demonstrated.
standard CMOS technology node to realize microstructures and Electrothermal transduction is often used for flow sensing. A
selective etching to release them. One of the main reasons for the heater is maintained at a certain temperature. The flow of gas causes
silicon revolution was the access to a foundry (TSMC, heat loss through convection, resulting in a temperature change.
GlobalFoundries, UMC, etc., for fabless design houses. A similar This can be detected directly as temperature changes or by
initiative was implemented for MEMS with MUMPS but it lacks measuring the power required to maintain the constant
support for CMOS-MEMS. Taiwan Semiconductor Research temperature. Wang et al. present the analysis, design, and post-
Institute has worked with CMOS foundries to develop a multi- process release of the CMOS-MEMS nanoscale hot-wire flow sensor.
user MEMS platform through CMOS technology to support designs The piezoresistive effect of polysilicon can be combined with
targeting various applications using the 0.35 and 0.18 µm standard electrothermal transduction to realize a MEMS oscillator for
CMOS process. Tseng covers in detail the capabilities of the platform timing and sensing application. Zope and Li present a thermal-
and steps in the fabrication of MEMS using a standard CMOS piezoresistive resonator with in-depth analysis for design
process. optimization, an electrical model for co-simulation with interface
A variety of transduction techniques can be utilized for the circuit and experimental verification for a timing reference, mass
excitation and sensing of micromechanical designs. Capacitive and pressure sensing applications.
transduction is widely used in MEMS for accelerometers, The p-n junction can be used as an optical detector due to the
pressure sensors, frequency and timing references. Chiu et al. photoelectric effect. Lee et al. demonstrate a CMOS-MEMS gas
cover the working principle, design, and release of tunable sensor combining photodetection and temperature sensing with
CMOS-MEMS accelerometers with an interface circuit design. A heterogenous integration of the LED with a CMOS chip.
timing/frequency reference is an integral part of the IoT system SHF oscillators are crucial to enable a monolithic wireless S-SoC.
which can be served by a monolithic CMOS-MEMS oscillator. Li Rawat et al. cover the research done on unreleased resonant body

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Zope and Li 10.3389/fmech.2023.1142981

transistors to realize high-Q GHz resonators using the MOSFET as Conflict of interest
the resonant element. They also cover the use of piezoelectric and
ferroelectric layers in the CMOS memory platform for high- The authors declare that the research was conducted in the
efficiency RBTs. absence of any commercial or financial relationships that could be
In summary, this Research Topic offers a variety of designs, construed as a potential conflict of interest.
transduction mechanisms, fabrication approaches, measurements,
and potential applications using CMOS-MEMS integration, thus
hopefully inspiring more scholars, engineers, and scientists to get Publisher’s note
involved in this emerging field.
All claims expressed in this article are solely those of the authors and
do not necessarily represent those of their affiliated organizations, or
Author contributions those of the publisher, the editors and the reviewers. Any product that
may be evaluated in this article, or claim that may be made by its
AZ did the write up under S-SL’s guidance. manufacturer, is not guaranteed or endorsed by the publisher.

References
Yeric, G. (2016).“Moore’s law at 50: Are we planning for retirement?,” in 2015 IEEE Pillai, G., Zope, A. A., Tsai, J. M.-L., and Li, S.-S. (2016).“3-GHz BAW composite
International Electron Devices Meeting (IEDM), Washington, DC, USA, 7–9 December resonators integrated with CMOS in a single-chip configuration,” in 2016 IEEE
2015, 1.1.1–1.1.8. doi:10.1109/IEDM.2015.7409607 International Frequency Control Symposium (IFCS), 1–4. doi:10.1109/FCS.2016.
7563593
Lammel, G. (2015). “The future of MEMS sensors in our connected world,” in 2015
28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Saracco, R. (2022). “Chip shortage: A tangled web – III,” IEEE future directions,
Estoril, Portugal, 18-22 January 2015, 61–64. doi:10.1109/MEMSYS.2015.7050886 25 november. Available at: https://cmte.ieee.org/futuredirections/2022/11/25/chip-
shortage-a-tangled-web-iii/(Accessed December 12, 2022).
Moore, G. E. (2006). Cramming more components onto integrated circuits. IEEE
Solid-State Circuits Soc. Newsl. 11 (3), 33–35. doi:10.1109/N-SSC.2006.4785860

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