INDUSTRIAL ELECTRONICS (04/15/23)—PM Session

THE APPLICATION OF ELECTRONICS IN INDUSTRIAL OPERATION AND CONTROL

1. Family of devices that are constructed with four semiconductor layers.

a. Thyrectors
b. Thyristors
c. Shockley diode
d. SCR

2. A two terminal pnpn device that acts as a switch and remains off until the forward voltage reaches a certain value
and conducts.
a. Schottky Diode
b. Tunnel diode
c. Shockley diode
d. All of these

3. Who invented Shockley Diode?

a. William Shockley
b. Albert Shockley
c. Wilhelm Shockley
d. George Shockley

4. Which of the following describes the construction of a Shockley diode?

a. pnp and npn transistors in cascade
b. pnp and npn transistors in tandem
c. both a and b
d. none of these

5. A region of forward bias in a Shockley diode having a very high forward resistance.
a. Break over resistance
b. Forward blocking region
c. Breakover region
d. Forward breakover region

6. The current at which the Shockley diode starts to conduct.

a. Starting current
b. Holding current
c. Forward current
d. Switching current

7. The maintaining current in a Shockley diode to keep it in its ON condition.

a. Maintaining current
b. Holding current
c. Forward current
d. Switching current

8. What happens to the current flow in a Shockley diode when the voltage is reduced from the point it starts
conducting?
a. The current increases linearly
b. The current increases exponentially
c. The current decreases linearly
d. The current is maintained
9. Which of the following may cause the Shockley diode to conduct?
a. Excessive voltage rise
b. Excessive magnetic field
c. Excessive electromagnetic field
d. All of the above

10. A circuit used to counteract the excessive voltage rise in a Shockley diode.
a. Bleeder
b. Gimmick
c. Snubber
d. All of these

11. A circuit used to filter out high frequency from a Shockley diode that may cause it to conduct.
a. Series inductor
b. Parallel inductor
c. Series RC
d. Parallel RLC

12. The low current dropout threshold in a Shockley diode is the same as
a. Maintaining current
b. Holding current
c. Forward current
d. Switching current

13. When a Shockley diode is equipped with another means of latching, making it a true amplifying device in an
ON/OF mode, it becomes a___.
a. Triac
b. Diac
c. SCR
d. SCS

14. The gate in an SCR is connected to which part of its pnpn structure?
a. Outer N type
b. Outer P type
c. Inner N type
d. Inner P type

15. When the gate current is zero, the SCR acts like____ .
a. Shockley diode in the off state
b. A dropout transistor
c. Both a and b
d. None of these

16. What will turn ON an SCR?

a. A trigger applied to the gate
b. Applying a sufficient amount of forward voltage
c. Exceeding the critical rate of voltage rise
d. All of these
17. The trigger applied in the gate of an SCR should be__.
a. Positive with respect to the anode
b. Positive with respect to the cathode
c. Negative with respect to the anode
d. Negative with respect to the cathode

18. The maximum reverse bias voltage that causes the SCR to break into the avalanche region.
a. Reverse breakdown voltage
b. Reverse breakover voltage
c. Reverse blocking voltage
d. All of the above

19. The value of the anode current below which the SCR switches from its ON to OFF state.
a. Maintaining current
b. Holding current
c. Gate trigger current
d. Switching current

20. The gate current necessary to switch the SCR from its OFF to ON state.
a. Maintaining current
b. Holding current
c. Gate trigger current
d. Switching current

21. What are the two basic methods of turning OFF an SCR?
a. Anode current interruption and forced commutation
b. Gate current interruption and forced commutation
c. Anode current interruption and gate current interruption
d. Anode and gate current interruption and forced commutation

22. Forced commutation in an SCR means__.

a. Forcing a current in the gate in the reverse direction
b. Forcing a current in the anode in the reverse direction
c. Forcing the current in the gate to , increase heavily
d. Forcing the current in the anode to increase heavily

23. What constitute the forced commutation circuit in an SCR?

a. A diode in parallel to the SCR
b. A diode in series with the SCR
c. A switching transistor in parallel to the SCR
d. A switching transistor and a battery in parallel with the SCR

24. The turn-off time of an SCR is about__.

a. Tens of milliseconds to tenths of a second
b. Few millisecond to 3 seconds
c. 5 microseconds to 30 microseconds
d. 30 microseconds to a 5 milliseconds
25. A semiconductor device similar to the SCR with two gate terminals.
a. Dual-gated SCR
b. Silicon Bilateral Switch
c. Silicon Controlled Switch
d. Bipolar Trigger SCR

26. Which of the following is true about the gates of an SCS?

a. Both gates are used only to turn-on the SCS
b. Both gates are used only to turn-off the SCS
c. Both gates can be used to turn-on k and turn-off the SCS
d. SCS has only one gate

27. An SCS can be turned ON by ___.

a. Applying only a positive pulse on the anode gate
b. Applying only a negative pulse on the anode gate
c. Applying either positive or negative pulse on the anode gate
d. SCS has no anode gate

28. Which of the following is true about an SCS?

a. SCS has three terminals
b. SCS can be turned ON by applying a sufficient forward bias voltage
c. Both are true
d. None of these is true

29. An SCS can be turned OFF by__.

a. Applying only a positive pulse on the cathode gate
b. Applying only a negative pulse on the cathode gate
c. Applying either positive or negative pulse on the cathode gate
d. SCS has no cathode gate

30. What is the advantage of an SCS over an SCR?

a. More rugged in construction
b. More power handling capability
c. Reduced noise
d. Reduced turn-off time

31. What is the turn-off time of an SCS?

a. 1 to 10 milliseconds
b. 10 to 100 milliseconds
c. 1 to 10 microseconds
d. 10 to 100 microseconds

32. Which of the following is an advantage of an SCS over an SCR?

a. Increased control and triggering sensitivity
b. More predictable firing situation
c. Both a and b
d. None of these

33. A three-terminal pnpn device capable of being turned on and off by applying a proper pulse to its gate.
a. GTO
b. SCS
c. SCR
d. Triac
34. GTO is a type of a thyristor. It stands for__.
a. Gate Turn Off Switch
b. Gate-Triggered Offset Switch
c. Gate-Time Out
d. Go To my Office

35. The gate terminal in a GTO is connected to which part of its pnpn structure? a. Outer N type b. Outer P type c.
Inner N type d. Inner P type 36. To turn ON a GTO, ___.
a. Apply a positive pulse to its gate
b. Apply a negative pulse to its gate
c. Both a and b
d. None of these

37. Which of the following is true about an SCR and a GTO? a. They have about the same switch-on time b. GTO has a
smaller turn-off time than an SCR c. Both are true d. None of these is true 38. The turn-off time of a GTO.
a. 1 microsecond
b. 2 microsecond
c. 5 microsecond
d. 10 microsecond

39. A pnpn,device whose state is controlled by the light falling upon its silicon semiconductor layer.
a. LASCR
b. LASER diode
c. Photo diode
d. All of these

40. LASCR stands for

a. Light Sensitive SCR
b. Light Activated SCR
c. Light Amplification by SCR
d. Light Amplification by Stimulated Cross Radiation

41. LASCR can be turned on by __.

a. Exposing the device to a sufficient amount of light
b. Applying a pulse to its gate
c. Both a and b
d. None of these

42. LASCR is most sensitive to light when__.

a. The gate is open
b. The gate has a trigger current
c. The gate has a series resistor
d. The gate has a series capacitor

43. A two-terminal parallel inverse combination of semiconductor layers that permits triggering in either direction.
a. Shockley diode
b. Dual polarity diode
c. Diac
d. skottkey diode
44. A device containing an anode and a cathode or a pn junction of a semiconductor as the principal elements and
provides unidirectional conduction.
a. diode
b. diac
c. triode
d. triac

45. One of the electronic semiconductor devices known as diac, function as

a. Four terminal multi-directional switch
b. Two terminal bi-directional switch
c. Two terminal unidirectional switch
d. Three terminal bi-directional switch

46. This is also considered as an ac diode.

a. Shockley diode
b. thyrector
c. thyristor
d. diac

47. A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon
controlled rectifier (SCR).
a. Shockley diode
b. thyrector
c. Schottky diode
d. diac

48. A silicon diode that exhibits a very high resistance in both directions up to certain voltage, beyond which the unit
switches to a low-resistance conducting state. It can be viewed as two zener diodes connected back-to-back in
series.
a. bizener diode
b. diac
c. thyristor
d. thyrector

49. Semiconductor devices equivalent to thyratrons are generally called

a. thyrector
b. thyristor
c. diac
d. ignitron

50. Thyristor whose characteristic curve closely resembles that of SCRs and SUSs, except that its forward breakover
voltage (+VBO) is not alterable, for the device has no gate terminal.
a. diac
b. thyrector
c. UJT
d. Shockley diode

51. In selecting thyristors for a particular application, which of the statement below is generally desirable?
a. thyristors with high current and voltage ratings
b. thyristors with high holding current/voltage
c. faster thyristors
d. thyristors with high breakbackvoltage
52. A pnpn device similar to two Shockley diodes turned in opposite directions.
a. Diac
b. Triac
c. SCS
d. SBS

53. Which of the following is an application of the diac?

a. Phase control
b. Relay
c. DIACs are almost never used alone, but in conjunction with other thyristor devices
d. All of these

54. A thyristor device which is essentially a diac with a gate.

a. Thyratrons
b. Thyristors
c. Triac
d. Transistor

55. A pnpn device which is essentia y two SCRs connected in parallel and in opposite direction with a common gate
terminal.
a. Thyratrons
b. Thyristors
c. Triac
d. Transistor

56. A UJT has an internal resistances of RB1 = 6kΩ and RB2 = 3kΩ, what is its interbase resistance?
a. 2 kΩ
b. 3 kΩ
c. 6 kΩ
d. 9 kΩ

57. Which of the following is not a thyristor?

a. SCR
b. GTO
c. UJT
d. None of these

58. A UJT has how many pn junctions?

a. 1
b. 2
c. 3
d. 4

59. The internal dynamic resistance between the emitter and basel of a UJT varies with the emitter current.
a. Directly
b. Inversely
c. Proportionally
d. Constantly
60. The sum of the internal dynamic resistances between the emitter and basel and the emitter and base2 of a UJT is
called__.
a. Dynamic UJT resistance
b. Interbase resistance
c. Stand-off resistance
d. All of these

61. After the UJT turns on, the emitter voltage decreases as the emitter current continues to increase. This region of
operation is called__.
a. Stand-off region
b. Forward conduction region
c. Reverse conduction region
d. Negative resistance region

62. The point at which the emitter voltage in a UJT increases very little with an increasing emitter current.
a. Knee point
b. Peak point
c. Valley point
d. Stand-off point

63. For a UJT with n=0.6, find the peak-point emitter voltage if VBB = 20V.
a. 12 V
b. 33.33 V
c. 12.7 V
d. 11.3 V

64. The area between basel and base2 in a UJT acts as what type of common circuit component?
a. Variable capacitor
b. Variable inductor
c. Variable resistor
d. Constant resistor

65. The sequential rise in the voltage between the two bases of the UJT is called__.
a. Rise time
b. Decay time
c. Voltage gradient
d. Charging

6. What is the normal current path in a UJT?

a. Base1 to emitter
b. Base1 to base2
c. Base2 to emitter
d. Base2 to base1

67. A type of thyristor that is used to replace UJT, but not similar to the UJT structure.
a. PUT
b. SCS
c. SCR
d. Triac
68. A device similar to an SCR except that the gate is connected to the inner N substrate.
a. UJT
b. Triac
c. Diac
d. PUT

69. What controls the ON and OFF state of the PUT?

a. The pn junction
b. The forward bias voltage
c. The reverse bias voltage
d. The reverse gate trigger

70. What turns ON a PUT?

a. The anode voltage exceeds the gate voltage by 0.7V
b. The gate voltage exceeds the anode voltage by 0.7V
c. A positive trigger on the gate
d. A negative trigger on the gate

71. The gate of a PUT can be biased to a desired voltage with ___.
a. An external diac trigger
b. The use of snubber circuit
c. A external voltage divider circuit
d. All of the above