Ina 181

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INA181, INA2181, INA4181

SBOS793G – APRIL 2017 – REVISED MAY 2020
INAx181 Bidirectional, Low- and High-Side Voltage Output,

Current-Sense Amplifiers
1 Features 3 Description
•
1 Common-mode range (VCM): –0.2 V to +26 V The INA181, INA2181, and INA4181 (INAx181)
current sense amplifiers are designed for cost-
• High bandwidth: 350 kHz (A1 devices) optimized applications. These devices are part of a
• Offset voltage: family of bidirectional, current-sense amplifiers (also
– ±150 µV (maximum) at VCM = 0 V called current-shunt monitors) that sense voltage
drops across current-sense resistors at common-
– ±500 µV (maximum) at VCM = 12 V
mode voltages from –0.2 V to +26 V, independent of
• Output slew rate: 2 V/µs the supply voltage. The INAx181 family integrates a
• Bidirectional current-sensing capability matched resistor gain network in four, fixed-gain
• Accuracy: device options: 20 V/V, 50 V/V, 100 V/V, or 200 V/V.
This matched gain resistor network minimizes gain
– ±1% gain error (maximum) error and reduces the temperature drift.
– 1-µV/°C offset drift (maximum)
These devices operate from a single 2.7-V to 5.5-V
• Gain options: power supply. The single-channel INA181 draws a
– 20 V/V (A1 devices) maximum supply current of 260 µA; whereas, the
– 50 V/V (A2 devices) dual-channel INA2181 draws a maximum supply
current of 500 µA, and the quad-channel INA4181
– 100 V/V (A3 devices) draws a maximum supply current of 900 µA.
– 200 V/V (A4 devices)
The INA181 is available in a 6-pin, SOT-23 package.
• Quiescent current: 260 µA maximum (INA181) The INA2181 is available in 10-pin, VSSOP and
WSON packages. The INA4181 is available in a 20-
2 Applications pin, TSSOP package. All device options are specified
• Motor control over the extended operating temperature range of
–40°C to +125°C.
• Battery monitoring
• Power management Device Information(1)
• Lighting control PART NUMBER PACKAGE BODY SIZE (NOM)
• Overcurrent detection INA181 SOT-23 (6) 2.90 mm × 1.60 mm
• Solar inverters VSSOP (10) 3.00 mm × 3.00 mm
INA2181
WSON (10) 2.00 mm × 2.00 mm
INA4181 TSSOP (20) 6.50 mm × 4.40 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Typical Application Circuit

Bus Voltage, VCM Power Supply, VS
Up To 26 V 2.7 V to 5.5 V CBYPASS
RSENSE 0.1 µF
Load
INA4181 (quad-channel)
INA2181 (dual-channel)
INA181 (single-channel) VS
Microcontroller
IN±
± OUT
ADC
+
IN+ REF
GND
Copyright © 2017, Texas Instruments Incorporated
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA181, INA2181, INA4181
SBOS793G – APRIL 2017 – REVISED MAY 2020 www.ti.com
Table of Contents
1 Features .................................................................. 1 9 Application and Implementation ........................ 23
2 Applications ........................................................... 1 9.1 Application Information............................................ 23
3 Description ............................................................. 1 9.2 Typical Application .................................................. 30
4 Revision History..................................................... 2 10 Power Supply Recommendations ..................... 32
5 Device Comparison Table..................................... 4 10.1 Common-Mode Transients Greater Than 26 V .... 32
6 Pin Configuration and Functions ......................... 4 11 Layout................................................................... 33
11.1 Layout Guidelines ................................................. 33
7 Specifications......................................................... 7
11.2 Layout Example .................................................... 33
7.1 Absolute Maximum Ratings ..................................... 7
7.2 ESD Ratings.............................................................. 7 12 Device and Documentation Support ................. 37
7.3 Recommended Operating Conditions....................... 7 12.1 Device Support...................................................... 37
7.4 Thermal Information .................................................. 7 12.2 Documentation Support ........................................ 37
7.5 Electrical Characteristics........................................... 8 12.3 Related Links ........................................................ 37
7.6 Typical Characteristics .............................................. 9 12.4 Receiving Notification of Documentation Updates 37
12.5 Support Resources ............................................... 37
8 Detailed Description ............................................ 16
12.6 Trademarks ........................................................... 37
8.1 Overview ................................................................. 16
12.7 Electrostatic Discharge Caution ............................ 37
8.2 Functional Block Diagrams ..................................... 16
12.8 Glossary ................................................................ 37
8.3 Feature Description................................................. 18
8.4 Device Functional Modes........................................ 20 13 Mechanical, Packaging, and Orderable
Information ........................................................... 38
4 Revision History
Changes from Revision F (March 2019) to Revision G Page
• Added INA2181 10-pin WSON package to the data sheet .................................................................................................... 1
Changes from Revision E (July 2018) to Revision F Page
• Added new paragraph regarding phase reversal to end of Input Differential Overload section........................................... 21
• Changed Figure 57 to fix pin number typos ......................................................................................................................... 33
• Changed Figure 58 to fix pin number typos ........................................................................................................................ 34
Changes from Revision D (March 2018) to Revision E Page
• Changed instances of INAx180 to INAx181 (typos) ............................................................................................................... 1
Changes from Revision C (December 2017) to Revision D Page
• Changed INA4181 device from preview to production data (active) ..................................................................................... 1

• Added new Figure 25 for INA4181 ....................................................................................................................................... 12
• Added "other" to first sentence after Figure 49 to clarify channel connection in Summing Multiple Currents section......... 27
Changes from Revision B (November 2017) to Revision C Page
• Changed INA2181 device from preview to production data (active) ...................................................................................... 1

• Added "Both Inputs" to Figure 21 title .................................................................................................................................. 11
• Added new Figure 25 placeholder for INA4181 ................................................................................................................... 12
2 Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: INA181 INA2181 INA4181

INA181, INA2181, INA4181
www.ti.com SBOS793G – APRIL 2017 – REVISED MAY 2020
• Added new Figure 28 placeholder for INA4181 ................................................................................................................... 12

• Changed Figure 29 and added "(A3 Devices)" to end of title............................................................................................... 12
• Changed "less than 150 μV" to "within ±150 μV" regarding offset voltage in Precise Low-Side Current Sensing section.. 19
• Added text regarding RC filter and reference to application report to note at the bottom of Figure 45 .............................. 23
• Deleted VS from Equation 3 ................................................................................................................................................. 24
• Added equation and curve for f-3dB to Figure 48 ................................................................................................................... 25
• Added new content to Summing Multiple Currents section and moved to Application Information section ........................ 27
• Added new content to Detecting Leakage Currents section and moved to Application Information section ....................... 28
• Added new bullet to Layout Guidelines section .................................................................................................................. 33
Changes from Revision A (August 2017) to Revision B Page
• Added INA4181 preview device and associated content to data sheet ................................................................................. 1
• Changed design parameter name in Table 3 from "Accuracy" to "Current sensing error" for clarity .................................. 30
• Changed "RMS" to "RSS" in reference to equation 7 ......................................................................................................... 31
Changes from Original (April 2017) to Revision A Page
• Added INA2181 preview device and associated content to data sheet ................................................................................. 1
Copyright © 2017–2020, Texas Instruments Incorporated Submit Documentation Feedback 3

INA181, INA2181, INA4181
5 Device Comparison Table
PRODUCT NUMBER OF CHANNELS GAIN (V/V)

INA181A1 1 20
INA181A2 1 50
INA181A3 1 100
INA181A4 1 200
INA2181A1 2 20
INA2181A2 2 50
INA2181A3 2 100
INA2181A4 2 200
INA4181A1 4 20
INA4181A2 4 50
INA4181A3 4 100
INA4181A4 4 200
6 Pin Configuration and Functions
INA181: DBV Package

6-Pin SOT-23
Top View
OUT 1 6 VS
GND 2 5 REF
IN+ 3 4 IN±
Not to scale
Pin Functions: INA181 (Single Channel)

PIN
TYPE DESCRIPTION
NAME NO.
GND 2 Analog Ground
Current-sense amplifier negative input. For high-side applications, connect to load
IN– 4 Analog input side of sense resistor. For low-side applications, connect to ground side of sense
resistor.
Current-sense amplifier positive input. For high-side applications, connect to bus-
IN+ 3 Analog input voltage side of sense resistor. For low-side applications, connect to load side of
sense resistor.
OUT 1 Analog output Output voltage
REF 5 Analog input Reference input
VS 6 Analog Power supply, 2.7 V to 5.5 V

INA181, INA2181, INA4181
INA2181-Q1: DGS Package INA2181: DSQ Package

10-Pin VSSOP 10-Pin WSON
Top View Top View
OUT1 1 10 VS
OUT1 1 10 VS
IN±1 2 9 OUT2
IN±1 2 9 OUT2
IN+1 3 8 IN±2
IN+1 3 Thermal 8 IN±2
Pad
GND 4 7 IN+2
GND 4 7 IN+2
REF1 5 6 REF2
REF1 5 6 REF2
Not to scale
Not to scale
(1) Thermal Pad can be left floating or

connected to GND.
INA4181: PW Package
20-Pin TSSOP
Top View
REF1 1 20 REF4
OUT1 2 19 OUT4
IN±1 3 18 IN±4
IN+1 4 17 IN+4
VS 5 16 GND
IN+2 6 15 IN+3
IN±2 7 14 IN±3
OUT2 8 13 OUT3
REF2 9 12 REF3
NC 10 11 NC
Not to scale
Pin Functions: INA2181 (Dual Channel) and INA4181 (Quad Channel)

PIN
TYPE DESCRIPTION
NAME INA2181 INA4181
GND 4 16 Analog Ground
Current-sense amplifier negative input for channel 1. For high-side
IN–1 2 3 Analog input applications, connect to load side of channel-1 sense resistor. For low-
side applications, connect to ground side of channel-1 sense resistor.
Current-sense amplifier positive input for channel 1. For high-side
IN+1 3 4 Analog input applications, connect to bus-voltage side of channel-1 sense resistor. For
low-side applications, connect to load side of channel-1 sense resistor.
IN–2 8 7 Analog input applications, connect to load side of channel-2 sense resistor. For low-

INA181, INA2181, INA4181
Pin Functions: INA2181 (Dual Channel) and INA4181 (Quad Channel) (continued)
PIN
TYPE DESCRIPTION
NAME INA2181 INA4181
IN+2 7 6 Analog input applications, connect to bus-voltage side of channel-2 sense resistor. For
IN–3 — 14 Analog input applications, connect to load side of channel-3 sense resistor. For low-
IN+3 — 15 Analog input applications, connect to bus-voltage side of channel-3 sense resistor. For
IN–4 — 18 Analog input applications, connect to load side of channel-4 sense resistor. For low-
IN+4 — 17 Analog input applications, connect to bus-voltage side of channel-4 sense resistor. For
NC denotes no internal connection. These pins can be left floating or
NC — 10, 11 —
connected to any voltage between VS and ground.
OUT1 1 2 Analog output Channel 1 output voltage
OUT2 9 8 Analog output Channel 2 output voltage
OUT3 — 13 Analog output Channel 3 output voltage
OUT4 — 19 Analog output Channel 4 output voltage
REF1 5 1 Analog input Channel 1 reference voltage, 0 to VS
REF2 6 9 Analog input Channel 2 reference voltage, 0 to VS
REF3 — 12 Analog input Channel 3 reference voltage, 0 to VS
REF4 — 20 Analog input Channel 4 reference voltage, 0 to VS
VS 10 5 Analog Power supply pin, 2.7 V to 5.5 V

INA181, INA2181, INA4181
7 Specifications
7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage, VS 6 V
(2)
Differential (VIN+) – (VIN–) –26 26
Analog inputs, IN+, IN– (3)
V
Common-mode GND – 0.3 26
Input voltage range at REF pin GND – 0.3 VS + 0.3 V
Output Voltage GND – 0.3 VS + 0.3 V
Maximum output current, IOUT 8 mA
Operating fee-air temperature, TA –55 150 °C
Junction temperature, TJ 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
(3) Input voltage at any pin can exceed the voltage shown if the current at that pin is limited to 5 mA.
7.2 ESD Ratings

VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±3000
V(ESD) Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCM Common-mode input voltage (IN+ and IN–) –0.2 12 26 V
VS Operating supply voltage 2.7 5 5.5 V
TA Operating free-air temperature –40 125 °C
7.4 Thermal Information

INA181 INA2181 INA4181
(1)
THERMAL METRIC DBV (SOT-23) DSQ (WSON) DGS (VSSOP) PW (TSSOP) UNIT
6 PINS 10 PINS 10 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 198.7 74.5 177.3 97.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 120.9 89.7 68.7 37.7 °C/W
RθJB Junction-to-board thermal resistance 52.3 39.8 98.4 48.3 °C/W
ψJT Junction-to-top characterization parameter 30.3 3.7 12.6 3.6 °C/W
ψJB Junction-to-board characterization parameter 52.0 39.7 96.9 47.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 16.8 N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.

INA181, INA2181, INA4181
7.5 Electrical Characteristics

at TA = 25°C, VS = 5 V, VREF = VS / 2, VIN+ = 12 V, and VSENSE = VIN+ – VIN– (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
(1) VIN+ = 0 V to 26 V, VSENSE = 0 mV,
CMRR Common-mode rejection ratio, RTI 84 100 dB
TA = –40°C to +125°C
VSENSE = 0 mV, VIN+ = 0 V ±25 ±150 μV
VOS Offset voltage, RTI
VSENSE = 0 mV ±100 ±500 μV
dVOS/dT Offset drift, RTI VSENSE = 0 mV, TA = –40°C to +125°C 0.2 1 μV/°C
VS = 2.7 V to 5.5 V, VIN+ = 12 V,
PSRR RTI vs power supply ratio ±8 ±40 μV/V
VSENSE = 0 mV
VSENSE = 0 mV, VIN+ = 0 V -6 μA
IIB Input bias current
VSENSE = 0 mV 75 μA
IIO Input offset current VSENSE = 0 mV ±0.05 μA
OUTPUT
A1 devices 20 V/V
A2 devices 50 V/V
G Gain
A3 devices 100 V/V
A4 devices 200 V/V
VOUT = 0.5 V to VS – 0.5 V,
EG Gain error ±0.1% ±1%
TA = –40°C to +125°C
Gain error vs temperature TA = –40°C to +125°C 1.5 20 ppm/°C
Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.01%
Maximum capacitive load No sustained oscillation 1 nF
(2)
VOLTAGE OUTPUT
(3) RL = 10 kΩ to GND, TA = –40°C to
VSP Swing to VS power-supply rail (VS) – 0.02 (VS) – 0.03 V
+125°C
(3) RL = 10 kΩ to GND, TA = –40°C to (VGND) + (VGND) +
VSN Swing to GND V
+125°C 0.0005 0.005
FREQUENCY RESPONSE
A1 devices, CLOAD = 10 pF 350 kHz
BW Bandwidth
SR Slew rate 2 V/μs
(1)
NOISE, RTI
Voltage noise density 40 nV/√Hz
POWER SUPPLY
VSENSE = 0 mV 195 260
INA181 μA
VSENSE = 0 mV, TA = –40°C to +125°C 300
VSENSE = 0 mV 356 500
IQ Quiescent current INA2181 μA
VSENSE = 0 mV, TA = –40°C to +125°C 520
VSENSE = 0 mV 690 900
INA4181 μA
VSENSE = 0 mV, TA = –40°C to +125°C 1000
(1) RTI = referred-to-input.

(2) See Figure 19.
(3) Swing specifications are tested with an overdriven input condition.

INA181, INA2181, INA4181
7.6 Typical Characteristics

at TA = 25°C, VS = 5 V, VREF = VS / 2, and VIN+ = 12 V (unless otherwise noted)
Population
Population
-170
-155
-140
-125
-110
-95
-80
-65
-50
-35
-20
100
115
130
145
-5
10
25
40
55
70
85
40
80
0
-440
-400
-360
-320
-280
-240
-200
-160
-120
-80
-40
120
160
200
240
280
320
360
400 D001 D002
Input Offset Voltage (PV) Input Offset Voltage (PV)
Figure 1. Input Offset Voltage Production Distribution A1 Figure 2. Input Offset Voltage Production Distribution A2
Population
Population
-195
-180
-165
-150
-135
-120
-105
-130
-120
-110
-100
-90
-75
-60
-45
-30
-15
105
120
-90
-80
-70
-60
-50
-40
-30
-20
-10
15
30
45
60
75
90
10
20
30
40
50
60
70
80
0
D003 D004
Input Offset Voltage (PV) Input Offset Voltage (PV)
Figure 3. Input Offset Voltage Production Distribution A3 Figure 4. Input Offset Voltage Production Distribution A4
100
A1
A2
A3
50 A4
Offset Voltage ( PV)
Population
-50
-100
-50 -25 0 25 50 75 100 125 150
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
10
15
20
25
30
35
40
45
50
0
5
Temperature (qC) D005

D006
Common-Mode Rejection Ratio (PV/V)
Figure 5. Offset Voltage vs Temperature

Figure 6. Common-Mode Rejection Production Distribution
A1

INA181, INA2181, INA4181
Typical Characteristics (continued)

Population
Population
-20
-18
-16
-14
-12
-10
-11
-10
-8
-6
-4
-2
10
12
14
16
18
20
22
-9
-8
-7
-6
-5
-4
-3
-2
-1
10
0
2
4
6
8
0
1
2
3
4
5
6
7
8
9
D007 D008
Common-Mode Rejection Ratio (PV/V) Common-Mode Rejection Ratio (PV/V)
Figure 7. Common-Mode Rejection Production Distribution Figure 8. Common-Mode Rejection Production Distribution
A2 A3
10
A1
8 A2
6 A3
A4
4
2
Population
0
-2
-4
-6
-8
-10
-50 -25 0 25 50 75 100 125 150
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
10
11
0
1
2
3
4
5
6
7
8
9

D009
Figure 10. Common-Mode Rejection Ratio vs Temperature

Figure 9. Common-Mode Rejection Production Distribution
A4
Population
Population
-0.145
-0.115
-0.085
-0.055
-0.025
-0.16
-0.13
-0.1
-0.07
-0.04
-0.01
0.005
0.02
0.035
0.05
0.065
0.08
0.095
0.11
0.125
0.14
0.155
-0.14
-0.13
-0.12
-0.11
-0.1
-0.09
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0
D011 D012
Gain Error (%) Gain Error (%)
Figure 11. Gain Error Production Distribution A1 Figure 12. Gain Error Production Distribution A2

INA181, INA2181, INA4181

Population
Population
-0.155
-0.125
-0.095
-0.065
-0.035
-0.005
-0.265
-0.215
-0.165
-0.115
-0.065
-0.015
-0.17
-0.14
-0.11
-0.08
-0.05
-0.02
0.01
0.025
0.04
0.055
0.07
0.085
0.115
0.13
0.145
-0.29
-0.24
-0.19
-0.14
-0.09
-0.04
0.01
0.035
0.06
0.085
0.11
0.135
0.16
0.185
0.21
0.235
0.1
D013 D014
Gain Error (%) Gain Error (%)
Figure 13. Gain Error Production Distribution A3 Figure 14. Gain Error Production Distribution A4
0.4 50
A1 A1
0.3 A2 A2
A3 40 A3
0.2 A4 A4
30
Gain Error (%)
0.1
Gain (dB)
0 20
-0.1
10
-0.2
0
-0.3
-0.4 -10
-50 -25 0 25 50 75 100 125 150 10 100 1k 10k 100k 1M 10M
Frequency (Hz) D016
Figure 15. Gain Error vs Temperature Figure 16. Gain vs Frequency

120 140
A1
Common-Mode Rejection Ratio (dB)
A2
Power-Supply Rejection Ratio (dB)
100 120
A3
A4
100
80
80
60
60
40
40
20 20
0 0
10 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M 10M
Frequency (Hz) D017
Frequency (Hz) D018
Figure 17. Power-Supply Rejection Ratio vs Frequency Figure 18. Common-Mode Rejection Ratio vs Frequency

INA181, INA2181, INA4181

VS 120
–40°C
25°C 100
VS – 1 125°C
Input Bias Current (PA)

80
Output Swing (V)
VS – 2
60
40
GND + 2
20
GND + 1
0
GND -20
0 5 10 15 20 25 30 35 40 45 50 55 60 -5 0 5 10 15 20 25 30
Output Current (mA) D019
Common-Mode Voltage (V) D020
Supply voltage = 5 V
Figure 19. Output Voltage Swing vs Output Current Figure 20. Input Bias Current vs Common-Mode Voltage
120 80
79
100
78
80 77
76
60
75
40
74
20 73
72
0
71
-20 70
-5 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150
Supply voltage = 0 V
Figure 21. Input Bias Current vs Common-Mode Voltage Figure 22. Input Bias Current vs Temperature
(Both Inputs, Shutdown)
210 380
375
205
370
Quiescent Current (PA)
200
365
195 360
355
190
350
185
345
180 340
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Figure 23. Quiescent Current vs Temperature (INA181) Figure 24. Quiescent Current vs Temperature (INA2181)

INA181, INA2181, INA4181

710 400
705
700
350
695

690
685 300
680
675 250
670
665
200
660
655
650 150
-50 -25 0 25 50 75 100 125 150 -5 0 5 10 15 20 25 30
Figure 25. Quiescent Current vs Temperature (INA4181) Figure 26. IQ vs Common-Mode Voltage (INA181)
750 1450
700 1350
650 1250
600 1150
550 1050
500 950
450 850
400 750
350 650
300 550
-5 0 5 10 15 20 25 30 -5 0 5 10 15 20 25 30
Figure 27. IQ vs Common-Mode Voltage (INA2181) Figure 28. IQ vs Common-Mode Voltage (INA4181)
100
Input-Referred Voltage Noise (nV/—Hz)
80
70
Voltage Noise (200 nV/div)
60
50
Referred-to-Input
40
30
20
10
10 100 1k 10k 100k 1M Time (1 s/div)
Frequency (Hz) D024 D025
Figure 29. Input-Referred Voltage Noise vs Frequency Figure 30. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input)
(A3 Devices)

INA181, INA2181, INA4181

VCM
Output Voltage
VOUT
Common-Mode Voltage (5 V/div)

2 V/div
VOUT (100 mV/div)

Input Voltage
40 mV/div
Time (10 Ps/div) Time (25 Ps/div)

D026 D027
80-mVPP input step
Figure 31. Step Response Figure 32. Common-Mode Voltage Transient Response
Inverting Input Noninverting Input

Output Output
Voltage (2 V/div)
Voltage (2 V/div)
0V 0V

D028 D029
Figure 33. Inverting Differential Input Overload Figure 34. Noninverting Differential Input Overload
Supply Voltage Supply Voltage

Output Voltage Output Voltage
Voltage (1 V/div)
Voltage (1 V/div)
0V
0V
D030 D032
Figure 35. Start-Up Response Figure 36. Brownout Recovery

INA181, INA2181, INA4181

1000 140
500 A1 Ch1 onto Ch2
A2 130 Ch2 onto Ch1
200 A3
Channel Separation (dB)

100 A4
Output Impedance (:)
120
50
20 110
10
5 100
2
90
1
0.5 80
0.2
0.1 70
10 100 1k 10k 100k 1M 10M 100 1k 10k 100k 1M
Frequency (Hz) Frequency (Hz) D034
D033
Figure 37. Output Impedance vs Frequency Figure 38. Channel Separation vs Frequency (INA2181)

INA181, INA2181, INA4181
8 Detailed Description
8.1 Overview
The INA181, INA2181, and INA4181 (INAx181) are 26-V common-mode, current-sensing amplifiers used in both
low-side and high-side configurations. These specially-designed, current-sensing amplifiers accurately measure
voltages developed across current-sensing resistors on common-mode voltages that far exceed the supply
voltage powering the device. Current can be measured on input voltage rails as high as 26 V, and the devices
can be powered from supply voltages as low as 2.7 V.
8.2 Functional Block Diagrams
VS
Single-Channel
TI Device
IN±
±
OUT
+
IN+ REF
GND
Figure 39. INA181 Functional Block Diagram
VS
Dual-Channel
TI Device
IN±1
±
OUT1
+
IN+1 REF1
IN±2
±
OUT2
+
IN+2 REF2
GND

INA181, INA2181, INA4181
Functional Block Diagrams (continued)
VS
Quad-Channel
TI Device
IN±1
±
OUT1
+
IN+1 REF1
IN±2
±
OUT2
+
IN+2 REF2
IN±3
±
OUT3
+
IN+3 REF3
IN±4
±
OUT4
+
IN+4 REF4
GND

INA181, INA2181, INA4181
8.3 Feature Description

8.3.1 High Bandwidth and Slew Rate
The INAx181 support small-signal bandwidths as high as 350 kHz, and large-signal slew rates of 2 V/µs. The
ability to detect rapid changes in the sensed current, as well as the ability to quickly slew the output, make the
INAx181 a good choice for applications that require a quick response to input current changes. One application
that requires high bandwidth and slew rate is low-side motor control, where the ability to follow rapid changing
current in the motor allows for more accurate control over a wider operating range. Another application that
requires higher bandwidth and slew rates is system fault detection, where the INAx181 are used with an external
comparator and a reference to quickly detect when the sensed current is out of range.
8.3.2 Bidirectional Current Monitoring

The INA181 senses current flow through a sense resistor in both directions. The bidirectional current-sensing
capability is achieved by applying a voltage at the REF pin to offset the output voltage. A positive differential
voltage sensed at the inputs results in an output voltage that is greater than the applied reference voltage;
likewise, a negative differential voltage at the inputs results in output voltage that is less than the applied
reference voltage. The output voltage of the current-sense amplifier is shown in Equation 1.
VOUT I LOAD u RSENSE u GAIN VREF
where
• ILOAD is the load current to be monitored.
• RSENSE is the current-sense resistor.
• GAIN is the gain option of the selected device.
• VREF is the voltage applied to the REF pin. (1)
8.3.3 Wide Input Common-Mode Voltage Range

The INAx181 support input common-mode voltages from –0.2 V to +26 V. Because of the internal topology, the
common-mode range is not restricted by the power-supply voltage (VS) as long as VS stays within the operational
range of 2.7 V to 5.5 V. The ability to operate with common-mode voltages greater or less than VS allow the
INAx181 to be used in high-side, as well as low-side, current-sensing applications, as shown in Figure 42.
Bus Supply
±0.2 V to +26 V
Direction of Positive
IN+
Current Flow
High-Side Sensing
RSENSE Common-mode voltage (VCM)
is bus-voltage dependent.
IN±
LOAD
Direction of Positive IN+

Current Flow
Low-Side Sensing
Common-mode voltage (VCM)
RSENSE is always near ground and is
isolated from bus-voltage spikes.
IN±
Figure 42. High-Side and Low-Side Sensing Connections

INA181, INA2181, INA4181
Feature Description (continued)

8.3.4 Precise Low-Side Current Sensing
When used in low-side current sensing applications the offset voltage of the INAx181 is within ±150 µV. The low
offset performance of the INAx181 has several benefits. First, the low offset allows these devices to be used in
applications that must measure current over a wide dynamic range. In this case, the low offset improves the
accuracy when the sensed currents are on the low end of the measurement range. Another advantage of low
offset is the ability to sense lower voltage drop across the sense resistor accurately, thus allowing a lower-value
shunt resistor. Lower-value shunt resistors reduce power loss in the current sense circuit, and help improve the
power efficiency of the end application.
The gain error of the INAx181 is specified to be within 1% of the actual value. As the sensed voltage becomes
much larger than the offset voltage, this voltage becomes the dominant source of error in the current sense
measurement.
8.3.5 Rail-to-Rail Output Swing

The INAx181 allow linear current sensing operation with the output close to the supply rail and GND. The
maximum specified output swing to the positive rail is 30 mV, and the maximum specified output swing to GND is
only 5 mV. In order to compare the output swing of the INAx181 to an equivalent operational amplifier (op amp),
the inputs are overdriven to approximate the open-loop condition specified in op amp data sheets. The current-
sense amplifier is a closed-loop system; therefore, the output swing to GND can be limited by the product of the
offset voltage and amplifier gain during unidirectional operation (VREF = 0 V).
For devices that have positive offset voltages, the swing to GND is limited by the larger of either the offset
voltage multiplied by the gain or the swing to GND specified in the Electrical Characteristics table.
For example, in an application where the INA181A4 (gain = 200 V/V) is used for low-side current sensing and the
device has an offset of 40 µV, the product of the device offset and gain results in a value of 8 mV, greater than
the specified negative swing value. Therefore, the swing to GND for this example is 8 mV. If the same device
has an offset of –40 µV, then the calculated zero differential signal is –8 mV. In this case, the offset helps
overdrive the swing in the negative direction, and swing performance is consistent with the value specified in the
Electrical Characteristics table.
The offset voltage is a function of the common-mode voltage as determined by the CMRR specification;
therefore, the offset voltage increases when higher common-mode voltages are present. The increase in offset
voltage limits how low the output voltage can go during a zero-current condition when operating at higher
common-mode voltages with VREF = 0 V . The typical limitation of the zero-current output voltage vs common-
mode voltage for each gain option is shown in Figure 43.
0.06
A1
0.054 A2
Zero Current Output Voltage (V)
0.048 A3
A4
0.042
0.036
0.03
0.024
0.018
0.012
0.006
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Common Mode Voltage (V) D033
Figure 43. Zero-Current Output Voltage vs Common-Mode Voltage

INA181, INA2181, INA4181
8.4 Device Functional Modes

8.4.1 Normal Mode
The INAx181 are in normal operation when the following conditions are met:
• The power supply voltage (VS) is between 2.7 V and 5.5 V.
• The common-mode voltage (VCM) is within the specified range of –0.2 V to +26 V.
• The maximum differential input signal times gain plus VREF is less than VS minus the output voltage swing to
VS.
• The minimum differential input signal times gain plus VREF is greater than the swing to GND (see the Rail-to-
Rail Output Swing section).
During normal operation, these devices produce an output voltage that is the gained-up representation of the
difference voltage from IN+ to IN– plus the reference voltage at VREF.
8.4.2 Unidirectional Mode

These devices can be configured to monitor current flowing in one direction (unidirectional) or in both directions
(bidirectional) depending on how the REF pin is configured. The most common case is unidirectional where the
output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 44.
When the current flows from the bus supply to the load, the input signal across IN+ to IN– increases, and causes
the output voltage at the OUT pin to increase.
Bus Voltage
±0.2 V to +26 V Power Supply, VS
2.7 V to 5.5 V CBYPASS
RSENSE
0.1 µF
Load
Single-Channel VS
TI Device
IN±
OUT
±
Output
+
IN+ REF
GND
Figure 44. Unidirectional Application
The linear range of the output stage is limited by how close the output voltage can approach ground under zero
input conditions. In unidirectional applications where measuring very low input currents is desirable, bias the REF
pin to a convenient value above 50 mV to get the output into the linear range of the device. To limit common-
mode rejection errors, buffer the reference voltage connected to the REF pin.
A less-frequently used output biasing method is to connect the REF pin to the power-supply voltage, VS. This
method results in the output voltage saturating at 200 mV less than the supply voltage when no differential input
signal is present. This method is similar to the output saturated low condition with no input signal when the REF
pin is connected to ground. The output voltage in this configuration only responds to negative currents that
develop negative differential input voltage relative to the device IN– pin. Under these conditions, when the
differential input signal increases negatively, the output voltage moves downward from the saturated supply
voltage. The voltage applied to the REF pin must not exceed VS.

INA181, INA2181, INA4181
Device Functional Modes (continued)

8.4.3 Bidirectional Mode
The INAx181 are bidirectional, current-sense amplifiers capable of measuring currents through a resistive shunt
in two directions. This bidirectional monitoring is common in applications that include charging and discharging
operations where the current flowing through the resistor can change directions.
Bus Voltage
RSENSE
0.1 µF
Load
Single-Channel VS
TI Device
IN± Reference
Voltage
± OUT
Output
+
IN+ REF
+
GND ±
Figure 45. Bidirectional Application
The ability to measure this current flowing in both directions is enabled by applying a voltage to the REF pin, as
shown in Figure 45. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input
level state. The output then responds by increasing above VREF for positive differential signals (relative to the IN–
pin) and responds by decreasing below VREF for negative differential signals. This reference voltage applied to
the REF pin can be set anywhere between 0 V to VS. For bidirectional applications, VREF is typically set at mid-
scale for equal signal range in both current directions. In some cases, however, VREF is set at a voltage other
than mid-scale when the bidirectional current and corresponding output signal do not need to be symmetrical.
8.4.4 Input Differential Overload

If the differential input voltage (VIN+ – VIN–) times gain exceeds the voltage swing specification, the INAx181 drive
the output as close as possible to the positive supply or ground, and does not provide accurate measurement of
the differential input voltage. If this input overload occurs during normal circuit operation, then reduce the value of
the shunt resistor or use a lower-gain version with the chosen sense resistor to avoid this mode of operation. If a
differential overload occurs in a fault event, then the output of the INAx181 returns to the expected value
approximately 20 µs after the fault condition is removed.
When the INAx181 output is driven to either the supply rail or ground, increasing the differential input voltage
does not damage the device as long as the absolute maximum ratings are not violated. Following these
guidelines, the INAx181 output maintains polarity, and does not suffer from phase reversal.

INA181, INA2181, INA4181
Device Functional Modes (continued)

8.4.5 Shutdown Mode
Although the INAx181 do not have a shutdown pin, the low power consumption of these devices allows the
output of a logic gate or transistor switch to power the INAx181. This gate or switch turns on and off the INAx181
power-supply quiescent current.
However, in current shunt monitoring applications, there is also a concern for how much current is drained from
the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INAx181 in shutdown mode, as shown in Figure 46.
VS
2.7 V to 5.5 V
RPULL-UP
10 k
Bus Voltage
±0.2 V to +26 V Shutdown
RSENSE
Load
CBYPASS
0.1 µF
Single-Channel VS
TI Device
IN±
OUT
± Output
+
IN+ REF
GND
Figure 46. Basic Circuit to Shut Down the INA181 With a Grounded Reference
There is typically more than 500 kΩ of impedance (from the combination of 500-kΩ feedback and
input gain set resistors) from each input of the INAx181 to the OUT pin and to the REF pin. The amount of
current flowing through these pins depends on the voltage at the connection. For example, if the REF pin is
grounded, the calculation of the effect of the 500 kΩ impedance from the shunt to ground is straightforward.
However, if the reference is powered while the INAx181 is in shutdown mode, instead of assuming 500 kΩ to
ground, assume 500 kΩ to the reference voltage.
Regarding the 500-kΩ path to the output pin, the output stage of a disabled INAx181 does constitute a good path
to ground. Consequently, this current is directly proportional to a shunt common-mode voltage present across a
500-kΩ resistor.
As a final note, as long as the shunt common-mode voltage is greater than VS when the device is powered up,
there is an additional and well-matched 55-µA typical current that flows in each of the inputs. If less than VS, the
common-mode input currents are negligible, and the only current effects are the result of the 500-kΩ resistors.

INA181, INA2181, INA4181
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information

The INAx181 amplify the voltage developed across a current-sensing resistor as current flows through the
resistor to the load or ground. The ability to drive the reference pin to adjust the functionality of the output signal
offers multiple configurations, as discussed in previous sections.
9.1.1 Basic Connections

Figure 47 shows the basic connections of the INA181. Connect the input pins (IN+ and IN–) as closely as
possible to the shunt resistor to minimize any resistance in series with the shunt resistor.
Bus Voltage Power Supply, VS
±0.2 V to +26 V 2.7 V to 5.5 V CBYPASS
RSENSE 0.1 µF
Load
Single-Channel VS
TI Device
IN± Microcontroller
OUT
±
ADC
+
IN+ REF
GND
NOTE: To help eliminate ground offset errors between the device and the analog-to-digital converter (ADC), connect
the REF pin to the ADC reference input and then to ground. For best performance, use an RC filter between the
output of the INAx181 and the ADC. See Closed-Loop Analysis of Load-Induced Amplifier Stability Issues Using
ZOUT for more details.
Figure 47. Basic Connections for the INA181
A power-supply bypass capacitor of at least 0.1 µF is required for proper operation. Applications with noisy or
high-impedance power supplies may require additional decoupling capacitors to reject power-supply noise.
Connect bypass capacitors close to the device pins.

INA181, INA2181, INA4181
Application Information (continued)

9.1.2 RSENSE and Device Gain Selection
The accuracy of the INAx181 is maximized by choosing the current-sense resistor to be as large as possible. A
large sense resistor maximizes the differential input signal for a given amount of current flow and reduces the
error contribution of the offset voltage. However, there are practical limits as to how large the current-sense
resistor can be in a given application. The INAx181 have typical input bias currents of 75 µA for each input when
operated at a 12-V common-mode voltage input. When large current-sense resistors are used, these bias
currents cause increased offset error and reduced common-mode rejection. Therefore, using current-sense
resistors larger than a few ohms is generally not recommended for applications that require current-monitoring
accuracy. A second common restriction on the value of the current-sense resistor is the maximum allowable
power dissipation that is budgeted for the resistor. Equation 2 gives the maximum value for the current sense
resistor for a given power dissipation budget:
PDMAX
RSENSE
IMAX2
where:
• PDMAX is the maximum allowable power dissipation in RSENSE.
• IMAX is the maximum current that will flow through RSENSE. (2)
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing to rail limitations. In order to make sure that the current-sense signal is properly
passed to the output, both positive and negative output swing limitations must be examined. Equation 3 provides
the maximum values of RSENSE and GAIN to keep the device from hitting the positive swing limitation.
IMAX u RSENSE u GAIN VSP VREF
where:
• IMAX is the maximum current that will flow through RSENSE.
• GAIN is the gain of the current sense-amplifier.
• VSP is the positive output swing as specified in the data sheet.
• VREF is the externally applied voltage on the REF pin. (3)
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off between
the value of the sense resistor and the gain of the device under consideration. If the sense resistor selected for
the maximum power dissipation is too large, then it is possible to select a lower-gain device in order to avoid
positive swing limitations.
The negative swing limitation places a limit on how small of a sense resistor can be used in a given application.
Equation 4 provides the limit on the minimum size of the sense resistor.
IMIN u RSENSE u GAIN > VSN VREF
where:
• IMIN is the minimum current that will flow through RSENSE.
• GAIN is the gain of the current sense amplifier.
• VSN is the negative output swing of the device (see Rail-to-Rail Output Swing).
• VREF is the externally applied voltage on the REF pin. (4)
In addition to adjusting the offset and gain, the voltage applied to the REF pin can be slightly increased to avoid
negative swing limitations.

INA181, INA2181, INA4181

9.1.3 Signal Filtering
Provided that the INAx181 output is connected to a high impedance input, the best location to filter is at the
device output using a simple RC network from OUT to GND. Filtering at the output attenuates high-frequency
disturbances in the common-mode voltage, differential input signal, and INAx181 power-supply voltage. If filtering
at the output is not possible, or filtering of only the differential input signal is required, it is possible to apply a
filter at the input pins of the device. Figure 48 provides an example of how a filter can be used on the input pins
of the device.
Bus Voltage
±0.2 V to +26 V
RSENSE
Load VS
2.7 V to 5.5 V
1 Single-Channel VS
f 3dB TI Device
2S(RF RF )CF RF < 10 RINT
IN±
f±3dB
CF ± OUT VOUT
Bias
+
RF < 10 RINT REF VREF

IN+
Figure 48. Filter at Input Pins
The addition of external series resistance creates an additional error in the measurement; therefore, the value of
these series resistors must be kept to 10 Ω (or less, if possible) to reduce impact to accuracy. The internal bias
network shown in Figure 48 present at the input pins creates a mismatch in input bias currents when a
differential voltage is applied between the input pins. If additional external series filter resistors are added to the
circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed across the shunt resistor.
This error results in a voltage at the device input pins that is different than the voltage developed across the
shunt resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on
device operation. The amount of error these external filter resistors add to the measurement can be calculated
using Equation 6, where the gain error factor is calculated using Equation 5.
The amount of variance in the differential voltage present at the device input relative to the voltage developed at
the shunt resistor is based both on the external series resistance (RF) value as well as internal input resistor RINT,
as shown in Figure 48. The reduction of the shunt voltage reaching the device input pins appears as a gain error
when comparing the output voltage relative to the voltage across the shunt resistor. A factor can be calculated to
determine the amount of gain error that is introduced by the addition of external series resistance. Calculate the
expected deviation from the shunt voltage to what is measured at the device input pins is given using Equation 5:
1250 u RINT
Gain Error Factor
(1250 u RF ) (1250 u RINT ) (RF u RINT )
where:
• RINT is the internal input resistor.
• RF is the external series resistance. (5)

INA181, INA2181, INA4181

With the adjustment factor from Equation 5, including the device internal input resistance, this factor varies with
each gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2.
Table 1. Input Resistance

PRODUCT GAIN RINT (kΩ)
INAx181A1 20 25
INAx181A2 50 10
INAx181A3 100 5
INAx181A4 200 2.5
Table 2. Device Gain Error Factor

PRODUCT SIMPLIFIED GAIN ERROR FACTOR
25000
INAx181A1
(21u RF ) 25000
10000
INAx181A2
(9 u RF ) 10000
1000
INAx181A3
RF 1000
2500
INAx181A4
(3 u RF ) 2500
The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 6:
Gain Error (%) = 100 - (100 ´ Gain Error Factor) (6)
For example, using an INA181A2 and the corresponding gain error equation from Table 2, a series resistance of
10 Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 6,
resulting in an additional gain error of approximately 0.89% solely because of the external 10-Ω series resistors.

INA181, INA2181, INA4181
9.1.4 Summing Multiple Currents

The outputs of the INA2181 are easily summed by connecting the output of one channel to the reference input of
a second channel. The circuit configuration shown in Figure 49 is an easy way to achieve current summing. To
correctly sum multiple output currents the values for the current sense resistor RSENSE must be the same for all
channels.
Power
Supply
Dual-Channel
TI Device
IN+1 REF1
+ OUT1
RSENSE
±
IN±1
LOAD1
IN+2 REF2
+ OUT2
RSENSE ADC
±
VOUT2 = (ILOAD1 + ILOAD2) × RSENSE × GAIN

IN±2
LOAD2 GND
Figure 49. Summing Multiple Currents
Connect the output of one channel of the INA2181 to the reference input of the other channel. Use the reference
input of the first circuit to set the reference of the final summed output operating point. The currents sensed at
each circuit in the chain are summed at the output of the last device in the chain.

INA181, INA2181, INA4181
An example output response of a summing configuration is shown in Figure 50. The reference pin of the first
circuit is connected to ground, and sine waves at different frequencies are applied to the two circuits to produce a
summed output as shown. The sine wave voltage input for the first circuit is offset so that the whole wave is
above GND.
Output
1 V/div
20 mV/div
Inputs
Time (4 ms/div)
VREF = 0 V
Figure 50. Current Summing Application Output Response (A2 Devices)
9.1.5 Detecting Leakage Currents

Occasionally, the need arises to confirm that the current going into a load is identical to the current coming out of
a load; usually, as part of diagnostic testing or fault detection. This situation requires precision current
differencing, which is the same as summing, except that the two amplifiers have the inputs connected opposite of
each other. To correctly detect leakage currents, the values for the current sense resistor RSENSE must be the
same for all channels. Also an external reference voltage must be provided to the REF1 input to allow
bidirectional leakage current detection.
If the current into a load is equal to the current out of the load, then the voltage at OUT2 is the same as the
applied voltage to REF1. To enable accurate differences between the two currents, a reference voltage must be
applied. The reference voltage prevents the output of the device from being driven to ground, and also enables
detection if the current into the load is either greater than or less than the current coming out of the load.
For current differencing, the dual-channel INA2181 must have the inputs connected opposite to each other, as
shown in Figure 51. The reference input of the first channel sets the output quiescent level for all the devices in
the string. Connect the output of the first channel to the reference input of the second channel. The reference
input of the first channel sets the reference at the output. This circuit example is identical to the current summing
example, except that the two shunt inputs are reversed in polarity. Under normal operating conditions, the final
output is very close to the reference value and proportional to any current difference. This current differencing
circuit is useful in detecting when current in to and out of a load do not match.

INA181, INA2181, INA4181
Power
Supply
Dual-Channel
TI Device
IN+1 REF1
VREF1
+ OUT1
RSENSE ±
IN±1
LOAD
IN+2 REF2
+ OUT2
ADC
RSENSE ±
VOUT2 = VREF1 if there is no leakage current

IN±2
Figure 51. Detecting Leakage Currents
An example output response of a difference configuration is shown in Figure 52. The reference pin of the first
channel is connected to a reference voltage of 2.048 V. The inputs to each circuit is a 100-Hz sine wave, 180°
out-of-phase with each other, resulting in a zero output as shown. The sine wave input to the first circuit is offset
so that the input wave is completely above GND.
Output
1 V/div
20 mV/div
Inputs
Time (4 ms/div)
VREF = 2.048 V
Figure 52. Current Differencing Application Output Response (A2 Devices)

INA181, INA2181, INA4181
9.2 Typical Application

One application for the INAx181 is to monitor bidirectional currents. Bidirectional currents are present in systems
that have to monitor currents in both directions; common examples are monitoring the charging and discharging
of batteries and bidirectional current monitoring in motor control. The device configuration for bidirectional current
monitoring is shown in Figure 53. Applying stable REF pin voltage closer to the middle of device supply voltage
allows both positive- and negative-current monitoring, as shown in this configuration. Configure the INAx181 to
monitor unidirectional currents by grounding the REF pin.
Bus Voltage
RSENSE
0.1 µF
Load
Single-Channel VS
TI Device
IN± Reference
Voltage
± OUT
Output
+
IN+ REF
+
GND ±
Figure 53. Measuring Bidirectional Current
9.2.1 Design Requirements

The design requirements for the circuit shown in Figure 53, are listed in Table 3
Table 3. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE
Power-supply voltage, VS 5V
Bus supply rail, VCM 12 V
RSENSE power loss < 450 mW
Maximum sense current, IMAX ±20 A
Current sensing error Less than 3.5% at maximum current, TJ = 25°C
Small-signal bandwidth > 100 kHz
9.2.2 Detailed Design Procedure

The maximum value of the current sense resistor is calculated based on the maximum power loss requirement.
By applying Equation 2, the maximum value of the current-sense resistor is calculated to be 1.125 mΩ. This is
the maximum value for sense resistor RSENSE; therefore, select RSENSE to be 1 mΩ because it is the closest
standard resistor value that meets the power-loss requirement.
The next step is to select the appropriate gain and reduce RSENSE, if needed, to keep the output signal swing
within the VS range. The design requirements call for bidirectional current monitoring; therefore, a voltage
between 0 and VS must be applied to the REF pin. The bidirectional currents monitored are symmetric around 0
(that is, ±20 A); therefore, the ideal voltage to apply to VREF is VS / 2 or 2.5 V. If the positive current is greater
than the negative current, using a lower voltage on VREF has the benefit of maximizing the output swing for the
given range of expected currents. Using Equation 3, and given that IMAX = 20 A , RSENSE = 1 mΩ, and VREF = 2.5

INA181, INA2181, INA4181
V, the maximum current-sense gain calculated to avoid the positive swing-to-rail limitations on the output is
122.5. Likewise, using Equation 4 for the negative-swing limitation results in a maximum gain of 124.75.
Selecting the gain-of-100 device maximizes the output range while staying within the output swing range. If the
maximum calculated gains are slightly less than 100, the value of the current-sense resistor can be reduced to
keep the output from hitting the output-swing limitations.
To calculate the accuracy at peak current, the two factors that must be determined are the gain error and the
offset error. The gain error of the INAx181 is specified to be a maximum of 1%. The error due to the offset is
constant, and is specified to be 500 µV (maximum) for the conditions where VCM = 12 V and VS = 5 V. Using
Equation 7, the percentage error contribution of the offset voltage is calculated to be 2.5%, with total offset error
= 500 µV, RSENSE = 1 mΩ, and ISENSE = 20 A.
Total Offset Error (V)
Total Offset Error (%) = u 100%
ISENSE u RSENSE (7)
One method of calculating the total error is to add the gain error to the percentage contribution of the offset error.
However, in this case, the gain error and the offset error do not have an influence or correlation to each other. A
more statistically accurate method of calculating the total error is to use the RSS sum of the errors, as shown in
Equation 8:
Total Error (%) = Total Gain Error (%)2 + Total Offset Error (%)2 (8)
After applying Equation 8, the total current sense error at maximum current is calculated to be 2.7%, and that is
less than the design example requirement of 3.5%.
The INA181A3 (gain = 100) also has a bandwidth of 150 kHz that meets the small-signal bandwidth requirement
of 100 kHz. If higher bandwidth is required, lower-gain devices can be used at the expense of either reduced
output voltage range or an increased value of RSENSE.
9.2.3 Application Curve

An example output response of a bidirectional configuration is shown in Figure 54. With the REF pin connected
to a reference voltage (2.5 V in this case), the output voltage is biased upwards by this reference level. The
output rises above the reference voltage for positive differential input signals, and falls below the reference
voltage for negative differential input signals.
Output Voltage
(1 V/div)
VOUT
0V VREF
Time (500 µs/div)
C002
Figure 54. Bidirectional Application Output Response

INA181, INA2181, INA4181
10 Power Supply Recommendations

The input circuitry of the INAx181 accurately measures beyond the power-supply voltage, VS. For example, VS
can be 5 V, whereas the bus supply voltage at IN+ and IN– can be as high as 26 V. However, the output voltage
range of the OUT pin is limited by the voltages on the VS pin. The INAx181 also withstand the full differential
input signal range up to 26 V at the IN+ and IN– input pins, regardless of whether or not the device has power
applied at the VS pin.
10.1 Common-Mode Transients Greater Than 26 V

With a small amount of additional circuitry, the INAx181 can be used in circuits subject to transients higher than
26 V, such as automotive applications. Use only Zener diodes or Zener-type transient absorbers (sometimes
referred to as transzorbs)—any other type of transient absorber has an unacceptable time delay. Start by adding
a pair of resistors as a working impedance for the Zener diode; see Figure 55. Keep these resistors as small as
possible; most often, around 10 Ω. Larger values can be used with an effect on gain that is discussed in the
Signal Filtering section. This circuit limits only short-term transients; therefore, many applications are satisfied
with a 10-Ω resistor along with conventional Zener diodes of the lowest acceptable power rating. This
combination uses the least amount of board space. These diodes can be found in packages as small as SOT-
523 or SOD-523.
VS
Bus Supply 2.7 V to 5.5 V CBYPASS
±0.2 V to +26 V 0.1 µF
RSENSE
Load
Single-Channel VS
TI Device
IN±
±
RPROTECT OUT
Output
< 10 +
REF
IN+
GND
Figure 55. Transient Protection Using Dual Zener Diodes
In the event that low-power Zener diodes do not have sufficient transient absorption capability, a higher-power
transzorb must be used. The most package-efficient solution involves using a single transzorb and back-to-back
diodes between the device inputs, as shown in Figure 56. The most space-efficient solutions are dual, series-
connected diodes in a single SOT-523 or SOD-523 package. In either of the examples shown in Figure 55 and
Figure 56, the total board area required by the INAx181 with all protective components is less than that of an
SO-8 package, and only slightly greater than that of an MSOP-8 package.
VS
Bus Supply 2.7 V to 5.5 V CBYPASS
±0.2 V to +26 V 0.1 µF
RSENSE
Load
Single-Channel VS
TI Device
< 10
IN±
±
Transorb OUT
Output
+
< 10
REF
IN+
GND
Figure 56. Transient Protection Using a Single Transzorb and Input Clamps

INA181, INA2181, INA4181
Common-Mode Transients Greater Than 26 V (continued)

For more information, see Current Shunt Monitor With Transient Robustness Reference Design.
11 Layout
11.1 Layout Guidelines

• Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
• Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
• When routing the connections from the current sense resistor to the device, keep the trace lengths as close
as possible in order to minimize any impedance mismatch..
11.2 Layout Example

Direction of Positive
Current Flow
RSHUNT
Bus Voltage:
±0.2 V to +26 V
IN± 4 3 IN+
Connect REF to low
impedance voltage reference REF 5 2 GND
or to GND pin if not used.
Current
VS 6 1 OUT
Sense
VIA to Ground
Plane
CBYPASS
Power-Supply, VS
2.7 V to 5.5 V
Figure 57. Single-Channel Recommended Layout

INA181, INA2181, INA4181
Layout Example (continued)
Bus Voltage:
±0.2 V to +26 V
VIA to connect REF pins to low

impedance voltage reference or
to GND pin if not used.
VIA to
Ground
Plane
REF2 6 5 REF1
RSHUNT2 IN+2 7 4 GND
IN±2 8 3 IN+1
RSHUNT1
OUT2 9 2 IN±1
VS 10 1 OUT1
Current Sense
CBYPASS
Output 2
Current Sense
Output 1
Power Supply, VS:
2.7 V to 5.5 V
Load 2 Load 1
Figure 58. Dual-Channel Recommended Layout (VSSOP)

INA181, INA2181, INA4181
Bus Voltage:
±0.2 V to +26 V
VIA to connect REF pins to low

impedance voltage reference or
to GND pin if not used.
VIA to
Ground
Plane
REF2 6 5 REF1
RSHUNT2 IN+2 7 4 GND
IN±2 8 3 IN+1
RSHUNT1
OUT2 9 2 IN±1
VS 10 1 OUT1
Current Sense
CBYPASS
Output 2
Current Sense
Output 1
Power Supply, VS:
2.7 V to 5.5 V
Load 2 Load 1
Figure 59. Dual-Channel Recommended Layout (WSON)

INA181, INA2181, INA4181
Load 3 Load 2
Current Sense Current Sense

Output 3 Output 2
Connect to GND or
External Reference
NC 11 10 NC
REF3 12 9 REF2
OUT3 13 8 OUT2
RSHUNT3 IN±3 14 7 IN±2 RSHUNT2
IN+3 15 6 IN+2
VIA to CBYPASS
Ground
Plane GND 16 5 VS
IN+4 17 4 IN+1 Bus Voltage 2:

Bus Voltage 3: ±0.2 V to +26 V
±0.2 V to +26 V
IN±4 18 3 IN±1
OUT4 19 2 OUT1
VIA to Power Supply, VS:
REF4 20 1 REF1 Ground 2.7 V to 5.5 V
Plane
Current Sense Current Sense

Output 4 Output 1
Bus Voltage 4: Load1 Bus Voltage 1:

±0.2 V to +26 V ±0.2 V to +26 V
RSHUNT4 RSHUNT1
Load 4 Load 1
Figure 60. Quad-Channel Recommended Layout

INA181, INA2181, INA4181
12 Device and Documentation Support
12.1 Device Support

12.1.1 Development Support
Current Shunt Monitor With Transient Robustness Reference Design
12.2 Documentation Support

12.2.1 Related Documentation
For related documentation see the following:
• Texas Instruments, INA180-181EVM User's Guide
12.3 Related Links

Table 4 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to order now.
Table 4. Related Links

TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER ORDER NOW
DOCUMENTS SOFTWARE COMMUNITY
INA181 Click here Click here Click here Click here Click here
12.4 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.5 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.6 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.7 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

INA181, INA2181, INA4181
13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM
www.ti.com 27-Aug-2021
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
INA181A1IDBVR ACTIVE SOT-23 DBV 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 18JD
INA181A1IDBVT ACTIVE SOT-23 DBV 6 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 18JD
INA181A2IDBVR ACTIVE SOT-23 DBV 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 1AED
INA181A2IDBVT ACTIVE SOT-23 DBV 6 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 1AED
INA181A3IDBVR ACTIVE SOT-23 DBV 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 1AFD
INA181A3IDBVT ACTIVE SOT-23 DBV 6 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 1AFD
INA181A4IDBVR ACTIVE SOT-23 DBV 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 1AGD
INA181A4IDBVT ACTIVE SOT-23 DBV 6 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 1AGD
INA2181A1IDGSR ACTIVE VSSOP DGS 10 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 1CW6
INA2181A1IDGST ACTIVE VSSOP DGS 10 250 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 1CW6
INA2181A1IDSQR ACTIVE WSON DSQ 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 25IY
INA2181A1IDSQT ACTIVE WSON DSQ 10 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 25IY
INA2181A2IDGSR ACTIVE VSSOP DGS 10 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 1DR6
INA2181A2IDGST ACTIVE VSSOP DGS 10 250 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 1DR6
INA2181A2IDSQR ACTIVE WSON DSQ 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 25JY
INA2181A2IDSQT ACTIVE WSON DSQ 10 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 25JY
INA2181A3IDGSR ACTIVE VSSOP DGS 10 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 1DS6
INA2181A3IDGST ACTIVE VSSOP DGS 10 250 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 1DS6
INA2181A3IDSQR ACTIVE WSON DSQ 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 25KY
INA2181A3IDSQT ACTIVE WSON DSQ 10 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 25KY
Addendum-Page 1
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
INA2181A4IDGSR ACTIVE VSSOP DGS 10 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 1DT6
INA2181A4IDGST ACTIVE VSSOP DGS 10 250 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 1DT6
INA2181A4IDSQR ACTIVE WSON DSQ 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 25LY
INA2181A4IDSQT ACTIVE WSON DSQ 10 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 25LY
INA4181A1IPWR ACTIVE TSSOP PW 20 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 4181A1
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 2
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA181, INA2181, INA4181 :
• Automotive : INA181-Q1, INA2181-Q1, INA4181-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Jun-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS TAPE DIMENSIONS

K0 P1
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2 Q1 Q2
Q3 Q4 Q3 Q4 User Direction of Feed
Pocket Quadrants
*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA181A1IDBVR SOT-23 DBV 6 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
INA181A1IDBVT SOT-23 DBV 6 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
INA2181A1IDGSR VSSOP DGS 10 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA2181A1IDGST VSSOP DGS 10 250 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA2181A1IDSQR WSON DSQ 10 3000 180.0 8.4 2.3 2.3 1.15 4.0 8.0 Q2
INA2181A1IDSQT WSON DSQ 10 250 180.0 8.4 2.3 2.3 1.15 4.0 8.0 Q2
Pack Materials-Page 1
Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1

Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA4181A1IPWR TSSOP PW 20 2000 330.0 16.4 6.95 7.0 1.4 8.0 16.0 Q1
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA181A1IDBVR SOT-23 DBV 6 3000 180.0 180.0 18.0
INA181A1IDBVT SOT-23 DBV 6 250 180.0 180.0 18.0
INA2181A1IDGSR VSSOP DGS 10 2500 366.0 364.0 50.0
INA2181A1IDGST VSSOP DGS 10 250 366.0 364.0 50.0
INA2181A1IDSQR WSON DSQ 10 3000 210.0 185.0 35.0
INA2181A1IDSQT WSON DSQ 10 250 210.0 185.0 35.0
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA4181A1IPWR TSSOP PW 20 2000 356.0 356.0 35.0
PACKAGE OUTLINE
DSQ0010A SCALE 5.000
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
2.1
B A
1.9
PIN 1 INDEX AREA
2.1
1.9
0.8 C
0.7
SEATING PLANE
0.05
0.00 0.08 C
0.9 0.1
EXPOSED SYMM
THERMAL PAD (0.2) TYP
5 6
11 SYMM
2X 1.6
1.5 0.1
8X 0.4
1
10
0.25
PIN 1 ID 10X
0.15
0.4
10X 0.1 C A B
0.2
0.05
4218906/A 04/2019
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
DSQ0010A WSON - 0.8 mm max height
(0.9) SEE SOLDER MASK

10X (0.5) DETAIL
SYMM
10X (0.2) 1 10
(1.5)
8X (0.4) 11 SYMM
(0.5)
(R0.05) TYP
5 6
( 0.2) TYP
VIA (1.9)
LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE: 20X
0.07 MIN
0.07 MAX ALL AROUND
ALL AROUND
METAL UNDER
METAL EDGE SOLDER MASK
EXPOSED METAL
SOLDER MASK EXPOSED SOLDER MASK
OPENING METAL OPENING
NON SOLDER MASK

DEFINED SOLDER MASK DEFINED
(PREFERRED)
SOLDER MASK DETAILS

4218906/A 04/2019
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
DSQ0010A WSON - 0.8 mm max height
10X (0.5)
(0.85)
10X (0.2) 1 10
8X (0.4) 11 SYMM
(1.38)
(R0.05) TYP
5 6
SYMM
(1.9)
SOLDER PASTE EXAMPLE

BASED ON 0.125 MM THICK STENCIL
SCALE: 20X
EXPOSED PAD 11
87% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
4218906/A 04/2019
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
PACKAGE OUTLINE
DGS0010A SCALE 3.200
VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
C
5.05
TYP SEATING PLANE
4.75
A PIN 1 ID 0.1 C
AREA
8X 0.5
10
1
3.1
2.9 2X
NOTE 3 2
5
6
0.27
10X
0.17
3.1 0.1 C A B 1.1 MAX
B
2.9
NOTE 4
0.23
TYP
SEE DETAIL A 0.13
0.25
GAGE PLANE
0.7 0.15
0 -8 0.05
0.4
DETAIL A
TYPICAL
4221984/A 05/2015
NOTES:
per ASME Y14.5M.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-187, variation BA.
www.ti.com
DGS0010A VSSOP - 1.1 mm max height
10X (1.45)
10X (0.3) SYMM (R0.05)
1 TYP
10
SYMM
8X (0.5) 5 6
(4.4)

SCALE:10X
SOLDER MASK METAL UNDER SOLDER MASK

METAL OPENING
OPENING SOLDER MASK
0.05 MAX 0.05 MIN

ALL AROUND ALL AROUND
NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
SOLDER MASK DETAILS

NOT TO SCALE
4221984/A 05/2015
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
DGS0010A VSSOP - 1.1 mm max height
10X (1.45)
SYMM (R0.05) TYP
10X (0.3)
1
10
SYMM
8X (0.5)
5 6
(4.4)

BASED ON 0.125 mm THICK STENCIL
SCALE:10X
4221984/A 05/2015
NOTES: (continued)
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
PACKAGE OUTLINE
DBV0006A SCALE 4.000
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
C
3.0
2.6 0.1 C
1.75
B A 1.45 MAX
1.45
PIN 1
INDEX AREA
1
6
2X 0.95
3.05
2.75
1.9 5
2
4
3
0.50
6X
0.25
0.15
0.2 C A B (1.1) TYP
0.00
0.25
GAGE PLANE 0.22
TYP
0.08
8
TYP 0.6
0 TYP SEATING PLANE
0.3
4214840/C 06/2021
NOTES:
per ASME Y14.5M.
3. Body dimensions do not include mold flash or protrusion. Mold flash and protrusion shall not exceed 0.25 per side.
4. Leads 1,2,3 may be wider than leads 4,5,6 for package orientation.
5. Refernce JEDEC MO-178.
www.ti.com
DBV0006A SOT-23 - 1.45 mm max height
PKG
6X (1.1)
1
6X (0.6)
6
SYMM
2 5
2X (0.95)
3 4
(R0.05) TYP (2.6)

EXPOSED METAL SHOWN
SCALE:15X
SOLDER MASK
SOLDER MASK METAL METAL UNDER OPENING
OPENING SOLDER MASK
EXPOSED METAL EXPOSED METAL
0.07 MAX 0.07 MIN

ARROUND ARROUND
NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4214840/C 06/2021
NOTES: (continued)

www.ti.com
DBV0006A SOT-23 - 1.45 mm max height
PKG
6X (1.1)
1
6X (0.6)
6
SYMM
2 5
2X(0.95)
3 4
(R0.05) TYP
(2.6)

SCALE:15X
4214840/C 06/2021
NOTES: (continued)
www.ti.com
PACKAGE OUTLINE
PW0020A SCALE 2.500
TSSOP - 1.2 mm max height
SEATING
6.6 C
TYP PLANE
A 6.2
0.1 C
PIN 1 INDEX AREA
18X 0.65
20
1
2X
6.6 5.85
6.4
NOTE 3
10
11
0.30
20X
4.5 0.19 1.2 MAX
B
4.3
NOTE 4 0.1 C A B
(0.15) TYP
SEE DETAIL A
0.25
GAGE PLANE 0.15
0.05
0.75
0.50
0 -8
DETAIL A
A 20
TYPICAL
4220206/A 02/2017
NOTES:
per ASME Y14.5M.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153.
www.ti.com
PW0020A TSSOP - 1.2 mm max height
20X (1.5) SYMM

(R0.05) TYP
1
20X (0.45) 20
SYMM
18X (0.65)
10 11
(5.8)

EXPOSED METAL SHOWN
SCALE: 10X
SOLDER MASK METAL UNDER SOLDER MASK

METAL SOLDER MASK OPENING
OPENING
EXPOSED METAL EXPOSED METAL
0.05 MAX 0.05 MIN

ALL AROUND ALL AROUND
NON-SOLDER MASK SOLDER MASK

DEFINED DEFINED
(PREFERRED) SOLDER MASK DETAILS
15.000
4220206/A 02/2017
NOTES: (continued)

www.ti.com
PW0020A TSSOP - 1.2 mm max height
20X (1.5) SYMM

(R0.05) TYP
1
20X (0.45) 20
SYMM
18X (0.65)
10 11
(5.8)

SCALE: 10X
4220206/A 02/2017
NOTES: (continued)
www.ti.com
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INA181, INA2181, INA4181

INAx181 Bidirectional, Low- and High-Side Voltage Output,

Typical Application Circuit

Copyright © 2017, Texas Instruments Incorporated

• Added INA2181 10-pin WSON package to the data sheet .................................................................................................... 1

Changes from Revision E (July 2018) to Revision F Page

Changes from Revision D (March 2018) to Revision E Page

• Changed instances of INAx180 to INAx181 (typos) ............................................................................................................... 1

Changes from Revision C (December 2017) to Revision D Page

• Changed INA4181 device from preview to production data (active) ..................................................................................... 1

Changes from Revision B (November 2017) to Revision C Page

• Changed INA2181 device from preview to production data (active) ...................................................................................... 1

2 Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated

Product Folder Links: INA181 INA2181 INA4181

• Added new Figure 28 placeholder for INA4181 ................................................................................................................... 12

Changes from Revision A (August 2017) to Revision B Page

Changes from Original (April 2017) to Revision A Page

Copyright © 2017–2020, Texas Instruments Incorporated Submit Documentation Feedback 3

5 Device Comparison Table

PRODUCT NUMBER OF CHANNELS GAIN (V/V)

6 Pin Configuration and Functions

INA181: DBV Package

Pin Functions: INA181 (Single Channel)

4 Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated

Product Folder Links: INA181 INA2181 INA4181

INA2181-Q1: DGS Package INA2181: DSQ Package

(1) Thermal Pad can be left floating or

Pin Functions: INA2181 (Dual Channel) and INA4181 (Quad Channel)

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6 Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated

Product Folder Links: INA181 INA2181 INA4181

7.1 Absolute Maximum Ratings

7.2 ESD Ratings

7.3 Recommended Operating Conditions

7.4 Thermal Information

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7.5 Electrical Characteristics

(1) RTI = referred-to-input.

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Product Folder Links: INA181 INA2181 INA4181

7.6 Typical Characteristics

Temperature (qC) D005

Figure 5. Offset Voltage vs Temperature

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Typical Characteristics (continued)

Temperature (qC) D010

Figure 10. Common-Mode Rejection Ratio vs Temperature

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Product Folder Links: INA181 INA2181 INA4181

Typical Characteristics (continued)

Figure 15. Gain Error vs Temperature Figure 16. Gain vs Frequency

Copyright © 2017–2020, Texas Instruments Incorporated Submit Documentation Feedback 11

Typical Characteristics (continued)

Input Bias Current (PA)

Input Bias Current (PA)

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Product Folder Links: INA181 INA2181 INA4181